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Development of an integrated device based on the gain/phase detector and Arduino platform for measuring magnetoelastic resonance
Authors:
Wenderson R. F. Silva,
Rafael O. R. R. Cunha,
Joaquim B. S. Mendes
Abstract:
This study presents the development of an integrated device for measuring magnetoelastic resonance, utilizing a gain/phase detector and the Arduino platform. The device stands out for its simplicity, low cost, and efficiency. It employs the Arduino's ATmega328P microcontroller, coupled with the AD8302, and an intuitive graphical interface developed in Python, which facilitates the measurement of m…
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This study presents the development of an integrated device for measuring magnetoelastic resonance, utilizing a gain/phase detector and the Arduino platform. The device stands out for its simplicity, low cost, and efficiency. It employs the Arduino's ATmega328P microcontroller, coupled with the AD8302, and an intuitive graphical interface developed in Python, which facilitates the measurement of magnetoelastic signals in sensors. The device's validation is carried out through measurements of mass deposits on magnetoelastic sensors, confirming its accuracy and functionality. This advancement offers a practical and portable solution for detecting magnetoelastic resonances, promoting the use of these technologies in field environments and in diverse scientific applications. The integration of components into a compact, robust, and low-cost electronic circuit, along with an easy-to-operate graphical interface, significantly simplifies the complexity of the components, making the equipment complete and readily operational.
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Submitted 27 June, 2024;
originally announced June 2024.
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Unraveling the Spin-to-Charge Current Conversion Mechanism and Charge Transfer Dynamics at Interface of Graphene/WS$_2$ Heterostructures at Room Temperature
Authors:
Rafael O. Cunha,
Yunier Garcia-Basabe,
Dunieskys G. Larrude,
Matheus Gamino,
Erika N. Lima,
Felipe Crasto de Lima,
Adalberto Fazzio,
Sergio M. Rezende,
Antonio Azevedo,
Joaquim B. S. Mendes
Abstract:
We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum**…
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We report experimental investigations of spin-to-charge current conversion and charge transfer dynamics (CT) at the interface of graphene/WS$_2$ van der Waals heterostructure. Pure spin current was produced by the spin precession in the microwave-driven ferromagnetic resonance of a permalloy film (Py-Ni$_{81}$Fe$_{19}$) and injected into the graphene/WS$_2$ heterostructure through the spin pum** process. The observed spin-to-charge current conversion in the heterostructure is attributed to inverse Rashba-Edelstein effect (IREE) at the graphene/WS$_2$ interface. Interfacial CT dynamics in this heterostructure was investigated based on the framework of core-hole-clock (CHC) approach. The results obtained from spin pum** and CHC studies show that the spin-to-charge current conversion and charge transfer process are more efficient in the graphene/WS$_2$ heterostructure compared to isolated WS2 and graphene films. The results show that the presence of WS$_2$ flakes improves the current conversion efficiency. These experimental results are corroborated by density functional theory (DFT) calculations, which reveal (i) Rashba spin-orbit splitting of graphene orbitals and (ii) electronic coupling between graphene and WS$_2$ orbitals. This study provides valuable insights for optimizing the design and performance of spintronic devices.
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Submitted 28 May, 2024;
originally announced May 2024.
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Anomalous Spin and Orbital Hall Phenomena in Antiferromagnetic Systems
Authors:
J. E. Abrão,
E. Santos,
J. L. Costa,
J. G. S. Santos,
J. B. S. Mendes,
A. Azevedo
Abstract:
We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic (AF) materials via orbital pum** experiments. Conducting spin and orbital pum** experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly observe strong spin and orbital anomalous signals in an out-of-plane configuration. We report a sevenfold increase in the signal of the anomalous inverse orbital Hall effect…
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We investigate anomalous spin and orbital Hall phenomena in antiferromagnetic (AF) materials via orbital pum** experiments. Conducting spin and orbital pum** experiments on YIG/Pt/Ir20Mn80 heterostructures, we unexpectedly observe strong spin and orbital anomalous signals in an out-of-plane configuration. We report a sevenfold increase in the signal of the anomalous inverse orbital Hall effect (AIOHE) compared to conventional effects. Our study suggests expanding the Orbital Hall angle (θ_OH) to a rank 3 tensor, akin to the Spin Hall angle (θ_SH), to explain AIOHE. This work pioneers converting spin-orbital currents into charge current, advancing the spin-orbitronics domain in AF materials.
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Submitted 29 April, 2024;
originally announced April 2024.
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Probing the Spin-Momentum Locking in Rashba Surfaces via Spin Current
Authors:
J. E. Abrão,
E. Gomes da Silva,
G. Rodrigues-Junior,
J. B. S. Mendes,
A. Azevedo
Abstract:
In this work, we explore the intriguing spin-momentum locking phenomenon within the Rashba states of antimony (Sb) films. By combining spin pum** with the flow of an external charge current, we reveal the topological properties of surface states in Sb films. Taking advantage of the well-defined spin polarization of both spin-momentum-locked charge currents and spin-pumped currents, we demonstrat…
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In this work, we explore the intriguing spin-momentum locking phenomenon within the Rashba states of antimony (Sb) films. By combining spin pum** with the flow of an external charge current, we reveal the topological properties of surface states in Sb films. Taking advantage of the well-defined spin polarization of both spin-momentum-locked charge currents and spin-pumped currents, we demonstrate precise manipulation over the direction and magnitude of the resulting charging current, generated through the inverse Rashba-Edelstein effect. This fascinating phenomenon is attributed to the dynamic interaction between the accumulation of out-of-equilibrium pumped spins and the flowing spins, intrinsically locked perpendicular to the direction of the charge current. The results show that Sb as a promising material for basic and applied investigation of spintronics phenomena. We believe that the nanostructures investigated here open the way for the development of low-power logic gates operating in the range of a few tens of microamperes.
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Submitted 22 April, 2024;
originally announced April 2024.
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A biosensor based on magnetoelastic waves for detection of antibodies in human plasma for COVID-19 serodiagnosis
Authors:
Wenderson R. F. Silva,
Larissa C. P. Monteiro,
Renato L. Senra,
Eduardo N. D. de Araujo,
Rafael O. R. R. Cunha,
Tiago A. O. Mendes,
Joaquim B. S. Mendes
Abstract:
The study proposes a new efficient wireless biosensor based on magnetoelastic waves for the detection of antibodies in human plasma, aiming at the serological diagnosis of COVID-19. The biosensor was functionalized with the N antigen - nucleocapsid phosphoprotein of the SARS-CoV-2 virus. Validation analyses, by sodium dodecyl-sulfate polyacrylamide gel electrophoresis (SDS-PAGE), Western blotting,…
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The study proposes a new efficient wireless biosensor based on magnetoelastic waves for the detection of antibodies in human plasma, aiming at the serological diagnosis of COVID-19. The biosensor was functionalized with the N antigen - nucleocapsid phosphoprotein of the SARS-CoV-2 virus. Validation analyses, by sodium dodecyl-sulfate polyacrylamide gel electrophoresis (SDS-PAGE), Western blotting, atomic force microscopy (AFM), scanning electron microscopy (SEM), micro-Raman spectroscopy, confirmed the selectivity and effective surface functionalization of the biosensor. The research successfully obtained, expressed and purified the recombinant antigen, while plasma samples from COVID-19 positive and negative patients were used to test the performance of the biosensor. A comparison of performance with the ELISA method revealed equivalent diagnostic power. These results indicate the robustness of the biosensor in reliably differentiating between positive and negative samples, highlighting its potential as an efficient and low-cost tool for the serological diagnosis of COVID-19. In addition to being fast to execute and having the potential for automation in large-scale diagnostic studies, the biosensor fills a significant gap in existing SARS-CoV-2 detection approaches.
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Submitted 9 June, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Negative orbital Hall effect in Germanium
Authors:
E. Santos,
J. E. Abrao,
J. L. Costa,
J. G. S. Santos,
J. B. S. Mendes,
A. Azevedo
Abstract:
Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pum** technique where spin-orbital coupled current is injected into Ge films using YIG/Pt(2)/Ge($t_{Ge}$) and YIG/W(2)/Ge($t_{Ge}$) heterostructures. Through comprehensive analysis, we observe significant reductions in the signals generated by…
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Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pum** technique where spin-orbital coupled current is injected into Ge films using YIG/Pt(2)/Ge($t_{Ge}$) and YIG/W(2)/Ge($t_{Ge}$) heterostructures. Through comprehensive analysis, we observe significant reductions in the signals generated by coherent (RF-driven) and incoherent (thermal-driven) spin-orbital pum** techniques. These reductions are attributed to the presence of a remarkable strong negative IOHE in Ge, showing its magnitude comparable to the spin-to-charge signal in Pt. Our findings reveal that although the spin-to-charge conversion in Ge is negligible, the orbital-to-charge conversion exhibits large magnitude. Our results are innovative and pioneering in the investigation of negative IOHE by the injection of spin-orbital currents.
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Submitted 11 March, 2024;
originally announced March 2024.
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Bulk and Interface Effects Based on Rashba-Like States in Ti and Ru Nanoscale-Thick Films: Implications for Orbital-Charge Conversion in Spintronic Devices
Authors:
Eduardo S. Santos,
José E. Abrão,
Jefferson L. Costa,
João G. S. Santos,
Kacio R. Mello,
Andriele S. Vieira,
Tulio C. R. Rocha,
Thiago J. A. Mori,
Rafael O. Cunha,
Joaquim B. S. Mendes,
Antonio Azevedo
Abstract:
In this work, employing spin-pum** techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR si…
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In this work, employing spin-pum** techniques driven by both ferromagnetic resonance (SP-FMR) and longitudinal spin Seebeck effect (LSSE) to manipulate and direct observe orbital currents, we investigated the volume conversion of spin-orbital currents into charge-current in YIG(100nm)/Pt(2nm)/NM2 structures, where NM2 represents Ti or Ru. While the YIG/Ti bilayer displayed a negligible SP-FMR signal, the YIG/Pt/Ti structure exhibited a significantly stronger signal attributed to the orbital Hall effect of Ti. Substituting the Ti layer with Ru revealed a similar phenomenon, wherein the effect is ascribed to the combined action of both spin and orbital Hall effects. Furthermore, we measured the SP-FMR signal in the YIG/Pt(2)/Ru(6)/Ti(6) and YIG/Pt(2)/Ti(6)/Ru(6) heterostructures by just altering the stack order of Ti and Ru layers, where the peak value of the spin pum** signal is larger for the first sample. To verify the influence on the oxidation of Ti and Ru films, we studied a series of thin films subjected to controlled and natural oxidation. As Cu and CuOx is a system that is already known to be highly influenced by oxidation, this metal was chosen to carry out this study. We investigated these samples using SP-FMR in YIG/Pt(2)/CuOx(tCu) and X-ray absorption spectroscopy and concluded that samples with natural oxidation of Cu exhibit more significant results than those when the CuOx is obtained by reactive sputtering. In particular, samples where the Cu layer is naturally oxidized exhibit a Cu2O-rich phase. Our findings help to elucidate the mechanisms underlying the inverse orbital Hall and inverse orbital Rashba-Edelstein-like effects. These insights indeed contribute to the advancement of devices that rely on orbital-charge conversion.
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Submitted 24 April, 2024; v1 submitted 31 January, 2024;
originally announced February 2024.
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Optical trap** and manipulation of fluorescent polymer-based nanostructures: measuring optical properties of materials in the nanoscale range
Authors:
T. A. Moura,
M. L. Lana Júnior,
C. H. V. da Silva,
L. R. Américo,
J. B. S. Mendes,
M. C. N. P. Brandão,
A. G. S. Subtil,
M. S. Rocha
Abstract:
We present a novel approach to determine the optical properties of materials in the nanoscale range using optical tweezers (OT). Fluorescent polymer-based nanostructures (pdots) are optically trapped in a Gaussian beam OT and the trap stiffness is studied as a function of various parameters of interest. We explicitly show that properties such as the refractive index and the optical anisotropy of t…
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We present a novel approach to determine the optical properties of materials in the nanoscale range using optical tweezers (OT). Fluorescent polymer-based nanostructures (pdots) are optically trapped in a Gaussian beam OT and the trap stiffness is studied as a function of various parameters of interest. We explicitly show that properties such as the refractive index and the optical anisotropy of these nanostructures can be determined with high accuracy by comparing the experimental data to an optical force model. In particular, we demonstrate that the effective optical properties of these pdots can be modulated by changing the light wavelength that excites the sample, opening the door for a fine tuning of their optical response, with possible applications in the development of new sensors and/or other optoelectronic devices.
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Submitted 31 October, 2023; v1 submitted 6 October, 2023;
originally announced October 2023.
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Exploring orbital-charge conversion mediated by interfaces with copper through spin-orbital pum**
Authors:
E. Santos,
J. E. Abrão,
A. S. Vieira,
J. B. S. Mendes,
R. L. Rodríguez-Suárez,
A. Azevedo
Abstract:
We investigated how different materials affect the orbital-charge conversion in heterostructures with the naturally oxidized cooper cap** layer. When we added a thin layer of $CuOx(3nm)$ onto yttrium iron garnet $(YIG)/W$ stacks, we observed a significant reduction in the charge current signal measured by means the spin pum** effect technique. This finding contrasts with the results of a prior…
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We investigated how different materials affect the orbital-charge conversion in heterostructures with the naturally oxidized cooper cap** layer. When we added a thin layer of $CuOx(3nm)$ onto yttrium iron garnet $(YIG)/W$ stacks, we observed a significant reduction in the charge current signal measured by means the spin pum** effect technique. This finding contrasts with the results of a prior study conducted on YIG/Pt/CuOx, which reported the opposite effect. On the other hand, when we added the same $CuOx(3nm)$ layer to $YIG/Ti(4nm)$ structures, there was not much change in the spin pum** signal. This occurred because Ti does not generate much orbital current at the $Ti/CuOx$ interface, unlike Pt, due to its weaker spin-orbit coupling. Interestingly, when we added the $CuOx(3nm)$ layer to $SiO_{2}/Py(5nm)/Pt(4nm)$ structures, the spin pum** signal increased. However, in $SiO_{2}/CuOx(3nm)/Pt(4nm)/Py(5nm)$ structures, the signal decreased. Finally, we delve into a theoretical analysis of the spin (orbital) Hall effect in YIG/Heavy-metal systems. These findings have the potential to advance research in the innovative field of orbitronics and contribute to the development of new technologies based on spin-orbital conversion.
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Submitted 11 January, 2024; v1 submitted 15 September, 2023;
originally announced September 2023.
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Surface-state mediated spin-to-charge conversion in Sb films via bilateral spin current injection
Authors:
E. Gomes,
J. E. Abrão,
E. S. Santos,
S. Bedanta,
H. Ding,
J. B. S. Mendes,
A. Azevedo
Abstract:
The spin-to-charge conversion phenomena is investigated in a trilayer structure consisting of Co(12 nm)/Sb(t)/Py(12 nm), where the thickness t of the antimony layer is varied. Using the spin-pum** technique, a pure spin current is injected from both FM layers into the middle layer, the DC voltage is then measured. We observe a spin-to-charge mechanism in the Sb layer that exhibits striking simil…
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The spin-to-charge conversion phenomena is investigated in a trilayer structure consisting of Co(12 nm)/Sb(t)/Py(12 nm), where the thickness t of the antimony layer is varied. Using the spin-pum** technique, a pure spin current is injected from both FM layers into the middle layer, the DC voltage is then measured. We observe a spin-to-charge mechanism in the Sb layer that exhibits striking similarities to the inverse Rashba-Edelstein effect (IREE), driven by surface states.
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Submitted 3 September, 2023;
originally announced September 2023.
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On the use of organic semiconductors as handles for optical tweezers experiments: trap** and manipulating polyaniline (PANI) microparticles
Authors:
Kairon M. Oliveira,
Tiago A. Moura,
Janaisa L. C. Lucas,
Alvaro V. N. C. Teixeira,
Marcio S. Rocha,
Joaquim B. S. Mendes
Abstract:
Here we propose the use of the organic semiconductor polyaniline (PANI) for the preparation of spherical-shaped microparticles to serve as handles in optical tweezers (OT) experiments. The stable trap** and manipulation of PANI beads was demonstrated for the first time, using a Gaussian ($TEM_{00}$) beam optical tweezers. The trap stiffness was characterized for various different parameters such…
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Here we propose the use of the organic semiconductor polyaniline (PANI) for the preparation of spherical-shaped microparticles to serve as handles in optical tweezers (OT) experiments. The stable trap** and manipulation of PANI beads was demonstrated for the first time, using a Gaussian ($TEM_{00}$) beam optical tweezers. The trap stiffness was characterized for various different parameters such as the bead radius, the laser power and the distance between the bead and the coverslip of the sample chamber, attesting the viability of using such material for optical manipulation. Since the effective optical properties of PANI can be modulated by the synthesis process, new related applications are also proposed. The results of the present work therefore open the door for using semiconductor polymeric materials in OT applications.
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Submitted 5 March, 2023;
originally announced March 2023.
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Efficient spin-to-charge interconversion in Weyl semimetal TaP at room temperature
Authors:
J. B. S. Mendes,
R. O. Cunha,
S. O. Ferreira,
R. D. dos Reis,
M. Schmidt,
M. Nicklas,
S. M. Rezende,
A. Azevedo
Abstract:
In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pum** effect (SPE) from microwave-driven ferromagnetic resonance and are detect…
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In this paper we present spin-to-charge current conversion properties in the Weyl semimetal TaP by means of the inverse Rashba-Edelstein effect (IREE) with the integration of this quantum material with the ferromagnetic metal Permalloy $(Py=Ni_{81}Fe_{19})$. The spin currents are generated in the Py layer by the spin pum** effect (SPE) from microwave-driven ferromagnetic resonance and are detected by a dc voltage along the TaP crystal, at room temperature. We observe a field-symmetric voltage signal without the contamination of asymmetrical lines due to spin rectification effects observed in studies using metallic ferromagnets. The observed voltage is attributed to spin-to-charge current conversion based on the IREE, made possible by the spin-orbit coupling induced intrinsically by the bulk band structure of Weyl semimetals. The measured IREE coefficient $λ_{IREE}=(0.30 \pm{0.01})$ nm is two orders of magnitude larger than in graphene and is comparable to or larger than the values reported for some metallic interfaces and for several topological insulators.
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Submitted 10 August, 2022;
originally announced August 2022.
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Inverse Orbital Torque via Spin-Orbital Entangled States
Authors:
E. Santos,
J. E. Abrão,
Dongwook Go,
L. K. de Assis,
Yuriy Mokrousov,
J. B. S. Mendes,
A. Azevedo
Abstract:
While current-induced torque by orbital current has been experimentally found in various structures, evidence for its reciprocity has been missing so far. Here, we report experimental evidence of strong inverse orbital torque in YIG/Pt/CuOx (YIG = Y3Fe5O12) mediated by spin-orbital entangled electronic states in Pt. By injecting spin current from YIG to Pt by the spin pum** via ferromagnetic res…
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While current-induced torque by orbital current has been experimentally found in various structures, evidence for its reciprocity has been missing so far. Here, we report experimental evidence of strong inverse orbital torque in YIG/Pt/CuOx (YIG = Y3Fe5O12) mediated by spin-orbital entangled electronic states in Pt. By injecting spin current from YIG to Pt by the spin pum** via ferromagnetic resonance and by the spin Seebeck effect, we find a pronounced inverse spin Hall effect-like signal. While a part of the signal is explained as due to the inverse spin-orbital Hall effect in Pt, we also find substantial increase of the signal in YIG/Pt/CuOx structures compared to the signal in YIG/Pt. We attribute this to the inverse orbital Rashba-Edelstein effect at Pt/CuOx interface mediated by the spin-orbital entangled states in Pt. Our work paves the way toward understanding of spin-orbital entangled physics in nonequilibrium and provides a way for electrical detection of the orbital current in orbitronic device applications.
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Submitted 30 September, 2022; v1 submitted 4 April, 2022;
originally announced April 2022.
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Magnon-mediated spin currents in Tm3Fe5O12/Pt with perpendicular magnetic anisotropy
Authors:
G. L. S. Vilela,
J. E. Abrao,
E. Santos,
Y. Yao,
J. B. S. Mendes,
R. L. Rodriguez-Suarez,
S. M. Rezende,
W. Han,
A. Azevedo,
J. S. Moodera
Abstract:
The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more effic…
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The control of pure spin currents carried by magnons in magnetic insulator (MI) garnet films with a robust perpendicular magnetic anisotropy (PMA) is of great interest to spintronic technology as they can be used to carry, transport and process information. Garnet films with PMA present labyrinth domain magnetic structures that enrich the magnetization dynamics, and could be employed in more efficient wave-based logic and memory computing devices. In MI/NM bilayers, where NM being a normal metal providing a strong spin-orbit coupling, the PMA benefits the spin-orbit torque (SOT) driven magnetization's switching by lowering the needed current and rendering the process faster, crucial for develo** magnetic random-access memories (SOT-MRAM). In this work, we investigated the magnetic anisotropies in thulium iron garnet (TIG) films with PMA via ferromagnetic resonance measurements, followed by the excitation and detection of magnon-mediated pure spin currents in TIG/Pt driven by microwaves and heat currents. TIG films presented a Gilbert dam** constant α~0.01, with resonance fields above 3.5 kOe and half linewidths broader than 60 Oe, at 300 K and 9.5 GHz. The spin-to-charge current conversion through TIG/Pt was observed as a micro-voltage generated at the edges of the Pt film. The obtained spin Seebeck coefficient was 0.54 μV/K, confirming also the high interfacial spin transparency.
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Submitted 21 September, 2020;
originally announced September 2020.
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Unveiling the polarity of the spin-to-charge current conversion in $Bi_2Se_3$
Authors:
J. B. S. Mendes,
M. Gamino,
R. O. Cunha,
J. E. Abrão,
S. M. Rezende,
A. Azevedo
Abstract:
We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pum** process in which the spin precession is obtained by…
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We report an investigation of the spin- to charge-current conversion in sputter-deposited films of topological insulator $Bi_2Se_{3}$ onto single crystalline layers of YIG $(Y_{3}Fe_{5}O_{12})$ and polycrystalline films of Permalloy $(Py = Ni_{81}Fe_{19})$. Pure spin current was injected into the $Bi_{2}Se_{3}$ layer by means of the spin pum** process in which the spin precession is obtained by exciting the ferromagnetic resonance of the ferromagnetic film. The spin-current to charge-current conversion, occurring at the $Bi_{2}Se_{3}/$ferromagnet interface, was attribute to the inverse Rashba-Edelstein effect (IREE). By analyzing the data as a function of the $Bi_{2}Se_{3}$ thickness we calculated the IREE length used to characterize the efficiency of the conversion process and found that 1.2 pm $\leq|λ_{IREE}|\leq$ 2.2 pm. These results support the fact that the surface states of $Bi_{2}Se_{3}$ have a dominant role in the spin-charge conversion process, and the mechanism based on the spin diffusion process plays a secondary role. We also discovered that the spin- to charge-current mechanism in $Bi_{2}Se_{3}$ has the same polarity as the one in Ta, which is the opposite to the one in Pt. The combination of the magnetic properties of YIG and Py, with strong spin-orbit coupling and dissipationless surface states topologically protected of $Bi_{2}Se_{3}$ might lead to spintronic devices with fast and efficient spin-charge conversion.
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Submitted 28 August, 2020;
originally announced August 2020.
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Germanium microparticles as optically induced oscillators in optical tweezers
Authors:
W. H. Campos,
T. A. Moura,
O. J. B. J. Marques,
J. M. Fonseca,
W. A. Moura-Melo,
M. S. Rocha,
J. B. S. Mendes
Abstract:
Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically induced oscillators when subjected to a highly focused laser beam. Such unusual motion is due to the competition between the usual optical forces [1-3] and the radi…
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Oscillatory dynamics is a key tool in optical tweezers applications. It is usually implemented by mechanical interventions that cannot be optically controlled. In this work we show that Germanium semiconductor beads behave as optically induced oscillators when subjected to a highly focused laser beam. Such unusual motion is due to the competition between the usual optical forces [1-3] and the radiometric force related to thermal effects, which pushes the beads from the focal region [4]. We characterize the behavior of the Germanium beads in detail and propose a model accounting for the related forces, in good agreement with the experimental data. The well defined direction of oscillations can be manipulated by the polarization of the light beam. Such kind of system can potentially revolutionize the field of optical manipulation, contributing to the design of single molecule machines and the application of oscillatory forces in macromolecules and other soft matter systems.
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Submitted 28 March, 2019;
originally announced March 2019.
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Direct detection of induced magnetic moment and efficient spin-to-charge conversion in graphene/ferromagnetic structures
Authors:
J. B. S. Mendes,
O. Alves Santos,
T. Chagas,
R. Magalhães-Paniago,
T. J. A. Mori,
J. Holanda,
L. M. Meireles,
R. G. Lacerda,
A. Azevedo,
S. M. Rezende
Abstract:
This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray ab…
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This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique ferrimagnetic insulator yttrium iron garnet (YIG = $Y_{3}Fe_{5}O_{12}$) as well as with the ferromagnetic metal permalloy (Py = $Ni_{81}Sb_{19}$). By means of X-ray absorption spectroscopy (XAS) and magnetic circular dichroism (XMCD) techniques, we show that the carbon atoms of the SLG acquires an induced magnetic moment due to the proximity effect with the magnetic layer. The spin currents are generated in the magnetic layer by spin pum** from microwave driven ferromagnetic resonance and are detected by a dc voltage along the graphene layer, at room temperature. The spin-to-charge current conversion, occurring at the graphene layer, is explained by the extrinsic spin-orbit interaction (SOI) induced by the proximity effect with the ferromagnetic layer. The results obtained for the SLG/YIG and SLG/Py systems confirm very similar values for the IREE parameter, which are larger than the values reported in previous studies for SLG. We also report systematic investigations of the electronic and magnetic properties of the SLG/YIG by means of scanning tunneling microscopy (STM).
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Submitted 2 December, 2018;
originally announced December 2018.
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How light absorption modifies the radiative force on a microparticle in optical tweezers
Authors:
W. H. Campos,
J. M. Fonseca,
J. B. S. Mendes,
M. S. Rocha,
W. A. Moura-Melo
Abstract:
Reflection and refraction of light can be used to trap small dielectric particles in the geometrical optics regime. Absorption of light is usually neglected in theoretical calculations, but it is known that it occurs in the optical trap** of metallic particles. Also, recent experiments with semi-transparent microparticles have shown that absorption of light is important to explain their opticall…
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Reflection and refraction of light can be used to trap small dielectric particles in the geometrical optics regime. Absorption of light is usually neglected in theoretical calculations, but it is known that it occurs in the optical trap** of metallic particles. Also, recent experiments with semi-transparent microparticles have shown that absorption of light is important to explain their optically induced oscillations. Here, we propose a generalization of Ashkin's model for the radiative force exerted on a spherical bead, including the contribution due to attenuation/absorption of light in the bulk of the particle. We discuss in detail the balance between refraction, reflection and absorption for different optical parameters and particle sizes. A detailed example is provided in order to clarify how the model can be applied, and it is obtained that the radiative force can either increase or decrease with absorption, depending on the particle size. Our findings contribute to the understanding of optical trap** of light-absorbing particles, and may be used to predict whenever absorption is important in real experiments.
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Submitted 1 February, 2018;
originally announced February 2018.
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Dirac-Surface-State-Dominated Spin to Charge Current Conversion in the Topological Insulator $(Bi_{0.22}Sb_{0.78})_2Te_3$ Films at Room Temperature
Authors:
J. B. S. Mendes,
O. Alves-Santos,
J. Holanda,
R. P. Loreto,
C. I. L. de Araujo,
Cui-Zu Chang,
J. S. Moodera,
A. Azevedo,
S. M. Rezende
Abstract:
We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, spin pum** (SPE) and spin Seebeck effects (SSE). In the first we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current…
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We report the spin to charge current conversation in an intrinsic topological insulator (TI) $(Bi_{0.22}Sb_{0.78})_2Te_3$ film at room temperature. The spin currents are generated in a thin layer of permalloy (Py) by two different processes, spin pum** (SPE) and spin Seebeck effects (SSE). In the first we use microwave-driven ferromagnetic resonance of the Py film to generate a SPE spin current that is injected into the TI $(Bi_{0.22}Sb_{0.78})_2Te_3$ layer in direct contact with Py. In the second we use the SSE in the longitudinal configuration in Py without contamination by the Nernst effect made possible with a thin NiO layer between the Py and $(Bi_{0.22}Sb_{0.78})_2Te_3$ layers. The spin-to-charge current conversion is attributed to the inverse Edelstein effect (IEE) made possible by the spin-momentum locking in the electron Fermi contours due to the Rashba field. The measurements by the two techniques yield very similar values for the IEE parameter, which are larger than the reported values in the previous studies on topological insulators.
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Submitted 17 October, 2017;
originally announced October 2017.
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Topological insulator particles as optically induced oscillators: towards dynamical force measurements and optical rheology
Authors:
W. H. Campos,
J. M. Fonseca,
V. E. de Carvalho,
J. B. S. Mendes,
M. S. Rocha,
W. A. Moura-Melo
Abstract:
We report the first experimental study upon the optical trap** and manipulation of topological insulator (TI) particles. By virtue of the unique TI properties, which have a conducting surface and an insulating bulk, the particles present a peculiar behaviour in the presence of a single laser beam optical tweezers: they oscillate in a plane perpendicular to the direction of the laser propagation,…
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We report the first experimental study upon the optical trap** and manipulation of topological insulator (TI) particles. By virtue of the unique TI properties, which have a conducting surface and an insulating bulk, the particles present a peculiar behaviour in the presence of a single laser beam optical tweezers: they oscillate in a plane perpendicular to the direction of the laser propagation, as a result of the competition between radiation pressure and gradient forces. In other words, TI particles behave as optically induced oscillators, allowing dynamical measurements with unprecedented simplicity and purely optical control. Actually, optical rheology of soft matter interfaces and biological membranes, as well as dynamical force measurements in macromolecules and biopolymers, may be quoted as feasible possibilities for the near future.
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Submitted 8 November, 2017; v1 submitted 13 March, 2017;
originally announced March 2017.
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Low-field microwave absorption and magnetoresistance in iron nanostructures grown by electrodeposition on n-type lightly-doped silicon substrates
Authors:
J. F. Felix,
L. C. Figueiredo,
J. B. S. Mendes,
P. C. Morais,
C. I. L. de Araujo
Abstract:
In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with…
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In this study we investigate magnetic properties, surface morphology and crystal structure in iron nanoclusters electrodeposited on lightly-doped (100) n-type silicon substrates. Our goal is to investigate the spin injection and detection in the Fe/Si lateral structures. The samples obtained under electric percolation were characterized by magnetoresistive and magnetic resonance measurements with cycling the swee** applied field in order to understand the spin dynamics in the as-produced samples. The observed hysteresis in the magnetic resonance spectra, plus the presence of a broad peak in the non-saturated regime confirming the low field microwave absorption (LFMA), were correlated to the peaks and slopes found in the magnetoresistance curves. The results suggest long range spin injection and detection in low resistive silicon and the magnetic resonance technique is herein introduced as a promising tool for analysis of electric contactless magnetoresistive samples.
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Submitted 9 April, 2015;
originally announced April 2015.
