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Engineering 2D material exciton lineshape with graphene/h-BN encapsulation
Authors:
Steffi Y. Woo,
Fuhui Shao,
Ashish Arora,
Robert Schneider,
Nianjheng Wu,
Andrew J. Mayne,
Ching-Hwa Ho,
Mauro Och,
Cecilia Mattevi,
Antoine Reserbat-Plantey,
Alvaro Moreno,
Hanan Herzig Sheinfux,
Kenji Watanabe,
Takashi Taniguchi,
Steffen Michaelis de Vasconcellos,
Frank H. L. Koppens,
Zhichuan Niu,
Odile Stéphan,
Mathieu Kociak,
F. Javier García de Abajo,
Rudolf Bratschitsch,
Andrea Konečná,
Luiz H. G. Tizei
Abstract:
Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical do**, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs…
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Control over the optical properties of atomically thin two-dimensional (2D) layers, including those of transition metal dichalcogenides (TMDs), is needed for future optoelectronic applications. Remarkable advances have been achieved through alloying, chemical and electrical do**, and applied strain. However, the integration of TMDs with other 2D materials in van der Waals heterostructures (vdWHs) to tailor novel functionalities remains largely unexplored. Here, the near-field coupling between TMDs and graphene/graphite is used to engineer the exciton lineshape and charge state. Fano-like asymmetric spectral features are produced in WS$_{2}$, MoSe$_{2}$ and WSe$_{2}$ vdWHs combined with graphene, graphite, or jointly with hexagonal boron nitride (h-BN) as supporting or encapsulating layers. Furthermore, trion emission is suppressed in h-BN encapsulated WSe$_{2}$/graphene with a neutral exciton redshift (44 meV) and binding energy reduction (30 meV). The response of these systems to electron-beam and light probes is well-described in terms of 2D optical conductivities of the involved materials. Beyond fundamental insights into the interaction of TMD excitons with structured environments, this study opens an unexplored avenue toward sha** the spectral profile of narrow optical modes for application in nanophotonic devices.
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Submitted 13 November, 2023;
originally announced November 2023.
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Substrate influence on transition metal dichalcogenide monolayer exciton absorption linewidth broadening
Authors:
Fuhui Shao,
Steffi Y. Woo,
Nianjheng Wu,
Robert Schneider,
Andrew J. Mayne,
Steffen Michaelis de Vasconcellos,
Ashish Arora,
Benjamin J. Carey,
Johann A. Preuß,
Noémie Bonnet,
Cecilia Mattevi,
Kenji Watanabe,
Takashi Taniguchi,
Zhichuan Niu,
Rudolf Bratschitsch,
Luiz H. G. Tizei
Abstract:
The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monola…
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The excitonic states of transition metal dichacolgenide (TMD) monolayers are heavily influenced by their external dielectric environment based on the substrate used. In this work, various wide bandgap dielectric materials, namely hexagonal boron nitride (\textit{h}-BN) and amorphous silicon nitride (Si$_3$N$_4$), under different configurations as support or encapsulation material for WS$_2$ monolayers are investigated to disentangle the factors contributing to inhomogeneous broadening of exciton absorption lines in TMDs using electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope (STEM). In addition, monolayer roughness in each configuration was determined from tilt series of electron diffraction patterns by assessing the broadening of diffraction spots by comparison with simulations. From our experiments, the main factors that play a role in linewidth broadening can be classified in increasing order of importance by: monolayer roughness, surface cleanliness, and substrate-induced charge trap**. Furthermore, because high-energy electrons are used as a probe, electron beam-induced damage on bare TMD monolayer is also revealed to be responsible for irreversible linewidth increases. \textit{h}-BN not only provides clean surfaces of TMD monolayer, and minimal charge disorder, but can also protect the TMD from irradiation damage. This work provides a better understanding of the mechanisms by which \textit{h}-BN remains, to date, the most compatible material for 2D material encapsulation, facilitating the realization of intrinsic material properties to their full potential.
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Submitted 9 February, 2022;
originally announced February 2022.
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Silicene nanoribbons on an insulating thin film
Authors:
Khalid Quertite,
Hanna Enriquez,
Nicolas Trcera,
Yongfeng Tong,
Azzedine Bendounan,
Andrew J. Mayne,
Gérald Dujardin,
Pierre Lagarde,
Abdallah El kenz,
Abdelilah Benyoussef,
Yannick J. Dappe,
Abdelkader Kara,
Hamid Oughaddou
Abstract:
Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we r…
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Silicene, a new two-dimensional (2D) material has attracted intense research because of the ubiquitous use of silicon in modern technology. However, producing free-standing silicene has proved to be a huge challenge. Until now, silicene could be synthesized only on metal surfaces where it naturally forms strong interactions with the metal substrate that modify its electronic properties. Here, we report the first experimental evidence of silicene sheet on an insulating NaCl thin film. This work represents a major breakthrough; for the study of the intrinsic properties of silicene, and by extension to other 2D materials that have so far only been grown on metal surfaces.
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Submitted 27 December, 2020;
originally announced December 2020.
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Phosphorus Pentamers: Floating Nanoflowers form a 2D Network
Authors:
Wei Zhang,
Hanna Enriquez,
Yongfeng Tong,
Andrew J. Mayne,
Azzedine Bendounan,
Yannick J. Dappe,
Abdelkader Kara,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducti…
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We present an experimental investigation of a new polymorphic 2D single layer of phosphorus on Ag(111). The atomically-resolved scanning tunneling microscopy (STM) images show a new 2D material composed of freely-floating phosphorus pentamers organized into a 2D layer, where the pentamers are aligned in close-packed rows. The scanning tunneling spectroscopy (STS) measurements reveal a semiconducting character with a band gap of 1.20 eV. This work presents the formation at low temperature (LT) of a new polymorphic 2D phosphorus layer composed of a floating 2D pentamer structure. The smooth curved terrace edges and a lack of any clear crystallographic orientation with respect to the Ag(111) substrate at room temperature indicates a smooth potential energy surface that is reminiscent of a liquid-like growth phase. This is confirmed by density functional theory (DFT) calculations that find a small energy barrier of only 0.17 eV to surface diffusion of the pentamers (see Supplemental Material). The formation of extended, homogeneous domains is a key ingredient to opening a new avenue to integrate this new 2D material into electronic devices.
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Submitted 4 November, 2020;
originally announced November 2020.
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Tip-induced oxidation of silicene nano-ribbons
Authors:
Mohammed Rachid Tchalala Hanna Enriquez,
Azzedine Bendounan,
Andrew J. Mayne,
Gérald Dujardin,
Abdelkader Kara,
Mustapha Ait Ali,
Hamid Oughaddou
Abstract:
We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V…
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We report on the oxidation of self-assembled silicene nanoribbons grown on the Ag(110) surface using Scanning Tunneling Microscopy and High-Resolution Photoemission Spectroscopy. The results show that silicene nanoribbons present a strong resistance towards oxidation using molecular oxygen. This can be overcome by increasing the electric field in the STM tunnel junction above a threshold of +2.6 V to induce oxygen dissociation and reaction. The higher reactivity of the silicene nanoribbons towards atomic oxygen is observed as expected. The HR-PES confirm these observations: Even at high exposures of molecular oxygen, the Si 2p core-level peaks corresponding to pristine silicene remain dominant, reflecting a very low reactivity to molecular oxygen. Complete oxidation is obtained following exposure to high doses of atomic oxygen; the Si 2p core level peak corresponding to pristine silicene disappears.
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Submitted 24 June, 2020;
originally announced June 2020.
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Epitaxial Synthesis of Blue Phosphorene
Authors:
Wei Zhang,
Hanna Enriquez,
Yongfeng Tong,
Azzedine Bendounan,
Abdelkader Kara,
Ari P. Seitsonen,
Andrew J. Mayne,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is…
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Phosphorene is a new two-dimensional material composed of a single or few atomic layers of black phosphorus. Phosphorene has both an intrinsic tunable direct band gap and high carrier mobility values, which make it suitable for a large variety of optical and electronic devices. However, the synthesis of single-layer phosphorene is a major challenge. The standard procedure to obtain phosphorene is by exfoliation. More recently, the epitaxial growth of single-layer phosphorene on Au(111) has been investigated by molecular beam epitaxy and the obtained structure has been described as a blue-phosphorene sheet. In the present study, large areas of high-quality monolayer phosphorene, with a band gap value at least equal to 0.8 eV, have been synthesized on Au(111). Our experimental investigations, coupled with DFT calculations, give evidence of two distinct phases of blue phosphorene on Au(111), instead of one as previously reported, and their atomic structures have been determined.
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Submitted 3 November, 2018;
originally announced November 2018.
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Silicon Sheets By Redox Assisted Chemical Exfoliation
Authors:
Mohamed Rachid Tchalala,
Mustapha Ait Ali,
Hanna Enriquez,
Abdelkader Kara,
Abdessadek Lachgar,
Said Yagoubi,
Eddy Foy,
Enrique Vega,
Azzedine Bendounan,
Mathieu G. Silly,
Fausto Sirotti,
Serge Nitshe,
Damien Chaudanson,
Haik Jamgotchian,
Bernard Aufray,
Andrew J. Mayne,
Gérald Dujardin,
Hamid Oughaddou
Abstract:
In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon s…
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In this paper, we report the direct chemical synthesis of silicon sheets in gram-scale quantities by chemical exfoliation of pre-processed calcium di-silicide (CaSi2). We have used a combination of X-ray photoelectron spectroscopy, transmission electron microscopy and Energy-dispersive X-ray spectroscopy to characterize the obtained silicon sheets. We found that the clean and crystalline silicon sheets show a 2-dimensional hexagonal graphitic structure.
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Submitted 29 September, 2013;
originally announced September 2013.
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Combined AFM and STM measurements of a silicene sheet grown on Ag(111) surface
Authors:
Zsolt Majzik,
Mohamed Rachid Tchalala,
Martin Švec,
Prokop Hapala,
Hanna Enriquez,
Abdelkader Kara,
Andrew J. Mayne,
Gérald Dujardin,
Pavel Jelínek,
Hamid Oughaddou
Abstract:
In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9° and (4x4) superstructures. For the widely observed (4x4) structure, the nc-…
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In this Letter, we present the first non-contact atomic force microscopy (nc-AFM) of a silicene on silver (Ag) surface, obtained by combining non-contact atomic force microscopy (nc-AFM) and scanning tunneling microscopy (STM). STM images over large areas of silicene grown on Ag(111) surface show both (sqrt13xsqrt13)R13.9° and (4x4) superstructures. For the widely observed (4x4) structure, the nc-AFM topography shows an atomic-scale contrast inversion as the tip-surface distance is decreased. At the shortest tip-surface distance, the nc-AFM topography is very similar to the STM one. The observed structure in the nc-AFM topography is compatible with only one out of two silicon atoms being visible. This indicates unambiguously a strong buckling of the silicene honeycomb layer.
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Submitted 24 June, 2013;
originally announced June 2013.
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Formation of one-dimensional self-assembled silicon nanoribbons on Au(110)-(2x1)
Authors:
Mohamed Rachid Tchalal,
Hanna Enriquez,
Andrew J. Mayne,
Abdelkader Kara,
Silvan Roth,
Mathieu G. Silly,
Azzedine Bendounan,
Fausto Sirotti,
Thomas Greber,
Bernard Aufray,
Gérald Dujardin,
Mustapha Ait Ali,
Hamid Oughaddou
Abstract:
We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. Th…
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We report results on the self-assembly of silicon nanoribbons on the (2x1) reconstructed Au(110) surface under ultra-high vacuum conditions. Upon adsorption of 0.2 monolayer (ML) of silicon the (2x1) reconstruction of Au(110) is replaced by an ordered surface alloy. Above this coverage a new superstructure is revealed by low electron energy diffraction (LEED) which becomes sharper at 0.3 Si ML. This superstructure corresponds to Si nanoribbons all oriented along the [-110] direction as revealed by LEED and scanning tunneling microscopy (STM). STM and high-resolution photoemission spectroscopy indicate that the nanoribbons are flat and predominantly 1.6 nm wide. In addition the silicon atoms show signatures of two chemical environments corresponding to the edge and center of the ribbons.
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Submitted 14 February, 2013;
originally announced February 2013.
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Pseudospin rotation and valley mixing in electron scattering at graphene edges
Authors:
Changwon Park,
Heejun Yang,
Andrew J. Mayne,
Gerald Dujardin,
Sunae Seo,
Young Kuk,
Jisoon Ihm,
Gunn Kim
Abstract:
In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone, respectively. Unique electronic properties of graphene result in striking phenomena such as Klein tunnelling, Veselago lens, and valley-polarized currents. Here, we in…
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In graphene, the pseudospin and the valley flavor arise as new types of quantum degrees of freedom due to the honeycomb lattice comprising two sublattices (A and B) and two inequivalent Dirac points (K and K') in the Brillouin zone, respectively. Unique electronic properties of graphene result in striking phenomena such as Klein tunnelling, Veselago lens, and valley-polarized currents. Here, we investigate the roles of the pseudospin and the valley in electron scattering at graphene edges and show that they are strongly correlated with charge density modulations of short-wavelength oscillations and slowly-decaying beat patterns. Theoretical analyses using nearest-neighbor tight-binding methods and first-principles density-functional theory calculations agree well with our experimental data from the scanning tunneling microscopy. We believe that this study will lead to useful application of graphene to "valleytronics" and "pseudospintronics".
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Submitted 7 February, 2011;
originally announced February 2011.