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Nanoscale confinement and control of excitonic complexes in a monolayer WSe2
Authors:
Hyowon Moon,
Lukas Mennel,
Chitraleema Chakraborty,
Cheng Peng,
Jawaher Almutlaq,
Takashi Taniguchi,
Kenji Watanabe,
Dirk Englund
Abstract:
Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited…
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Nanoscale control and observation of photophysical processes in semiconductors is critical for basic understanding and applications from optoelectronics to quantum information processing. In particular, there are open questions and opportunities in controlling excitonic complexes in two-dimensional materials such as excitons, trions or biexcitons. However, neither conventional diffraction-limited optical spectroscopy nor lithography-limited electric control provides a proper tool to investigate these quasiparticles at the nanometer-scale at cryogenic temperature. Here, we introduce a cryogenic capacitive confocal optical microscope (C3OM) as a tool to study quasiparticle dynamics at the nanometer scale. Using a conductive atomic force microscope (AFM) tip as a gate electrode, we can modulate the electronic do** at the nanometer scale in WSe2 at 4K. This tool allows us to modulate with nanometer-scale confinement the exciton and trion peaks, as well a distinct photoluminescence line associated with a larger excitonic complex that exhibits distinctive nonlinear optical response. Our results demonstrate nanoscale confinement and spectroscopy of exciton complexes at arbitrary positions, which should prove an important tool for quantitative understanding of complex optoelectronic properties in semiconductors as well as for applications ranging from quantum spin liquids to superresolution measurements to control of quantum emitters.
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Submitted 30 November, 2023;
originally announced November 2023.
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A photosensor employing data-driven binning for ultrafast image recognition
Authors:
Lukas Mennel,
Aday J. Molina-Mendoza,
Matthias Paur,
Dmitry K. Polyushkin,
Dohyun Kwak,
Miriam Giparakis,
Maximilian Beiser,
Aaron Maxwell Andrews,
Thomas Mueller
Abstract:
Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, in which adjacent detector elements of an image sensor are combined into larger pixels. This reduces the amount of data to be processed as well as the impact of noise, but comes at the cost of a loss of information. Here, we push the concept of binning to its limit by combining a large fraction of the sensor e…
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Pixel binning is a technique, widely used in optical image acquisition and spectroscopy, in which adjacent detector elements of an image sensor are combined into larger pixels. This reduces the amount of data to be processed as well as the impact of noise, but comes at the cost of a loss of information. Here, we push the concept of binning to its limit by combining a large fraction of the sensor elements into a single superpixel that extends over the whole face of the chip. For a given pattern recognition task, its optimal shape is determined from training data using a machine learning algorithm. We demonstrate the classification of optically projected images from the MNIST dataset on a nanosecond timescale, with enhanced sensitivity and without loss of classification accuracy. Our concept is not limited to imaging alone but can also be applied in optical spectroscopy or other sensing applications.
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Submitted 20 November, 2021;
originally announced November 2021.
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Sparse pixel image sensor
Authors:
Lukas Mennel,
Dmitry K. Polyushkin,
Dohyun Kwak,
Thomas Mueller
Abstract:
As conventional frame-based cameras suffer from high energy consumption and latency, several new types of image sensors have been devised, with some of them exploiting the sparsity of natural images in some transform domains. Instead of sampling the full image, those devices capture only the coefficients of the most relevant spatial frequencies. The number of samples can be even sparser if a signa…
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As conventional frame-based cameras suffer from high energy consumption and latency, several new types of image sensors have been devised, with some of them exploiting the sparsity of natural images in some transform domains. Instead of sampling the full image, those devices capture only the coefficients of the most relevant spatial frequencies. The number of samples can be even sparser if a signal only needs to be classified rather than being fully reconstructed. Based on this mathematical framework, we developed an image sensor that can be trained to classify optically projected images by reading out the few most relevant pixels. The device is based on a two-dimensional array of metal-semiconductor-metal photodetectors with individually tunable photoresponsivity values. We demonstrate its use for the classification of handwritten digits with an accuracy comparable to that of conventional systems, but with lower delay and energy consumption.
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Submitted 29 September, 2021;
originally announced September 2021.
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Intrinsic Donor-Bound Excitons in Ultraclean Monolayer Semiconductors
Authors:
Pasqual Rivera,
Minhao He,
Bumho Kim,
Song Liu,
Carmen Rubio-Verdú,
Hyowon Moon,
Lukas Mennel,
Daniel A. Rhodes,
Hongyi Yu,
Takashi Taniguchi,
Kenji Watanabe,
Jiaqiang Yan,
David G. Mandrus,
Hanan Dery,
Abhay Pasupathy,
Dirk Englund,
James Hone,
Wang Yao,
Xiaodong Xu
Abstract:
The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy sepa…
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The monolayer transition metal dichalcogenides are an emergent semiconductor platform exhibiting rich excitonic physics with coupled spin-valley degree of freedom and optical addressability. Here, we report a new series of low energy excitonic emission lines in the photoluminescence spectrum of ultraclean monolayer WSe2. These excitonic satellites are composed of three major peaks with energy separations matching known phonons, and appear only with electron do**. They possess homogenous spatial and spectral distribution, strong power saturation, and anomalously long population (> 6 $μ$s) and polarization lifetimes (> 100 ns). Resonant excitation of the free inter- and intra-valley bright trions leads to opposite optical orientation of the satellites, while excitation of the free dark trion resonance suppresses the satellites photoluminescence. Defect-controlled crystal synthesis and scanning tunneling microscopy measurements provide corroboration that these features are dark excitons bound to dilute donors, along with associated phonon replicas. Our work opens opportunities to engineer homogenous single emitters and explore collective quantum optical phenomena using intrinsic donor-bound excitons in ultraclean 2D semiconductors.
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Submitted 12 January, 2021;
originally announced January 2021.
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Real-time image processing with a 2D semiconductor neural network vision sensor
Authors:
Lukas Mennel,
Joanna Symonowicz,
Stefan Wachter,
Dmitry K. Polyushkin,
Aday J. Molina-Mendoza,
Thomas Mueller
Abstract:
In recent years, machine vision has taken huge leaps and is now becoming an integral part of various intelligent systems, including autonomous vehicles, robotics, and many others. Usually, visual information is captured by a frame-based camera, converted into a digital format, and processed afterwards using a machine learning algorithm such as an artificial neural network (ANN). A large amount of…
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In recent years, machine vision has taken huge leaps and is now becoming an integral part of various intelligent systems, including autonomous vehicles, robotics, and many others. Usually, visual information is captured by a frame-based camera, converted into a digital format, and processed afterwards using a machine learning algorithm such as an artificial neural network (ANN). A large amount of (mostly redundant) data being passed through the entire signal chain, however, results in low frame rates and large power consumption. Various visual data preprocessing techniques have thus been developed that allow to increase the efficiency of the subsequent signal processing in an ANN. Here, we demonstrate that an image sensor itself can constitute an ANN that is able to simultaneously sense and process optical images without latency. Our device is based on a reconfigurable two-dimensional (2D) semiconductor photodiode array, with the synaptic weights of the network being stored in a continuously tunable photoresponsivity matrix. We demonstrate both supervised and unsupervised learning and successfully train the sensor to classify and encode images, that are optically projected onto the chip, with a throughput of 20 million bins per second.
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Submitted 31 August, 2019;
originally announced September 2019.
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Analogue two-dimensional semiconductor electronics
Authors:
Dmitry K. Polyushkin,
Stefan Wachter,
Lukas Mennel,
Maksym Paliy,
Giuseppe Iannaccone,
Gianluca Fiori,
Daniel Neumaier,
Barbara Canto,
Thomas Mueller
Abstract:
While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital cou…
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While digital electronics has become entirely ubiquitous in today's world and appears in the limelight, analogue electronics is still playing a crucial role in many devices and applications. Current analogue circuits are mostly manufactured using silicon as active material, but the ever present demand for improved performance, new devices and flexible integration has - similar to their digital counterparts - pushed for research into alternative materials. In recent years two-dimensional materials have received considerable research interest, fitting their promising properties for future electronics. In this work we demonstrate an operational amplifier - a basic building block of analogue electronics - using a two-dimensional semiconductor, namely molybdenum disulfide, as active material. Our device is capable of stable operation with good performance, and we demonstrate its use in feedback circuits such as inverting amplifiers, integrators, log amplifiers, and transimpedance amplifiers.
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Submitted 31 August, 2019;
originally announced September 2019.
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Optical imaging of strain in two-dimensional crystals
Authors:
Lukas Mennel,
Marco M. Furchi,
Stefan Wachter,
Matthias Paur,
Dmitry K. Polyushkin,
Thomas Mueller
Abstract:
Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain, as they can sustain very large deformations without breaking. Various optical techniques have been employed to probe strain in two-dimensional materials, inclu…
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Strain engineering is widely used in material science to tune the (opto-)electronic properties of materials and enhance the performance of devices. Two-dimensional atomic crystals are a versatile playground to study the influence of strain, as they can sustain very large deformations without breaking. Various optical techniques have been employed to probe strain in two-dimensional materials, including micro-Raman and photoluminescence spectroscopy. Here we demonstrate that optical second harmonic generation constitutes an even more powerful technique, as it allows to extract the full strain tensor with a spatial resolution below the optical diffraction limit. Our method is based on the strain-induced modification of the nonlinear susceptibility tensor due to a photoelastic effect. Using a two-point bending technique, we determine the photoelastic tensor elements of molybdenum disulfide. Once identified, these parameters allow us to spatially image the two-dimensional strain field in an inhomogeneously strained sample.
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Submitted 7 March, 2019;
originally announced March 2019.
