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Epitaxial growth and magnetic properties of kagome metal FeSn/elemental ferromagnet heterostructures
Authors:
Prajwal M. Laxmeesha,
Tessa D. Tucker,
Rajeev Kumar Rai,
Shuchen Li,
Myoung-Woo Yoo,
Eric A. Stach,
Axel Hoffmann,
Steven J. May
Abstract:
Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the syn…
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Binary kagome compounds TmXn (T = Mn, Fe, Co; X = Sn, Ge; m:n = 3:1, 3:2, 1:1) have garnered recent interest owing to the presence of both topological band crossings and flat bands arising from the geometry of the metal-site kagome lattice. To exploit these electronic features for potential applications in spintronics, the growth of high quality heterostructures is required. Here we report the synthesis of Fe/FeSn and Co/FeSn bilayers on Al2O3 substrates using molecular beam epitaxy to realize heterointerfaces between elemental ferromagnetic metals and antiferromagnetic kagome metals. Structural characterization using high-resolution X-ray diffraction, reflection high-energy electron diffraction, and electron microscopy reveals the FeSn films are flat and epitaxial. Rutherford backscattering spectroscopy was used to confirm the stoichiometric window where the FeSn phase is stabilized, while transport and magnetometry measurements were conducted to verify metallicity and magnetic ordering in the films. Exchange bias was observed, confirming the presence of antiferromagnetic order in the FeSn layers, paving the way for future studies of magnetism in kagome heterostructures and potential integration of these materials into devices.
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Submitted 21 January, 2024;
originally announced January 2024.
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Strain-induced anion ordering in perovskite oxyfluoride films
Authors:
Jiayi Wang,
Yong** Shin,
Jay R. Paudel,
Joseph D. Grassi,
Raj K. Sah,
Weibing Yang,
Evguenia Karapetrova,
Abdulhadi Zaidan,
Vladimir N. Strocov,
Christoph Klewe,
Padraic Shafer,
Alexander X. Gray,
James M. Rondinelli,
Steven J. May
Abstract:
Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in develo** robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on…
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Anionic ordering is a promising route to engineer physical properties in functional heteroanionic materials. A central challenge in the study of anion-ordered compounds lies in develo** robust synthetic strategies to control anion occupation and in understanding the resultant implications for electronic structure. Here, we show that epitaxial strain induces preferential occupation of F and O on the anion sites in perovskite oxyfluoride SrMnO2.5-dFg films grown on different substrates. Under compressive strain, F tends to take the apical-like sites, which was revealed by F and O K-edge linearly polarized x-ray absorption spectroscopy and density functional theory calculations, resulting in an enhanced c-axis expansion. Under tensile strain, F tends to take the equatorial-like sites, enabling the longer Mn-F bonds to lie within the plane. The anion ordered oxyfluoride films exhibit a significant orbital polarization of the 3d electrons, distinct F-site dependence to their valence band density of states, and an enhanced resistivity when F occupies the apical-like anion site compared to the equatorial-like site. By demonstrating a general strategy for inducing anion-site order in oxyfluoride perovskites, this work lays the foundation for future materials design and synthesis efforts that leverage this greater degree of atomic control to realize new polar or quasi-two-dimensional materials.
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Submitted 2 December, 2020;
originally announced December 2020.
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Itinerancy-dependent non-collinear spin textures in SrFeO3, CaFeO3, and CaFeO3/SrFeO3 heterostructures probed via resonant x-ray scattering
Authors:
Paul C. Rogge,
Robert J. Green,
Ronny Sutarto,
Steven J. May
Abstract:
Non-collinear, multi-q spin textures can give rise to exotic, topologically protected spin structures such as skyrmions, but the reason for their formation over simple single-q structures is not well understood. While lattice frustration and the Dzyaloshinskii-Moriya interaction are known to produce non-collinear spin textures, the role of electron itinerancy in multi-q formation is much less stud…
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Non-collinear, multi-q spin textures can give rise to exotic, topologically protected spin structures such as skyrmions, but the reason for their formation over simple single-q structures is not well understood. While lattice frustration and the Dzyaloshinskii-Moriya interaction are known to produce non-collinear spin textures, the role of electron itinerancy in multi-q formation is much less studied. Here we investigated the non-collinear, helical spin structures in epitaxial films of the perovskite oxides SrFeO3 and CaFeO3 using magnetotransport and resonant soft x-ray magnetic diffraction. Metallic SrFeO3 exhibits features in its magnetoresistance that are consistent with its recently proposed multi-q structure. Additionally, the magnetic Bragg peak of SrFeO3 measured at the Fe L edge resonance energy asymmetrically broadens with decreasing temperature in its multi-q state. In contrast, insulating CaFeO3 has a symmetric scattering peak with an intensity 10x weaker than SrFeO3. Enhanced magnetic scattering at O K edge prepeak energies demonstrates the role of a negative charge transfer energy and the resulting oxygen ligand holes in the magnetic ordering of these ferrates. By measuring magnetic diffraction of CaFeO3/SrFeO3 superlattices with thick CaFeO3 layers, we find that the CaFeO3 helical ordering is coherent across 1 unit cell-thick SrFeO3 layers but not 6 unit cell-thick layers. We conclude that insulating CaFeO3 supports only a simple single-q helical structure in contrast to metallic SrFeO3 that hosts multi-q structures. Our results provide important insight into the role of electron itinerancy in the formation of multi-q spin structures.
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Submitted 24 June, 2019;
originally announced June 2019.
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Probing single unit-cell resolved electronic structure modulations in oxide superlattices with standing-wave photoemission
Authors:
W. Yang,
R. U. Chandrasena,
M. Gu,
R. M. S. dos Reis,
E. J. Moon,
Arian Arab,
M. -A. Husanu,
J. Ciston,
V. N. Strocov,
J. M. Rondinelli,
S. J. May,
A. X. Gray
Abstract:
Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomen…
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Control of structural couplings at the complex-oxide interfaces is a powerful platform for creating new ultrathin layers with electronic and magnetic properties unattainable in the bulk. However, with the capability to design and control the electronic structure of such buried layers and interfaces at a unit-cell level, a new challenge emerges to be able to probe these engineered emergent phenomena with depth-dependent atomic resolution as well as element- and orbital selectivity. Here, we utilize a combination of core-level and valence-band soft x-ray standing-wave photoemission spectroscopy, in conjunction with scanning transmission electron microscopy, to probe the depth-dependent and single-unit-cell resolved electronic structure of an isovalent manganite superlattice [Eu0.7Sr0.3MnO3/La0.7Sr0.3MnO3]x15 wherein the electronic-structural properties are intentionally modulated with depth via engineered oxygen octahedra rotations/tilts and A-site displacements. Our unit-cell resolved measurements reveal significant transformations in the local chemical and electronic valence-band states, which are consistent with the layer-resolved first-principles theoretical calculations, thus opening the door for future depth-resolved studies of a wide variety of hetero-engineered material systems.
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Submitted 11 January, 2019;
originally announced January 2019.
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Inverted orbital polarization in strained correlated oxide films
Authors:
Paul C. Rogge,
Robert J. Green,
Padraic Shafer,
Gilberto Fabbris,
Andi M. Barbour,
Benjamin M. Lefler,
Elke Arenholz,
Mark P. M. Dean,
Steven J. May
Abstract:
Manipulating the orbital occupation of valence electrons via epitaxial strain in an effort to induce new functional properties requires considerations of how changes in the local bonding environment affect the band structure at the Fermi level. Using synchrotron radiation to measure the x-ray linear dichroism of epitaxially strained films of the correlated oxide CaFeO3, we demonstrate that the orb…
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Manipulating the orbital occupation of valence electrons via epitaxial strain in an effort to induce new functional properties requires considerations of how changes in the local bonding environment affect the band structure at the Fermi level. Using synchrotron radiation to measure the x-ray linear dichroism of epitaxially strained films of the correlated oxide CaFeO3, we demonstrate that the orbital polarization of the Fe valence electrons is opposite from conventional understanding. Although the energetic ordering of the Fe 3d orbitals is confirmed by multiplet ligand field theory analysis to be consistent with previously reported strain-induced behavior, we find that the nominally higher energy orbital is more populated than the lower. We ascribe this inverted orbital polarization to an anisotropic bandwidth response to strain in a compound with nearly filled bands. These findings provide an important counterexample to the traditional understanding of strain-induced orbital polarization and reveal a new method to engineer otherwise unachievable orbital occupations in correlated oxides.
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Submitted 7 November, 2018;
originally announced November 2018.
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Effect of Fluoropolymer Composition on Topochemical Synthesis of SrMnO$_{3-δ}$F$_{γ}$ Oxyfluoride Films
Authors:
Jiayi Wang,
Yong** Shin,
Elke Arenholz,
Benjamin M. Lefler,
James M. Rondinelli,
Steven J. May
Abstract:
We report the synthesis of SrMnO$_{3-δ}$F$_{γ}$ perovskite oxyfluoride thin films using a vapor transport method to fluorinate as-grown SrMnO$_{2.5}$ epitaxial thin films. The influence of the fluoropolymer, which acts as a fluorine vapor source, was investigated by utilizing polyvinyl fluoride (PVF), polyvinylidene difluoride (PVDF) and polytetrafluoroethylene (PTFE) in the reaction. The same pro…
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We report the synthesis of SrMnO$_{3-δ}$F$_{γ}$ perovskite oxyfluoride thin films using a vapor transport method to fluorinate as-grown SrMnO$_{2.5}$ epitaxial thin films. The influence of the fluoropolymer, which acts as a fluorine vapor source, was investigated by utilizing polyvinyl fluoride (PVF), polyvinylidene difluoride (PVDF) and polytetrafluoroethylene (PTFE) in the reaction. The same process was carried out with polyethylene (PE) to isolate the role of carbon in the vapor transport process. The F distribution was probed by X-ray photoemission spectroscopy, which confirmed the incorporation of F into the films and revealed higher F concentrations in films exposed to PVF and PVDF compared to PTFE. The c-axis parameter expands after fluorination, a result consistent with density functional theory calculations that attribute the volume expansion to elongated Mn-F bonds compared to shorter Mn-O bonds. Using X-ray absorption spectroscopy, we show that the fluorination process reduces the nominal Mn oxidation state suggesting that F substitutes on O sites in the lattice as opposed to filling anion vacancy sites, a finding further supported by calculated formation energies of different F site occupancies. These results provide new insights into topochemical fluorination of perovskite oxides, which should enable future synthesis and design efforts focused on oxyfluoride heterostructures.
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Submitted 23 July, 2018;
originally announced July 2018.
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Electronic structure of negative charge transfer CaFeO3 across the metal-insulator transition
Authors:
Paul C. Rogge,
Ravini U. Chandrasena,
Antonio Cammarata,
Robert J. Green,
Padraic Shafer,
Benjamin M. Lefler,
Amanda Huon,
Arian Arab,
Elke Arenholz,
Ho Nyung Lee,
Tien-Lin Lee,
Slavomír Nemšák,
James M. Rondinelli,
Alexander X. Gray,
Steven J. May
Abstract:
We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functi…
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We investigated the metal-insulator transition for epitaxial thin films of the perovskite CaFeO3, a material with a significant oxygen ligand hole contribution to its electronic structure. We find that biaxial tensile and compressive strain suppress the metal-insulator transition temperature. By combining hard X-ray photoelectron spectroscopy, soft X-ray absorption spectroscopy, and density functional calculations, we resolve the element-specific changes to the electronic structure across the metal-insulator transition. We demonstrate that the Fe electron valence undergoes no observable change between the metallic and insulating states, whereas the O electronic configuration undergoes significant changes. This strongly supports the bond-disproportionation model of the metal-insulator transition for CaFeO3 and highlights the importance of ligand holes in its electronic structure. By sensitively measuring the ligand hole density, however, we find that it increases by ~5-10% in the insulating state, which we ascribe to a further localization of electron charge on the Fe sites. These results provide detailed insight into the metal-insulator transition of negative charge transfer compounds and should prove instructive for understanding metal-insulator transitions in other late transition metal compounds such as the nickelates.
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Submitted 1 February, 2018; v1 submitted 16 January, 2018;
originally announced January 2018.
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Should unfolded histograms be used to test hypotheses?
Authors:
Robert D. Cousins,
Samuel J. May,
Yipeng Sun
Abstract:
In many analyses in high energy physics, attempts are made to remove the effects of detector smearing in data by techniques referred to as "unfolding" histograms, thus obtaining estimates of the true values of histogram bin contents. Such unfolded histograms are then compared to theoretical predictions, either to judge the goodness of fit of a theory, or to compare the abilities of two or more the…
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In many analyses in high energy physics, attempts are made to remove the effects of detector smearing in data by techniques referred to as "unfolding" histograms, thus obtaining estimates of the true values of histogram bin contents. Such unfolded histograms are then compared to theoretical predictions, either to judge the goodness of fit of a theory, or to compare the abilities of two or more theories to describe the data. When doing this, even informally, one is testing hypotheses. However, a more fundamentally sound way to test hypotheses is to smear the theoretical predictions by simulating detector response and then comparing to the data without unfolding; this is also frequently done in high energy physics, particularly in searches for new physics. One can thus ask: to what extent does hypothesis testing after unfolding data materially reproduce the results obtained from testing by smearing theoretical predictions? We argue that this "bottom-line-test" of unfolding methods should be studied more commonly, in addition to common practices of examining variance and bias of estimates of the true contents of histogram bins. We illustrate bottom-line-tests in a simple toy problem with two hypotheses.
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Submitted 24 July, 2016;
originally announced July 2016.
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Octahedral rotation patterns in strained EuFeO3 and other Pbnm perovskite films: Implications for hybrid improper ferroelectricity
Authors:
A. K. Choquette,
C. R. Smith,
R. J. Sichel-Tissot,
E. J. Moon,
M. D. Scafetta,
E. Di Gennaro,
F. Miletto Granozio,
E. Karapetrova,
S. J. May
Abstract:
We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compa…
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We report the relationship between epitaxial strain and the crystallographic orientation of the in-phase rotation axis and A-site displacements in Pbnm-type perovskite films. Synchrotron diffraction measurements of EuFeO3 films under strain states ranging from 2% compressive to 0.9% tensile on cubic or rhombohedral substrates exhibit a combination of a-a+c- and a+a-c- rotational patterns. We compare the EuFeO3 behavior with previously reported experimental and theoretical work on strained Pbnm-type films on non-orthorhombic substrates, as well as additional measurements from LaGaO3, LaFeO3, and Eu0.7Sr0.3MnO3 films on SrTiO3. Compiling the results from various material systems reveals a general strain dependence in which compressive strain strongly favors a-a+c- and a+a-c- rotation patterns and tensile strain weakly favors a-a-c+ structures. In contrast, EuFeO3 films grown on Pbnm-type GdScO3 under 2.3% tensile strain take on a uniform a-a+c- rotation pattern imprinted from the substrate, despite strain energy considerations that favor the a-a-c+ pattern. These results point to the use of substrate imprinting as a more robust route than strain for tuning the crystallographic orientations of the octahedral rotations and A-site displacements needed to realize rotation-induced hybrid improper ferroelectricity in oxide heterostructures.
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Submitted 9 June, 2016;
originally announced June 2016.
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Magnetization Properties and Vortex Phase Diagram in CuxTiSe2 Single Crystals
Authors:
P. Husanikova,
J. Fedor,
J. Derer,
J. Soltys,
V. Cambel,
M. Iavarone,
S. J. May,
G. Karapetrov
Abstract:
We have investigated the magnetization properties and flux dynamics of superconducting Cu$_x$TiSe$_2$ single crystals within wide range of copper concentrations. We find that the superconducting anisotropy is low and independent on copper concentration ($γ\sim1.7$), except in the case of strongly underdoped samples ($x\leq0.06$) that show a gradual increase in anisotropy to $γ\sim1.9$. The vortex…
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We have investigated the magnetization properties and flux dynamics of superconducting Cu$_x$TiSe$_2$ single crystals within wide range of copper concentrations. We find that the superconducting anisotropy is low and independent on copper concentration ($γ\sim1.7$), except in the case of strongly underdoped samples ($x\leq0.06$) that show a gradual increase in anisotropy to $γ\sim1.9$. The vortex phase diagram in this material is characterized by broad region of vortex liquid phase that is unusual for such low-$T_c$ superconductor with low anisotropy. Below the irreversibility line the vortex solid state supports relatively low critical current densities as compared to the depairing current limit ($J_c/J_0\sim10^{-7}$). All this points out that local fluctuations in copper concentration have little effect on bulk pinning properties in this system.
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Submitted 6 October, 2013;
originally announced October 2013.
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Delta Do** of Ferromagnetism in Antiferromagnetic Manganite Superlattices
Authors:
T. S. Santos,
B. J. Kirby,
S. Kumar,
S. J. May,
J. A. Borchers,
B. B. Maranville,
J. Zarestky,
S. G. E. te Velthuis,
J. van den Brink,
A. Bhattacharya
Abstract:
We demonstrate that delta-do** can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers s…
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We demonstrate that delta-do** can be used to create a dimensionally confined region of metallic ferromagnetism in an antiferromagnetic (AF) manganite host, without introducing any explicit disorder due to dopants or frustration of spins. Delta-doped carriers are inserted into a manganite superlattice (SL) by a digital-synthesis technique. Theoretical consideration of these additional carriers show that they cause a local enhancement of ferromagnetic (F) double-exchange with respect to AF superexchange, resulting in local canting of the AF spins. This leads to a highly modulated magnetization, as measured by polarized neutron reflectometry. The spatial modulation of the canting is related to the spreading of charge from the doped layer, and establishes a fundamental length scale for charge transfer, transformation of orbital occupancy and magnetic order in these manganites. Furthermore, we confirm the existence of the canted, AF state as was predicted by de Gennes [P.-G. de Gennes, Phys. Rev. 118, 141 (1960)], but had remained elusive.
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Submitted 21 October, 2011; v1 submitted 1 May, 2011;
originally announced May 2011.
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Control of octahedral rotations in (LaNiO$_3$)$_{n}$/(SrMnO$_3$)$_m$ superlattices
Authors:
S. J. May,
C. R. Smith,
J. -W. Kim,
E. Karapetrova,
A. Bhattacharya,
P. J. Ryan
Abstract:
Oxygen octahedral rotations have been measured in short-period (LaNiO$_3$)$_n$/(SrMnO$_3$)$_m$ superlattices using synchrotron diffraction. The in-plane and out-of-plane bond angles and lengths are found to systematically vary with superlattice composition. Rotations are suppressed in structures with $m>n$, producing a nearly cubic form of LaNiO$_3$. Large rotations are present in structures with…
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Oxygen octahedral rotations have been measured in short-period (LaNiO$_3$)$_n$/(SrMnO$_3$)$_m$ superlattices using synchrotron diffraction. The in-plane and out-of-plane bond angles and lengths are found to systematically vary with superlattice composition. Rotations are suppressed in structures with $m>n$, producing a nearly cubic form of LaNiO$_3$. Large rotations are present in structures with $m<n$, leading to reduced bond angles in SrMnO$_3$. The metal-oxygen-metal bond lengths decrease as rotations are reduced, in contrast to behavior previously observed in strained, single layer films. This result demonstrates that superlattice structures can be used to stabilize non-equilibrium octahedral behavior in a manner distinct from epitaxial strain, providing a novel means to engineer the electronic and ferroic properties of oxide heterostructures.
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Submitted 16 February, 2011;
originally announced February 2011.
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Quantifying octahedral rotations in strained perovskite oxide films
Authors:
S. J. May,
J. -W. Kim,
J. M. Rondinelli,
E. Karapetrova,
N. A. Spaldin,
A. Bhattacharya,
P. J. Ryan
Abstract:
Epitaxial strain is a proven route to enhancing the properties of complex oxides, however, the details of how the atomic structure accommodates strain are poorly understood due to the difficulty of measuring the oxygen positions in thin films. We present a general methodology for determining the atomic structure of strained oxide films via x-ray diffraction, which we demonstrate using LaNiO3 fil…
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Epitaxial strain is a proven route to enhancing the properties of complex oxides, however, the details of how the atomic structure accommodates strain are poorly understood due to the difficulty of measuring the oxygen positions in thin films. We present a general methodology for determining the atomic structure of strained oxide films via x-ray diffraction, which we demonstrate using LaNiO3 films. The oxygen octahedral rotations and distortions have been quantified by comparing the intensities of half-order Bragg peaks, arising from the two unit cell periodicity of the octahedral rotations, with the calculated structure factor. Combining ab initio density functional calculations with these experimental results, we determine systematically how strain modifies the atomic structure of this functional oxide.
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Submitted 5 February, 2010;
originally announced February 2010.
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Onset of metallic behavior in strained (LaNiO3)n/(SrMnO3)2 superlattices
Authors:
S. J. May,
T. S. Santos,
A. Bhattacharya
Abstract:
(LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-…
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(LaNiO3)n/(SrMnO3)2 superlattices were grown using ozone-assisted molecular beam epitaxy. In situ reflection high energy electron diffraction and x-ray scattering has been used to characterize the structural properties of the superlattices, which are strained to the SrTiO3 substrates. The superlattices exhibit excellent crystallinity and interfacial roughness of less than one unit cell. A metal-insulator transition is observed as $n$ is decreased from 4 to 1. Analysis of the transport data suggests an evolution from gapped insulator (n=1) to hop** conductor (n=2) to metal (n=4) with increasing LaNiO3 concentration.
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Submitted 20 February, 2009;
originally announced February 2009.
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The metal-insulator transition and its relation to magnetic structure in (LaMnO3)2n/(SrMnO3)n superlattices
Authors:
A. Bhattacharya,
S. J. May,
S. G. E. te Velthuis,
M. Warusawithana,
X. Zhai,
A. B. Shah,
J. -M. Zuo,
M. R. Fitzsimmons,
S. D. Bader,
J. N. Eckstein
Abstract:
Superlattices of (LaMnO3)2n/(SrMnO3)n (n=1 to 5), composed of the insulators LaMnO3 and SrMnO3, undergo a metal-insulator transition as a function of n, being metallic for n<=2 and insulating for n>=3. Measurements of transport, magnetization and polarized neutron reflectivity reveal that the ferromagnetism is relatively uniform in the metallic state, and is strongly modulated in the insulating…
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Superlattices of (LaMnO3)2n/(SrMnO3)n (n=1 to 5), composed of the insulators LaMnO3 and SrMnO3, undergo a metal-insulator transition as a function of n, being metallic for n<=2 and insulating for n>=3. Measurements of transport, magnetization and polarized neutron reflectivity reveal that the ferromagnetism is relatively uniform in the metallic state, and is strongly modulated in the insulating state, being high in LaMnO3 and suppressed in SrMnO3. The modulation is consistent with a Mott transition driven by the proximity between the (LaMnO3)/(SrMnO3) interfaces. Disorder localizes states at the Fermi level at the interfaces for n>=3. We suggest that this disorder is due to magnetic frustration at the interfaces.
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Submitted 7 October, 2007;
originally announced October 2007.
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Magnetically asymmetric interfaces in a (LaMnO$_3$)/(SrMnO$_3$) superlattice due to structural asymmetries
Authors:
S. J. May,
A. B. Shah,
S. G. E. te Velthuis,
M. R. Fitzsimmons,
J. M. Zuo,
X. Zhai,
J. N. Eckstein,
S. D. Bader,
A. Bhattacharya
Abstract:
Polarized neutron reflectivity measurements of a ferromagnetic [(LaMnO$_3$)$_{11.8}$/(SrMnO$_3$)$_{4.4}$]$_6$ superlattice reveal a modulated magnetic structure with an enhanced magnetization at the interfaces where LaMnO$_3$ was deposited on SrMnO$_3$ (LMO/SMO). However, the opposite interfaces (SMO/LMO) are found to have a reduced ferromagnetic moment. The magnetic asymmetry arises from the di…
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Polarized neutron reflectivity measurements of a ferromagnetic [(LaMnO$_3$)$_{11.8}$/(SrMnO$_3$)$_{4.4}$]$_6$ superlattice reveal a modulated magnetic structure with an enhanced magnetization at the interfaces where LaMnO$_3$ was deposited on SrMnO$_3$ (LMO/SMO). However, the opposite interfaces (SMO/LMO) are found to have a reduced ferromagnetic moment. The magnetic asymmetry arises from the difference in lateral structural roughness of the two interfaces observed via electron microscopy, with strong ferromagnetism present at the interfaces that are atomically smooth over tens of nanometers. This result demonstrates that atomic-scale roughness can destabilize interfacial phases in complex oxide heterostructures.
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Submitted 25 February, 2008; v1 submitted 11 September, 2007;
originally announced September 2007.
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Negative Magnetoresistance in (In,Mn)As
Authors:
S. J. May,
A. J. Blattner,
B. W. Wessels
Abstract:
The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 1…
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The magnetotransport properties of an In0.95Mn0.05As thin film grown by metal-organic vapor phase epitaxy were measured. Resistivity was measured over the temperature range of 5 to 300 K. The resistivity decreased with increasing temperature from 90 ohm-cm to 0.05 ohm-cm. The field dependence of the low temperature magnetoresistance was measured. A negative magnetoresistance was observed below 17 K with a hysteresis in the magnetoresistance observed at 5 K. The magnetoresistance as a function of applied field was described by the Khosla-Fischer model for spin scattering of carriers in an impurity band.
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Submitted 9 June, 2004;
originally announced June 2004.
