Reinforcement learning-guided long-timescale simulation of hydrogen transport in metals
Authors:
Hao Tang,
Boning Li,
Yixuan Song,
Mengren Liu,
Haowei Xu,
Guoqing Wang,
Heejung Chung,
Ju Li
Abstract:
Atomic diffusion in solids is an important process in various phenomena. However, atomistic simulations of diffusion processes are confronted with the timescale problem: the accessible simulation time is usually far shorter than that of experimental interests. In this work, we developed a long-timescale method using reinforcement learning that simulates diffusion processes. As a testbed, we simula…
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Atomic diffusion in solids is an important process in various phenomena. However, atomistic simulations of diffusion processes are confronted with the timescale problem: the accessible simulation time is usually far shorter than that of experimental interests. In this work, we developed a long-timescale method using reinforcement learning that simulates diffusion processes. As a testbed, we simulate hydrogen diffusion in pure metals and a medium entropy alloy, CrCoNi, getting hydrogen diffusivity reasonably consistent with previous experiments. We also demonstrate that our method can accelerate the sampling of low-energy configurations compared to the Metropolis-Hastings algorithm using hydrogen migration to copper (111) surface sites as an example.
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Submitted 5 July, 2023;
originally announced July 2023.
Tight-Binding Bandstructure of $β-$ and $α-$ phase Ga$_2$O$_3$ and Al$_2$O$_3$
Authors:
Yifan,
Zhang,
Mengren,
Liu,
Guru Khalsa,
Debdeep Jena
Abstract:
Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field, high-frequency, and high-temperature electronics and visible and ultraviolet photonics. A minimal tight-binding model is developed to reproduce the first-principles ele…
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Rapid design and development of the emergent ultra-wide bandgap semiconductors Ga$_2$O$_3$ and Al$_2$O$_3$ requires a compact model of their electronic structures, accurate over the broad energy range accessed in future high-field, high-frequency, and high-temperature electronics and visible and ultraviolet photonics. A minimal tight-binding model is developed to reproduce the first-principles electronic structures of the $β-$ and $α-$ phases of Ga$_2$O$_3$ and Al$_2$O$_3$ throughout their reciprocal spaces. Accurately reproducing the bandgap, orbital character, and effective mass and high-energy features of the conduction band, this compact model will assist in the investigation and design of the electrical and optical properties of bulk materials, devices, and quantum confined heterostructures.
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Submitted 6 November, 2021;
originally announced November 2021.
