Showing 1–2 of 2 results for author: Mehrotra, S R

Atomistic approach to alloy scattering in $Si_{1-x}Ge_{x}$

Authors: Saumitra R Mehrotra, Abhijeet Paul, Gerhard Klimeck

Abstract: SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in SiGe. This approach puts the scattering model on a s… ▽ More SiGe alloy scattering is of significant importance with the introduction of strained layers and SiGe channels into CMOS technology. However, alloy scattering has till now been treated in an empirical fashion with a fitting parameter. We present a theoretical model within the atomistic tight-binding representation for treating alloy scattering in SiGe. This approach puts the scattering model on a solid atomistic footing with physical insights. The approach is shown to inherently capture the bulk alloy scattering potential parameters for both n-type and p-type carriers and matches experimental mobility data. △ Less

Submitted 1 March, 2011; v1 submitted 23 February, 2011; originally announced February 2011.

Comments: 3 pg 3 figures

Journal ref: Appl. Phys. Lett. 98, 173504 (2011)

Interface Trap Density Metrology of state-of-the-art undoped Si n-FinFETs

Authors: Giuseppe Carlo Tettamanzi, Abhijeet Paul, Sunhee Lee, Saumitra R. Mehrotra, Nadine Collaert, Serge Biesemans, Gerhard Klimeck, Sven Rogge

Abstract: The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of me… ▽ More The presence of interface states at the MOS interface is a well-known cause of device degradation. This is particularly true for ultra-scaled FinFET geometries where the presence of a few traps can strongly influence device behavior. Typical methods for interface trap density (Dit) measurements are not performed on ultimate devices, but on custom designed structures. We present the first set of methods that allow direct estimation of Dit in state-of-the-art FinFETs, addressing a critical industry need. △ Less

Submitted 11 November, 2010; originally announced November 2010.

Comments: 9 pages, 4 figures, *G.C.T. and A.P. contributed equally to this work