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Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides
Authors:
Shoaib Khalid,
Anderson Janotti,
Bharat Medasani
Abstract:
Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the ro…
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Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS$_2$ flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy.
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Submitted 23 February, 2024;
originally announced February 2024.
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Large Rashba splittings in bulk and monolayer of BiAs
Authors:
Muhammad Zubair,
Igor Evangelista,
Shoaib Khalid,
Bharat Medasani,
Anderson Janotti
Abstract:
Two-dimensional materials with Rashba split bands near the Fermi level are key to develo** upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here, we propose BiAs as a novel layered semiconductor with large Rashba splitting in bulk and monolayer forms. Using first-principles calculations, we determined the…
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Two-dimensional materials with Rashba split bands near the Fermi level are key to develo** upcoming next-generation spintronics. They enable generating, detecting, and manipulating spin currents without an external magnetic field. Here, we propose BiAs as a novel layered semiconductor with large Rashba splitting in bulk and monolayer forms. Using first-principles calculations, we determined the lowest energy structure of BiAs and its basic electronic properties. Bulk BiAs has a layered crystal structure with two atoms in a rhombohedral primitive cell, similar to the parent Bi and As elemental phases. It is a semiconductor with a narrow and indirect band gap. The spin-orbit coupling leads to Rashba-Dresselhaus spin splitting and characteristic spin texture around the L-point in the Brillouin zone of the hexagonal conventional unit cell, with Rashba energy and Rashba coupling constant for valence (conduction) band of $E_R$= 137 meV (93 meV) and $α_R$= 6.05 eVÅ~(4.6 eVÅ). In monolayer form (i.e., composed of a BiAs bilayer), BiAs has a much larger and direct band gap at $Γ$, with a circular spin texture characteristic of a pure Rashba effect. The Rashba energy $E_R$= 18 meV and Rashba coupling constant $α_R$= 1.67 eVÅ of monolayer BiAs are quite large compared to other known 2D materials, and these values are shown to increase under tensile biaxial strain.
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Submitted 18 October, 2023;
originally announced October 2023.
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The deep-acceptor nature of the chalcogen vacancies in 2D transition-metal dichalcogenides
Authors:
Shoaib Khalid,
Bharat Medasani,
John L. Lyons,
Darshana Wickramaratne,
Anderson Janotti
Abstract:
Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies…
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Chalcogen vacancies in the semiconducting monolayer transition-metal dichalcogenides (TMDs) have frequently been invoked to explain a wide range of phenomena, including both unintentional p-type and n-type conductivity, as well as sub-band gap defect levels measured via tunneling or optical spectroscopy. These conflicting interpretations of the deep versus shallow nature of the chalcogen vacancies are due in part to shortcomings in prior first-principles calculations of defects in the semiconducting two-dimensional (2D) TMDs that have been used to explain experimental observations. Here we report results of hybrid density functional calculations for the chalcogen vacancy in a series of monolayer TMDs, correctly referencing the thermodynamic charge transition levels to the fundamental band gap (as opposed to the optical band gap). We find that the chalcogen vacancies are deep acceptors and cannot lead to n-type or p-type conductivity. Both the (0/$-1$) and ($-$1/$-$2) transition levels occur in the gap, leading to paramagnetic charge states S=1/2 and S=1, respectively, in a collinear-spin representation. We discuss trends in terms of the band alignments between the TMDs, which can serve as a guide to future experimental studies of vacancy behavior.
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Submitted 25 September, 2023;
originally announced September 2023.
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Stellarator optimization for good magnetic surfaces at the same time as quasisymmetry
Authors:
Matt Landreman,
Bharat Medasani,
Caoxiang Zhu
Abstract:
A method is demonstrated to optimize a stellarator's geometry to eliminate magnetic islands and achieve other desired physics properties at the same time. For many physics quantities that have been used in stellarator optimization, including quasisymmetry, neoclassical transport, and magnetohydrodynamic stability, it is convenient to use a magnetic equilibrium representation that assures the exist…
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A method is demonstrated to optimize a stellarator's geometry to eliminate magnetic islands and achieve other desired physics properties at the same time. For many physics quantities that have been used in stellarator optimization, including quasisymmetry, neoclassical transport, and magnetohydrodynamic stability, it is convenient to use a magnetic equilibrium representation that assures the existence of magnetic surfaces. However, this representation hides the possible presence of magnetic islands, which are typically undesirable. To include both surface-based objectives and island widths in a single optimization, two fixed-boundary equilibrium calculations are run at each iteration of the optimization: one that enforces the existence of magnetic surfaces (VMEC [S. P. Hirshman and J. C. Whitson, Phys. Fluids 26, 3553 (1983)]), and one that does not (SPEC [S. R. Hudson, et al, Phys. Plasmas 19, 112502 (2012)]). By penalizing the island residues in the objective function, the two magnetic field representations are brought into agreement during the optimization. An example is presented in which, particularly on the surface where quasisymmetry was targeted, quasisymmetry is achieved more accurately than in previously published examples.
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Submitted 28 June, 2021;
originally announced June 2021.
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Predicting band gaps and band-edge positions of oxide perovskites using DFT and machine learning
Authors:
Wei Li,
Zigeng Wang,
Xia Xiao,
Zhiqiang Zhang,
Anderson Janotti,
Rajasekaran Sanguthevar,
Bharat Medasani
Abstract:
Density functional theory within the local or semilocal density approximations (DFT-LDA/GGA) has become a workhorse in electronic structure theory of solids, being extremely fast and reliable for energetics and structural properties, yet remaining highly inaccurate for predicting band gaps of semiconductors and insulators. Accurate prediction of band gaps using firstprinciples methods is time cons…
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Density functional theory within the local or semilocal density approximations (DFT-LDA/GGA) has become a workhorse in electronic structure theory of solids, being extremely fast and reliable for energetics and structural properties, yet remaining highly inaccurate for predicting band gaps of semiconductors and insulators. Accurate prediction of band gaps using firstprinciples methods is time consuming, requiring hybrid functionals, quasi-particle GW, or quantum Monte Carlo methods. Efficiently correcting DFT-LDA/GGA band gaps and unveiling the main chemical and structural factors involved in this correction is desirable for discovering novel materials in high-throughput calculations. In this direction, we use DFT and machine learning techniques to correct band gaps and band-edge positions of a representative subset of ABO3 perovskite oxides. Relying on results of HSE06 hybrid functional calculations as target values of band gaps, we find a systematic band gap correction of ~1.5 eV for this class of materials, where ~1 eV comes from downward shifting the valence band and ~0.5 eV from uplifting the conduction band. The main chemical and structural factors determining the band gap correction are determined through a feature selection procedure.
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Submitted 11 October, 2022; v1 submitted 27 August, 2020;
originally announced August 2020.
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Temperature Dependence of Self-diffusion in Cr2O3 from First Principles
Authors:
Bharat Medasani,
Maria L. Sushko,
Kevin M. Rosso,
Daniel K. Schreiber,
Stephen M. Bruemmer
Abstract:
Understanding and predicting the dominant diffusion processes in Cr2O3 is essential to its optimization for anti-corrosion coatings, spintronics, and other applications. Despite significant theoretical effort in modeling defect mediated diffusion in Cr2O3 the correlation with experimentally measured diffusivities remains poor partly due to the insufficient accuracy of the theoretical approaches. H…
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Understanding and predicting the dominant diffusion processes in Cr2O3 is essential to its optimization for anti-corrosion coatings, spintronics, and other applications. Despite significant theoretical effort in modeling defect mediated diffusion in Cr2O3 the correlation with experimentally measured diffusivities remains poor partly due to the insufficient accuracy of the theoretical approaches. Here an attempt to resolve these discrepancies is made through high accuracy density functional theory simulations coupled with grand canonical formalism of defect thermochemistry. In this approach, point defect formation energies were computed using hybrid exchange correlation functional. This level of theory proved to be essential for achieving the agreement with experimental self-diffusion coefficients. The analysis of the resulting self-diffusion coefficients indicate that chromium has higher mobility at low temperatures and high oxygen partial pressures, in particular at standard temperature and pressure conditions. At high vacuum, high temperature conditions, oxygen diffusion becomes dominant. At Cr/Cr2O3 interfaces O vacancies were found to be more mobile than Cr vacancies at all temperatures. Cr diffuses preferentially along the c-axis at low temperatures but switches to basal plane at higher temperatures. O diffusion is primarily bound to basal plane at all temperatures.
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Submitted 9 April, 2019;
originally announced April 2019.
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A First Principles Investigation of Native Interstitial Diffusion in Cr2O3
Authors:
Bharat Medasani,
Maria L. Sushko,
Kevin M. Rosso,
Daniel K. Schreiber,
Stephen M. Bruemmer
Abstract:
First principles density functional theory (DFT) investigation of native interstitials and the associated self-diffusion mechanisms in α-Cr2O3 reveals that interstitials are more mobile than vacancies of corresponding species. Cr interstitials occupy the unoccupied Cr sublattice sites that are octahedrally coordinated by 6 O atoms, and O interstitials form a dumbbell configuration orientated along…
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First principles density functional theory (DFT) investigation of native interstitials and the associated self-diffusion mechanisms in α-Cr2O3 reveals that interstitials are more mobile than vacancies of corresponding species. Cr interstitials occupy the unoccupied Cr sublattice sites that are octahedrally coordinated by 6 O atoms, and O interstitials form a dumbbell configuration orientated along the [221] direction (diagonal) of the corundum lattice. Calculations predict that neutral O interstitials are predominant in O-rich conditions and Cr interstitials in +2 and +1 charge states are the dominant interstitial defects in Cr-rich conditions. Similar to that of the vacancies, the charge transition levels of both O and Cr interstitials are located deep within the bandgap. Transport calculations reveal a rich variety of interstitial diffusion mechanisms that are species, charge, and orientation dependent. Cr interstitials diffuse preferably along the diagonal of corundum lattice in a two step process via an intermediate defect complex comprising a Cr interstitial and an adjacent Cr Frenkel defect in the neighboring Cr bilayer. This mechanism is similar to that of the vacancy mediated Cr diffusion along the c-axis with intermediate Cr vacancy and Cr Frenkel defect combination. In contrast, O interstitials diffuse via bond switching mechanism. O interstitials in -1 and -2 charge states have very high mobility compared to neutral O interstitials.
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Submitted 10 May, 2018; v1 submitted 9 May, 2018;
originally announced May 2018.
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PyCDT: A Python toolkit for modeling point defects in semiconductors and insulators
Authors:
Danny Broberg,
Bharat Medasani,
Nils Zimmermann,
Andrew Canning,
Maciej Haranczyk,
Mark Asta,
Geoffroy Hautier
Abstract:
Point defects have a strong impact on the performance of semiconductor and insulator materials used in technological applications, spanning microelectronics to energy conversion and storage. The nature of the dominant defect types, how they vary with processing conditions, and their impact on materials properties are central aspects that determine the performance of a material in a certain applica…
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Point defects have a strong impact on the performance of semiconductor and insulator materials used in technological applications, spanning microelectronics to energy conversion and storage. The nature of the dominant defect types, how they vary with processing conditions, and their impact on materials properties are central aspects that determine the performance of a material in a certain application. This information is, however, difficult to access directly from experimental measurements. Consequently, computational methods, based on electronic density functional theory (DFT), have found widespread use in the calculation of point-defect properties. Here we have developed the Python Charged Defect Toolkit (PyCDT) to expedite the setup and post-processing of defect calculations with widely used DFT software. PyCDT has a user-friendly command-line interface and provides a direct interface with the Materials Project database. This allows for setting up many charged defect calculations for any material of interest, as well as post-processing and applying state-of-the-art electrostatic correction terms. Our paper serves as a documentation for PyCDT, and demonstrates its use in an application to the well-studied GaAs compound semiconductor. We anticipate that the PyCDT code will be useful as a framework for undertaking readily reproducible calculations of charged point-defect properties, and that it will provide a foundation for automated, high-throughput calculations.
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Submitted 6 June, 2017; v1 submitted 22 November, 2016;
originally announced November 2016.
