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Ultrathin Magnesium-based Coating as an Efficient Oxygen Barrier for Superconducting Circuit Materials
Authors:
Chenyu Zhou,
Junsik Mun,
Juntao Yao,
Aswin kumar Anbalagan,
Mohammad D. Hossain,
Russell A. McLellan,
Ruoshui Li,
Kim Kisslinger,
Gengnan Li,
Xiao Tong,
Ashley R. Head,
Conan Weiland,
Steven L. Hulbert,
Andrew L. Walter,
Qiang Li,
Yimei Zhu,
Peter V. Sushko,
Mingzhao Liu
Abstract:
Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately…
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Scaling up superconducting quantum circuits based on transmon qubits necessitates substantial enhancements in qubit coherence time. Among the materials considered for transmon qubits, tantalum (Ta) has emerged as a promising candidate, surpassing conventional counterparts in terms of coherence time. However, the presence of an amorphous surface Ta oxide layer introduces dielectric loss, ultimately placing a limit on the coherence time. In this study, we present a novel approach for suppressing the formation of tantalum oxide using an ultrathin magnesium (Mg) cap** layer deposited on top of tantalum. Synchrotron-based X-ray photoelectron spectroscopy (XPS) studies demonstrate that oxide is confined to an extremely thin region directly beneath the Mg/Ta interface. Additionally, we demonstrate that the superconducting properties of thin Ta films are improved following the Mg cap**, exhibiting sharper and higher-temperature transitions to superconductive and magnetically ordered states. Based on the experimental data and computational modeling, we establish an atomic-scale mechanistic understanding of the role of the cap** layer in protecting Ta from oxidation. This work provides valuable insights into the formation mechanism and functionality of surface tantalum oxide, as well as a new materials design principle with the potential to reduce dielectric loss in superconducting quantum materials. Ultimately, our findings pave the way for the realization of large-scale, high-performance quantum computing systems.
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Submitted 25 September, 2023; v1 submitted 21 September, 2023;
originally announced September 2023.
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Disentangling Losses in Tantalum Superconducting Circuits
Authors:
Kevin D. Crowley,
Russell A. McLellan,
Aveek Dutta,
Nana Shumiya,
Alexander P. M. Place,
Xuan Hoang Le,
Youqi Gang,
Trisha Madhavan,
Nishaad Khedkar,
Yiming Cady Feng,
Esha A. Umbarkar,
Xin Gui,
Lila V. H. Rodgers,
Yichen Jia,
Mayer M. Feldman,
Stephen A. Lyon,
Mingzhao Liu,
Robert J. Cava,
Andrew A. Houck,
Nathalie P. de Leon
Abstract:
Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss th…
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Superconducting qubits are a leading system for realizing large scale quantum processors, but overall gate fidelities suffer from coherence times limited by microwave dielectric loss. Recently discovered tantalum-based qubits exhibit record lifetimes exceeding 0.3 ms. Here we perform systematic, detailed measurements of superconducting tantalum resonators in order to disentangle sources of loss that limit state-of-the-art tantalum devices. By studying the dependence of loss on temperature, microwave photon number, and device geometry, we quantify materials-related losses and observe that the losses are dominated by several types of saturable two level systems (TLSs), with evidence that both surface and bulk related TLSs contribute to loss. Moreover, we show that surface TLSs can be altered with chemical processing. With four different surface conditions, we quantitatively extract the linear absorption associated with different surface TLS sources. Finally, we quantify the impact of the chemical processing at single photon powers, the relevant conditions for qubit device performance. In this regime we measure resonators with internal quality factors ranging from 5 to 15 x 10^6, comparable to the best qubits reported. In these devices the surface and bulk TLS contributions to loss are comparable, showing that systematic improvements in materials on both fronts will be necessary to improve qubit coherence further.
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Submitted 18 January, 2023;
originally announced January 2023.
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Chemical profiles of the oxides on tantalum in state of the art superconducting circuits
Authors:
Russell A. McLellan,
Aveek Dutta,
Chenyu Zhou,
Yichen Jia,
Conan Weiland,
Xin Gui,
Alexander P. M. Place,
Kevin D. Crowley,
Xuan Hoang Le,
Trisha Madhavan,
Youqi Gang,
Lukas Baker,
Ashley R. Head,
Iradwikanari Waluyo,
Ruoshui Li,
Kim Kisslinger,
Adrian Hunt,
Ignace Jarrige,
Stephen A. Lyon,
Andi M. Barbour,
Robert J. Cava,
Andrew A. Houck,
Steven L. Hulbert,
Mingzhao Liu,
Andrew L. Walter
, et al. (1 additional authors not shown)
Abstract:
Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently…
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Over the past decades, superconducting qubits have emerged as one of the leading hardware platforms for realizing a quantum processor. Consequently, researchers have made significant effort to understand the loss channels that limit the coherence times of superconducting qubits. A major source of loss has been attributed to two level systems that are present at the material interfaces. We recently showed that replacing the metal in the capacitor of a transmon with tantalum yields record relaxation and coherence times for superconducting qubits, motivating a detailed study of the tantalum surface. In this work, we study the chemical profile of the surface of tantalum films grown on c-plane sapphire using variable energy X-ray photoelectron spectroscopy (VEXPS). We identify the different oxidation states of tantalum that are present in the native oxide resulting from exposure to air, and we measure their distribution through the depth of the film. Furthermore, we show how the volume and depth distribution of these tantalum oxidation states can be altered by various chemical treatments. By correlating these measurements with detailed measurements of quantum devices, we can improve our understanding of the microscopic device losses.
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Submitted 20 January, 2023; v1 submitted 11 January, 2023;
originally announced January 2023.