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Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System
Authors:
Brelon J. May,
Jae ** Kim,
Patrick Walker,
William E. McMahon,
Helio R. Moutinho,
Aaron J. Ptak,
David L. Young
Abstract:
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift off a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali-hali…
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The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing techniques to lift off a film from a substrate have substantial drawbacks. This work discusses some of the complexities with the growth of a water-soluble, alkali-halide salt thin film between a III-V substrate and overlayer. Much of the difficulty stems from the growth of GaAs on an actively decomposing NaCl surface at elevated temperatures. Interestingly, the presence of an in-situ electron beam incident on the NaCl surface, prior to and during GaAs deposition, affects the crystallinity and morphology of the III-V overlayer. Here we investigate a wide range of growth temperatures and the timing of the im**ing flux of both elemental sources and high energy electrons at different points during the growth. We show that an assortment of morphologies (discrete islands, porous material, and fully dense layers with sharp interfaces) and crystallinity (amorphous, crystalline, and highly textured) occur depending on the specific growth conditions, driven largely by changes in GaAs nucleation which is greatly affected by the presence of the reflection high energy electron diffraction beam.
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Submitted 9 February, 2022;
originally announced February 2022.
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Ferromagnetic Epitaxial μ-Fe$_{2}$O$_{3}$ on β-Ga$_{2}$O$_{3}$: A New Monoclinic form of Fe$_{2}$O$_{3}$
Authors:
John S. Jamison,
Brelon J. May,
Julia I. Deitz,
Szu-Chia Chien,
David W. McComb,
Tyler J. Grassman,
Wolfgang Windl,
Roberto C. Myers
Abstract:
Here we demonstrate a new monoclinic iron oxide phase (μ-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) β-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding μ-Fe$_{2}$O$_{3}$ are within ~1% of those of β-Ga$_{2}$O$_{3}$ and that its energy of formation is comparable to that of naturally abundant Fe$_{2}$O$_{3}$ polytypes. A s…
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Here we demonstrate a new monoclinic iron oxide phase (μ-Fe$_{2}$O$_{3}$), epitaxially stabilized by growth on (010) β-Ga$_{2}$O$_{3}$. Density functional theory (DFT) calculations find that the lattice parameters of freestanding μ-Fe$_{2}$O$_{3}$ are within ~1% of those of β-Ga$_{2}$O$_{3}$ and that its energy of formation is comparable to that of naturally abundant Fe$_{2}$O$_{3}$ polytypes. A superlattice of μ-Fe$_{2}$O$_{3}$/β-Ga$_{2}$O$_{3}$ is grown by plasma assisted molecular beam epitaxy, with resulting high-resolution x-ray diffraction (XRD) measurements indicating that the μ-Fe$_{2}$O$_{3}$ layers are lattice-matched to the substrate. The measured out-of-plane (b) lattice parameter of 3.12 $\pm$ 0.4 Å is in agreement with the predicted lattice constants and atomic-resolution scanning transmission electron microscopy (STEM) images confirm complete registry of the μ-Fe$_{2}$O$_{3}$ layers with β-Ga$_{2}$O$_{3}$. Finally, DFT modeling predicts that bulk μ-Fe$_{2}$O$_{3}$ is antiferromagnetic, while the interface region between μ-Fe$_{2}$O$_{3}$ and β-Ga$_{2}$O$_{3}$ leads to ferromagnetic coupling between interface Fe$^{3+}$ cations selectively occupying tetrahedral positions. Magnetic hysteresis persisting to room temperature is observed via SQUID measurements, consistent with the computationally predicted interface magnetism.
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Submitted 9 September, 2019; v1 submitted 15 January, 2019;
originally announced January 2019.
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Tunnel Junction Enhanced Nanowire Ultraviolet Light Emitting Diodes
Authors:
A. T. M. Golam Sarwar,
Brelon J. May,
Roberto C. Myers
Abstract:
Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The c…
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Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ~6V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 microwatts of UV emission at ~310 nm is measured with external quantum efficiency in the range of 4 - 6 m%. The realization of tunnel junction within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.
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Submitted 1 July, 2015;
originally announced July 2015.
