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In-plane staging in lithium-ion intercalation of bilayer graphene
Authors:
Thomas Astles,
James G. McHugh,
Rui Zhang,
Qian Guo,
Madeleine Howe,
Zefei Wu,
Kornelia Indykiewicz,
Alex Summerfield,
Zachary A. H. Goodwin,
Sergey Slizovskiy,
Daniil Domaretskiy,
Andre K. Geim,
Vladimir Falko,
Irina V. Grigorieva
Abstract:
The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene. Unexpecte…
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The ongoing efforts to optimize Li-ion batteries led to the interest in intercalation of nanoscale layered compounds, including bilayer graphene. Its lithium intercalation has been demonstrated recently but the mechanisms underpinning the storage capacity remain poorly understood. Here, using magnetotransport measurements, we report in-operando intercalation dynamics of bilayer graphene. Unexpectedly, we find four distinct intercalation stages that correspond to well-defined Li-ion densities. We refer to these stages as 'in-plane', with no in-plane analogues in bulk graphite. The fully intercalated bilayers represent a stoichiometric compound C14LiC14 with a Li density of 2.7x10^{14} cm^{-2}, notably lower than fully intercalated graphite. Combining the experimental findings and DFT calculations, we show that the critical step in bilayer intercalation is a transition from AB to AA stacking which occurs at a density of 0.9x10^{14} cm^{-2}. Our findings reveal the mechanism and limits for electrochemical intercalation of bilayer graphene and suggest possible avenues for increasing the Li storage capacity.
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Submitted 10 July, 2024;
originally announced July 2024.
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Two-dimensional electrons at mirror and twistronic twin boundaries in van der Waals ferroelectrics
Authors:
James G. McHugh,
Xue Li,
Isaac Soltero,
Vladimir I. Fal'ko
Abstract:
Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adj…
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Semiconducting transition metal dichalcogenides (MX$_2$) occur in 2H and rhombohedral (3R) polytypes, respectively distinguished by anti-parallel and parallel orientation of consecutive monolayer lattices. In its bulk form, 3R-MX$_2$ is ferroelectric, hosting an out-of-plane electric polarisation, the direction of which is dictated by stacking. Here, we predict that twin boundaries, separating adjacent polarization domains with reversed built-in electric fields, are able to host two-dimensional electrons and holes with an areal density reaching $\sim 10^{13} {\rm cm}^{-2}$. Our modelling suggests that n-doped twin boundaries have a more promising binding energy than p-doped ones, whereas hole accumulation is stable at external surfaces of a twinned film. We also propose that assembling pairs of mono-twin films with a `magic' twist angle $θ^*$ that provides commensurability between the moiré pattern at the interface and the accumulated carrier density, should promote a regime of strongly correlated states of electrons, such as Wigner crystals, and we specify the values of $θ^*$ for homo- and heterostructures of various TMDs.
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Submitted 28 June, 2024; v1 submitted 23 May, 2024;
originally announced May 2024.
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Competition of moiré network sites to form electronic quantum dots in reconstructed MoX${}_2$/WX${}_2$ heterostructures
Authors:
Isaac Soltero,
Mikhail A. Kaliteevski,
James G. McHugh,
Vladimir V. Enaldiev,
Vladimir I. Fal'ko
Abstract:
Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining t…
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Twisted bilayers of two-dimensional semiconductors offer a versatile platform to engineer quantum states for charge carriers using moiré superlattice effects. Among the systems of recent interest are twistronic MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ heterostructures, which undergo reconstruction into preferential stacking domains and highly strained domain wall networks, determining the electron/hole localization across moiré superlattices. Here, we present a catalogue of options for the formation of self-organized quantum dots and wires in lattice-reconstructed marginally twisted MoSe${}_{2}$/WSe${}_{2}$ and MoS${}_{2}$/WS${}_{2}$ bilayers, fine tuned by the twist angle between the monolayers from perfect alignment to $θ\sim 1^{\circ}$, and by choosing parallel or anti-parallel orientation of their unit cells. The proposed scenarios of the quantum dots and wires formation are found using multi-scale modelling that takes into account the features of strain textures caused by twirling of domain wall networks.
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Submitted 29 November, 2023;
originally announced November 2023.
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Chiral Majorana hinge modes on a curved surface with magnetic impurities
Authors:
Ilyoun Na,
James G. McHugh,
Sinéad M. Griffin,
Luca Chirolli
Abstract:
Chiral Majorana one-dimensional modes have been proposed as they key component for topological quantum computing. In this study, we explore their potential realization as hinge modes in higher-order topological superconductors. To create such phases, we engineer a sign-changing, time-reversal symmetry-breaking mass term through an ensemble of magnetic impurities on the surface of a sphere. The mag…
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Chiral Majorana one-dimensional modes have been proposed as they key component for topological quantum computing. In this study, we explore their potential realization as hinge modes in higher-order topological superconductors. To create such phases, we engineer a sign-changing, time-reversal symmetry-breaking mass term through an ensemble of magnetic impurities on the surface of a sphere. The magnetization of this ensemble arises from the competition between the external magnetic field and the Ruderman-Kittel-Kasuya-Yosida (RKKY) interaction among the impurities, mediated by the surface Majorana modes. We determine the magnetic phase diagram and identify the optimal magnetic field to minimize orbital effects and induce a sign changing mass term. This term opens a gap in the surface spectrum, resulting in a gapless one-dimensional chiral Majorana mode along the nodal line of the mass term, thereby implementing a second-order topological superconductor.
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Submitted 13 October, 2023;
originally announced October 2023.
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Moiré Superstructures in Marginally-Twisted NbSe$_2$ Bilayers
Authors:
J. G. McHugh,
V. V. Enaldiev,
V. I. Fal'ko
Abstract:
The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment…
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The creation of moiré superlattices in twisted bilayers of two-dimensional crystals has been utilised to engineer quantum material properties in graphene and transition metal dichalcogenide (TMD) semiconductors. Here, we examine the structural relaxation and electronic properties in small-angle twisted bilayers of metallic NbSe$_2$. Reconstruction appears to be particularly strong for misalignment angles $θ_P$ < 2.9$^o$ and $θ_{AP}$ < 1.2$^o$ for parallel (P) and antiparallel (AP) orientation of monolayers' unit cells, respectively. Multiscale modelling reveals the formation of domains and domain walls with distinct stacking, for which density functional theory (DFT) calculations are used to map the shape of the bilayer Fermi surface and the relative phase of the CDW order in adjacent layers. We find a significant modulation of interlayer coupling across the moiré superstructure and the existence of preferred interlayer orientations of the CDW phase, necessitating the nucleation of CDW discommensurations at superlattice domain walls.
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Submitted 9 October, 2023; v1 submitted 13 December, 2022;
originally announced December 2022.
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Self-organised quantum dots in marginally twisted MoSe$_2$/WSe$_2$ and MoS$_2$/WS$_2$ bilayers
Authors:
V. V. Enaldiev,
F. Ferreira,
J. G. McHugh,
V. I. Fal'ko
Abstract:
Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-I…
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Moiré superlattices in twistronic heterostructures are a powerful tool for materials engineering. In marginally twisted (small misalignment angle, $θ$) bilayers of nearly lattice-matched two-dimensional (2D) crystals moiré patterns take the form of domains of commensurate stacking, separated by a network of domain walls (NoDW) with strain hot spots at the NoDW nodes. Here, we show that, for type-II transition metal dichalcogenide bilayers MoX$_2$/WX$_2$ (X=S, Se), the hydrostatic strain component in these hot spots creates quantum dots for electrons and holes. We investigate the electron/hole states bound by such objects, discussing their manifestations via the intralayer intraband infrared transitions. The electron/hole confinement, which is strongest for $θ<0.5^{\circ}$, leads to a red-shift of their recombination line producing single photon emitters (SPE) broadly tuneable around 1\,eV by misalignment angle. These self-organised dots can form in bilayers with both aligned and inverted MoX$_2$ and WX$_2$ unit cells, emitting photons with different polarizations. We also find that the hot spots of strain reduce the intralayer MoX$_2$ A-exciton energy, enabling selective population of the quantum dot states.
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Submitted 24 October, 2022; v1 submitted 14 April, 2022;
originally announced April 2022.
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Stacking-Mediated Diffusion of Ruthenium Nanoclusters in Graphite
Authors:
James G. McHugh,
Pavlos Mouratidis,
Kenny Jolley
Abstract:
The diffusion, penetration and intercalation of metallic atomic dopants is an important question for various graphite applications in engineering and nanotechnology. We have performed systematic first-principles calculations of the behaviour of ruthenium nanoclusters on a graphene monolayer and intercalated into a bilayer. Our computational results show that at a sufficiently high density of singl…
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The diffusion, penetration and intercalation of metallic atomic dopants is an important question for various graphite applications in engineering and nanotechnology. We have performed systematic first-principles calculations of the behaviour of ruthenium nanoclusters on a graphene monolayer and intercalated into a bilayer. Our computational results show that at a sufficiently high density of single Ru atom interstitials, intercalated atoms can shear the surrounding lattice to an AA stacking configuration, an effect which weakens with increasing cluster size. Moreover, the interlayer stacking configuration, in turn, has a significant effect on cluster diffusion. We therefore find different trends in diffusivity as a function of cluster size and interlayer stacking. For monolayer graphene and an AA graphene bilayer, the formation of small clusters generally lowers diffusion barriers, while the opposite behaviour is found for the preferred AB stacking configuration. These results demonstrate that conditions of local impurity concentration and interlayer disregistry are able to regulate the diffusivity of metallic impurities in graphite.
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Submitted 15 April, 2022; v1 submitted 30 March, 2022;
originally announced March 2022.
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Prismatic Edge Dislocations in Graphite
Authors:
James G. McHugh,
Pavlos Mouratidis,
Anthony Impellizzeri,
Kenny Jolley,
Dogan Erbahar,
Chris P. Ewels
Abstract:
Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic dislocations, of which prismatic dislocations have been relatively less studied. Using density functional theory (DFT) calculations, we have examined different pri…
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Dislocations are a central concept in materials science, which dictate the plastic deformation and damage evolution in materials. Layered materials such as graphite admit two general types of interlayer dislocations: basal and prismatic dislocations, of which prismatic dislocations have been relatively less studied. Using density functional theory (DFT) calculations, we have examined different prismatic core structures in graphite and evaluated their structure, energetics and mobility. We find close energetic interplay between bonded and "free-standing" core structures in both zigzag and armchair directions, with a reconstructed stable zigzag core identified. We explore grain boundaries and prismatic dislocation pile-up, identifying metastable structures which may be important in energy storage. The role of interlayer stacking in core structure, dislocation glide and climb is also considered in-depth. Our calculations suggest that the prismatic dislocation core is stable up to high temperatures of approximately 1500K in bulk graphite. Above this temperature, the breaking of bonds in the dislocation core can facilitate climb, grain-boundary motion, and the annealing of damage through prismatic dislocation glide.
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Submitted 22 October, 2021;
originally announced October 2021.
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Anisotropic Frictional Response of Texture Induced Strained Graphene
Authors:
Andrea Mescola,
Guido Paolicelli,
Roberto Guarino,
James G. McHugh,
Sean P. Ogilvie,
Alberto Rota,
Enrico Gnecco,
Erica Iacob,
Sergio Valeri,
Nicola M. Pugno,
Venkata Gadhamshetty,
Muhammad M. Rahman,
Pulickel M. Ajayan,
Alan B. Dalton,
Manoj Tripathi
Abstract:
Friction-induced energy dissipation impedes the performance of nanoscale devices during their relative motion. Nevertheless, an ingeniously designed structure which utilizes graphene top** can tune the friction force signal by inducing local strain. The present work reports cap** of graphene over Si grooved surfaces of different pitch lengths from sub-nanoscale (P=40 nm) to a quarter of a micr…
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Friction-induced energy dissipation impedes the performance of nanoscale devices during their relative motion. Nevertheless, an ingeniously designed structure which utilizes graphene top** can tune the friction force signal by inducing local strain. The present work reports cap** of graphene over Si grooved surfaces of different pitch lengths from sub-nanoscale (P=40 nm) to a quarter of a micron (P= 250 nm). The variation in the pitch lengths induces different strains in graphene revealed by scanning probe techniques, Raman spectroscopy and molecular dynamics (MD) simulation. The asymmetric straining of C-C bonds over the groove architecture is exploited through friction force microscopy in different directions of orthogonal and parallel to groove axis. The presence of graphene lubricates the textured surface by a factor of 10 and periodically dissipated friction force, which was found to be stochastic over the bare surface. For the first time, we presented transformation of the lubrication into an ultra-low friction force by a factor of 20 over the crest scanning parallel to the groove axis. Such anisotropy is found to be insignificant at the bare textured system, clearly demonstrating the strain-dependent regulation of friction force. Our results are applicable for graphene, and other 2D materials covered corrugated structures with movable components such as NEMS, nanoscale gears and robotics.
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Submitted 7 May, 2021;
originally announced May 2021.
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Ripplocations in Layered Materials: Sublinear Scaling and Basal Climb
Authors:
James G. McHugh,
Pavlos Mouratidis,
Kenny Jolley
Abstract:
The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in single and multiple van der Waals layers, using analytical and computational techniques. Expressions for the energetic and structural scaling factors of surface ripp…
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The ripplocation is a crystallographic defect which is unique to layered materials, combining nanoscale delamination with the crystallographic slip of a basal dislocation. Here, we have studied basal dislocations and ripplocations, in single and multiple van der Waals layers, using analytical and computational techniques. Expressions for the energetic and structural scaling factors of surface ripplocations are derived, which are in close correspondence to the physics of a classical carpet ruck. Our simulations demonstrate that the lowest-energy structure of dislocation pile-ups in layered materials is the ripplocation, while large dislocation pile-ups in bulk graphite demonstrate multilayer delamination, curvature and voids. This can provide a concise explanation for the large volumetric expansion seen in irradiated graphite.
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Submitted 24 March, 2021; v1 submitted 14 December, 2020;
originally announced December 2020.
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Superparamagnetic Relaxation Driven by Colored Noise
Authors:
James G McHugh,
Roy W Chantrell,
Ivo Klik,
Ching-Ray Chang
Abstract:
A theoretical investigation of magnetic relaxation processes in single domain particles driven by colored noise is presented. Two approaches are considered; the Landau-Lifshitz-Miyazaki-Seki equation, which is a Langevin dynamics model based on the introduction of an Ornstein-Uhlenbeck correlated noise into the Landau-Lifshitz-Gilbert equation and a Generalized Master Equation approach whereby the…
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A theoretical investigation of magnetic relaxation processes in single domain particles driven by colored noise is presented. Two approaches are considered; the Landau-Lifshitz-Miyazaki-Seki equation, which is a Langevin dynamics model based on the introduction of an Ornstein-Uhlenbeck correlated noise into the Landau-Lifshitz-Gilbert equation and a Generalized Master Equation approach whereby the ordinary Master Equation is modified through the introduction of an explicit memory kernel. It is found that colored noise is likely to become important for high anisotropy materials where the characteristic system time, in this case the inverse Larmor precession frequency, becomes comparable to the correlation time. When the escape time is much longer than the correlation time, the relaxation profile of the spin has a similar exponential form to the ordinary LLG equation, while for low barrier heights and intermediate dam**, for which the correlation time is a sizable fraction of the escape time, an unusual bi-exponential decay is predicted as a characteristic of colored noise. At very high dam** and correlation times, the time profile of the spins exhibits a more complicated, noisy trajectory.
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Submitted 7 May, 2018; v1 submitted 4 May, 2018;
originally announced May 2018.
