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Computation of the spatial distribution of charge-carrier density in disordered media
Authors:
Alexey V. Nenashev,
Florian Gebhard,
Klaus Meerholz,
Sergei D. Baranovskii
Abstract:
The space- and temperature-dependent electron distribution $n(r,T)$ determines optoelectronic properties of disordered semiconductors. It is a challenging task to get access to $n(r,T)$ in random potentials, avoiding the time-consuming numerical solution of the Schrödinger equation. We present several numerical techniques targeted to fulfill this task. For a degenerate system with Fermi statistics…
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The space- and temperature-dependent electron distribution $n(r,T)$ determines optoelectronic properties of disordered semiconductors. It is a challenging task to get access to $n(r,T)$ in random potentials, avoiding the time-consuming numerical solution of the Schrödinger equation. We present several numerical techniques targeted to fulfill this task. For a degenerate system with Fermi statistics, a numerical approach based on a matrix inversion and that based on a system of linear equations are developed. For a non-degenerate system with Boltzmann statistics, a numerical technique based on a universal low-pass filter and one based on random wave functions are introduced. The high accuracy of the approximate calculations are checked by comparison with the exact quantum-mechanical solutions.
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Submitted 20 December, 2023;
originally announced December 2023.
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Qubits, entangled states, and quantum gates realized on a set of classical pendulums
Authors:
Alexey V. Nenashev,
Florian Gebhard,
Klaus Meerholz,
Sergei D. Baranovskii
Abstract:
Here we show that the concepts behind such terms as entanglement, qubits, quantum gates, quantum error corrections, unitary time evolution etc., which are usually ascribed to quantum systems, can be adequately realized on a set of coupled classical pendulums.
Here we show that the concepts behind such terms as entanglement, qubits, quantum gates, quantum error corrections, unitary time evolution etc., which are usually ascribed to quantum systems, can be adequately realized on a set of coupled classical pendulums.
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Submitted 1 December, 2023;
originally announced December 2023.
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Parametrization of the Charge-Carrier Mobility in Organic Disordered Semiconductors. APAE against EGDM
Authors:
S. D. Baranovskii,
A. V. Nenashev,
D. Hertel,
K. Meerholz,
F. Gebhard
Abstract:
An appropriately parameterized compact analytical equation (APAE) is suggested to account for charge carrier mobility in organic disordered semiconductors (ODSs). This equation correctly reproduces the effects of temperature $T$, carrier concentration $n$, and electric field $F$ on the carrier mobility $μ(T,F,n)$, as evidenced by comparison with analytical theories and Monte Carlo simulations. The…
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An appropriately parameterized compact analytical equation (APAE) is suggested to account for charge carrier mobility in organic disordered semiconductors (ODSs). This equation correctly reproduces the effects of temperature $T$, carrier concentration $n$, and electric field $F$ on the carrier mobility $μ(T,F,n)$, as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at varience to those used in the so-called extended Gaussian disorder model (EGDM) approach, which is widely exploited in commercially distributed device--simulation algorithms. While EGDM is only valid for cubic lattices with a specific choice of parameters, APAE describes charge transport in systems with spatial disorder in a wide range of parameters. APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms.
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Submitted 9 November, 2023;
originally announced November 2023.
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Orientation distributions of vacuum-deposited organic emitters revealed by single-molecule microscopy
Authors:
Francisco Tenopala-Carmona,
Dirk Hertel,
Sabina Hillebrandt,
Andreas Mischok,
Arko Graf,
Klaus Meerholz,
Malte C. Gather
Abstract:
The orientation of luminescent molecules in organic light-emitting diodes (OLEDs) strongly influences device performance. However, our understanding of the factors controlling emitter orientation is limited as current measurements only provide ensemble-averaged orientation values. Here, we use single-molecule imaging to measure the transition dipole orientation of individual molecules in a state-o…
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The orientation of luminescent molecules in organic light-emitting diodes (OLEDs) strongly influences device performance. However, our understanding of the factors controlling emitter orientation is limited as current measurements only provide ensemble-averaged orientation values. Here, we use single-molecule imaging to measure the transition dipole orientation of individual molecules in a state-of-the-art thermally evaporated host and thereby obtain complete orientation distributions of the hyperfluorescence-terminal emitter C545T. We achieve this by realizing ultra-low do** concentrations (10-6 wt%) of C545T and minimising background levels to reliably measure the photoluminescence of the emitter. This approach yields the orientation distributions of >1000 individual emitter molecules in a system relevant to vacuum-processed OLEDs. Analysis of solution- and vacuum-processed systems reveals that the orientation distributions strongly depend on the nanoscale environment of the emitter. This work opens the door to attaining unprecedented information on the factors that determine emitter orientation in current and future material systems for OLEDs.
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Submitted 19 May, 2023;
originally announced May 2023.
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Quantum states in disordered media. II. Spatial charge carrier distribution
Authors:
A. V. Nenashev,
S. D. Baranovskii,
K. Meerholz,
F. Gebhard
Abstract:
The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf r,T)$ without solving the Schrödinger equation. First, we derive the density for non-degenerate electrons by applying the Hamiltonian recursively to random wav…
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The space- and temperature-dependent electron distribution $n(\mathbf r,T)$ is essential for the theoretical description of the opto-electronic properties of disordered semiconductors. We present two powerful techniques to access $n(\mathbf r,T)$ without solving the Schrödinger equation. First, we derive the density for non-degenerate electrons by applying the Hamiltonian recursively to random wave functions (RWF). Second, we obtain a temperature-dependent effective potential from the application of a universal low-pass filter (ULF) to the random potential acting on the charge carriers in disordered media. Thereby, the full quantum-mechanical problem is reduced to the quasi-classical description of $n(\mathbf r,T)$ in an effective potential. We numerically verify both approaches by comparison with the exact quantum-mechanical solution. Both approaches prove superior to the widely used localization landscape theory (LLT) when we compare our approximate results for the charge carrier density and mobility at elevated temperatures obtained by RWF, ULF, and LLT with those from the exact solution of the Schrödinger equation.
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Submitted 23 February, 2023; v1 submitted 1 December, 2022;
originally announced December 2022.
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Quantum states in disordered media. I. Low-pass filter approach
Authors:
F. Gebhard,
A. V. Nenashev,
K. Meerholz,
S. D. Baranovskii
Abstract:
The current burst in research activities on disordered semiconductors calls for the development of appropriate theoretical tools that reveal the features of electron states in random potentials while avoiding the time-consuming numerical solution of the Schrödinger equation. Among various approaches suggested so far, the low-pass filter approach of Halperin and Lax (HL) and the so-called localizat…
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The current burst in research activities on disordered semiconductors calls for the development of appropriate theoretical tools that reveal the features of electron states in random potentials while avoiding the time-consuming numerical solution of the Schrödinger equation. Among various approaches suggested so far, the low-pass filter approach of Halperin and Lax (HL) and the so-called localization landscape technique (LLT) have received most recognition in the community. We prove that the HL approach becomes equivalent to the LLT for the specific case of a Lorentzian filter when applied to the Schrödinger equation with a constant mass. Advantageously, the low-pass filter approach allows further optimization beyond the Lorentzian shape. We propose the global HL filter as optimal filter with only a single length scale, namely, the size of the localized wave packets. As an application, we design an optimized potential landscape for a (semi-)classical calculation of the number of strongly localized states that faithfully reproduce the exact solution for a random white-noise potential in one dimension.
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Submitted 23 February, 2023; v1 submitted 1 December, 2022;
originally announced December 2022.
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Comment on "Interplay of Structural and Optoelectronic Properties in Formamidinium Mixed Tin-Lead Triiodide Perovskites"
Authors:
S. D. Baranovskii,
P. Höhbusch,
A. V. Nenashev,
A. V. Dvurechenskii,
M. Gerhard,
M. Koch,
D. Hertel,
K. Meerholz,
F. Gebhard
Abstract:
Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 25$% and with $> 0.85$%. Since the largest effects of alloy disorder were expected for the 50:50 composition, it was concluded that the revealed disord…
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Studying optoelectronic properties in FAPb$_{1-x}$Sn$_x$I$_3$ perovskites as a function of the lead:tin content, Parrott et al. observed the broadest luminescence linewidth and the largest luminescence Stokes shift in mixed compositions with Sn $ < 25$% and with $> 0.85$%. Since the largest effects of alloy disorder were expected for the 50:50 composition, it was concluded that the revealed disorder effects might arise from extrinsic factors that can be eliminated upon further crystal growth optimization. This comment shows that the largest effects of alloy disorder for perfectly random fluctuations in FAPb$_{1-x}$Sn$_x$I$_3$ perovskite are, in fact, expected for $x < 0.25$ and for $x > 0.85$. Therefore, further crystal growth optimization is futile.
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Submitted 31 January, 2022;
originally announced January 2022.
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Absolute energy level positions in tin and lead based halide perovskites
Authors:
Shuxia Tao,
Ines Schmidt,
Geert Brocks,
Junke Jiang,
Ionut Tranca,
Klaus Meerholz,
Selina Olthof
Abstract:
Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variati…
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Metal-halide perovskites are promising materials for future optoelectronic applications. One intriguing property, important for many applications, is the tunability of the band gap via compositional engineering. While experimental reports on changes in absorption or photoluminescence show rather good agreement for wide variety of compounds, the physical origins of these changes, namely the variations in valence band and conduction band positions, are not well characterized. Knowledge of these band positions is of importance for optimizing the energy level alignment with charge extraction layers in optoelectronic devices. Here, we determine ionization energy and electron affinity values of all primary tin and lead based perovskites using photoelectron spectroscopy data, supported by first-principles calculations. Through analysis of the chemical bonding, we characterize the key energy levels and elucidate their trends via a tight-binding analysis. We demonstrate that energy level variations in perovskites are primarily determined by the relative positions of the atomic energy levels of metal cations and halide anions. Secondary changes in the perovskite energy levels result from the cation-anion interaction strength, which depends on the volume and structural distortions of the perovskite lattices. These results mark a significant step towards understanding the electronic structure of this material class and provides the basis for rational design rules regarding the energetics in perovskite optoelectronics.
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Submitted 18 February, 2019;
originally announced February 2019.
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Plasmonic enhancement of aligned semiconducting graphene nanoribbons
Authors:
M. Pfeiffer,
B. V. Senkovskiy,
D. Haberer,
F. R. Fischer,
F. Yang,
K. Meerholz,
Y. Ando,
A. Grüneis,
K. Lindfors
Abstract:
We couple photoluminescent semiconducting 7-atom wide armchair edge graphene nanoribbons to plasmonic nanoantenna arrays and demonstrate an enhancement of the photoluminescence and Raman scattering intensity of the nanoribbons by more than one order of magnitude. The increase in signal allows us to study Raman spectra with high signal-to-noise ratio. Using plasmonic enhancement we are able to dete…
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We couple photoluminescent semiconducting 7-atom wide armchair edge graphene nanoribbons to plasmonic nanoantenna arrays and demonstrate an enhancement of the photoluminescence and Raman scattering intensity of the nanoribbons by more than one order of magnitude. The increase in signal allows us to study Raman spectra with high signal-to-noise ratio. Using plasmonic enhancement we are able to detect the off-resonant Raman signals from the modified radial breathing-like mode (RBLM) due to physisorbed molecules, the 3rd order RBLM, and C-H vibrations. We find excellent agreement between data and simulations describing the spectral dependence of the enhancement and modifications of the polarization anisotropy. The strong field gradients in the optical near-field further allow us to probe the subwavelength coherence properties of the phonon modes in the nanoribbons. We theoretically model this considering a finite coherence length along the GNR direction. Our results allow estimating the coherence length in graphene nanoribbons.
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Submitted 21 December, 2017;
originally announced December 2017.
