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Emerging two-dimensional conductivity at Mott-band insulator interface
Authors:
I. V. Maznichenko,
S. Ostanin,
D. Maryenko,
V. K. Dugaev,
E. Ya. Sherman,
P. Buczek,
I. Mertig,
M. Kawasaki,
A. Ernst
Abstract:
Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, wh…
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Intriguingly conducting perovskite interfaces between ordinary band insulators are widely explored, whereas similar interfaces with Mott insulators are still not quite understood. Here we address the (001), (110), and (111) interfaces between the LaTiO$_{3}$ Mott- and large band gap KTaO$_{3}$ insulators. Based on first-principles calculations, we reveal a mechanism of interfacial conductivity, which is distinct from a formerly studied one applicable to interfaces between polar wide band insulators. Here the key factor causing conductivity is the matching of oxygen octahedra tilting in KTaO$_{3}$ and LaTiO$_{3}$ which, due to a small gap in the LaTiO$_{3}$ results in its sensitivity to the crystal structure, yields metalization of its overlayer and following charge transfer from Ti to Ta. Our findings, also applicable to other Mott insulators interfaces, shed light on the emergence of conductivity observed in LaTiO$_{3}$/KTaO$_{3}$~(110) where the ''polar`` arguments are not applicable and on the emergence of superconductivity in these structures.
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Submitted 30 January, 2024;
originally announced January 2024.
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Correlations, disorder, and multi-magnon processes in terahertz spin dynamics of magnetic nanostructures: A first-principles investigation
Authors:
S. Paischer,
D. Eilmsteiner,
I. Maznichenko,
N. Buczek,
Kh. Zakeri,
A. Ernst,
P. Buczek
Abstract:
Understanding the profound impact of correlation effects and crystal imperfections is essential for an accurate description of solids. Here we study the role of correlation, disorder, and multi-magnon processes in THz magnons. Our findings reveal that a significant part of the electron self-energy, which goes beyond the adiabatic local spin density approximation, arises from the interaction betwee…
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Understanding the profound impact of correlation effects and crystal imperfections is essential for an accurate description of solids. Here we study the role of correlation, disorder, and multi-magnon processes in THz magnons. Our findings reveal that a significant part of the electron self-energy, which goes beyond the adiabatic local spin density approximation, arises from the interaction between electrons and a virtual magnon gas. This interaction leads to a substantial modification of the exchange splitting and a renormalization of magnon energies, in agreement with the experimental data. We establish a quantitative hierarchy of magnon relaxation processes based on first principles.
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Submitted 6 May, 2024; v1 submitted 24 July, 2023;
originally announced July 2023.
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Superconductivity at epitaxial LaTiO3-KTaO3 interfaces
Authors:
D. Maryenko,
I. V. Maznichenko,
S. Ostanin,
M. Kawamura,
K. S. Takahashi,
M. Nakamura,
V. K. Dugaev,
E. Ya. Sherman,
A. Ernst,
M. Kawasaki
Abstract:
Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) cryst…
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Design of epitaxial interfaces is a pivotal way to engineer artificial structures where new electronic phases can emerge. Here we report a systematic emergence of interfacial superconducting state in epitaxial heterostructures of LaTiO3 and KTaO3. The superconductivity transition temperature increases with decreasing the thickness of LaTiO3. Such behavior is observed for both (110) and (111) crystal oriented structures. For thick samples, the finite resistance develo** below the superconducting transition temperature increases with increasing LaTiO3 thickness. Consistent with previous reports, the (001) oriented heterointerface features high electron mobility of 250 cm2/Vs and shows no superconducting transition down to 40 mK. Our results imply a non-trivial impact of LaTiO3 on the superconducting state and indicate how superconducting KTaO3 interfaces can be integrated with other oxide materials.
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Submitted 14 May, 2023;
originally announced May 2023.
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Gate-tuneable and chirality-dependent charge-to-spin conversion in Tellurium nanowires
Authors:
Francesco Calavalle,
Manuel Suárez-Rodríguez,
Beatriz Martín-García,
Annika Johansson,
Diogo C. Vaz,
Haozhe Yang,
Igor V. Maznichenko,
Sergey Ostanin Aurelio Mateo-Alonso,
Andrey Chuvilin,
Ingrid Mertig,
Marco Gobbi,
Fèlix Casanova,
Luis E. Hueso
Abstract:
Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as…
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Chiral materials are the ideal playground for exploring the relation between symmetry, relativistic effects, and electronic transport. For instance, chiral organic molecules have been intensively studied to electrically generate spin-polarized currents in the last decade, but their poor electronic conductivity limits their potential for applications. Conversely, chiral inorganic materials such as Tellurium are excellent electrical transport materials, but have not been explored to enable the electrical control of spin polarization in devices. Here, we demonstrate the all-electrical generation, manipulation, and detection of spin polarization in chiral single-crystalline Tellurium nanowires. By recording a large (up to 7%) and chirality-dependent unidirectional magnetoresistance, we show that the orientation of the electrically generated spin polarization is determined by the nanowire handedness and uniquely follows the current direction, while its magnitude can be manipulated by an electrostatic gate. Our results pave the way for the development of magnet-free chirality-based spintronic devices.
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Submitted 2 January, 2022;
originally announced January 2022.
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Externally controlled and switchable 2D electron gas at the Rashba interface between ferroelectrics and heavy $d$ metals
Authors:
Thorsten Aull,
Igor V. Maznichenko,
Sergey Ostanin,
Ersoy Şaşıoğlu,
Ingrid Mertig
Abstract:
Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrath…
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Strong spin-orbit coupling in noncentrosymmetric materials and interfaces results in remarkable physical phenomena, such as nontrivial spin textures, which may exhibit Rashba, Dresselhaus, and other intricated configurations. This provides a promising basis for nonvolatile spintronic devices and further implications. Here, we simulate from first principles a two-dimensional electron gas in ultrathin platinum and palladium layers grown on ferroelectric PbTiO$_3$(001). The latter allows, in principle, to switch and control the spin-to-charge conversion by the polarization reversal. We show how the band structure and its Rashba splitting differ in the Pt and Pd overlayers and how these electronic features change with increasing the overlayer thickness and upon reversal of polarization. Besides, for both overlayers, we simulated their current-voltage ($I-V$) characteristics, the resistance of which upon the polarization reversal changes between 20% and several hundred percent. The reported findings can be used to model directly the Rashba-Edelstein effect.
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Submitted 8 November, 2021; v1 submitted 5 November, 2021;
originally announced November 2021.
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Nonlinear Decay of Quantum Confined Magnons in Itinerant Ferromagnets
Authors:
Kh. Zakeri,
A. Hjelt,
I. V. Maznichenko,
P. Buczek,
A. Ernst
Abstract:
Quantum confinement leads to the emergence of several magnon modes in ultrathin layered magnetic structures. We probe the lifetime of these quantum confined modes in a model system composed of three atomic layers of Co grown on different surfaces. We demonstrate that the quantum confined magnons exhibit nonlinear decay rates, which strongly depend on the mode number, in sharp contrast to what is a…
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Quantum confinement leads to the emergence of several magnon modes in ultrathin layered magnetic structures. We probe the lifetime of these quantum confined modes in a model system composed of three atomic layers of Co grown on different surfaces. We demonstrate that the quantum confined magnons exhibit nonlinear decay rates, which strongly depend on the mode number, in sharp contrast to what is assumed in the classical dynamics. Combining the experimental results with those of linear-response density functional calculations we provide a quantitative explanation for this nonlinear dam** effect. The results provide new insights into the decay mechanism of spin excitations in ultrathin films and multilayers and pave the way for tuning the dynamical properties of such structures.
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Submitted 9 February, 2021;
originally announced February 2021.
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Atomic scale spectral control of thermal transport in phononic crystal superlattices
Authors:
D. Meyer,
V. Roddatis,
J. P. Bange,
S. Lopatin,
M. Keunecke,
D. Metternich,
U. Roß,
I. V. Maznichenko,
S. Ostanin,
I. Mertig,
V. Radisch,
R. Egoavil,
I. Lazić,
V. Moshnyaga,
H. Ulrichs
Abstract:
We present experimental and theoretical investigations of phonon thermal transport in (LaMnO$_3$)$_m$/(SrMnO$_3$)$_n$ superlattices (LMO/SMO SLs) with the thickness of individual layers $m,n = 3 - 10\;$ u.c. and the thickness ratio $m/n = 1, 2$. Optical transient thermal reflectivity measurements reveal a pronounced difference in the thermal conductivity between SLs with $m/n = 1$, and SLs with…
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We present experimental and theoretical investigations of phonon thermal transport in (LaMnO$_3$)$_m$/(SrMnO$_3$)$_n$ superlattices (LMO/SMO SLs) with the thickness of individual layers $m,n = 3 - 10\;$ u.c. and the thickness ratio $m/n = 1, 2$. Optical transient thermal reflectivity measurements reveal a pronounced difference in the thermal conductivity between SLs with $m/n = 1$, and SLs with $m/n = 2$. State-of-the art electron microscopy techniques and ab-initio density functional calculations enables us to assign the origin of this difference to the absence ($m/n = 1$) or presence ($m/n = 2$) of spatially periodic, static oxygen octahedral rotation (OOR) inside the LMO layers. The experimental data analysis shows that the effective thermal conductance of the LMO/SMO interfaces strongly changes from $0.3$ GW/m$^2$K for $m/n = 2$ SLs with OOR to a surprisingly large value of $1.8$ GW/m$^2$K for $m/n = 1$ SLs without OOR. An instructive lattice dynamical model rationalizes our experimental findings as a result of coherent phonon transmission for $m/n = 1$ versus coherent phonon blocking in SLs with $m/n = 2$. We briefly discuss the possibilities to exploit these results for atomic-scale engineering of a crystalline phonon insulator. The thermal resistivity of this proposal for a thermal metamaterial surpasses the amorphous limit, although phonons still propagate coherently.
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Submitted 12 July, 2021; v1 submitted 30 September, 2020;
originally announced September 2020.
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Perovskite-type cobalt oxide at the multiferroic Co/Pb Zr$_{0.2}$Ti$_{0.8}$O$_{3}$ interface
Authors:
K. Mohseni,
A. Polyakov,
H. B. Vasili,
I. V. Maznichenko,
S. Ostanin,
A. Quindeau,
N. Jedrecy,
E. Fonda,
L. V. Bekenov,
V. N. Antonov,
P. Gargani,
M. Valvidares,
I. Mertig,
S. S. P. Parkin,
A. Ernst,
H. L. Meyerheim
Abstract:
Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue f…
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Magnetic Tunnel Junctions whose basic element consists of two ferromagnetic electrodes separated by an insulating non-magnetic barrier have become intensely studied and used in non-volatile spintronic devices. Since ballistic tunnel of spin-polarized electrons sensitively depends on the chemical composition and the atomic geometry of the lead/barrier interfaces their proper design is a key issue for achieving the required functionality of the devices such as e.g. a high tunnel magneto resistance. An important leap in the development of novel spintronic devices is to replace the insulating barrier by a ferroelectric which adds new additional functionality induced by the polarization direction in the barrier giving rise to the tunnel electro resistance (TER). The multiferroic tunnel junction Co/PbZr$_{0.2}$Ti$_{0.8}$O$_{3}$/La$_{2/3}$Sr$_{1/3}$MnO$_3$ (Co/PZT/LSMO) represents an archetype system for which - despite intense studies - no consensus exists for the interface geometry and their effect on transport properties. Here we provide the first analysis of the Co/PZT interface at the atomic scale using complementary techniques, namely x-ray diffraction and extended x-ray absorption fine structure in combination with x-ray magnetic circular dichroism and ab-initio calculations. The Co/PZT interface consists of one perovskite-type cobalt oxide unit cell [CoO$_{2}$/CoO/Ti(Zr)O$_{2}$] on which a locally ordered cobalt film grows. Magnetic moments (m) of cobalt lie in the range between m=2.3 and m=2.7$μ_{B}$, while for the interfacial titanium atoms they are small (m=+0.005 $μ_{B}$) and parallel to cobalt which is attributed to the presence of the cobalt-oxide interface layers. These insights into the atomistic relation between interface and magnetic properties is expected to pave the way for future high TER devices.
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Submitted 1 April, 2020;
originally announced April 2020.
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Ab initio design of quaternary Heusler compounds for reconfigurable magnetic tunnel diodes and transistors
Authors:
T. Aull,
E. Şaşıoğlu,
I. V. Maznichenko,
S. Ostanin,
A. Ernst,
I. Mertig,
I. Galanakis
Abstract:
Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with simil…
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Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and identify suitable candidates for these spintronic devices combining the desirable properties: (i) HMMs with sizable energy gap or SGSs with spin gaps both below and above the Fermi level, (ii) high Curie temperature, (iii) convex hull energy distance less than 0.20 eV, and (iv) negative formation energies. Our results pave the way for the experimental realization of the proposed magnetic tunnel diodes and transistors.
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Submitted 20 January, 2020;
originally announced January 2020.
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The optical tweezer of ferroelectric skyrmions
Authors:
X. -G. Wang,
L. Chotorlishvili,
V. K. Dugaev,
A. Ernst,
I. Maznichenko,
N. Arnold,
Chenglong Jia,
J. Berakdar,
I. Mertig,
J. Barnaś
Abstract:
Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field…
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Strong magneto-electric coupling in two-dimensional helical materials leads to a peculiar type of topologically protected solutions -- skyrmions. Coupling between the net ferroelectric polarization and magnetization allows control of the magnetic texture with an external electric field. In this work we propose the model of optical tweezer -- a particular configuration of an external electric field and Gaussian laser beam that can trap or release the skyrmions in a highly controlled manner. Functionality of such a tweezer is visualized by micromagnetic simulations and model analysis.
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Submitted 6 January, 2020;
originally announced January 2020.
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Termination control of magnetic coupling at a complex oxide interface
Authors:
S. Das,
A. D. Rata,
I. V. Maznichenko,
S. Agrestini,
E. Pippel,
K. Chen,
S. M. Valvidares,
H. Babu Vasili,
J. Herrero-Martin,
E. Pellegrin,
K. Nenkov,
A. Herklotz,
A. Ernst,
I. Mertig,
Z. Hu,
K. Doerr
Abstract:
Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). H…
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Atomically flat interfaces between ternary oxides have chemically different variants, depending on the terminating lattice planes of both oxides. Electronic properties change with the interface termination which affects, for instance, charge accumulation and magnetic interactions at the interface. Well-defined terminations have yet rarely been achieved for oxides of ABO3 type (with metals A, B). Here, we report on a strategy of thin film growth and interface characterization applied to fabricate the La0.7Sr0.3MnO3-SrRuO3 interface with controlled termination. Ultra-strong antiferromagnetic coupling between the ferromagnets occurs at the MnO2-SrO interface, but not for the other termination, in agreement with density functional calculations. X-ray magnetic circular dichroism measurements reveal coupled reversal of Mn and Ru magnetic moments at the MnO2-SrO interface. Our results demonstrate termination control of magnetic coupling across a complex oxide interface and provide a pathway for theoretical and experimental explorations of novel electronic interface states with engineered magnetic properties.
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Submitted 28 June, 2016;
originally announced June 2016.
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Impact of oxygen do** and oxidation state of iron on the electronic and magnetic properties of BaFeO$_{3-δ}
Authors:
I. V. Maznichenko,
S. Ostanin,
L. V. Bekenov,
V. N. Antonov,
I. Mertig,
A. Ernst
Abstract:
We studied structural, electronic and magnetic properties of a cubic perovskite BaFeO$_{3-δ}$ ($0 \le δ\le 0.5$) within the density functional theory using a generalized gradient approximation and a GGA+U method. According to our calculations, BaFeO$_3$ in its stoichiometric cubic structure should be half-metallic and strongly ferromagnetic, with extremely high Curie temperature ($T_C$) of 700 - 9…
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We studied structural, electronic and magnetic properties of a cubic perovskite BaFeO$_{3-δ}$ ($0 \le δ\le 0.5$) within the density functional theory using a generalized gradient approximation and a GGA+U method. According to our calculations, BaFeO$_3$ in its stoichiometric cubic structure should be half-metallic and strongly ferromagnetic, with extremely high Curie temperature ($T_C$) of 700 - 900 K. However, a such estimate of $T_C$ disagrees with all available experiments, which report that $T_C$ of the BaFeO$_3$ and undoped BaFeO$_{3-δ}$ films varies between 111 K and 235 K or, alternatively, that no ferromagnetic order was detected there. Fitting the calculated x-ray magnetic circular dichroism spectra to the experimental features seen for BaFeO$_3$, we concluded that the presence of oxygen vacancies in our model enables a good agreement. Thus, the relatively low $T_C$ measured in BaFeO$_3$ can be explained by oxygen vacancies intrinsically presented in the material. Since iron species near the O vacancy change their oxidation state from $4+$ to $3+$, the interaction between Fe$^{4+}$ and Fe$^{3+}$, which is antiferromagnetic, weakens the effective magnetic interaction in the system, which is predominantly ferromagnetic. With increasing $δ$ in BaFeO$_{3-δ}$, its $T_C$ decreases down to the critical value when the magnetic order becomes antiferromagnetic. Our calculations of the electronic structure of BaFeO$_{3-δ}$ illustrate how the ferromagnetism originates and also how one can keep this cubic perovskite robustly ferromagnetic far above the room temperature.
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Submitted 29 May, 2015;
originally announced May 2015.
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Study of electronic and magnetic properties and related x-ray absorption spectroscopy of ultrathin Co films on BaTiO$_3$
Authors:
M. Hoffmann,
St. Borek,
I. V. Maznichenko,
S. Ostanin,
G. Fischer,
M. Geilhufe,
W. Hergert,
I. Mertig,
A. Ernst,
A. Chassé
Abstract:
We present a first-principles study of electronic and magnetic properties of thin Co films on a BaTiO$_3$(001) single crystal. The crystalline structure of 1, 2, and 3 monolayer thick Co films was determined and served as input for calculations of the electronic and magnetic properties of the films. The estimation of exchange constants indicates that the Co films are ferromagnetic with a high crit…
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We present a first-principles study of electronic and magnetic properties of thin Co films on a BaTiO$_3$(001) single crystal. The crystalline structure of 1, 2, and 3 monolayer thick Co films was determined and served as input for calculations of the electronic and magnetic properties of the films. The estimation of exchange constants indicates that the Co films are ferromagnetic with a high critical temperature, which depends on the film thickness and the interface geometry. In addition, we calculated x-ray absorption spectra, related magnetic circular dichroism (XMCD) and linear dichroism (XLD) of the Co L$_{2,3}$ edges as a function of Co film thickness and ferroelectric polarization of BaTiO$_3$. We found characteristic features, which depend strongly on the magnetic properties and the structure of the film. While there is only a weak dependence of XMCD spectra on the ferroelectric polarization, the XLD of the films is much more sensitive to the polarization switching, which could possibly be observed experimentally.
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Submitted 29 May, 2015; v1 submitted 27 May, 2015;
originally announced May 2015.
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Exchange interaction and its tuning in magnetic binary chalcogenides
Authors:
M. G. Vergniory,
D. Thonig,
M. Hoffmann,
I. V. Maznichenko,
M. Geilhufe,
M. M. Otrokov,
X. Zubizarreta,
S. Ostanin,
A. Marmodoro,
J. Henk,
W. Hergert,
I. Mertig,
E. V. Chulkov,
A. Ernst
Abstract:
Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the in…
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Using a first-principles Green's function approach we study magnetic properties of the magnetic binary chalcogenides Bi2Te3, Bi2Se3, and Sb2Te3. The magnetic coupling between transition-metal impurities is long-range, extends beyond a quintuple layer, and decreases with increasing number of d electrons per 3d atom. We find two main mechanisms for the magnetic interaction in these materials: the indirect exchange interaction mediated by free carriers and the indirect interaction between magnetic moments via chalcogen atoms. The calculated Curie temperatures of these systems are in good agreement with available experimental data. Our results provide deep insight into magnetic interactions in magnetic binary chalcogenides and open a way to design new materials for promising applications.
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Submitted 27 June, 2013;
originally announced June 2013.
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Structural phase transitions and fundamental band gaps of Mg(x)Zn(1-x)O alloys from first principles
Authors:
I. V. Maznichenko,
A. Ernst,
M. Bouhassoune,
J. Henk,
M. Daene,
M. Lueders,
P. Bruno,
W. Hergert,
I. Mertig,
Z. Szotek,
W. M. Temmerman
Abstract:
The structural phase transitions and the fundamental band gaps of Mg(x)Zn(1-x)O alloys are investigated by detailed first-principles calculations in the entire range of Mg concentrations x, applying a multiple-scattering theoretical approach (Korringa-Kohn-Rostoker method). Disordered alloys are treated within the coherent potential approximation (CPA). The calculations for various crystal phase…
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The structural phase transitions and the fundamental band gaps of Mg(x)Zn(1-x)O alloys are investigated by detailed first-principles calculations in the entire range of Mg concentrations x, applying a multiple-scattering theoretical approach (Korringa-Kohn-Rostoker method). Disordered alloys are treated within the coherent potential approximation (CPA). The calculations for various crystal phases have given rise to a phase diagram in good agreement with experiments and other theoretical approaches. The phase transition from the wurtzite to the rock-salt structure is predicted at the Mg concentration of x = 0.33, which is close to the experimental value of 0.33 - 0.40. The size of the fundamental band gap, typically underestimated by the local density approximation, is considerably improved by the self-interaction correction. The increase of the gap upon alloying ZnO with Mg corroborates experimental trends. Our findings are relevant for applications in optical, electrical, and in particular in magnetoelectric devices.
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Submitted 30 April, 2009;
originally announced April 2009.