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Effect of interdiffusion and quantum confinement on Raman spectra of the Ge/Si(100) heterostructures with quantum dots
Abstract: We used Raman scattering for study the phonon modes of self-organized Ge/Si quantum dots, grown by a molecular-beam epitaxy method. It is revealed, that Ge-Ge and Si-Ge vibrational modes considerably intensify at excitation of exciton between the {Lambda}3 valence and {Lanbda}1 conduction bands (transitions E1 and E1+{Delta}1), that allows to observe Raman scattering spectrum from extremely smal… ▽ More
Submitted 10 August, 2009; originally announced August 2009.
Comments: Reported at the 16th Int. Symp. "Nanostructures: Physics and Technology", Vladivostok, Russia, July 14-18, 2008
Journal ref: Proc. 16th Int. Symp. "Nanostructures: Physics and Technology", Vladivostok, Russia, July 14-18, 2008