Showing 1–50 of 52 results for author: McCallum, J C

Latched Detection of Zeptojoule Spin Echoes with a Kinetic Inductance Parametric Oscillator

Authors: Wyatt Vine, Anders Kringhøj, Mykhailo Savytskyi, Daniel Parker, Thomas Schenkel, Brett C. Johnson, Jeffrey C. McCallum, Andrea Morello, Jarryd J. Pla

Abstract: When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linear… ▽ More When strongly pumped at twice their resonant frequency, non-linear resonators develop a high-amplitude intracavity field, a phenomenon known as parametric self-oscillations. The boundary over which this instability occurs can be extremely sharp and thereby presents an opportunity for realizing a detector. Here we operate such a device based on a superconducting microwave resonator whose non-linearity is engineered from kinetic inductance. The device indicates the absorption of low-power microwave wavepackets by transitioning to a self-oscillating state. Using calibrated wavepackets we measure the detection efficiency with zeptojoule energy wavepackets. We then apply it to measurements of electron spin resonance, using an ensemble of $^{209}$Bi donors in silicon that are inductively coupled to the resonator. We achieve a latched-readout of the spin signal with an amplitude that is five hundred times greater than the underlying spin echoes. △ Less

Submitted 6 November, 2023; originally announced November 2023.

Deep-level structure of the spin-active recombination center in dilute nitrides

Authors: A. C. Ulibarri, C. T. K. Lew, S. Q. Lim, J. C. McCallum, B. C. Johnson, J. C. Harmand, J. Peretti, A. C. H. Rowe

Abstract: A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap el… ▽ More A Gallium interstitial defect (Ga$_{\textrm{i}}$) is thought to be responsible for the spectacular spin-dependent recombination (SDR) in GaAs$_{1-x}$N$_x$ dilute nitride semiconductors. Current understanding associates this defect with two in-gap levels corresponding to the (+/0) and (++/+) charge-state transitions. Using a spin-sensitive photo-induced current transient spectroscopy, the in-gap electronic structure of a $x$ = 0.021 alloy is revealed. The (+/0) state lies $\approx$ 0.27 eV below the conduction band edge, and an anomalous, negative activation energy reveals the presence of not one but \textit{two} other states in the gap. The observations are consistent with a (++/+) state $\approx$ 0.19 eV above the valence band edge, and a hitherto ignored, (+++/++) state $\approx$ 25 meV above the valence band edge. These observations can inform efforts to better model the SDR and the Ga$_{\textrm{i}}$ defect's local chemical environment. △ Less

Submitted 1 December, 2023; v1 submitted 27 October, 2023; originally announced October 2023.

Comments: 6 pages, 5 figures plus Supplementary Material

Journal ref: Physical Review Letters 132, 186402 (2024)

Millisecond electron spin coherence time for erbium ions in silicon

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Shao Q. Lim, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Nikolay V. Abrosimov, Hans-Joachim Pohl, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compat… ▽ More Spins in silicon that are accessible via a telecom-compatible optical transition are a versatile platform for quantum information processing that can leverage the well-established silicon nanofabrication industry. Key to these applications are long coherence times on the optical and spin transitions to provide a robust system for interfacing photonic and spin qubits. Here, we report telecom-compatible Er3+ sites with long optical and electron spin coherence times, measured within a nuclear spin-free silicon crystal (<0.01% 29Si) using optical detection. We investigate two sites and find 0.1 GHz optical inhomogeneous linewidths and homogeneous linewidths below 70 kHz for both sites. We measure the electron spin coherence time of both sites using optically detected magnetic resonance and observe Hahn echo decay constants of 0.8 ms and 1.2 ms at around 11 mT. These optical and spin properties of Er3+:Si are an important milestone towards using optically accessible spins in silicon for a broad range of quantum information processing applications. △ Less

Submitted 25 July, 2023; v1 submitted 19 July, 2023; originally announced July 2023.

Comments: 14 pages, 6 figures

Graphene-Enhanced Single Ion Detectors for Deterministic Near-Surface Dopant Implantation in Diamond

Authors: Nicholas F. L. Collins, Alexander M. Jakob, Simon G. Robson, Shao Qi Lim, Paul Räcke, Brett C. Johnson, Boqing Liu, Yuerui Lu, Daniel Spemann, Jeffrey C. McCallum, David N. Jamieson

Abstract: Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding appl… ▽ More Colour centre ensembles in diamond have been the subject of intensive investigation for many applications including single photon sources for quantum communication, quantum computation with optical inputs and outputs, and magnetic field sensing down to the nanoscale. Some of these applications are realised with a single centre or randomly distributed ensembles in chips, but the most demanding application for a large-scale quantum computer will require ordered arrays. By configuring an electronic-grade diamond substrate with a biased surface graphene electrode connected to charge-sensitive electronics, it is possible to demonstrate deterministic single ion implantation for ions stop** between 30 and 130~nm deep from a typical stochastic ion source. An implantation event is signalled by a charge pulse induced by the drift of electron-hole pairs from the ion implantation. The ion implantation site is localised with an AFM nanostencil or a focused ion beam. This allows the construction of ordered arrays of single atoms with associated colour centres that paves the way for the fabrication of deterministic colour center networks in a monolithic device. △ Less

Submitted 14 June, 2023; v1 submitted 12 June, 2023; originally announced June 2023.

Comments: 11 pages, 5 figures

Navigating the 16-dimensional Hilbert space of a high-spin donor qudit with electric and magnetic fields

Authors: Irene Fernández de Fuentes, Tim Botzem, Mark A. I. Johnson, Arjen Vaartjes, Serwan Asaad, Vincent Mourik, Fay E. Hudson, Kohei M. Itoh, Brett C. Johnson, Alexander M. Jakob, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of… ▽ More Efficient scaling and flexible control are key aspects of useful quantum computing hardware. Spins in semiconductors combine quantum information processing with electrons, holes or nuclei, control with electric or magnetic fields, and scalable coupling via exchange or dipole interaction. However, accessing large Hilbert space dimensions has remained challenging, due to the short-distance nature of the interactions. Here, we present an atom-based semiconductor platform where a 16-dimensional Hilbert space is built by the combined electron-nuclear states of a single antimony donor in silicon. We demonstrate the ability to navigate this large Hilbert space using both electric and magnetic fields, with gate fidelity exceeding 99.8% on the nuclear spin, and unveil fine details of the system Hamiltonian and its susceptibility to control and noise fields. These results establish high-spin donors as a rich platform for practical quantum information and to explore quantum foundations. △ Less

Submitted 14 June, 2023; v1 submitted 12 June, 2023; originally announced June 2023.

Comments: 31 pages and 19 figures including Supplementary Materials

Journal ref: Nat Commun 15, 1380 (2024)

Photoionization detection of a single Er$^{3+}$ ion with sub-100-ns time resolution

Authors: Yangbo Zhang, Wenda Fan, Jiliang Yang, Hao Guan, Qi Zhang, Xi Qin, Changkui Duan, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the p… ▽ More Efficient detection of single optical centers in solids is essential for quantum information processing, sensing, and single-photon generation applications. In this work, we use radio-frequency (RF) reflectometry to electrically detect the photoionization induced by a single Er$^{3+}$ ion in Si. The high bandwidth and sensitivity of the RF reflectometry provide sub-100-ns time resolution for the photoionization detection. With this technique, the optically excited state lifetime of a single Er$^{3+}$ ion in a Si nano-transistor is measured for the first time to be 0.49 $\pm$ 0.04 $μ$s. Our results demonstrate an efficient approach for detecting a charge state change induced by Er excitation and relaxation. This approach could be used for fast readout of other single optical centers in solids and is attractive for large-scale integrated optical quantum systems thanks to the multi-channel RF reflectometry demonstrated with frequency multiplexing techniques. △ Less

Submitted 1 December, 2022; originally announced December 2022.

In-situ amplification of spin echoes within a kinetic inductance parametric amplifier

Authors: Wyatt Vine, Mykhailo Savytskyi, Daniel Parker, James Slack-Smith, Thomas Schenkel, Jeffrey C. McCallum, Brett C. Johnson, Andrea Morello, Jarryd J. Pla

Abstract: The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson j… ▽ More The use of superconducting micro-resonators in combination with quantum-limited Josephson parametric amplifiers has in recent years lead to more than four orders of magnitude improvement in the sensitivity of pulsed Electron Spin Resonance (ESR) measurements. So far, the microwave resonators and amplifiers have been designed as separate components, largely due to the incompatibility of Josephson junction-based devices with even moderate magnetic fields. This has led to complex spectrometers that operate under strict environments, creating technical barriers for the widespread adoption of the technique. Here we circumvent this issue by inductively coupling an ensemble of spins directly to a weakly nonlinear microwave resonator, which is engineered from a magnetic field-resilient thin superconducting film. We perform pulsed ESR measurements with a $1$~pL effective mode volume and amplify the resulting spin signal using the same device, ultimately achieving a sensitivity of $2.8 \times 10^3$ spins in a single-shot Hahn echo measurement at a temperature of 400 mK. We demonstrate the combined functionalities at fields as large as 254~mT, highlighting the technique's potential for application under more conventional ESR operating conditions. △ Less

Submitted 6 December, 2022; v1 submitted 21 November, 2022; originally announced November 2022.

Nanoscale map** of sub-gap electroluminescence from step-bunched, oxidized 4H-SiC surfaces

Authors: Natalia Alyabyeva, Jacques Ding, Mylène Sauty, Judith Woerle, Yann Jousseaume, Gabriel Ferro, Jeffrey C. McCallum, Jacques Peretti, Brett C. Johnson, Alistair C. H. Rowe

Abstract: Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps fo… ▽ More Scanning tunneling luminescence microscopy (STLM) along with scanning tunneling spectroscopy (STS) is applied to a step-bunched, oxidized 4H-SiC surface prepared on the silicon face of a commercial, n-type SiC wafer using a silicon melt process. The step-bunched surface consists of atomically smooth terraces parallel to the [0001] crystal planes, and rougher risers consisting of nanoscale steps formed by the termination of these planes. The rather striking topography of this surface is well resolved with large tip biases of the order of -8 V and set currents of magnitude less than 1 nA. Hysteresis in the STS spectra is preferentially observed on the risers suggesting that they contain a higher density of surface charge traps than the terraces where hysteresis is more frequently absent. Similarly, at 50 K intense sub-gap light emission centered around 2.4 eV is observed mainly on the risers albeit only with larger tunneling currents of magnitude equal to or greater than 10 nA. These results demonstrate that STLM holds great promise for the observation of impurities and defects responsible for sub-gap light emission with spatial resolutions approaching the length scale of the defects themselves. △ Less

Submitted 18 August, 2022; originally announced August 2022.

Comments: 13 pages, 5 figures; work presented at the International Conference on the Physics of Semiconductors, Sydney, 2022

Journal ref: Physica Status Solidi (b) 260, 2200356 (2023)

Phase transformation-induced superconducting aluminium-silicon alloy rings

Authors: B. C. Johnson, M. Stuiber, D. L. Creedon, A. Berhane, L. H. Willems van Beveren, S. Rubanov, J. H. Cole, V. Mourik, A. R. Hamilton, T. L. Duty, J. C. McCallum

Abstract: The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-… ▽ More The development of a materials platform that exhibits both superconducting and semiconducting properties is an important endeavour for a range of emerging quantum technologies. We investigate the formation of superconductivity in nanowires fabricated with silicon-on-insulator (SOI). Aluminium from deposited contact electrodes is found to interdiffuses with the Si nanowire structures to form an Al-Si alloy along the entire length of the predefined nanowire device over micron length scales at temperatures well below that of the Al-Si eutectic. The resultant transformed nanowire structures are layered in geometry with a continuous Al-Si alloy wire sitting on the buried oxide of the SOI and a residual Si cap sitting on top of the wire. The phase transformed material is conformal with any predefined device patterns and the resultant structures are exceptionally smooth-walled compared to similar nanowire devices formed by silicidation processes. The superconducting properties of a mesoscopic AlSi ring formed on a SOI platform are investigated. Low temperature magnetoresistance oscillations, quantized in units of the fluxoid, h/2e, are observed. △ Less

Submitted 12 July, 2022; originally announced July 2022.

Comments: 11 pages, 9 figures

P-type Ohmic contact to monolayer WSe2 field-effect transistors using high electron affinity amorphous MoO3

Authors: Yi-Hsun Chen, Kaijian Xing, Song Liu, Luke Holtzman, Daniel L. Creedon, Jeffrey C. McCallum, Kenji Watanabe, Takashi Taniguchi, Katayun Barmak, James Hone, Alexander R. Hamilton, Shao-Yu Chen, Michael S. Fuhrer

Abstract: 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathemat… ▽ More 1 School of Physics and Astronomy, Monash University, Clayton, Victoria 3800, Australia 2 Australian Research Council Centre of Excellence in Future Low-Energy Electronics Technologies (FLEET), Monash University, Clayton, Victoria 3800, Australia 3 Department of Mechanical Engineering, Columbia University, New York, New York 10027, United States 4 Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, United States 5 School of Physics, the University of Melbourne, Melbourne, VIC 3010, Australia 6 Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 7 International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan 8 School of Physics, University of New South Wales, 2052 Sydney, Australia 9 Center of Condensed Matter Sciences and Center of Atomic Initiative for New Material, National Taiwan University, Taipei 106, Taiwan 10 Monash Centre for Atomically Thin Materials, Monash University, Clayton, 3800, VIC, Australia △ Less

Submitted 22 June, 2022; originally announced June 2022.

The Zeeman and hyperfine interactions of a single $^{167}Er^{3+}$ ion in Si

Authors: Jiliang Yang, Wenda Fan, Yangbo Zhang, Changkui Duan, Gabriele G. de Boo, Rose L. Ahlefeldt, Jevon J. Longdell, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a s… ▽ More Er-doped Si is a promising candidate for quantum information applications due to its telecom wavelength optical transition and its compatibility with Si nanofabrication technologies. Recent spectroscopic studies based on photoluminescence excitation have shown multiple well-defined lattice sites that Er occupies in Si. Here we report the first measurement of the Zeeman and hyperfine tensors of a single 167Er3+ ion in Si. All the obtained tensors are highly anisotropic with the largest value principal axes aligning in nearly the same direction, and the trace of the lowest crystal field level g-tensor is 17.78$\pm$0.40. The results indicate that this specific Er site is likely to be a distorted cubic site that exhibits monoclinic (C1) symmetry. Finally, zero first-order-Zeeman (ZEFOZ) fields are identified for this site and could be used to reduce decoherence of hyperfine spin states in future experiments. △ Less

Submitted 24 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. B 105, 235306 (2022)

Spectral broadening of a single Er$^{3+}$ ion in a Si nano-transistor

Authors: Jiliang Yang, Jian Wang, Wenda Fan, Yangbo Zhang, Changkui Duan, Guangchong Hu, Gabriele G. de Boo, Brett C. Johnson, Jeffrey C. McCallum, Sven Rogge, Chunming Yin, Jiangfeng Du

Abstract: Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achie… ▽ More Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders of magnitude larger than the sub-kilohertz linewidths observed for ensembles in bulk crystals. The spectral broadening creates a significant challenge for achieving entanglement generation and qubit operation with single rare-earth ions, so it is critical to investigate the broadening mechanisms. We report a spectral broadening study on a single Er$^{3+}$ ion in a Si nano-transistor. The Er-induced photoionisation rate is found to be an appropriate quantity to represent the optical transition probability for spectroscopic studies, and the single ion spectra display a Lorentzian lineshape at all optical powers in use. Spectral broadening is observed at relatively high optical powers and is caused by spectral diffusion on a fast time scale. △ Less

Submitted 27 January, 2022; originally announced January 2022.

Journal ref: Phys. Rev. Applied 18, 034018 (2022)

Valley population of donor states in highly strained silicon

Authors: B. Voisin, K. S. H. Ng, J. Salfi, M. Usman, J. C. Wong, A. Tankasala, B. C. Johnson, J. C. McCallum, L. Hutin, B. Bertrand, M. Vinet, N. Valanoor, M. Y. Simmons, R. Rahman, L. C. L. Hollenberg, S. Rogge

Abstract: Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.… ▽ More Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by extension the valley states of electrons bound to phosphorus donors. Here, single phosphorus atoms are embedded in an engineered thin layer of silicon strained to 0.8% and their wave function imaged using spatially resolved spectroscopy. A prevalence of the out-of-plane valleys is confirmed from the real-space images, and a combination of theoretical modelling tools is used to assess how this valley repopulation effect can yield isotropic exchange and tunnel interactions in the $xy$-plane relevant for atomically precise donor qubit devices. Finally, the residual presence of in-plane valleys is evidenced by a Fourier analysis of both experimental and theoretical images, and atomistic calculations highlight the importance of higher orbital excited states to obtain a precise relationship between valley population and strain. Controlling the valley degree of freedom in engineered strained epilayers provides a new competitive asset for the development of donor-based quantum technologies in silicon. △ Less

Submitted 17 September, 2021; originally announced September 2021.

Optical and Zeeman spectroscopy of individual Er ion pairs in silicon

Authors: Guangchong Hu, Rose L. Ahlefeldt, Gabriele G. de Boo, Alexey Lyasota, Brett C. Johnson, Jeffrey C. McCallum, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positivel… ▽ More We make the first study the optical energy level structure and interactions of pairs of single rare earth ions using a hybrid electro-optical detection method applied to Er-implanted silicon. Two examples of Er3+ pairs were identified in the optical spectrum by their characteristic energy level splitting patterns, and linear Zeeman spectra were used to characterise the sites. One pair is positively identified as two identical Er3+ ions in sites of at least C2 symmetry coupled via a large, 200 GHz Ising-like spin interaction and 1.5 GHz resonant optical interaction. Small non-Ising contributions to the spin interaction are attributed to distortion of the site measurable because of the high resolution of the single-ion measurement. The interactions are compared to previous measurements made using rare earth ensemble systems, and the application of this type of strongly coupled ion array to quantum computing is discussed. △ Less

Submitted 17 August, 2021; originally announced August 2021.

Comments: 11 pages, 5 figures

Journal ref: Quantum Sci. Technol. 7, 025019 (2022)

Sub-megahertz homogeneous linewidth for Er in Si via in situ single photon detection

Authors: Ian R. Berkman, Alexey Lyasota, Gabriele G. de Boo, John G. Bartholomew, Brett C. Johnson, Jeffrey C. McCallum, Bin-Bin Xu, Shouyi Xie, Rose L. Ahlefeldt, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonanc… ▽ More We studied the optical properties of a resonantly excited trivalent Er ensemble in Si accessed via in situ single photon detection. A novel approach which avoids nanofabrication on the sample is introduced, resulting in a highly efficient detection of 70 excitation frequencies, of which 63 resonances have not been observed in literature. The center frequencies and optical lifetimes of all resonances have been extracted, showing that 5% of the resonances are within 1 GHz of our electrically detected resonances and that the optical lifetimes range from 0.5 ms up to 1.5 ms. We observed inhomogeneous broadening of less than 400 MHz and an upper bound on the homogeneous linewidth of 1.4 MHz and 0.75 MHz for two separate resonances, which is a reduction of more than an order of magnitude observed to date. These narrow optical transition properties show that Er in Si is an excellent candidate for future quantum information and communication applications. △ Less

Submitted 16 August, 2021; originally announced August 2021.

Comments: 12 pages, 13 figures

Journal ref: Phys. Rev. Applied 19, 014037 (2023)

Ultra-shallow junction electrodes in low-loss silicon micro-ring resonators

Authors: Bin-Bin Xu, Gabriele G. de Boo, Brett C. Johnson, Miloš Rančić, Alvaro Casas Bedoya, Blair Morrison, Jeffrey C. McCallum, Benjamin J. Eggleton, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function… ▽ More Electrodes in close proximity to an active area of a device are required for sufficient electrical control. The integration of such electrodes into optical devices can be challenging since low optical losses must be retained to realise high quality operation. Here, we demonstrate that it is possible to place a metallic shallow phosphorus doped layer in a silicon micro-ring cavity that can function at cryogenic temperatures. We verify that the shallow do** layer affects the local refractive index while inducing minimal losses with quality factors up to 10$^5$. This demonstration opens up a pathway to the integration of an electronic device, such as a single-electron transistor, into an optical circuit on the same material platform. △ Less

Submitted 11 October, 2020; originally announced November 2020.

Comments: 6 figures

Journal ref: Phys. Rev. Applied 15, 044014 (2021)

Isotopic enrichment of silicon by high fluence $^{28}$Si$^-$ ion implantation

Authors: D. Holmes, B. C. Johnson, C. Chua, B. Voisin, S. Kocsis, S. Rubanov, S. G. Robson, J. C. McCallum, D. R McCamey, S. Rogge, D. N. Jamieson

Abstract: Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of… ▽ More Spins in the `semiconductor vacuum' of silicon-28 ($^{28}$Si) are suitable qubit candidates due to their long coherence times. An isotopically purified substrate of $^{28}$Si is required to limit the decoherence pathway caused by magnetic perturbations from surrounding $^{29}$Si nuclear spins (I=1/2), present in natural Si (nat Si) at an abundance of 4.67%. We isotopically enrich surface layers of nat Si by sputtering using high fluence $^{28}$Si$^-$ implantation. Phosphorus (P) donors implanted into one such $^{28}$Si layer with ~3000 ppm $^{29}$Si, produced by implanting 30 keV $^{28}$Si$^-$ ions at a fluence of 4x10^18 cm^-2, were measured with pulsed electron spin resonance, confirming successful donor activation upon annealing. The mono-exponential decay of the Hahn echo signal indicates a depletion of $^{29}$Si. A coherence time of T2 = 285 +/- 14 us is extracted, which is longer than that obtained in nat Si for similar do** concentrations and can be increased by reducing the P concentration in future. The isotopic enrichment was improved by employing one-for-one ion sputtering using 45 keV $^{28}$Si$^-$ implantation. A fluence of 2.63x10^18 cm^-2 $^{28}$Si$^-$ ions were implanted at this energy into nat Si, resulting in an isotopically enriched surface layer ~100 nm thick; suitable for providing a sufficient volume of $^{28}$Si for donor qubits implanted into the near-surface region. We observe a depletion of $^{29}$Si to 250 ppm as measured by secondary ion mass spectrometry. The impurity content and the crystallization kinetics via solid phase epitaxy are discussed. The $^{28}$Si layer is confirmed to be a single crystal using transmission electron microscopy. This method of Si isotopic enrichment shows promise for incorporating into the fabrication process flow of Si spin qubit devices. △ Less

Submitted 17 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Materials 5, 014601 (2021)

Deterministic Single Ion Implantation with 99.87% Confidence for Scalable Donor-Qubit Arrays in Silicon

Authors: Alexander M. Jakob, Simon G. Robson, Vivien Schmitt, Vincent Mourik, Matthias Posselt, Daniel Spemann, Brett C. Johnson, Hannes R. Firgau, Edwin Mayes, Jeffrey C. McCallum, Andrea Morello, David N. Jamieson

Abstract: The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices requi… ▽ More The attributes of group-V-donor spins implanted in an isotopically purified $^{28}$Si crystal make them attractive qubits for large-scale quantum computer devices. Important features include long nuclear and electron spin lifetimes of $^{31}$P, hyperfine clock transitions in $^{209}$Bi and electrically controllable $^{123}$Sb nuclear spins. However, architectures for scalable quantum devices require the ability to fabricate deterministic arrays of individual donor atoms, placed with sufficient precision to enable high-fidelity quantum operations. Here we employ on-chip electrodes with charge-sensitive electronics to demonstrate the implantation of single low-energy (14 keV) P$^+$ ions with an unprecedented $99.87\pm0.02$% confidence, while operating close to room-temperature. This permits integration with an atomic force microscope equipped with a scanning-probe ion aperture to address the critical issue of directing the implanted ions to precise locations. These results show that deterministic single-ion implantation can be a viable pathway for manufacturing large-scale donor arrays for quantum computation and other applications. △ Less

Submitted 9 September, 2020; v1 submitted 7 September, 2020; originally announced September 2020.

Comments: 12 pages, 4 figures

Piezoresistance in defect-engineered silicon

Authors: H. Li, A. Thayil, C. T. K. Lew, M. Filoche, B. C. Johnson, J. C. McCallum, S. Arscott, A. C. H. Rowe

Abstract: The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa… ▽ More The steady-state, space-charge-limited piezoresistance (PZR) of defect-engineered, silicon-on-insulator device layers containing silicon divacancy defects changes sign as a function of applied bias. Above a punch-through voltage ($V_t$) corresponding to the onset of a space-charge-limited hole current, the longitudinal $\langle 110 \rangle$ PZR $π$-coefficient is $π\approx 65 \times 10^{-11}$~Pa$^{-1}$, similar to the value obtained in charge-neutral, p-type silicon. Below $V_t$, the mechanical stress dependence of the Shockley-Read-Hall (SRH) recombination parameters, specifically the divacancy trap energy $E_T$ which is estimated to vary by $\approx 30$~$μ$V/MPa, yields $π\approx -25 \times 10^{-11}$~Pa$^{-1}$. The combination of space-charge-limited transport and defect engineering which significantly reduces SRH recombination lifetimes makes this work directly relevant to discussions of giant or anomalous PZR at small strains in nano-silicon whose characteristic dimension is larger than a few nanometers. In this limit the reduced electrostatic dimensionality lowers $V_t$ and amplifies space-charge-limited currents and efficient SRH recombination occurs via surface defects. The results reinforce the growing evidence that in steady state, electro-mechanically active defects can result in anomalous, but not giant, PZR. △ Less

Submitted 1 January, 2021; v1 submitted 11 August, 2020; originally announced August 2020.

Comments: 9 pages, 8 figures

Journal ref: Phys. Rev. Applied 15, 014046 (2021)

Epitaxial growth of SiC on (100) Diamond

Authors: A. Tsai, A. Aghajamali, N. Dontschuk, B. C. Johnson, M. Usman, A. K. Schenk, M. Sear, C. I. Pakes, L. C. L. Hollenberg, J. C. McCallum, S. Rubanov, A. Tadich, N. A. Marks, A. Stacey

Abstract: We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the inter… ▽ More We demonstrate locally coherent heteroepitaxial growth of silicon carbide (SiC) on diamond, a result contrary to current understanding of heterojunctions as the lattice mismatch exceeds $20\%$. High-resolution transmission electron microscopy (HRTEM) confirms the quality and atomic structure near the interface. Guided by molecular dynamics simulations, a theoretical model is proposed for the interface wherein the large lattice strain is alleviated via point dislocations in a two-dimensional plane without forming extended defects in three dimensions. The possibility of realising heterojunctions of technologically important materials such as SiC with diamond offers promising pathways for thermal management of high power electronics. At a fundamental level, the study redefines our understanding of heterostructure formation with large lattice mismatch. △ Less

Submitted 17 February, 2020; originally announced February 2020.

Comments: 16 pages, 4 figures

Scanned single-electron probe inside a silicon electronic device

Authors: Kevin S. H. Ng, Benoit Voisin, Brett C. Johnson, Jeffrey C. McCallum, Joe Salfi, Sven Rogge

Abstract: Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic sca… ▽ More Solid-state devices can be fabricated at the atomic scale, with applications ranging from classical logic to current standards and quantum technologies. While it is very desirable to probe these devices and the quantum states they host at the atomic scale, typical methods rely on long-ranged capacitive interactions, making this difficult. Here we probe a silicon electronic device at the atomic scale using a localized electronic quantum dot induced directly within the device at a desired location, using the biased tip of a low-temperature scanning tunneling microscope. We demonstrate control over short-ranged tunnel coupling interactions of the quantum dot with the device's source reservoir using sub-nm position control of the tip, and the quantum dot energy level using a voltage applied to the device's gate reservoir. Despite the $\sim 1$nm proximity of the quantum dot to the metallic tip, we find the gate provides sufficient capacitance to enable a high degree of electric control. Combined with atomic scale imaging, we use the quantum dot to probe applied electric fields and charge in individual defects in the device. This capability is expected to aid in the understanding of atomic-scale devices and the quantum states realized in them. △ Less

Submitted 28 January, 2020; originally announced January 2020.

Comments: 6 pages, 4 figures, 5 pages supplementary material

High resolution spectroscopy of individual erbium ions in strong magnetic fields

Authors: Gabriele G. de Boo, Chunming Yin, Miloš Rančić, Brett C. Johnson, Jeffrey C. McCallum, Matthew Sellars, Sven Rogge

Abstract: In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In par… ▽ More In this paper we use electrically detected optical excitation spectroscopy of individual erbium ions in silicon to determine their optical and paramagnetic properties simultaneously. We demonstrate that this high spectral resolution technique can be exploited to observe interactions typically unresolvable in silicon using conventional spectroscopy techniques due to inhomogeneous broadening. In particular, we resolve the Zeeman splitting of the 4I15/2 ground and 4I13/2 excited state separately and in strong magnetic fields we observe the anti-crossings between Zeeman components of different crystal field levels. We discuss the use of this electronic detection technique in identifying the symmetry and structure of erbium sites in silicon. △ Less

Submitted 12 December, 2019; originally announced December 2019.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. B 102, 155309 (2020)

Controllable freezing of the nuclear spin bath in a single-atom spin qubit

Authors: Mateusz T. Mądzik, Thaddeus D. Ladd, Fay E. Hudson, Kohei M. Itoh, Alexander M. Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P… ▽ More The quantum coherence and gate fidelity of electron spin qubits in semiconductors is often limited by noise arising from coupling to a bath of nuclear spins. Isotopic enrichment of spin-zero nuclei such as $^{28}$Si has led to spectacular improvements of the dephasing time $T_2^*$ which, surprisingly, can extend two orders of magnitude beyond theoretical expectations. Using a single-atom $^{31}$P qubit in enriched $^{28}$Si, we show that the abnormally long $T_2^*$ is due to the controllable freezing of the dynamics of the residual $^{29}$Si nuclei close to the donor. Our conclusions are supported by a nearly parameter-free modeling of the $^{29}$Si nuclear spin dynamics, which reveals the degree of back-action provided by the electron spin as it interacts with the nuclear bath. This study clarifies the limits of ergodic assumptions in analyzing many-body spin-problems under conditions of strong, frequent measurement, and provides novel strategies for maximizing coherence and gate fidelity of spin qubits in semiconductors. △ Less

Submitted 25 July, 2019; originally announced July 2019.

Comments: 11 pages, 5 figures

Journal ref: Science Advances 6 : eaba3442 (2020)

Coherent electrical control of a single high-spin nucleus in silicon

Authors: Serwan Asaad, Vincent Mourik, Benjamin Joecker, Mark A. I. Johnson, Andrew D. Baczewski, Hannes R. Firgau, Mateusz T. Mądzik, Vivien Schmitt, Jarryd J. Pla, Fay E. Hudson, Kohei M. Itoh, Jeffrey C. McCallum, Andrew S. Dzurak, Arne Laucht, Andrea Morello

Abstract: Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to… ▽ More Nuclear spins are highly coherent quantum objects. In large ensembles, their control and detection via magnetic resonance is widely exploited, e.g. in chemistry, medicine, materials science and mining. Nuclear spins also featured in early ideas and demonstrations of quantum information processing. Scaling up these ideas requires controlling individual nuclei, which can be detected when coupled to an electron. However, the need to address the nuclei via oscillating magnetic fields complicates their integration in multi-spin nanoscale devices, because the field cannot be localized or screened. Control via electric fields would resolve this problem, but previous methods relied upon transducing electric signals into magnetic fields via the electron-nuclear hyperfine interaction, which severely affects the nuclear coherence. Here we demonstrate the coherent quantum control of a single antimony (spin-7/2) nucleus, using localized electric fields produced within a silicon nanoelectronic device. The method exploits an idea first proposed in 1961 but never realized experimentally with a single nucleus. Our results are quantitatively supported by a microscopic theoretical model that reveals how the purely electrical modulation of the nuclear electric quadrupole interaction, in the presence of lattice strain, results in coherent nuclear spin transitions. The spin dephasing time, 0.1 seconds, surpasses by orders of magnitude those obtained via methods that require a coupled electron spin for electrical drive. These results show that high-spin quadrupolar nuclei could be deployed as chaotic models, strain sensors and hybrid spin-mechanical quantum systems using all-electrical controls. Integrating electrically controllable nuclei with quantum dots could pave the way to scalable nuclear- and electron-spin-based quantum computers in silicon that operate without the need for oscillating magnetic fields. △ Less

Submitted 3 June, 2019; originally announced June 2019.

Comments: Main text and figures followed by methods, extended data, and supplementary information

Journal ref: Nature 579, 205 (2020)

Electron spin relaxation of single phosphorus donors in metal-oxide-semiconductor nanoscale devices

Authors: Stefanie B. Tenberg, Serwan Asaad, Mateusz T. Mądzik, Mark A. I. Johnson, Benjamin Joecker, Arne Laucht, Fay E. Hudson, Kohei M. Itoh, A. Malwin Jakob, Brett C. Johnson, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Robert Joynt, Andrea Morello

Abstract: We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor… ▽ More We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar to the environment of the spins. The measurements are conducted at low temperatures ($T\approx 100$~mK), as a function of external magnetic field $B_0$ and donor electrochemical potential $μ_{\rm D}$. We observe a magnetic field dependence of the form $1/T_1\propto B_0^5$ for $B_0\gtrsim 3\,$ T, corresponding to the phonon-induced relaxation typical of donors in the bulk. However, the relaxation rate varies by up to two orders of magnitude between different devices. We attribute these differences to variations in lattice strain at the location of the donor. For $B_0\lesssim 3\,$T, the relaxation rate changes to $1/T_1\propto B_0$ for two devices. This is consistent with relaxation induced by evanescent-wave Johnson noise created by the metal structures fabricated above the donors. At such low fields, where $T_1>1\,$s, we also observe and quantify the spurious increase of $1/T_1$ when the electrochemical potential of the spin excited state $|\uparrow\rangle$ comes in proximity to empty states in the charge reservoir, leading to spin-dependent tunneling that resets the spin to $|\downarrow\rangle$. These results give precious insights into the microscopic phenomena that affect spin relaxation in MOS nanoscale devices, and provide strategies for engineering spin qubits with improved spin lifetimes. △ Less

Submitted 26 March, 2019; v1 submitted 17 December, 2018; originally announced December 2018.

Comments: 14 pages, 8 figures. Version 2 has extensive text revisions, typo corrections, and two extra authors

Journal ref: Phys. Rev. B 99, 205306 (2019)

Microscopic imaging of elastic deformation in diamond via in-situ stress tensor sensors

Authors: D. A. Broadway, B. C. Johnson, M. S. J. Barson, S. E. Lillie, N. Dontschuk, D. J. McCloskey, A. Tsai, T. Teraji, D. A. Simpson, A. Stacey, J. C. McCallum, J. E. Bradby, M. W. Doherty, L. C. L. Hollenberg, J. -P. Tetienne

Abstract: The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stre… ▽ More The precise measurement of mechanical stress at the nanoscale is of fundamental and technological importance. In principle, all six independent variables of the stress tensor, which describe the direction and magnitude of compression/tension and shear stress in a solid, can be exploited to tune or enhance the properties of materials and devices. However, existing techniques to probe the local stress are generally incapable of measuring the entire stress tensor. Here, we make use of an ensemble of atomic-sized in-situ strain sensors in diamond (nitrogen-vacancy defects) to achieve spatial map** of the full stress tensor, with a sub-micrometer spatial resolution and a sensitivity of the order of 1 MPa (corresponding to a strain of less than $10^{-6}$). To illustrate the effectiveness and versatility of the technique, we apply it to a broad range of experimental situations, including map** the elastic stress induced by localized implantation damage, nano-indents and scratches. In addition, we observe surprisingly large stress contributions from functional electronic devices fabricated on the diamond, and also demonstrate sensitivity to deformations of materials in contact with the diamond. Our technique could enable in-situ measurements of the mechanical response of diamond nanostructures under various stimuli, with potential applications in strain engineering for diamond-based quantum technologies and in nanomechanical sensing for on-chip mass spectroscopy. △ Less

Submitted 3 December, 2018; originally announced December 2018.

Comments: 20 pages including SI

Journal ref: Nano Lett. 19, 4543-4550 (2019)

Engineering long spin coherence times of spin-orbit systems

Authors: T. Kobayashi, J. Salfi, J. van der Heijden, C. Chua, M. G. House, D. Culcer, W. D. Hutchison, B. C. Johnson, J. C. McCallum, H. Riemann, N. V. Abrosimov, P. Becker, H. -J. Pohl, M. Y. Simmons, S. Rogge

Abstract: Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s… ▽ More Spin-orbit coupling fundamentally alters spin qubits, opening pathways to improve the scalability of quantum computers via long distance coupling mediated by electric fields, photons, or phonons. It also allows for new engineered hybrid and topological quantum systems. However, spin qubits with intrinsic spin-orbit coupling are not yet viable for quantum technologies due to their short ($\sim1~μ$s) coherence times $T_2$, while qubits with long $T_2$ have weak spin-orbit coupling making qubit coupling short-ranged and challenging for scale-up. Here we show that an intrinsic spin-orbit coupled "generalised spin" with total angular momentum $J=\tfrac{3}{2}$, which is defined by holes bound to boron dopant atoms in strained $^{28}\mathrm{Si}$, has $T_2$ rivalling the electron spins of donors and quantum dots in $^{28}\mathrm{Si}$. Using pulsed electron paramagnetic resonance, we obtain $0.9~\mathrm{ms}$ Hahn-echo and $9~\mathrm{ms}$ dynamical decoupling $T_2$ times, where strain plays a key role to reduce spin-lattice relaxation and the longitudinal electric coupling responsible for decoherence induced by electric field noise. Our analysis shows that transverse electric dipole can be exploited for electric manipulation and qubit coupling while maintaining a weak longitudinal coupling, a feature of $J=\tfrac{3}{2}$ atomic systems with a strain engineered quadrupole degree of freedom. These results establish single-atom hole spins in silicon with quantised total angular momentum, not spin, as a highly coherent platform with tuneable intrinsic spin-orbit coupling advantageous to build artificial quantum systems and couple qubits over long distances. △ Less

Submitted 1 October, 2018; v1 submitted 28 September, 2018; originally announced September 2018.

Comments: 14 pages, 4 figures + 13 pages, 5 figures of Supplemental material

Journal ref: Nature Materials 20, 38-42 (2021)

Spatial map** of band bending in semiconductor devices using in-situ quantum sensors

Authors: D. A. Broadway, N. Dontschuk, A. Tsai, S. E. Lillie, C. T. -K. Lew, J. C. McCallum, B. C. Johnson, M. W. Doherty, A. Stacey, L. C. L. Hollenberg, J. -P. Tetienne

Abstract: Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are… ▽ More Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional map** of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices. △ Less

Submitted 13 September, 2018; originally announced September 2018.

Comments: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-0

Journal ref: Nature Electronics 1, 502-507 (2018)

Single rare-earth ions as atomic-scale probes in ultra-scaled transistors

Authors: Qi Zhang, Guangchong Hu, Gabriele G. de Boo, Milos Rancic, Brett C. Johnson, Jeffrey C. McCallum, Jiangfeng Du, Matthew J. Sellars, Chunming Yin, Sven Rogge

Abstract: Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local… ▽ More Continued dimensional scaling of semiconductor devices has driven information technology into vastly diverse applications. As the size of devices approaches fundamental limits, metrology techniques with nanometre resolution and three-dimensional (3D) capabilities are desired for device optimisation. For example, the performance of an ultra-scaled transistor can be strongly influenced by the local electric field and strain. Here we study the spectral response of single erbium ions to applied electric field and strain in a silicon ultra-scaled transistor. Stark shifts induced by both the overall electric field and the local charge environment are observed. Further, changes in strain smaller than $3\times 10^{-6}$ are detected, which is around two orders of magnitude more sensitive than the standard techniques used in the semiconductor industry. These results open new possibilities for non-destructive 3D map** of the local strain and electric field in the channel of ultra-scaled transistors, using the single erbium ions as ultra-sensitive atomic probes. △ Less

Submitted 5 March, 2018; originally announced March 2018.

Comments: 10+5 pages, 4+3 figures

Journal ref: Nano Lett. 19, 5025 (2019)

Exploring quantum chaos with a single nuclear spin

Authors: Vincent Mourik, Serwan Asaad, Hannes Firgau, Jarryd J. Pla, Catherine Holmes, Gerard J. Milburn, Jeffrey C. McCallum, Andrea Morello

Abstract: Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble cha… ▽ More Most classical dynamical systems are chaotic. The trajectories of two identical systems prepared in infinitesimally different initial conditions diverge exponentially with time. Quantum systems, instead, exhibit quasi-periodicity due to their discrete spectrum. Nonetheless, the dynamics of quantum systems whose classical counterparts are chaotic are expected to show some features that resemble chaotic motion. Among the many controversial aspects of the quantum-classical boundary, the emergence of chaos remains among the least experimentally verified. Time-resolved observations of quantum chaotic dynamics are particularly rare, and as yet unachieved in a single particle, where the subtle interplay between chaos and quantum measurement could be explored at its deepest levels. We present here a realistic proposal to construct a chaotic driven top from the nuclear spin of a single donor atom in silicon, in the presence of a nuclear quadrupole interaction. This system is exquisitely measurable and controllable, and possesses extremely long intrinsic quantum coherence times, allowing for the observation of subtle dynamical behavior over extended periods. We show that signatures of chaos are expected to arise for experimentally realizable parameters of the system, allowing the study of the relation between quantum decoherence and classical chaos, and the observation of dynamical tunneling. △ Less

Submitted 9 October, 2018; v1 submitted 14 March, 2017; originally announced March 2017.

Comments: revised and published version

Journal ref: Phys. Rev. E 98, 042206 (2018)

Coherent control via weak measurements in $^{31}$P single-atom electron and nuclear spin qubits

Authors: J. T. Muhonen, J. P. Dehollain, A. Laucht, S. Simmons, R. Kalra, F. E. Hudson, D. N. Jamieson, J. C. McCallum, K. M. Itoh, A. S. Dzurak, A. Morello

Abstract: The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be… ▽ More The understanding of weak measurements and interaction-free measurements has greatly expanded the conceptual and experimental toolbox to explore the quantum world. Here we demonstrate single-shot variable-strength weak measurements of the electron and the nuclear spin states of a single $^{31}$P donor in silicon. We first show how the partial collapse of the nuclear spin due to measurement can be used to coherently rotate the spin to a desired pure state. We explicitly demonstrate that phase coherence is preserved throughout multiple sequential single-shot weak measurements, and that the partial state collapse can be reversed. Second, we use the relation between measurement strength and perturbation of the nuclear state as a physical meter to extract the tunneling rates between the $^{31}$P donor and a nearby electron reservoir from data, conditioned on observing no tunneling events. Our experiments open avenues to measurement-based state preparation, steering and feedback protocols for spin systems in the solid state, and highlight the fundamental connection between information gain and state modification in quantum mechanics. △ Less

Submitted 26 February, 2017; originally announced February 2017.

Comments: 6 pages main text + 3 pages supplementary

Journal ref: Phys. Rev. B 98, 155201 (2018)

A single-atom quantum memory in silicon

Authors: S. Freer, S. Simmons, A. Laucht, J. T. Muhonen, J. P. Dehollain, R. Kalra, F. A. Mohiyaddin, F. Hudson, K. M. Itoh, J. C. McCallum, D. N. Jamieson, A. S. Dzurak, A. Morello

Abstract: Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coex… ▽ More Long coherence times and fast gate operations are desirable but often conflicting requirements for physical qubits. This conflict can be resolved by resorting to fast qubits for operations, and by storing their state in a `quantum memory' while idle. The $^{31}$P donor in silicon comes naturally equipped with a fast qubit (the electron spin) and a long-lived qubit (the $^{31}$P nuclear spin), coexisting in a bound state at cryogenic temperatures. Here, we demonstrate storage and retrieval of quantum information from a single donor electron spin to its host phosphorus nucleus in isotopically-enriched $^{28}$Si. The fidelity of the memory process is characterised via both state and process tomography. We report an overall process fidelity of $F_p =$81${\pm}$7%, a memory fidelity ($F_m$) of over 90%, and memory storage times up to 80 ms. These values are limited by a transient shift of the electron spin resonance frequency following high-power radiofrequency pulses. △ Less

Submitted 5 September, 2016; v1 submitted 25 August, 2016; originally announced August 2016.

Comments: 14 pages, 6 figures. v2 has minor cosmetic improvements, and 11 additional references

Breaking the rotating wave approximation for a strongly-driven, dressed, single electron spin

Authors: Arne Laucht, Stephanie Simmons, Rachpon Kalra, Guilherme Tosi, Juan P. Dehollain, Juha T. Muhonen, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency… ▽ More We investigate the dynamics of a strongly-driven, microwave-dressed, donor-bound electron spin qubit in silicon. A resonant oscillating magnetic field $B_1$ is used to dress the electron spin and create a new quantum system with a level splitting proportional to $B_1$. The dressed two-level system can then be driven by modulating the detuning $Δν$ between the microwave source frequency $ν_{\rm MW}$ and the electron spin transition frequency $ν_e$ at the frequency of the level splitting. The resulting dressed qubit Rabi frequency $Ω_{Rρ}$ is defined by the modulation amplitude, which can be made comparable to the level splitting using frequency modulation on the microwave source. This allows us to investigate the regime where the rotating wave approximation breaks down, without requiring microwave power levels that would be incompatible with a cryogenic environment. We observe clear deviations from normal Rabi oscillations and can numerically simulate the time evolution of the states in excellent agreement with the experimental data. △ Less

Submitted 1 September, 2016; v1 submitted 7 June, 2016; originally announced June 2016.

Journal ref: Phys. Rev. B 94, 161302 (2016)

A Dressed Spin Qubit in Silicon

Authors: Arne Laucht, Rachpon Kalra, Stephanie Simmons, Juan P. Dehollain, Juha T. Muhonen, Fahd A. Mohiyaddin, Solomon Freer, Fay E. Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, A. Morello

Abstract: Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed sp… ▽ More Coherent dressing of a quantum two-level system provides access to a new quantum system with improved properties - a different and easily tuneable level splitting, faster control, and longer coherence times. In our work we investigate the properties of the dressed, donor-bound electron spin in silicon, and probe its potential for the use as quantum bit in scalable architectures. The two dressed spin-polariton levels constitute a quantum bit that can be coherently driven with an oscillating magnetic field, an oscillating electric field, by frequency modulating the driving field, or by a simple detuning pulse. We measure coherence times of $T_{2ρ}^*=2.4$ ms and $T_{2ρ}^{\rm Hahn}=9$ ms, one order of magnitude longer than those of the undressed qubit. Furthermore, the use of the dressed states enables coherent coupling of the solid-state spins to electric fields and mechanical oscillations. △ Less

Submitted 15 March, 2016; originally announced March 2016.

Stimulated emission from NV centres in diamond

Authors: Jan Jeske, Desmond W. M. Lau, Liam P. McGuinness, Philip Reineck, Brett C. Johnson, Jeffrey C. McCallum, Fedor Jelezko, Thomas Volz, Jared H. Cole, Brant C. Gibson, Andrew D. Greentree

Abstract: Stimulated emission is the process fundamental to laser operation, thereby producing coherent photon output. Despite negatively-charged nitrogen-vacancy (NV$^-$) centres being discussed as a potential laser medium since the 1980's, there have been no definitive observations of stimulated emission from ensembles of NV$^-$ to date. Reasons for this lack of demonstration include the short excited sta… ▽ More Stimulated emission is the process fundamental to laser operation, thereby producing coherent photon output. Despite negatively-charged nitrogen-vacancy (NV$^-$) centres being discussed as a potential laser medium since the 1980's, there have been no definitive observations of stimulated emission from ensembles of NV$^-$ to date. Reasons for this lack of demonstration include the short excited state lifetime and the occurrence of photo-ionisation to the neutral charge state by light around the zero-phonon line. Here we show both theoretical and experimental evidence for stimulated emission from NV$^-$ states using light in the phonon-sidebands. Our system uses a continuous wave pump laser at 532 nm and a pulsed stimulating laser that is swept across the phononic sidebands of the NV$^-$. Optimal stimulated emission is demonstrated in the vicinity of the three-phonon line at 700 nm. Furthermore, we show the transition from stimulated emission to photoionisation as the stimulating laser wavelength is reduced from 700nm to 620 nm. While lasing at the zero-phonon line is suppressed by ionisation, our results open the possibility of diamond lasers based on NV centres, tuneable over the phonon-sideband. This broadens the applications of NV magnetometers from single centre nanoscale sensors to a new generation of ultra-precise ensemble laser sensors, which exploit the contrast and signal amplification of a lasing system. △ Less

Submitted 24 February, 2016; originally announced February 2016.

Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures

Authors: L. H. Willems van Beveren, R. Liu, H. Bowers, K. Ganesan, B. C. Johnson, J. C. McCallum, S. Prawer

Abstract: Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve do** densities of 6 at.%. In order to quantify the diamond crystal dama… ▽ More Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase transition. Here we demonstrate that high-fluence MeV ion-implantation, at elevated temperatures avoids graphitization and can be used to achieve do** densities of 6 at.%. In order to quantify the diamond crystal damage associated with implantation Raman spectroscopy was performed, demonstrating high temperature annealing recovers the lattice. Additionally, low-temperature electronic transport measurements show evidence of charge carrier densities close to the metal-insulator-transition. After electronic characterization, secondary ion mass spectrometry was performed to map out the ion profile of the implanted plates. The analysis shows close agreement with the simulated ion-profile assuming scaling factors that take into account an average change in diamond density due to device fabrication. Finally, the data show that boron diffusion is negligible during the high temperature annealing process. △ Less

Submitted 20 June, 2016; v1 submitted 30 January, 2016; originally announced February 2016.

Comments: 22 pages, 6 figures, submitted to JAP

Journal ref: Journal of Applied Physics 119, 223902 (2016)

Bell's inequality violation with spins in silicon

Authors: Juan P. Dehollain, Stephanie Simmons, Juha T. Muhonen, Rachpon Kalra, Arne Laucht, Fay Hudson, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagge… ▽ More Bell's theorem sets a boundary between the classical and quantum realms, by providing a strict proof of the existence of entangled quantum states with no classical counterpart. An experimental violation of Bell's inequality demands simultaneously high fidelities in the preparation, manipulation and measurement of multipartite quantum entangled states. For this reason the Bell signal has been tagged as a single-number benchmark for the performance of quantum computing devices. Here we demonstrate deterministic, on-demand generation of two-qubit entangled states of the electron and the nuclear spin of a single phosphorus atom embedded in a silicon nanoelectronic device. By sequentially reading the electron and the nucleus, we show that these entangled states violate the Bell/CHSH inequality with a Bell signal of 2.50(10). An even higher value of 2.70(9) is obtained by map** the parity of the two-qubit state onto the nuclear spin, which allows for high-fidelity quantum non-demolition measurement (QND) of the parity. Furthermore, we complement the Bell inequality entanglement witness with full two-qubit state tomography exploiting QND measurement, which reveals that our prepared states match the target maximally entangled Bell states with $>$96\% fidelity. These experiments demonstrate complete control of the two-qubit Hilbert space of a phosphorus atom, and show that this system is able to maintain its simultaneously high initialization, manipulation and measurement fidelities past the single-qubit regime. △ Less

Submitted 13 April, 2015; originally announced April 2015.

Comments: 10 pages, 3 figures, 1 table, 4 extended data figures

Single-photon emitting diode in silicon carbide

Authors: A. Lohrmann, N. Iwamoto, Z. Bodrog, S. Castelletto, T. Ohshima, T. J. Karle, A. Gali, S. Prawer, J. C. McCallum, B. C. Johnson

Abstract: Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon… ▽ More Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide (SiC) an ideal material to build such devices. Here, we demonstrate the fabrication of bright single photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of $>$300 kHz), and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single photon source is proposed. These results provide a foundation for the large scale integration of single photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing. △ Less

Submitted 21 May, 2015; v1 submitted 25 March, 2015; originally announced March 2015.

Comments: Main: 10 pages, 6 figures. Supplementary Information: 6 pages, 6 figures

Electrically controlling single spin qubits in a continuous microwave field

Authors: Arne Laucht, Juha T. Muhonen, Fahd A. Mohiyaddin, Rachpon Kalra, Juan P. Dehollain, Solomon Freer, Fay E. Hudson, Menno Veldhorst, Rajib Rahman, Gerhard Klimeck, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electr… ▽ More Large-scale quantum computers must be built upon quantum bits that are both highly coherent and locally controllable. We demonstrate the quantum control of the electron and the nuclear spin of a single 31P atom in silicon, using a continuous microwave magnetic field together with nanoscale electrostatic gates. The qubits are tuned into resonance with the microwave field by a local change in electric field, which induces a Stark shift of the qubit energies. This method, known as A-gate control, preserves the excellent coherence times and gate fidelities of isolated spins, and can be extended to arbitrarily many qubits without requiring multiple microwave sources. △ Less

Submitted 19 March, 2015; originally announced March 2015.

Comments: Main paper: 13 pages, 4 figures. Supplementary information: 25 pages, 13 figures

Journal ref: Science Advances 1, 1500022 (2015)

Quantifying the quantum gate fidelity of single-atom spin qubits in silicon by randomized benchmarking

Authors: J. T. Muhonen, A. Laucht, S. Simmons, J. P. Dehollain, R. Kalra, F. E. Hudson, S. Freer, K. M. Itoh, D. N. Jamieson, J. C. McCallum, A. S. Dzurak, A. Morello

Abstract: Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically p… ▽ More Building upon the demonstration of coherent control and single-shot readout of the electron and nuclear spins of individual 31-P atoms in silicon, we present here a systematic experimental estimate of quantum gate fidelities using randomized benchmarking of 1-qubit gates in the Clifford group. We apply this analysis to the electron and the ionized 31-P nucleus of a single P donor in isotopically purified 28-Si. We find average gate fidelities of 99.95 % for the electron, and 99.99 % for the nuclear spin. These values are above certain error correction thresholds, and demonstrate the potential of donor-based quantum computing in silicon. By studying the influence of the shape and power of the control pulses, we find evidence that the present limitation to the gate fidelity is mostly related to the external hardware, and not the intrinsic behaviour of the qubit. △ Less

Submitted 8 October, 2014; originally announced October 2014.

Journal ref: J. Phys.: Condens. Matter 27 (2015) 154205

Storing quantum information for 30 seconds in a nanoelectronic device

Authors: Juha T. Muhonen, Juan P. Dehollain, Arne Laucht, Fay E. Hudson, Takeharu Sekiguchi, Kohei M. Itoh, David N. Jamieson, Jeffrey C. McCallum, Andrew S. Dzurak, Andrea Morello

Abstract: The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxide… ▽ More The spin of an electron or a nucleus in a semiconductor [1] naturally implements the unit of quantum information -- the qubit -- while providing a technological link to the established electronics industry [2]. The solid-state environment, however, may provide deleterious interactions between the qubit and the nuclear spins of surrounding atoms [3], or charge and spin fluctuators in defects, oxides and interfaces [4]. For group IV materials such as silicon, enrichment of the spin-zero 28-Si isotope drastically reduces spin-bath decoherence [5]. Experiments on bulk spin ensembles in 28-Si crystals have indeed demonstrated extraordinary coherence times [6-8]. However, it remained unclear whether these would persist at the single-spin level, in gated nanostructures near amorphous interfaces. Here we present the coherent operation of individual 31-P electron and nuclear spin qubits in a top-gated nanostructure, fabricated on an isotopically engineered 28-Si substrate. We report new benchmarks for coherence time (> 30 seconds) and control fidelity (> 99.99%) of any single qubit in solid state, and perform a detailed noise spectroscopy [9] to demonstrate that -- contrary to widespread belief -- the coherence is not limited by the proximity to an interface. Our results represent a fundamental advance in control and understanding of spin qubits in nanostructures. △ Less

Submitted 28 February, 2014; originally announced February 2014.

Journal ref: Nature Nanotechnology 9, 986 (2014)

High-fidelity adiabatic inversion of a $^{31}\mathrm{P}$ electron spin qubit in natural silicon

Authors: Arne Laucht, Rachpon Kalra, Juha T. Muhonen, Juan P. Dehollain, Fahd A. Mohiyaddin, Fay Hudson, Jeffrey C. McCallum, David N. Jamieson, Andrew S. Dzurak, Andrea Morello

Abstract: The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses.… ▽ More The main limitation to the high-fidelity quantum control of spins in semiconductors is the presence of strongly fluctuating fields arising from the nuclear spin bath of the host material. We demonstrate here a substantial improvement in single-qubit gate fidelities for an electron spin qubit bound to a $^{31}$P atom in natural silicon, by applying adiabatic inversion instead of narrow-band pulses. We achieve an inversion fidelity of 97%, and we observe signatures in the spin resonance spectra and the spin coherence time that are consistent with the presence of an additional exchange-coupled donor. This work highlights the effectiveness of adiabatic inversion techniques for spin control in fluctuating environments. △ Less

Submitted 17 December, 2013; originally announced December 2013.

Comments: 4 pages, 2 figures

Optical addressing of an individual erbium ion in silicon

Authors: Chunming Yin, Milos Rancic, Gabriele G. de Boo, Nikolas Stavrias, Jeffrey C. McCallum, Matthew J. Sellars, Sven Rogge

Abstract: The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond u… ▽ More The detection of electron spins associated with single defects in solids is a critical operation for a range of quantum information and measurement applications currently under development. To date, it has only been accomplished for two centres in crystalline solids: phosphorus in silicon using electrical readout based on a single electron transistor (SET) and nitrogen-vacancy centres in diamond using optical readout. A spin readout fidelity of about 90% has been demonstrated with both electrical readout and optical readout, however, the thermal limitations of the electrical readout and the poor photon collection efficiency of the optical readout hinder achieving the high fidelity required for quantum information applications. Here we demonstrate a hybrid approach using optical excitation to change the charge state of the defect centre in a silicon-based SET, conditional on its spin state, and then detecting this change electrically. The optical frequency addressing in high spectral resolution conquers the thermal broadening limitation of the previous electrical readout and charge sensing avoids the difficulties of efficient photon collection. This is done with erbium in silicon and has the potential to enable new architectures for quantum information processing devices and to dramatically increase the range of defect centres that can be exploited. Further, the efficient electrical detection of the optical excitation of single sites in silicon is a major step in develo** an interconnect between silicon and optical based quantum computing technologies. △ Less

Submitted 9 April, 2013; v1 submitted 8 April, 2013; originally announced April 2013.

Comments: Corrected the third affiliation. Corrected one cross-reference of "Fig. 3b" to "Fig. 3c". Corrected the caption of Fig. 3a by changing (+-)1 to 0

Journal ref: Nature 497, 91 (2013)

Progress Towards Opto-Electronic Characterization of Indium Phosphide Nanowire Transistors at milli-Kelvin temperatures

Authors: Laurens H. Willems van Beveren, Jeffrey C. McCallum, Hoe H. Tan, Chennupati Jagadish

Abstract: In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diod… ▽ More In this paper we present our progress towards the opto-electronic characterization of indium phosphide (InP) nanowire transistors at milli-Kelvin (mK) temperatures. First, we have investigated the electronic transport of the InP nanowires by current-voltage (I-V) spectroscopy as a function of temperature from 300 K down to 40 K. Second, we show the successful operation of a red light emitting diode (LED) at liquid-Helium (and base) temperature to be used for opto-electronic device characterization. △ Less

Submitted 11 March, 2013; originally announced March 2013.

Comments: 2 pages Optoelectronic and Microelectronic Materials & Devices (COMMAD), 2012 Conference

Engineering chromium related single photon emitters in single crystal diamond

Authors: I Aharonovich, S Castelletto, B C Johnson, J C McCallum, S Prawer

Abstract: Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium related centers are particularly attractive since they possess narrow bandwidth emission and a very short lifetime. In this paper we investigate the fabrication methodologies to engineer these centers in m… ▽ More Color centers in diamond as single photon emitters, are leading candidates for future quantum devices due to their room temperature operation and photostability. The recently discovered chromium related centers are particularly attractive since they possess narrow bandwidth emission and a very short lifetime. In this paper we investigate the fabrication methodologies to engineer these centers in monolithic diamond. We show that the emitters can be successfully fabricated by ion implantation of chromium in conjunction with oxygen or sulfur. Furthermore, our results indicate that the background nitrogen concentration is an important parameter, which governs the probability of success to generate these centers. △ Less

Submitted 29 September, 2010; originally announced September 2010.

Comments: 14 pages, 5 figures

Dopant-enhanced solid phase epitaxy in buried amorphous silicon layers

Authors: B. C. Johnson, J. C. McCallum

Abstract: The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us… ▽ More The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) are stud- ied in buried amorphous Si (a-Si) layers in which SPE is not retarded by H. As, P, B and Al profiles were formed by multiple energy ion implantation over a con- centration range of 1 - 30 x 1019 /cm3. Anneals were performed in air over the temperature range 460-660 oC and the rate of interface motion was monitored us- ing time resolved reflectivity. The dopant-enhanced SPE rates were modeled with the generalized Fermi level shifting model using degenerate semiconductor statis- tics. The effect of band bending between the crystalline and amorphous sides of the interface is also considered. △ Less

Submitted 30 July, 2010; originally announced July 2010.

Comments: 45 pages, 15 figures, 2 tables, accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 76, 045216 (2007)

Intrinsic and dopant enhanced solid phase epitaxy in amorphous germanium

Authors: B. C. Johnson, P. Gortmaker, J. C. McCallum

Abstract: The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR) system between 300 and 540 degC and found to have an activation energy of (2.15 +/- 0.04) eV. To interpret the TRR measurements the refractive indices of the a… ▽ More The kinetics of intrinsic and dopant-enhanced solid phase epitaxy (SPE) is stud- ied in amorphous germanium (a-Ge) layers formed by ion implantation on <100> Ge substrates. The SPE rates were measured with a time-resolved reflectivity (TRR) system between 300 and 540 degC and found to have an activation energy of (2.15 +/- 0.04) eV. To interpret the TRR measurements the refractive indices of the a-Ge layers were measured at the two wavelengths used, 1.152 and 1.532 μm. For the first time, SPE rate measurements on thick a-Ge layers (>3 μm) have also been performed to distinguish between bulk and near-surface SPE growth rate behavior. Possible effects of explosive crystallization on thick a-Ge layers are considered. When H is present in a-Ge it is found to have a considerably greater retarding affect on the SPE rate than for similar concentrations in a-Si layers. Hydrogen is found to reduce the pre-exponential SPE velocity factor but not the activation energy of SPE. However, the extent of H indiffusion into a-Ge surface layers during SPE is about one order of magnitude less that that observed for a-Si layers. This is thought to be due to the lack of a stable surface oxide on a-Ge. Dopant enhanced kinetics were measured in a-Ge layers containing uniform concentration profiles of implanted As or Al spanning the concentration regime 1-10 x1019 /cm-3. Dopant compensation effects are also observed in a-Ge layers containing equal concentrations of As and Al, where the SPE rate is similar to the intrinsic rate. Various SPE models are considered in light of these data. △ Less

Submitted 29 July, 2010; originally announced July 2010.

Comments: 42 pages, 10 figures, 1 table, accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 77, 214109 (2008)

Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport

Authors: B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren, E. Gauja

Abstract: A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors.… ▽ More A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors for spin-dependent transport experiments is presented. Standard annealing strategies are considered to activate the implanted dopants and repair the implantation damage in test metal-oxide-semiconductor (MOS) capacitors. Fixed oxide charge, interface trapped charge and the role of minority carriers in DLTS are investigated. A furnace anneal at 950 $\rm ^{o}$C was found to activate the dopants but did not repair the implantation damage as efficiently as a 1000 $\rm ^{o}$C rapid thermal anneal. No evidence of bulk traps was observed after either of these anneals. The ion- implanted spin-dependent transport device is shown to have expected characteristics using the processing strategy determined in this study. △ Less

Submitted 26 February, 2010; originally announced February 2010.

Comments: 4 pages, 6 figures

Journal ref: Thin Solid Films 518 (2010) 2524-2527

ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface

Authors: Paul G. Spizzirri, Wayne D. Hutchison, Nikolas Stavrias, Jeffrey C. McCallum, Nakorn Suwuntanasarn, Libu K. Alexander, Steven Prawer

Abstract: This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the… ▽ More This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity to the Si-SiO2 interface. Electrical measurements, which were used to estimate donor activation levels, reported high implant recoveries when using 14 keV phosphorus ions however, it was not possible to correlate the intensity of the hyperfine resonance signal with the electrical measurements in the presence of an SiO2 interface due to donor state ionisation (i.e. compensation effects). Comparative measurements made on silicon with an H-passivated surface reported higher donor hyperfine signal levels consistent with lower surface defect densities at the interface. △ Less

Submitted 8 February, 2010; originally announced February 2010.

Comments: 13 pages, 5 figures, regular paper

Chromium single photon emitters in diamond fabricated by ion implantation

Authors: Igor Aharonovich, Stefania Castelletto, Brett C. Johnson, Jeffrey C. McCallum, David A. Simpson, Andrew D. Greentree, Steven Prawer

Abstract: Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a ZPL centered at 749 nm, FWHM of 4 nm, an extremely short lifetime of ~1 ns, and a count rate… ▽ More Controlled fabrication and identification of bright single photon emitters is at the heart of quantum optics and materials science. Here we demonstrate a controlled engineering of a chromium bright single photon source in bulk diamond by ion implantation. The Cr center has fully polarized emission with a ZPL centered at 749 nm, FWHM of 4 nm, an extremely short lifetime of ~1 ns, and a count rate of 500 kcounts/s. By combining the polarization measurements and the vibronic spectra, a model of the center has been proposed consisting of one interstitial chromium atom with a transition dipole along one of the <100> directions. △ Less

Submitted 25 January, 2010; originally announced January 2010.

Journal ref: Phys Rev B Rapid 2010