-
Enhancement-mode buried strained silicon channel quantum dot with tunable lateral geometry
Authors:
T. M. Lu,
N. C. Bishop,
T. Pluym,
J. Means,
P. G. Kotula,
J. Cederberg,
L. A. Tracy,
J. Dominguez,
M. P. Lilly,
M. S. Carroll
Abstract:
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same…
▽ More
We propose and demonstrate a relaxed-SiGe/strained-Si (SiGe/s-Si) enhancement-mode gate stack for quantum dots. The enhancement-mode SiGe/s-Si structure is pursued because it spaces the quantum dot away from charge and spin defect rich dielectric interfaces and minimizes background dopants. A mobility of 1.6\times10^5 cm^2/Vs at 5.8\times10^{11}/cm^2 is measured in Hall bars that witness the same device process flow as the quantum dot. Periodic Coulomb blockade (CB) is measured in a double-top-gated lateral quantum dot nanostructure. The CB terminates with open diamonds up to \pm 10 mV of DC voltage across the device. The devices were fabricated within a 150 mm Si foundry setting that uses implanted ohmics and chemical-vapor-deposited dielectrics, in contrast to previously demonstrated enhancement-mode SiGe/s-Si structures made with AuSb alloyed ohmics and atomic-layer-deposited dielectric. A modified implant, polysilicon formation and annealing conditions were utilized to minimize the thermal budget so that the buried s-Si layer would not be washed out by Ge/Si interdiffusion.
△ Less
Submitted 1 June, 2011;
originally announced June 2011.
-
Interactions Between Mn_12-ac and Thin Gold Films: Using Mn_12-ac as Scattering Centers
Authors:
Joel Means,
Winfried Teizer
Abstract:
We explore the electronic interactions between a thin gold film and a surface layer of the molecular magnet Mn_12-acetate. Magnetoresistance measurements of the gold allow characterization of the interactions by comparison with the theoretical predictions of weak localization. We find that the presence of Mn_12-acetate on the surface of the gold film leads to a reduction in elastic scattering wh…
▽ More
We explore the electronic interactions between a thin gold film and a surface layer of the molecular magnet Mn_12-acetate. Magnetoresistance measurements of the gold allow characterization of the interactions by comparison with the theoretical predictions of weak localization. We find that the presence of Mn_12-acetate on the surface of the gold film leads to a reduction in elastic scattering while increasing the spin scattering of the conduction electrons. This is the first experimental evidence of molecular magnets being used as scattering centers for an adjacent metallic film.
△ Less
Submitted 11 October, 2008;
originally announced October 2008.
-
Films of Mn12-acetate deposited by low-energy laser ablation
Authors:
J. Means,
V. Meenakshi,
R. V. A. Srivastava,
W. Teizer,
Al. A. Kolomenskii,
H. A. Schuessler,
H. Zhao,
K. R. Dunbar
Abstract:
Thin films of the molecular magnet Mn12-acetate, [Mn12 O12(CH3COO)16 (H2O)4] 2CH3COOH 4H2O, have been prepared using a laser ablation technique with a nitrogen laser at low laser energies of 0.8 and 2 mJ. Chemical and magnetic characterizations show that the Mn12-acetate cores remain intact and the films show similar magnetic properties to those of the parent molecular starting material. In addi…
▽ More
Thin films of the molecular magnet Mn12-acetate, [Mn12 O12(CH3COO)16 (H2O)4] 2CH3COOH 4H2O, have been prepared using a laser ablation technique with a nitrogen laser at low laser energies of 0.8 and 2 mJ. Chemical and magnetic characterizations show that the Mn12-acetate cores remain intact and the films show similar magnetic properties to those of the parent molecular starting material. In addition, the magnetic data exhibit a peak in the magnetization at 27 K indicating the creation of an additional magnetic phase not noted in previous studies of crystalline phases.
△ Less
Submitted 3 September, 2004;
originally announced September 2004.
-
Mn12-acetate film pattern generated by photolithography methods
Authors:
K. Kim,
D. M. Seo,
J. Means,
V. Meenakshi,
W. Teizer,
H. Zhao,
K. R. Dunbar
Abstract:
We demonstrate a straightforward way to lithographically fabricate Mn12-acetate (Mn12O12(CH3COO)16(H2O)4 2CH3COOH 4H2O) thin film patterns on Si/SiO2 surfaces, a significant step in light of the chemical volatility of this organic complex. Atomic force microscopy (AFM) images of the film patterns allow the determination of the pattern dimensions. X-ray photoelectron spectroscopy (XPS) data indic…
▽ More
We demonstrate a straightforward way to lithographically fabricate Mn12-acetate (Mn12O12(CH3COO)16(H2O)4 2CH3COOH 4H2O) thin film patterns on Si/SiO2 surfaces, a significant step in light of the chemical volatility of this organic complex. Atomic force microscopy (AFM) images of the film patterns allow the determination of the pattern dimensions. X-ray photoelectron spectroscopy (XPS) data indicate that the patterned material is the intact Mn12-acetate complex. Magnetic measurements of the Mn12-acetate film confirm that the film properties are reminiscent of crystalline Mn12-acetate, suggesting that this approach can be used to fabricate lithographically patterned devices of Mn12-acetate.
△ Less
Submitted 2 September, 2004;
originally announced September 2004.
