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Dislocation content of grain boundary phase junctions and its relation to grain boundary excess properties
Authors:
T. Frolov,
D. L. Medlin,
M. Asta
Abstract:
We analyze the dislocation content of grain boundary (GB) phase junctions, i.e., line defects separating two different GB phases coexisting on the same GB plane. While regular GB disconnections have been characterized for a variety of interfaces, GB phase junctions formed by GBs with different structures and different numbers of excess atoms have not been previously studied. We apply a general Bur…
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We analyze the dislocation content of grain boundary (GB) phase junctions, i.e., line defects separating two different GB phases coexisting on the same GB plane. While regular GB disconnections have been characterized for a variety of interfaces, GB phase junctions formed by GBs with different structures and different numbers of excess atoms have not been previously studied. We apply a general Burgers circuit analysis to calculate the Burgers vectors b of junctions in two Σ5 Cu boundaries previously simulated with molecular dynamics. The Burgers vectors of these junctions cannot be described by the displacement shift complete (DSC) lattice alone. We show that, in general, the normal component of b is not equal to the difference in the GB excess volumes, but contains another contribution from the numbers of GB atoms per unit area ΔN required to transform one GB phase into another. In the boundaries studied, the latter component dominates and even changes the sign of b. We derive expressions for the normal and tangential components of b in terms of the DSC lattice vectors and the non-DSC part due to ΔN and additional GB excess properties, including excess volume and shears. These expressions provide a connection between GB phase transformations driven by the GB free energy difference and the motion of GB junctions under applied normal and shear stresses. The proposed analysis quantifies b and therefore makes it possible to calculate the elastic part of the energy of these defects, evaluate their contribution to the nucleation barrier during GB phase transformations, and treat elastic interactions with other defects.
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Submitted 16 January, 2021;
originally announced January 2021.
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The Karl G. Jansky Very Large Array Sky Survey (VLASS). Science case and survey design
Authors:
M. Lacy,
S. A. Baum,
C. J. Chandler,
S. Chatterjee,
T. E. Clarke,
S. Deustua,
J. English,
J. Farnes,
B. M. Gaensler,
N. Gugliucci,
G. Hallinan,
B. R. Kent,
A. Kimball,
C. J. Law,
T. J. W. Lazio,
J. Marvil,
S. A. Mao,
D. Medlin,
K. Mooley,
E. J. Murphy,
S. Myers,
R. Osten,
G. T. Richards,
E. Rosolowsky,
L. Rudnick
, et al. (53 additional authors not shown)
Abstract:
The Very Large Array Sky Survey (VLASS) is a synoptic, all-sky radio sky survey with a unique combination of high angular resolution ($\approx$2.5"), sensitivity (a 1$σ$ goal of 70 $μ$Jy/beam in the coadded data), full linear Stokes polarimetry, time domain coverage, and wide bandwidth (2-4 GHz). The first observations began in September 2017, and observing for the survey will finish in 2024. VLAS…
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The Very Large Array Sky Survey (VLASS) is a synoptic, all-sky radio sky survey with a unique combination of high angular resolution ($\approx$2.5"), sensitivity (a 1$σ$ goal of 70 $μ$Jy/beam in the coadded data), full linear Stokes polarimetry, time domain coverage, and wide bandwidth (2-4 GHz). The first observations began in September 2017, and observing for the survey will finish in 2024. VLASS will use approximately 5500 hours of time on the Karl G. Jansky Very Large Array (VLA) to cover the whole sky visible to the VLA (Declination $>-40^{\circ}$), a total of 33,885 deg$^2$. The data will be taken in three epochs to allow the discovery of variable and transient radio sources. The survey is designed to engage radio astronomy experts, multi-wavelength astronomers, and citizen scientists alike. By utilizing an "on the fly" interferometry mode, the observing overheads are much reduced compared to a conventional pointed survey. In this paper, we present the science case and observational strategy for the survey, and also results from early survey observations.
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Submitted 30 December, 2019; v1 submitted 3 July, 2019;
originally announced July 2019.
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Unraveling the dislocation core structure at a van der Waals gap in bismuth telluride
Authors:
D. L. Medlin,
N. Yang,
C. D. Spataru,
L. M. Hale,
Y. Mishin
Abstract:
Tetradymite-structured chalcogenides such as bismuth telluride Bi_{2}Te_{3} are of significant interest for thermoelectric energy conversion and as topological insulators. Dislocations play a critical role during synthesis and processing of such materials and can strongly affect their functional properties. The dislocations between quintuple layers present special interest since their core structu…
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Tetradymite-structured chalcogenides such as bismuth telluride Bi_{2}Te_{3} are of significant interest for thermoelectric energy conversion and as topological insulators. Dislocations play a critical role during synthesis and processing of such materials and can strongly affect their functional properties. The dislocations between quintuple layers present special interest since their core structure is controlled by the van der Waals interactions between the layers. In this work, using atomic-resolution electron microscopy, we resolve the basal dislocation core structure in Bi_{2}Te_{3}, quantifying the disregistry of the atomic planes across the core. We show that, despite the existence of a stable stacking fault in the basal plane gamma surface, the dislocation core spreading is mainly due to the weak bonding between the layers, which leads to a small energy penalty for layer sliding parallel to the van der Waals gap. Calculations within a semidiscrete variational Peierls-Nabarro model informed by first-principles calculations support our experimental findings.
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Submitted 23 April, 2019; v1 submitted 25 February, 2019;
originally announced February 2019.
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π and 4π Josephson Effects Mediated by a Dirac Semimetal
Authors:
Wenlong Yu,
Wei Pan,
Douglas L. Medlin,
Mark A. Rodriguez,
Stephen R Lee,
Zhi-qiang Bao,
Fan Zhang
Abstract:
Cd3As2 is a three-dimensional topological Dirac semimetal with connected Fermi-arc surface states. It has been suggested that topological superconductivity can be achieved in the nontrivial surface states of topological materials by utilizing the superconductor proximity effect. Here we report observations of both π and 4π periodic supercurrents in aluminum-Cd3As2-aluminum Josephson junctions. The…
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Cd3As2 is a three-dimensional topological Dirac semimetal with connected Fermi-arc surface states. It has been suggested that topological superconductivity can be achieved in the nontrivial surface states of topological materials by utilizing the superconductor proximity effect. Here we report observations of both π and 4π periodic supercurrents in aluminum-Cd3As2-aluminum Josephson junctions. The π period is manifested by both the magnetic-field dependence of the critical supercurrent and the appearance of half-integer Shapiro steps in the a.c. Josephson effect. Our macroscopic theory suggests that the π period arises from interference between the induced bulk superconductivity and the induced Fermi arc surface superconductivity. The 4π period is manifested by the missing first Shapiro steps and is expected for topological superconductivity.
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Submitted 12 January, 2018;
originally announced January 2018.
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High Efficiency Thin Film Superlattice Thermoelectric Cooler Modules Enabled by Low Resistivity Contacts
Authors:
Yu** He,
François Léonard,
Douglas L. Medlin,
Nicholas Baldasaro,
Dorota S. Temple,
Philip Barletta,
Catalin D. Spataru
Abstract:
V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-tellurid…
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V-telluride superlattice thin films have shown promising performance for on-chip cooling devices. Recent experimental studies have indicated that device performance is limited by the metal/semiconductor electrical contacts. One challenge in realizing a low resistivity contacts is the absence of fundamental knowledge of the physical and chemical properties of interfaces between metal and V-telluride materials. Here we present a combination of experimental and theoretical efforts to understand, design and harness low resistivity contacts to V-tellurides. Ab initio calculations are used to explore the effects of interfacial structure and chemical compositions on the electrical contacts, and an ab initio based macroscopic model is employed to predict the fundamental limit of contact resistivity as a function of both carrier concentration and temperature. Under the guidance of theoretical studies, we develop an experimental approach to fabricate low resistivity metal contacts to V-telluride thin film superlattices, achieving a 100-fold reduction compared to previous work. Interfacial characterization and analysis using both scanning transmission electron microscopy and energy-dispersive x-ray spectroscopy show the unusual interfacial morphology and the potential for further improvement in contact resistivity. Finally, we harness the improved contacts to realize an improved high-performance thermoelectric cooling module.
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Submitted 22 November, 2017;
originally announced November 2017.
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Strong Photothermoelectric Response and Contact Reactivity of the Dirac Semimetal ZrTe5
Authors:
François Léonard,
Wenlong Yu,
Kimberlee C. Collins,
Douglas L. Medlin,
Joshua D. Sugar,
A. Alec Talin,
Wei Pan
Abstract:
The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectri…
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The family of three-dimensional topological insulators opens new avenues to discover novel photophysics and to develop novel types of photodetectors. ZrTe5 has been shown to be a Dirac semimetal possessing unique topological electronic and optical properties. Here we present spatially-resolved photocurrent measurements on devices made of nanoplatelets of ZrTe5, demonstrating the photothermoelectric origin of the photoresponse. Due to the high electrical conductivity and good Seebeck coefficient, we obtain noise-equivalent powers as low as 42 pW/Hz1/2 at room temperature for visible light illumination at zero bias. We also show that these devices suffer from significant ambient reactivity such as the formation of a Te-rich surface region driven by Zr oxidation, as well as severe reactions with the metal contacts. This reactivity results in significant stresses in the devices, leading to unusual geometries that are useful for gaining insight into the photocurrent mechanisms. Our results indicate that both the large photothermoelectric response and reactivity must be considered when designing or interpreting photocurrent measurements in these systems.
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Submitted 23 October, 2017;
originally announced October 2017.
