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Electric field effects on the band gap and edge states of monolayer 1T'-WTe2
Authors:
Yulia Maximenko,
Yueqing Chang,
Guannan Chen,
Mark R. Hirsbrunner,
Waclaw Swiech,
Taylor L. Hughes,
Lucas K. Wagner,
Vidya Madhavan
Abstract:
Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconventional, potentially topological superconducting state upon tuning the carrier concentration with gating. However, despite extensive studies, the effe…
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Monolayer 1T'-WTe2 is a quantum spin Hall insulator with a gapped bulk and gapless helical edge states persisting to temperatures around 100 K. Recent studies have revealed a topological-to-trivial phase transition as well the emergence of an unconventional, potentially topological superconducting state upon tuning the carrier concentration with gating. However, despite extensive studies, the effects of gating on the band structure and the helical edge states have not yet been established. In this work we present a combined low-temperature STM and first principles study of back-gated monolayer 1T'-WTe2 films grown on graphene. Consistent with a quantum spin Hall system, the films show well-defined bulk gaps and clear edge states that span the gap. By directly measuring the density of states with STM spectroscopy, we show that the bulk band gap magnitude shows substantial changes with applied gate voltage, which is contrary to the naïve expectation that a gate would rigidly shift the bands relative to the Fermi level. To explain our data, we carry out density functional theory and model Hamiltonian calculations which show that a gate electric field causes do** and inversion symmetry breaking which polarizes and spin-splits the bulk bands. Interestingly, the calculated spin splitting from the effective Rashba-like spin-orbit coupling can be in the tens of meV for the electric fields in the experiment, which may be useful for spintronics applications. Our work reveals the strong effect of electric fields on the bulk band structure of monolayer 1T'-WTe2, which will play a critical role in our understanding of gate-induced phenomena in this system.
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Submitted 19 November, 2020;
originally announced November 2020.
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The Future of the Correlated Electron Problem
Authors:
A. Alexandradinata,
N. P. Armitage,
Andrey Baydin,
Wenli Bi,
Yue Cao,
Hitesh J. Changlani,
Eli Chertkov,
Eduardo H. da Silva Neto,
Luca Delacretaz,
Ismail El Baggari,
G. M. Ferguson,
William J. Gannon,
Sayed Ali Akbar Ghorashi,
Berit H. Goodge,
Olga Goulko,
G. Grissonnanche,
Alannah Hallas,
Ian M. Hayes,
Yu He,
Edwin W. Huang,
Anshul Kogar,
Divine Kumah,
Jong Yeon Lee,
A. Legros,
Fahad Mahmood
, et al. (22 additional authors not shown)
Abstract:
A central problem in modern condensed matter physics is the understanding of materials with strong electron correlations. Despite extensive work, the essential physics of many of these systems is not understood and there is very little ability to make predictions in this class of materials. In this manuscript we share our personal views on the major open problems in the field of correlated electro…
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A central problem in modern condensed matter physics is the understanding of materials with strong electron correlations. Despite extensive work, the essential physics of many of these systems is not understood and there is very little ability to make predictions in this class of materials. In this manuscript we share our personal views on the major open problems in the field of correlated electron systems. We discuss some possible routes to make progress in this rich and fascinating field. This manuscript is the result of the vigorous discussions and deliberations that took place at Johns Hopkins University during a three-day workshop January 27, 28, and 29, 2020 that brought together six senior scientists and 46 more junior scientists. Our hope, is that the topics we have presented will provide inspiration for others working in this field and motivation for the idea that significant progress can be made on very hard problems if we focus our collective energies.
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Submitted 13 July, 2022; v1 submitted 1 October, 2020;
originally announced October 2020.
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Do** induced Mott collapse and the density wave instabilities in (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$
Authors:
Zhenyu Wang,
Daniel Walkup,
Yulia Maximenko,
Wenwen Zhou,
Tom Hogan,
Ziqiang Wang,
Stephen D. Wilson,
Vidya Madhavan
Abstract:
The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena in the curates is the difficulty in accessing do**…
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The path from a Mott insulating phase to high temperature superconductivity encounters a rich set of unconventional phenomena involving the insulator-to-metal transition (IMT) such as emergent electronic orders and pseudogaps that ultimately affect the condensation of Cooper pairs. A huge hindrance to understanding the origin of these phenomena in the curates is the difficulty in accessing do** levels near the parent state. Recently, the J$_{eff}$=1/2 Mott state of the perovskite strontium iridates has revealed intriguing parallels to the cuprates, with the advantage that it provides unique access to the Mott transition. Here, we exploit this accessibility to study the IMT and the possible nearby electronic orders in the electron-doped bilayer iridate (Sr$_{1-x}$La$_x$)$_3$Ir$_2$O$_7$. Using spectroscopic imaging scanning tunneling microscopy, we image the La dopants in the top as well as the interlayer SrO planes. Surprisingly, we find a disproportionate distribution of La in these layers with the interlayer La being primarily responsible for the IMT, thereby revealing the distinct site-dependent effects of dopants on the electronic properties of bilayer systems. Furthermore, we discover the coexistence of two electronic orders generated by electron do**: a unidirectional electronic order with a concomitant structural distortion; and local resonant states forming a checkerboard-like pattern trapped by La. This provides evidence that multiple charge orders may exist simultaneously in Mott systems, even with only one band crossing the Fermi energy.
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Submitted 15 May, 2019;
originally announced May 2019.
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Topological nature of step edge states on the surface of topological crystalline insulator Pb$_{0.7}$Sn$_{0.3}$Se
Authors:
Davide Iaia,
Chang-Yan Wang,
Yulia Maximenko,
Daniel Walkup,
R. Sankar,
Fangcheng Chou,
Yuan-Ming Lu,
Vidya Madhavan
Abstract:
In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of one-dimensional (1D) bound states localized at step edges of the [001] surface of a topological crystalline insulator (TCI) Pb$_{0.7}$Sn$_{0.3}$Se, b…
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In addition to novel surface states, topological insulators can also exhibit robust gapless states at crystalline defects. Step edges constitute a class of common defects on the surface of crystals. In this work we establish the topological nature of one-dimensional (1D) bound states localized at step edges of the [001] surface of a topological crystalline insulator (TCI) Pb$_{0.7}$Sn$_{0.3}$Se, both theoretically and experimentally. We show that the topological stability of the step edge states arises from an emergent particle-hole symmetry of the surface low-energy physics, and demonstrate the experimental signatures of the particle-hole symmetry breaking. We also reveal the effects of an external magnetic field on the 1D bound states. Our work suggests the possibility of similar topological step edge modes in other topological materials with a rocks-salt structure.
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Submitted 25 January, 2019; v1 submitted 27 September, 2018;
originally announced September 2018.
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Defect Role in the Carrier Tunable Topological Insulator (Bi$_{1-x}$Sb$_x$)$_2$Te$_3$ Thin Films
Authors:
Kane L Scipioni,
Zhenyu Wang,
Yulia Maximenko,
Ferhat Katmis,
Charlie Steiner,
Vidya Madhavan
Abstract:
Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surfa…
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Alloys of Bi$_2$Te$_3$ and Sb$_2$Te$_3$ ((Bi$_{1-x}$Sb$_x$)$_2$Te$_3$) have played an essential role in the exploration of topological surface states, allowing us to study phenomena that would otherwise be obscured by bulk contributions to conductivity. Thin films of these alloys have been particularly important for tuning the energy of the Fermi level, a key step in observing spin-polarized surface currents and the quantum anomalous Hall effect. Previous studies reported the chemical tuning of the Fermi level to the Dirac point by controlling the Sb:Bi composition ratio, but the optimum ratio varies widely across various studies with no consensus. In this work, we use scanning tunneling microscopy and Landau level spectroscopy, in combination with X-ray photoemission spectroscopy to isolate the effects of growth factors such as temperature and composition, and to provide a microscopic picture of the role that disorder and composition play in determining the carrier density of epitaxially grown (Bi,Sb)$_2$Te$_3$ thin films. Using Landau level spectroscopy, we determine that the ideal Sb concentration to place the Fermi energy to within a few meV of the Dirac point is $x\sim 0.7$. However, we find that the post- growth annealing temperature can have a drastic impact on microscopic structure as well as carrier density. In particular, we find that when films are post-growth annealed at high temperature, better crystallinity and surface roughness are achieved; but this also produces a larger Te defect density, adding n-type carriers. This work provides key information necessary for optimizing thin film quality in this fundamentally and technologically important class of materials.
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Submitted 26 September, 2017;
originally announced September 2017.
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Enhanced UV light detection using wavelength-shifting properties of Silicon nanoparticles
Authors:
S. Magill,
M. Nayfeh,
M. Fizari,
J. Malloy,
Y. Maximenko,
J. Xie,
H. Yu
Abstract:
Detection of UV photons is becoming increasingly necessary with the use of noble gases and liquids in elementary particle experiments. Cerenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments all require sensitivity to UV photons. New sensor materials are needed that can directly detect UV photons and/or absorb UV photons and re-emit light in…
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Detection of UV photons is becoming increasingly necessary with the use of noble gases and liquids in elementary particle experiments. Cerenkov light in crystals and glasses, scintillation light in neutrino, dark matter, and rare decay experiments all require sensitivity to UV photons. New sensor materials are needed that can directly detect UV photons and/or absorb UV photons and re-emit light in the visible range measurable by existing photosensors. It has been shown that silicon nanoparticles are sensitive to UV light in a wavelength range around ~200 nm. UV light is absorbed and re-emitted at wavelengths in the visible range depending on the size of the nanoparticles. Initial tests of the wavelength-shifting properties of silicon nanoparticles are presented here that indicate by placing a film of nanoparticles in front of a standard visible-wavelength detecting photosensor, the response of the sensor is significantly enhanced at wavelengths < 320 nm.
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Submitted 27 March, 2015; v1 submitted 4 March, 2015;
originally announced March 2015.
