Multi-junction surface ion trap for quantum computing
Authors:
J. D. Sterk,
M. G. Blain,
M. Delaney,
R. Haltli,
E. Heller,
A. L. Holterhoff,
T. Jennings,
N. Jimenez,
A. Kozhanov,
Z. Meinelt,
E. Ou,
J. Van Der Wall,
C. Noel,
D. Stick
Abstract:
Surface ion traps with two-dimensional layouts of trap** regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport,…
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Surface ion traps with two-dimensional layouts of trap** regions are natural architectures for storing large numbers of ions and supporting the connectivity needed to implement quantum algorithms. Many of the components and operations needed to fully exploit this architecture have already been demonstrated, including operation at cryogenic temperatures with low heating, low excitation transport, and ion control and detection with integrated photonics. Here we demonstrate a trap that addresses the scaling challenge of increasing power dissipation as the RF electrode increases in size. By raising the RF electrode and removing most of the insulating dielectric layer below it we reduce both ohmic and dielectric power dissipation. We also measure heating rates across a range of motional frequencies and for different voltage sources in a trap with a raised RF electrode but solid dielectric.
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Submitted 29 February, 2024;
originally announced March 2024.
