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Efficient Photonic Integration of Diamond Color Centers and Thin-Film Lithium Niobate
Authors:
Daniel Riedel,
Hope Lee,
Jason F. Herrmann,
Jakob Grzesik,
Vahid Ansari,
Jean-Michel Borit,
Hubert S. Stokowski,
Shahriar Aghaeimeibodi,
Haiyu Lu,
Patrick J. McQuade,
Nick A. Melosh,
Zhi-Xun Shen,
Amir H. Safavi-Naeini,
Jelena Vučković
Abstract:
On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a…
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On-chip photonic quantum circuits with integrated quantum memories have the potential to radically progress hardware for quantum information processing. In particular, negatively charged group-IV color centers in diamond are promising candidates for quantum memories, as they combine long storage times with excellent optical emission properties and an optically-addressable spin state. However, as a material, diamond lacks many functionalities needed to realize scalable quantum systems. Thin-film lithium niobate (TFLN), in contrast, offers a number of useful photonic nonlinearities, including the electro-optic effect, piezoelectricity, and capabilities for periodically-poled quasi-phase matching. Here, we present highly efficient heterogeneous integration of diamond nanobeams containing negatively charged silicon-vacancy (SiV) centers with TFLN waveguides. We observe greater than 90\% transmission efficiency between the diamond nanobeam and TFLN waveguide on average across multiple measurements. By comparing saturation signal levels between confocal and integrated collection, we determine a $10$-fold increase in photon counts channeled into TFLN waveguides versus that into out-of-plane collection channels. Our results constitute a key step for creating scalable integrated quantum photonic circuits that leverage the advantages of both diamond and TFLN materials.
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Submitted 27 June, 2023;
originally announced June 2023.
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A Quantum Photonic Interface for Tin-Vacancy Centers in Diamond
Authors:
Alison E. Rugar,
Shahriar Aghaeimeibodi,
Daniel Riedel,
Constantin Dory,
Haiyu Lu,
Patrick J. McQuade,
Zhi-Xun Shen,
Nicholas A. Melosh,
Jelena Vučković
Abstract:
The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular intere…
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The realization of quantum networks critically depends on establishing efficient, coherent light-matter interfaces. Optically active spins in diamond have emerged as promising quantum nodes based on their spin-selective optical transitions, long-lived spin ground states, and potential for integration with nanophotonics. Tin-vacancy (SnV$^{\,\textrm{-}}$) centers in diamond are of particular interest because they exhibit narrow-linewidth emission in nanostructures and possess long spin coherence times at temperatures above 1 K. However, a nanophotonic interface for SnV$^{\,\textrm{-}}$ centers has not yet been realized. Here, we report cavity enhancement of the emission of SnV$^{\,\textrm{-}}$ centers in diamond. We integrate SnV$^{\,\textrm{-}}$ centers into one-dimensional photonic crystal resonators and observe a 40-fold increase in emission intensity. The Purcell factor of the coupled system is 25, resulting in channeling of the majority of photons ($90\%$) into the cavity mode. Our results pave the way for the creation of efficient, scalable spin-photon interfaces based on SnV$^{\,\textrm{-}}$ centers in diamond.
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Submitted 23 February, 2021;
originally announced February 2021.
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Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth
Authors:
Alison E. Rugar,
Haiyu Lu,
Constantin Dory,
Shuo Sun,
Patrick J. McQuade,
Zhi-Xun Shen,
Nicholas A. Melosh,
Jelena Vučković
Abstract:
Group-IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. Future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group-IV impurity atoms, which are…
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Group-IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. Future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group-IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV$^-$) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV$^-$ centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.
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Submitted 19 February, 2020; v1 submitted 30 October, 2019;
originally announced October 2019.
