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Ultra-Wide Bandgap Gallium Oxide Films: UV-Luminescence and Phonon Dynamics at Extreme Temperatures
Authors:
Isiaka Lukman,
Matthew D. McCluskey,
Leah Bergman
Abstract:
$β$-Ga$_2$O$_3…
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$β$-Ga$_2$O$_3$ is a semiconductor with bandgap in the deep-UV ~ 5 eV. Due to its strong phonon-hole coupling, holes are self-trapped inhibiting bandgap luminescence at the deep-UV. In contrast, the self-trapped holes (STH) can exhibit a strong luminescence at ~ 3.5 eV. This research addresses the thermal response of the STH photoluminescence (PL), and the role of phonon interactions at temperatures 77 K - 622 K in nanocrystalline films. It was found that the PL intensity strongly diminishes as a function of increasing temperature with activation energy ~ 72 meV. A study of the Raman modes revealed that the intensity of the high frequency modes of the Ga$_I$O$_4$ site decrease with temperature, implying a phonon annihilation process. These modes, which have comparable energy to the STH activation energy, thus can couple to the STH and transition them from a radiative to a non-radiative regime in accordance with the configurational coordinate model at the strong phonon coupling limit. The significantly broad Gaussian linewidth of the PL is also a manifestation of a strong STH-phonon coupling. Furthermore, the peak position of the STH exhibited a negligible temperature response, in contrast to the redshift of ~ 220 meV of the bandedge of the film. In contrast to the intensity behavior of the high frequency Raman modes, the low frequency ones were found to follow the thermal Bose-Einstein phonon population.
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Submitted 15 October, 2023;
originally announced October 2023.
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Persistent room temperature photodarkening in Cu-doped \b{eta}-Ga2O3
Authors:
J. Jesenovec,
C. Pansegrau,
M. D. McCluskey,
J. S. McCloy,
T. D. Gustafson,
L. E. Halliburton,
J. B. Varley
Abstract:
Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped Ga2O3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indi…
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Beta-Ga2O3 is an ultra-wide bandgap semiconductor with emerging applications in power electronics. The introduction of acceptor dopants yields semi-insulating substrates necessary for thin-film devices. In the present work, exposure of Cu-doped Ga2O3 to UV light > 4 eV is shown to cause large, persistent photo-induced darkening at room temperature. Electron paramagnetic resonance spectroscopy indicates that light exposure converts Cu2+ to Cu3+, a rare oxidation state that is responsible for the optical absorption. The photodarkening is accompanied by the appearance of O-H vibrational modes in the infrared spectrum. Hybrid function calculations show that Cu acceptors can favorably complex with hydrogen donors incorporated as interstitial (Hi) or substitutional (H_O) defects. When Cu_Ga-H_O complexes absorb light, hydrogen is released, contributing to the observed Cu3+ species and O-H modes.
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Submitted 5 January, 2022;
originally announced January 2022.
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Spectroscopic studies of the mechanism of reversible photodegradation of 1-substituted aminoanthraquinone-doped polymers
Authors:
Sheng-Ting Hung,
Ankita Bhuyan,
Kyle Schademan,
Joost Steverlynck,
Matthew D. McCluskey,
Guy Koeckelberghs,
Koen Clays,
Mark G. Kuzyk
Abstract:
The mechanism of reversible photodegradation of 1-substituted aminoanthraquinones doped into poly(methyl methacrylate) and polystyrene is investigated. Time-dependent density functional theory is employed to predict the transition energies and corresponding oscillator strengths of the proposed reversibly- and irreversibly-damaged dye species. Ultraviolet-visible and Fourier transform infrared (FTI…
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The mechanism of reversible photodegradation of 1-substituted aminoanthraquinones doped into poly(methyl methacrylate) and polystyrene is investigated. Time-dependent density functional theory is employed to predict the transition energies and corresponding oscillator strengths of the proposed reversibly- and irreversibly-damaged dye species. Ultraviolet-visible and Fourier transform infrared (FTIR) spectroscopy are used to characterize which species are present. FTIR spectroscopy indicates that both dye and polymer undergo reversible photodegradation when irradiated with a visible laser. These findings suggest that photodegradation of 1-substituted aminoanthraquinones doped in polymers originates from interactions between dyes and photoinduced thermally-degraded polymers, and the metastable product may recover or further degrade irreversibly.
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Submitted 9 November, 2015;
originally announced November 2015.
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Ferromagnetism in Ga1-xMnxP: evidence for inter-Mn exchange mediated by localized holes within a detached impurity band
Authors:
M. A. Scarpulla,
B. L. Cardozo,
W. M. Hlaing Oo,
M. D. McCluskey,
O. D. Dubon
Abstract:
We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x<0.06, infrared absorption and photoconductivity spectra indicate the presence of a Mn impurity band which is not merged with the valence band. At temperatures above TC (<65 K) electrical transport is dominated by excitation across this energy gap while nearest neighbor hop** domin…
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We demonstrate that in ferromagnetic Ga1-xMnxP exchange is mediated by holes localized in a Mn-derived band. For x<0.06, infrared absorption and photoconductivity spectra indicate the presence of a Mn impurity band which is not merged with the valence band. At temperatures above TC (<65 K) electrical transport is dominated by excitation across this energy gap while nearest neighbor hop** dominates below TC. Magnetization measurements reveal a moment of 3.5 Bohr magnetons per substitutional Mn, while the large anomalous Hall signal unambiguously demonstrates that the ferromagnetism is carrier-mediated.
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Submitted 20 April, 2005; v1 submitted 11 January, 2005;
originally announced January 2005.
