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In Situ In Transit Hybrid Analysis with Catalyst-ADIOS2
Authors:
François Mazen,
Louis Gombert,
Lucas Givord,
Charles Gueunet
Abstract:
In this short paper, we present an innovative approach to limit the required bandwidth when transferring data during in transit analysis. This approach is called hybrid because it combines existing in situ and in transit solutions. It leverages the stable ABI of Catalyst version 2 and the Catalyst-ADIOS2 implementation to seamlessly switch from in situ, in transit and hybrid analysis without modif…
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In this short paper, we present an innovative approach to limit the required bandwidth when transferring data during in transit analysis. This approach is called hybrid because it combines existing in situ and in transit solutions. It leverages the stable ABI of Catalyst version 2 and the Catalyst-ADIOS2 implementation to seamlessly switch from in situ, in transit and hybrid analysis without modifying the numerical simulation code. The typical use case is to perform data reduction in situ then generate a visualization in transit on the reduced data. This approach makes the numerical simulation workflows very flexible depending on the size of the data, the available computing resources or the analysis type. Our experiment with this hybrid approach, reducing data before sending it, demonstrated large cost reductions for some visualization pipelines compared to in situ and in transit solutions. The implementation is available under an open source permissive license to be usable broadly in any scientific community.
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Submitted 26 June, 2024;
originally announced June 2024.
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Purcell enhancement of silicon W centers in circular Bragg grating cavities
Authors:
Baptiste Lefaucher,
Jean-Baptiste Jager,
Vincent Calvo,
Félix Cache,
Alrik Durand,
Vincent Jacques,
Isabelle Robert-Philip,
Guillaume Cassabois,
Yoann Baron,
Frédéric Mazen,
Sébastien Kerdilès,
Shay Reboh,
Anaïs Dréau,
Jean-Michel Gérard
Abstract:
Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum el…
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Generating single photons on demand in silicon is a challenge to the scalability of silicon-on-insulator integrated quantum photonic chips. While several defects acting as artificial atoms have recently demonstrated an ability to generate antibunched single photons, practical applications require tailoring of their emission through quantum cavity effects. In this work, we perform cavity quantum electrodynamics experiments with ensembles of artificial atoms embedded in silicon-on-insulator microresonators. The emitters under study, known as W color centers, are silicon tri-interstitial defects created upon self-ion implantation and thermal annealing. The resonators consist of circular Bragg grating cavities, designed for moderate Purcell enhancement ($F_p=12.5$) and efficient luminescence extraction ($η_{coll}=40\%$ for a numerical aperture of 0.26) for W centers located at the mode antinode. When the resonant frequency mode of the cavity is tuned with the zero-phonon transition of the emitters at 1218 nm, we observe a 20-fold enhancement of the zero-phonon line intensity, together with a two-fold decrease of the total relaxation time in time-resolved photoluminescence experiments. Based on finite-difference time-domain simulations, we propose a detailed theoretical analysis of Purcell enhancement for an ensemble of W centers, considering the overlap between the emitters and the resonant cavity mode. We obtain a good agreement with our experimental results assuming a quantum efficiency of $65 \pm 10 \%$ for the emitters in bulk silicon. Therefore, W centers open promising perspectives for the development of on-demand sources of single photons, harnessing cavity quantum electrodynamics in silicon photonic chips.
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Submitted 27 October, 2023;
originally announced October 2023.
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Brittle fracture studied by ultra-high speed synchrotron X-ray diffraction imaging
Authors:
Antoine Petit,
Sylvia Pokam,
Frederic Mazen,
Samuel Tardif,
Didier Landru,
Oleg Kononchuk,
Nadia Ben Mohamed,
Margie P. Olbinado,
Alexander Rack,
Francois Rieutord
Abstract:
Ever since the very first human-made knapped tools, the control of fracture propagation in brittle materials has been a vector of technological development. Nowadays, a broad range of applications relies on crack propagation control, from the mitigation of damages, e.g., from impacts in glass screens or windshields, to industrial processes harnessing fracture to achieve clean cuts over large dista…
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Ever since the very first human-made knapped tools, the control of fracture propagation in brittle materials has been a vector of technological development. Nowadays, a broad range of applications relies on crack propagation control, from the mitigation of damages, e.g., from impacts in glass screens or windshields, to industrial processes harnessing fracture to achieve clean cuts over large distances. Yet, studying the fracture in real time is a challenging task, since cracks can propagate up to a few km/s in materials that are often opaque. Here, we report on the in situ investigation of cracks propagating at up to 2.5 km/s along a (001) plane of a silicon single crystal, using X-ray diffraction megahertz imaging with intense and time-structured synchrotron radiation. The studied system is based on the Smart Cut process, where a buried layer in a material (typically Si) is weakened by micro-cracks and then used to drive a macroscopic crack (0.1 m) in a plane parallel to the surface with minimal deviation (1 nm). The results we report here provide the first direct confirmation that the shape of the crack front is not affected by the distribution of the micro-cracks, which had been a postulate for previous studies based on post-fracture results. We further measured instantaneous crack velocities over the centimeter-wide field-of-view, which had only been previously inferred from sparse point measurements, and evidence the effect of local heating by the X-ray beam. Finally, we also observed the post-crack movements of the separated wafer parts, which can be explained using pneumatics and elasticity. Thus, this study provides a comprehensive view of controlled fracture propagation in a crystalline material, paving the way for the in situ measurement of ultra-fast strain field propagation.
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Submitted 12 April, 2022;
originally announced April 2022.
