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Controllable suppression of the unconventional superconductivity in bulk and thin-film Sr$_{2}$RuO$_{4}$ via high-energy electron irradiation
Authors:
Jacob P. Ruf,
Hilary M. L. Noad,
Romain Grasset,
Ludi Miao,
Elina Zhakina,
Philippa H. McGuinness,
Hari P. Nair,
Nathaniel J. Schreiber,
Naoki Kikugawa,
Dmitry Sokolov,
Marcin Konczykowski,
Darrell G. Schlom,
Kyle M. Shen,
Andrew P. Mackenzie
Abstract:
In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples…
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In bulk Sr$_{2}$RuO$_{4}$, the strong sensitivity of the superconducting transition temperature $T_{\text{c}}$ to nonmagnetic impurities provides robust evidence for a superconducting order parameter that changes sign around the Fermi surface. In superconducting epitaxial thin-film Sr$_{2}$RuO$_{4}$, the relationship between $T_{\text{c}}$ and the residual resistivity $ρ_0$, which in bulk samples is taken to be a proxy for the low-temperature elastic scattering rate, is far less clear. Using high-energy electron irradiation to controllably introduce point disorder into bulk single-crystal and thin-film Sr$_{2}$RuO$_{4}$, we show that $T_{\text{c}}$ is suppressed in both systems at nearly identical rates. This suggests that part of $ρ_0$ in films comes from defects that do not contribute to superconducting pairbreaking, and establishes a quantitative link between the superconductivity of bulk and thin-film samples.
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Submitted 29 February, 2024;
originally announced February 2024.
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A spatially resolved optical method to measure thermal diffusivity
Authors:
F. Sun,
S. Mishra,
P. H. McGuinness,
Z. H. Filipiak,
I. Markovic,
D. A. Sokolov,
N. Kikugawa,
J. W. Orenstein,
S. A. Hartnoll,
A. P. Mackenzie,
V. Sunko
Abstract:
We describe an optical method to directly measure position-dependent thermal diffusivity of reflective single crystal samples across a broad range of temperatures for condensed matter physics research. Two laser beams are used, one as a source to locally modulate the sample temperature, and the other as a probe of sample reflectivity, which is a function of the modulated temperature. Thermal diffu…
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We describe an optical method to directly measure position-dependent thermal diffusivity of reflective single crystal samples across a broad range of temperatures for condensed matter physics research. Two laser beams are used, one as a source to locally modulate the sample temperature, and the other as a probe of sample reflectivity, which is a function of the modulated temperature. Thermal diffusivity is obtained from the phase delay between source and probe signals. We combine this technique with a microscope setup in an optical cryostat, in which the sample is placed on a 3-axis piezo-stage, allowing for spatially resolved measurements. Furthermore, we demonstrate experimentally and mathematically that isotropic in-plane diffusivity can be obtained when overlap** the two laser beams instead of separating them in the traditional way, which further enhances the spatial resolution to a micron scale, especially valuable when studying inhomogeneous or multidomain samples. We discuss in detail the experimental conditions under which this technique is valuable, and demonstrate its performance on two stoichiometric bilayer ruthenates: Sr3Ru2O7 and Ca3Ru2O7. The spatial resolution allowed us to study the diffusivity in single domains of the latter, and we uncovered a temperature-dependent in-plane diffusivity anisotropy. Finally, we used the enhanced spatial resolution enabled by overlap** the two beams to measure temperature-dependent diffusivity of Ti-doped Ca3Ru2O7, which exhibits a metal-insulator transition. We observed large variations of transition temperature over the same sample, originating from do** inhomogeneity, and pointing to the power of spatially resolved techniques in accessing inherent properties.
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Submitted 3 March, 2023;
originally announced March 2023.
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Investigation of Planckian behavior in a high-conductivity oxide: PdCrO$_2$
Authors:
Elina Zhakina,
Ramzy Daou,
Antoine Maignan,
Philippa H. McGuinness,
Markus König,
Helge Rosner,
Seo-** Kim,
Seunghyun Khim,
Romain Grasset,
Marcin Konczykowski,
Evyatar Tulipman,
Juan Felipe Mendez-Valderrama,
Debanjan Chowdhury,
Erez Berg,
Andrew P. Mackenzie
Abstract:
The layered delafossite metal PdCrO$_2$ is a natural heterostructure of highly conductive Pd layers Kondo coupled to localized spins in the adjacent Mott insulating CrO$_2$ layers. At high temperatures $T$ it has a $T$-linear resistivity which is not seen in the isostructural but non-magnetic PdCoO$_2$. The strength of the Kondo coupling is known, as-grown crystals are extremely high purity and th…
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The layered delafossite metal PdCrO$_2$ is a natural heterostructure of highly conductive Pd layers Kondo coupled to localized spins in the adjacent Mott insulating CrO$_2$ layers. At high temperatures $T$ it has a $T$-linear resistivity which is not seen in the isostructural but non-magnetic PdCoO$_2$. The strength of the Kondo coupling is known, as-grown crystals are extremely high purity and the Fermi surface is both very simple and experimentally known. It is therefore an ideal material platform in which to investigate 'Planckian metal' physics. We do this by means of controlled introduction of point disorder, measurement of the thermal conductivity and Lorenz ratio and studying the sources of its high temperature entropy. The $T$-linear resistivity is seen to be due mainly to elastic scattering and to arise from a sum of several scattering mechanisms. Remarkably, this sum leads to a scattering rate within 10$\%$ of the Planckian value of $k_BT/$$\hbar$.
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Submitted 25 January, 2023;
originally announced January 2023.
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Low-symmetry non-local transport in microstructured squares of delafossite metals
Authors:
Philippa H. McGuinness,
Elina Zhakina,
Markus König,
Maja D. Bachmann,
Carsten Putzke,
Philip J. W. Moll,
Seunghyun Khim,
Andrew P. Mackenzie
Abstract:
Intense work studying the ballistic regime of electron transport in two dimensional systems based on semiconductors and graphene had been thought to have established most of the key experimental facts of the field. In recent years, however, new forms of ballistic transport have become accessible in the quasi-two-dimensional delafossite metals, whose Fermi wavelength is a factor of 100 shorter than…
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Intense work studying the ballistic regime of electron transport in two dimensional systems based on semiconductors and graphene had been thought to have established most of the key experimental facts of the field. In recent years, however, new forms of ballistic transport have become accessible in the quasi-two-dimensional delafossite metals, whose Fermi wavelength is a factor of 100 shorter than those typically studied in the previous work, and whose Fermi surfaces are nearly hexagonal in shape, and therefore strongly faceted. This has some profound consequences for results obtained from the classic ballistic transport experiment of studying bend and Hall resistances in mesoscopic squares fabricated from delafossite single crystals. We observe pronounced anisotropies in bend resistances and even a Hall voltage that is strongly asymmetric in magnetic field. Although some of our observations are non-intuitive at first sight, we show that they can be understood within a non-local Landauer-Büttiker analysis tailored to the symmetries of the square/hexagonal geometries of our combined device/Fermi surface system. Signatures of non-local transport can be resolved for squares of linear dimension of nearly 100 $μ$m, approximately a factor of 15 larger than the bulk mean free path of the crystal from which the device was fabricated.
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Submitted 1 November, 2021;
originally announced November 2021.
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Controlled introduction of defects to delafossite metals by electron irradiation
Authors:
V. Sunko,
P. H. McGuinness,
C. S. Chang,
E. Zhakina,
S. Khim,
C. E. Dreyer,
M. Konczykowski,
M. König,
D. A. Muller,
A. P. Mackenzie
Abstract:
The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence o…
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The delafossite metals PdCoO$_{2}$, PtCoO$_{2}$ and PdCrO$_{2}$ are among the highest conductivity materials known, with low temperature mean free paths of tens of microns in the best as-grown single crystals. A key question is whether these very low resistive scattering rates result from strongly suppressed backscattering due to special features of the electronic structure, or are a consequence of highly unusual levels of crystalline perfection. We report the results of experiments in which high energy electron irradiation was used to introduce point disorder to the Pd and Pt layers in which the conduction occurs. We obtain the cross-section for formation of Frenkel pairs in absolute units, and cross-check our analysis with first principles calculations of the relevant atomic displacement energies. We observe an increase of resistivity that is linear in defect density with a slope consistent with scattering in the unitary limit. Our results enable us to deduce that the as-grown crystals contain extremely low levels of in-plane defects of approximately $0.001\%$. This confirms that crystalline perfection is the most important factor in realizing the long mean free paths, and highlights how unusual these delafossite metals are in comparison with the vast majority of other multi-component oxides and alloys. We discuss the implications of our findings for future materials research.
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Submitted 6 January, 2020;
originally announced January 2020.
