Paving the Way for Pass Disturb Free Vertical NAND Storage via A Dedicated and String-Compatible Pass Gate
Authors:
Zijian Zhao,
Sola Woo,
Khandker Akif Aabrar,
Sharadindu Gopal Kirtania,
Zhouhang Jiang,
Shan Deng,
Yi Xiao,
Halid Mulaosmanovic,
Stefan Duenkel,
Dominik Kleimaier,
Steven Soss,
Sven Beyer,
Rajiv Joshi,
Scott Meninger,
Mohamed Mohamed,
Kijoon Kim,
Jongho Woo,
Suhwan Lim,
Kwangsoo Kim,
Wanki Kim,
Daewon Ha,
Vijaykrishnan Narayanan,
Suman Datta,
Shimeng Yu,
Kai Ni
Abstract:
In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-…
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In this work, we propose a dual-port cell design to address the pass disturb in vertical NAND storage, which can pass signals through a dedicated and string-compatible pass gate. We demonstrate that: i) the pass disturb-free feature originates from weakening of the depolarization field by the pass bias at the high-${V}_{TH}$ (HVT) state and the screening of the applied field by channel at the low-${V}_{TH}$ (LVT) state; ii) combined simulations and experimental demonstrations of dual-port design verify the disturb-free operation in a NAND string, overcoming a key challenge in single-port designs; iii) the proposed design can be incorporated in a highly scaled vertical NAND FeFET string and the pass gate can be incorporated into the existing 3D NAND with the negligible overhead of the pass gate interconnection through a global bottom pass gate contact in the substrate.
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Submitted 7 March, 2024;
originally announced March 2024.
Powering Disturb-Free Reconfigurable Computing and Tunable Analog Electronics with Dual-Port Ferroelectric FET
Authors:
Zijian Zhao,
Shan Deng,
Swetaki Chatterjee,
Zhouhang Jiang,
Muhammad Shaffatul Islam,
Yi Xiao,
Yixin Xu,
Scott Meninger,
Mohamed Mohamed,
Rajiv Joshi,
Yogesh Singh Chauhan,
Halid Mulaosmanovic,
Stefan Duenkel,
Dominik Kleimaier,
Sven Beyer,
Hussam Amrouch,
Vijaykrishnan Narayanan,
Kai Ni
Abstract:
Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET w…
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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths.
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Submitted 2 May, 2023;
originally announced May 2023.
