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Experimental demonstration of a Two-Dimensional Hole Gas (2DHG) in a GaN/AlGaN/GaN based heterostructure by optical spectroscopy
Authors:
Loïc Méchin,
François Médard,
Joël Leymarie,
Sophie Bouchoule,
Jean-Yves Duboz,
Blandine Alloing,
Jesús Zuñiga-Pérez,
Pierre Disseix
Abstract:
The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional ho…
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The polarization discontinuity across interfaces in polar nitride-based heterostructures can lead to the formation of two-dimensional electron and hole gases. In the past, the observation of these electron and hole gases has been achieved through various experimental techniques, most often by electronic measurements but occasionally by optical means. However, the occurrence of a two-dimensional hole gas has never been demonstrated optically. The objective of this article is to demonstrate, thanks to the combination of various optical spectroscopy techniques coupled to numerical simulations, the presence of a two-dimensional hole gas in a GaN/AlGaN/GaN heterostructure. This is made possible thanks to a GaN/AlGaN/GaN heterostructure displaying a micrometer-thick AlGaN layer and a GaN cap thicker than in conventional GaN-based HEMTs structures. The band structure across the whole heterostructure was established by solving self-consistently the Schrödinger and Poisson equations and by taking into account the experimentally determined strain state of each layer. Continuous and quasi-continuos photoluminescence reveal the presence of a broad emission band at an energy around 50 meV below the exciton emission and whose energy blueshifts with increasing excitation power density, until it is completely quenched due to the complete screening of the internal electric field. Time-resolved measurements show that the emission arising from the two-dimensional hole gas can be assigned to the recombination of holes in the potential well with electrons located in the top GaN as well as electron from the bottom AlGaN, each of them displaying different decay times due to unequal electric fields. Besides the optical demonstration of a two-dimensional hole gas in a nitride-based heterostructure, our work highlights the optical recombination processes involved in the emission from such a hole gas.
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Submitted 20 December, 2023;
originally announced December 2023.
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Lasing in a ZnO waveguide: clear evidence of polaritonic gain obtained by monitoring the continuous exciton screening
Authors:
Geoffrey Kreyder,
Léa Hermet,
Pierre Disseix,
François Médard,
Martine Mihailovic,
François Réveret,
Sophie Bouchoule,
Christiane Deparis,
Jesús Zuñiga-Pérez,
Joël Leymarie
Abstract:
The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a m…
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The stimulated emission of exciton-polaritons was proposed as a means of lowering the lasing threshold because it does not require the dissociation of excitons to obtain an electron-hole plasma, as in a classical semiconductor laser based on population inversion. In this work we propose a method to prove unambiguously the polaritonic nature of lasing by combining experimental measurements with a model accounting for the permittivity change as a function of the carrier density. To do so we use angle resolved photoluminescence to observe the lasing at cryogenic temperature from a polariton mode in a zinc oxide waveguide structure, and to monitor the continuous shift of the polaritonic dispersion towards a photonic dispersion as the optical intensity of the pump is increased (up to 20 times the one at threshold). This shift is reproduced thanks to a model taking into account the reduction of the oscillator strength and the renormalization of the bandgap due to the screening of the electrostatic interaction between electrons and holes. Furthermore, the measurement of the carriers lifetime at optical intensities in the order of those at which the polariton lasing occurs enables us to estimate the carrier density, confirming it is lower than the corresponding Mott density for zinc oxide reported in the literature.
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Submitted 20 March, 2023; v1 submitted 15 December, 2022;
originally announced December 2022.
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Orbital and dynamical analysis of the system around HR 8799. New astrometric epochs from VLT/SPHERE and LBT/LUCI
Authors:
A. Zurlo,
K. Gozdziewski,
C. Lazzoni D. Mesa,
P. Nogueira,
S. Desidera,
R. Gratton,
F. Marzari,
E. Pinna,
G. Chauvin,
P. Delorme,
J. H. Girard,
J. Hagelberg,
Th. Henning,
M. Janson,
E. Rickman,
P. Kervella,
H. Avenhaus,
T. Bhowmik,
B. Biller,
A. Boccaletti,
M. Bonaglia,
M. Bonavita,
M. Bonnefoy,
F. Cantalloube,
A. Cheetham
, et al. (22 additional authors not shown)
Abstract:
HR\,8799 is a young planetary system composed of 4 planets and a double debris belt. Being the first multi-planetary system discovered with the direct imaging technique, it has been observed extensively since 1998. This wide baseline of astrometric measurements, counting over 50 observations in 20 years, permits a detailed orbital and dynamical analysis of the system. To explore the orbital parame…
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HR\,8799 is a young planetary system composed of 4 planets and a double debris belt. Being the first multi-planetary system discovered with the direct imaging technique, it has been observed extensively since 1998. This wide baseline of astrometric measurements, counting over 50 observations in 20 years, permits a detailed orbital and dynamical analysis of the system. To explore the orbital parameters of the planets, their dynamical history, and the planet-to-disk interaction, we made follow-up observations of the system during the VLT/SPHERE GTO program. We obtained 21 observations, most of them in favorable conditions. In addition, we observed HR\,8799 with the instrument LBT/LUCI. All the observations were reduced with state-of-the-art algorithms implemented to apply the spectral and angular differential imaging method. We re-reduced the SPHERE data obtained during the commissioning of the instrument and in 3 open-time programs to have homogeneous astrometry. The precise position of the 4 planets with respect to the host star was calculated by exploiting the fake negative companions method. To improve the orbital fitting, we also took into account all of the astrometric data available in the literature. From the photometric measurements obtained in different wavelengths, we estimated the planets' masses following the evolutionary models. We obtained updated parameters for the orbits with the assumption of coplanarity, relatively small eccentricities, and periods very close to the 2:1 resonance. We also refined the dynamical mass of each planet and the parallax of the system (24.49 $\pm$ 0.07 mas). We also conducted detailed $N$-body simulations indicating possible positions of a~putative fifth innermost planet with a mass below the present detection limits of $\simeq 3$~\MJup.
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Submitted 21 July, 2022;
originally announced July 2022.
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Strong coupling of exciton-polaritons in a bulk GaN planar waveguide: quantifiying the coupling strength
Authors:
C. Brimont,
L. Doyennette,
G. Kreyder,
F. Réveret,
P. Disseix,
F. Médard,
J. Leymarie,
E. Cambril,
S. Bouchoule,
M. Gromovyi,
B. Alloing,
S. Rennesson,
F. Semond,
J. Zúñiga-Pérez,
T. Guillet
Abstract:
We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons a…
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We investigate the demonstration and quantification of the strong coupling between excitons and guided photons in a GaN slab waveguide. The dispersions of waveguide polaritons are measured from T=6~K to 300~K through gratings. They are carefully analyzed within four models based on different assumptions, in order to assess the strong coupling regime. We prove that the guided photons and excitons are strongly coupled at all investigated temperatures, with a small $(11 \%)$ dependence on the temperature. However the values of the Rabi splitting strongly vary among the four models: the "coupled oscillator" model over-estimates the coupling; the analytical "Elliott-Tanguy" model precisely describes the dielectric susceptibility of GaN near the excitonic transition, leading to a Rabi splitting equal to $82 \pm 10 \ meV$ for TE0 modes; the experimental ellipsometry-based model leads to smaller values of $55 \pm 6 \ meV.$ We evidence that for waveguides including active layers with large oscillator strengths, as required for room-temperature polaritonic devices, a strong bending of the modes dispersion is not necessarily the signature of the strong-coupling, which requires for its reliable assessment a precise analysis of the material dielectric susceptibility.
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Submitted 4 November, 2020; v1 submitted 12 February, 2020;
originally announced February 2020.
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Edge-emitting polariton laser and amplifier based on a ZnO waveguide
Authors:
O. Jamadi,
F. Reveret,
P. Disseix,
F. Medard,
J. Leymarie,
A. Moreau,
D. Solnyshkov,
C. Deparis,
M. Leroux,
E. Cambril,
S. Bouchoule,
J. Zuniga-Perez,
G. Malpuech
Abstract:
We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of ra…
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We demonstrate edge-emitting exciton-polariton (polariton) lasing from 5 to 300 K and amplification of non-radiative guided polariton modes within ZnO waveguides. The mode dispersion below and above the lasing threshold is directly measured using gratings present on top of the sample, fully demonstrating the polaritonic nature of the lasing modes. The threshold is found to be similar to that of radiative polarions in planar ZnO microcavities. These results open broad perspectives for guided polaritonics by allowing an easier and more straightforward implementation of polariton integrated circuits exploiting fast propagating polaritons.
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Submitted 26 January, 2018; v1 submitted 1 August, 2017;
originally announced August 2017.
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Polariton condensation phase diagram in wide bandgap planar microcavities: GaN versus ZnO
Authors:
O. Jamadi,
F. Réveret,
E. Mallet,
P. Disseix,
F. Médard,
M. Mihailovic,
D. Solnyshkov,
G. Malpuech,
J. Leymarie,
S. Bouchoule,
X. Lafosse,
F. Li,
M. Leroux,
F. Semond,
J. Zuniga-Perez
Abstract:
GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental c…
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GaN and ZnO microcavities have been grown on patterned silicon substrate. Thanks to a common platform these microcavities share similar photonic properties with large quality factors and low photonic disorder which gives the possibility to determine the optimal spot diameter and to realize a complete comparative phase diagram study. Both systems have been investigated under the same experimental condition. Experimental results are well reproduced by simulation using Boltzmann equations. Lower polariton lasing threshold has been measured at low temperature in the ZnO microcavity as expected due to a larger Rabi splitting. However the threshold is strongly impacted by LO phonons through phonon-assisted polariton relaxation. We observe and discuss this effect as a function of temperature and detuning. Finally the polariton lasing threshold at room temperature is quite similar in both microcavities. This study highlights polariton relaxation mechanism and their importance for threshold optimization.
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Submitted 18 December, 2015;
originally announced December 2015.
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Long range correlations in a 97% excitonic one-dimensional polariton condensate
Authors:
Aurélien Trichet,
Emilien Durupt,
François Médard,
Sanjoy Datta,
Anna Minguzzi,
Maxime Richard
Abstract:
We report on the realization of an out-of-equilibrium polariton condensate under pulsed excitation in a one-dimensional geometry. We observe macroscopic occupation of a polaritonic mode with only 3% photonic fraction, and a nature strikingly close to that of a bare exciton condensate. With the help of this tiny photonic fraction, the condensate is found to display first-order coherence over distan…
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We report on the realization of an out-of-equilibrium polariton condensate under pulsed excitation in a one-dimensional geometry. We observe macroscopic occupation of a polaritonic mode with only 3% photonic fraction, and a nature strikingly close to that of a bare exciton condensate. With the help of this tiny photonic fraction, the condensate is found to display first-order coherence over distances as large as 10 microns. Based on a driven-dissipative mean field model, we find that the correlations length is limited by the effects of a shallow disorder under non-equilibrium conditions.
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Submitted 8 March, 2013;
originally announced March 2013.
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LO-phonon assisted polariton lasing in a ZnO based microcavity
Authors:
L. Orosz,
F. Réveret,
F. Médard,
P. Disseix,
J. Leymarie,
M. Mihailovic,
D. Solnyshkov,
G. Malpuech,
J. Zuniga-Pérez,
F. Semond,
M. Leroux,
S. Bouchoule,
X. Lafosse,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in…
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Polariton relaxation mechanisms are analysed experimentally and theoretically in a ZnO-based polariton laser. A minimum lasing threshold is obtained when the energy difference between the exciton reservoir and the bottom of the lower polariton branch is resonant with the LO phonon energy. Tuning off this resonance increases the threshold, and exciton-exciton scattering processes become involved in the polariton relaxation. These observations are qualitatively reproduced by simulations based on the numerical solution of the semi-classical Boltzmann equations.
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Submitted 30 November, 2011;
originally announced December 2011.
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From Strong to Weak Coupling Regime in a Single GaN Microwire up to Room Temperature
Authors:
A. Trichet,
F. Médard,
J. Zuniga-Perez,
B. Alloing,
M. Richard
Abstract:
Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanos…
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Large bandgap semiconductor microwires constitute a very advantageous alternative to planar microcavities in the context of room temperature strong coupling regime between exciton and light. In this work we demonstrate that in a GaN microwire, the strong coupling regime is achieved up to room temperature with a large Rabi splitting of 125 meV never achieved before in a Nitride-based photonic nanostructure. The demonstration relies on a method which doesn't require any knowledge á priori on the photonic eigenmodes energy in the microwire, i.e. the details of the microwire cross-section shape. Moreover, using a heavily doped segment within the same microwire, we confirm experimentally that free excitons provide the oscillator strength for this strong coupling regime. The measured Rabi splitting to linewidth ratio of 15 matches state of the art planar Nitride-based microcavities, in spite of a much simpler design and a less demanding fabrication process. These results show that GaN microwires constitute a simpler and promising system to achieve electrically pumped lasing in the strong coupling regime.
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Submitted 8 March, 2012; v1 submitted 28 June, 2011;
originally announced June 2011.
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Laser emission with excitonic gain in a ZnO planar microcavity
Authors:
Thierry Guillet,
Christelle Brimont,
Pierre Valvin,
Bernard Gil,
Thierry Bretagnon,
F. Medard,
Martine Mihailovic,
Jesús Zúñiga-Pérez,
Mathieu Leroux,
F. Semond,
Sophie Bouchoule
Abstract:
The lasing operation of a ZnO planar microcavity under optical pum** is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical…
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The lasing operation of a ZnO planar microcavity under optical pum** is demonstrated from T=80 K to 300 K. At the laser threshold, the cavity switches from the strong coupling to the weak coupling regime. A gain-related transition, which appears while still observing polariton branches and, thus, with stable excitons, is observed below 240K. This shows that exciton scattering processes, typical of II-VI semiconductors, are involved in the gain process.
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Submitted 1 June, 2011;
originally announced June 2011.
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Fabrication and Optical Properties of a Fully Hybrid Epitaxial ZnO-Based Microcavity in the Strong Coupling Regime
Authors:
L. Orosz,
F. Réveret,
S. Bouchoule,
J. Zúñiga-Pérez,
F. Médard,
J. Leymarie,
P. Disseix,
M. Mihailovic,
E. Frayssinet,
F. Semond,
M. Leroux,
M. Mexis,
C. Brimont,
T. Guillet
Abstract:
In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demon…
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In order to achieve polariton lasing at room temperature, a new fabrication methodology for planar microcavities is proposed: a ZnO-based microcavity in which the active region is epitaxially grown on an AlGaN/AlN/Si substrate and in which two dielectric mirrors are used. This approach allows as to simultaneously obtain a high-quality active layer together with a high photonic confinement as demonstrated through macro-, and micro-photoluminescence (μ-PL) and reflectivity experiments. A quality factor of 675 and a maximum PL emission at k=0 are evidenced thanks to μ-PL, revealing an efficient polaritonic relaxation even at low excitation power.
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Submitted 13 June, 2011; v1 submitted 4 May, 2011;
originally announced May 2011.
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Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature
Authors:
Stéphane Faure,
Christelle Brimont,
Thierry Guillet,
T. Bretagnon,
B. Gil,
François Médard,
D. Lagarde,
Pierre Disseix,
Joel Leymarie,
Jesús Zúñiga-Pérez,
Mathieu Leroux,
Eric Frayssinet,
Jean-Christophe Moreno,
Fabrice Semond,
Sophie Bouchoule
Abstract:
The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode po…
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The strong coupling regime in a ZnO microcavity is investigated through room temperature photoluminescence and reflectivity experiments. The simultaneous strong coupling of excitons to the cavity mode and the first Bragg mode is demonstrated at room temperature. The polariton relaxation is followed as a function of the excitation density. A relaxation bottleneck is evidenced in the Bragg-mode polariton branch. It is partly broken under strong excitation density, so that the emission from this branch dominates the one from cavity-mode polaritons.
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Submitted 25 September, 2009; v1 submitted 27 May, 2009;
originally announced May 2009.
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Experimental observation of strong light-matter coupling in ZnO microcavities: influence of large excitonic absorption
Authors:
François Médard,
Jesús Zúñiga-Pérez,
Pierre Disseix,
Martine Mihailovic,
Joel Leymarie,
A. Vasson,
Fabrice Semond,
Eric Frayssinet,
Jean-Christophe Moreno,
Mathieu Leroux,
Stéphane Faure,
Thierry Guillet
Abstract:
We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulk-like behavior to be obse…
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We present experimental observation of the strong light-matter coupling regime in ZnO bulk microcavities grown on silicon. Angle resolved reflectivity measurements, corroborated by transfer-matrix simulations, show that Rabi splittings in the order of 70 meV are achieved even for low finesse cavities. The impact of the large excitonic absorption, which enables a ZnO bulk-like behavior to be observed even in the strong coupling regime, is illustrated both experimentally and theoretically by considering cavities with increasing thickness.
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Submitted 17 December, 2008;
originally announced December 2008.