Showing 1–44 of 44 results for author: Maurand, R

Unifying Floquet theory of longitudinal and dispersive readout

Authors: Alessandro Chessari, Esteban A. Rodríguez-Mena, José Carlos Abadillo-Uriel, Victor Champain, Simon Zihlmann, Romain Maurand, Yann-Michel Niquet, Michele Filippone

Abstract: We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of… ▽ More We devise a Floquet theory of longitudinal and dispersive readout in circuit QED. By studying qubits coupled to cavity photons and driven at the resonance frequency of the cavity $ω_{\rm r}$, we establish a universal connection between the qubit AC Stark shift and the longitudinal and dispersive coupling to photons. We find that the longitudinal coupling $g_\parallel$ is controlled by the slope of the AC Stark shift as function of the driving strength $A_{\rm q}$, while the dispersive shift $χ$ depends on its curvature. The two quantities become proportional to each other in the weak drive limit ($A_{\rm q}\rightarrow 0$). Our approach unifies the adiabatic limit ($ω_{\rm r}\rightarrow 0$) -- where $g_\parallel$ is generated by the static spectrum curvature (or quantum capacitance) -- with the diabatic one, where the static spectrum plays no role. We derive analytical results supported by exact numerical simulations. We apply them to superconducting and spin-hybrid cQED systems, showcasing the flexibility of faster-than-dispersive longitudinal readout. △ Less

Submitted 3 July, 2024; originally announced July 2024.

Comments: 5 pages + supplementary material (14 pages)

Gate- and flux-tunable sin(2$\varphi$) Josephson element with proximitized Ge-based junctions

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Frederic Gustavo, Jean-Luc Thomassin, Boris Brun, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Etienne Dumur, Silvano De Franceschi, Francois Lefloch

Abstract: Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson… ▽ More Hybrid superconductor-semiconductor Josephson field-effect transistors (JoFETs) function as Josephson junctions with a gate-tunable critical current. Additionally, they can feature a non-sinusoidal current-phase relation (CPR) containing multiple harmonics of the superconducting phase difference, a so-far underutilized property. In this work, we exploit this multi-harmonicity to create a Josephson circuit element with an almost perfectly $π$-periodic CPR, indicative of a largely dominant charge-4e supercurrent transport. Such a Josephson element was recently proposed as the basic building block of a protected superconducting qubit. Here, it is realized using a superconducting quantum interference device (SQUID) with low-inductance aluminum arms and two nominally identical JoFETs. The latter are fabricated from a SiGe/Ge/SiGe quantum-well heterostructure embedding a high-mobility two-dimensional hole gas. By carefully adjusting the JoFET gate voltages and finely tuning the magnetic flux through the SQUID close to half a flux quantum, we achieve a regime where the $\sin(2\varphi)$ component accounts for more than \SI{95}{\percent} of the total supercurrent. This result demonstrates a new promising route for the realization of superconducting qubits with enhanced coherence properties. △ Less

Submitted 17 June, 2024; v1 submitted 23 May, 2024; originally announced May 2024.

From nonreciprocal to charge-4e supercurrents in Ge-based Josephson devices with tunable harmonic content

Authors: Axel Leblanc, Chotivut Tangchingchai, Zahra Sadre Momtaz, Elyjah Kiyooka, Jean-Michel Hartmann, Gonzalo Troncoso Fernandez-Bada, Boris Brun-Barriere, Vivien Schmitt, Simon Zihlmann, Romain Maurand, Étienne Dumur, Silvano De Franceschi, François Lefloch

Abstract: Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an exp… ▽ More Hybrid superconductor(S)-semiconductor(Sm) devices bring a range of new functionalities into superconducting circuits. In particular, hybrid parity-protected qubits and Josephson diodes were recently proposed and experimentally demonstrated. Such devices leverage the non-sinusoidal character of the Josephson current-phase relation (CPR) in highly transparent S-Sm-S junctions. Here we report an experimental study of superconducting quantum-interference devices (SQUIDs) embedding Josephson field-effect transistors fabricated from a SiGe/Ge/SiGe heterostructure grown on a 200-mm silicon wafer. The single-junction CPR shows up to three harmonics with gate tunable amplitude. In the presence of microwave irradiation, the ratio of the first two dominant harmonics, corresponding to single and double Cooper-pair transport processes, is consistently reflected in relative weight of integer and half-integer Shapiro steps. A combination of magnetic-flux and gate-voltage control enables tuning the SQUID functionality from a nonreciprocal Josephson-diode regime with 27% asymmetry to a $π$-periodic Josephson regime suitable for the implementation of parity-protected superconducting qubits. These results illustrate the potential of Ge-based hybrid devices as versatile and scalable building blocks of novel superconducting quantum circuits. △ Less

Submitted 26 November, 2023; originally announced November 2023.

Comments: 8 pages, 5 figures

Real-time milli-Kelvin thermometry in a semiconductor qubit architecture

Authors: Victor Champain, Vivien Schmitt, Benoit Bertrand, Heimanu Niebojewski, Romain Maurand, Xavier Jehl, Clemens Winkelmann, Silvano De Franceschi, Boris Brun

Abstract: We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short m… ▽ More We report local time-resolved thermometry in a silicon nanowire quantum dot device designed to host a linear array of spin qubits. Using two alternative measurement schemes based on rf reflectometry, we are able to probe either local electron or phonon temperatures with $μ$s-scale time resolution and a noise equivalent temperature of $3$ $\rm mK/\sqrt{\rm Hz}$. Following the application of short microwave pulses, causing local periodic heating, time-dependent thermometry can track the dynamics of thermal excitation and relaxation, revealing clearly different characteristic time scales. This work opens important prospects to investigate the out-of-equilibrium thermal properties of semiconductor quantum electronic devices operating at very low temperature. In particular, it may provide a powerful handle to understand heating effects recently observed in semiconductor spin-qubit systems. △ Less

Submitted 20 June, 2024; v1 submitted 24 August, 2023; originally announced August 2023.

Comments: 7 pages 4 figures (supp. mat. 6 pages and 5 figures)

Journal ref: Phys. Rev. Applied 21, 064039 (2024)

RF simulation platform of qubit control using FDSOI technology for quantum computing

Authors: H. Jacquinot, R. Maurand, G. Troncoso Fernandez Bada, B. Bertrand, M. Cassé, Y. M. Niquet, S. de Franceschi, T. Meunier, M. Vinet

Abstract: In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the mag… ▽ More In this paper, we report on simulations of an Electron Spin Resonance (ESR) RF control line for semiconductor electron spin qubits. The simulation includes both the ESR line characteristics (geometry and configuration, stack and material properties) and the electromagnetic (EM) environment at the vicinity of the qubits such as gates and interconnect network. With the accurate assessment of the magnetic and electric field distribution, we found that the EM environment of the qubits contributes significantly to the ESR line efficiency for spin control characterized by the magnetic over electric field ratio generated at the qubit location. △ Less

Submitted 7 April, 2023; originally announced April 2023.

Comments: 11 pages, 8 figures, Solid State Electronics (2022)

Strong coupling between a photon and a hole spin in silicon

Authors: Cécile X. Yu, Simon Zihlmann, José C. Abadillo-Uriel, Vincent P. Michal, Nils Rambal, Heimanu Niebojewski, Thomas Bedecarrats, Maud Vinet, Etienne Dumur, Michele Filippone, Benoit Bertrand, Silvano De Franceschi, Yann-Michel Niquet, Romain Maurand

Abstract: Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a supe… ▽ More Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout and long-range, on-chip connectivity, well beyond nearest-neighbor quantum interactions. Here we demonstrate strong coupling between a microwave photon in a superconducting resonator and a hole spin in a silicon-based double quantum dot issued from a foundry-compatible MOS fabrication process. By leveraging the strong spin-orbit interaction intrinsically present in the valence band of silicon, we achieve a spin-photon coupling rate as high as 330~MHz largely exceeding the combined spin-photon decoherence rate. This result, together with the recently demonstrated long coherence of hole spins in silicon, opens a new realistic pathway to the development of circuit quantum electrodynamics with spins in semiconductor quantum dots. △ Less

Submitted 9 May, 2023; v1 submitted 28 June, 2022; originally announced June 2022.

Comments: 7 pages, 4 figures of main text, 19 pages, 12 figures of supplementary material

Journal ref: Nature Nanotechnology 18, 741-746 (2023)

Tunable hole spin-photon interaction based on g-matrix modulation

Authors: V. P. Michal, J. C. Abadillo-Uriel, S. Zihlmann, R. Maurand, Y. -M. Niquet, M. Filippone

Abstract: We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the appl… ▽ More We consider a spin circuit-QED device where a superconducting microwave resonator is capacitively coupled to a single hole confined in a semiconductor quantum dot. Thanks to the strong spin-orbit coupling intrinsic to valence-band states, the gyromagnetic g-matrix of the hole can be modulated electrically. This modulation couples the photons in the resonator to the hole spin. We show that the applied gate voltages and the magnetic-field orientation enable a versatile control of the spin-photon interaction, whose character can be switched from fully transverse to fully longitudinal. The longitudinal coupling is actually maximal when the transverse one vanishes and vice-versa. This "reciprocal sweetness" results from geometrical properties of the g-matrix and protects the spin against dephasing or relaxation. We estimate coupling rates reaching ~ 10 MHz in realistic settings and discuss potential circuit-QED applications harnessing either the transverse or the longitudinal spin-photon interaction. Furthermore, we demonstrate that the g-matrix curvature can be used to achieve parametric longitudinal coupling with enhanced coherence. △ Less

Submitted 31 January, 2023; v1 submitted 1 April, 2022; originally announced April 2022.

Journal ref: Phys. Rev. B 107, L041303 (2023)

A single hole spin with enhanced coherence in natural silicon

Authors: N. Piot, B. Brun, V. Schmitt, S. Zihlmann, V. P. Michal, A. Apra, J. C. Abadillo-Uriel, X. Jehl, B. Bertrand, H. Niebojewski, L. Hutin, M. Vinet, M. Urdampilleta, T. Meunier, Y. -M. Niquet, R. Maurand, S. De Franceschi

Abstract: Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a… ▽ More Semiconductor spin qubits based on spin-orbit states are responsive to electric field excitation allowing for practical, fast and potentially scalable qubit control. Spin-electric susceptibility, however, renders these qubits generally vulnerable to electrical noise, which limits their coherence time. Here we report on a spin-orbit qubit consisting of a single hole electrostatically confined in a natural silicon metal-oxide-semiconductor device. By varying the magnetic field orientation, we reveal the existence of operation sweet spots where the impact of charge noise is minimized while preserving an efficient electric-dipole spin control. We correspondingly observe an extension of the Hahn-echo coherence time up to 88 $μ$s, exceeding by an order of magnitude the best reported values for hole-spin qubits, and approaching the state-of-the-art for electron spin qubits with synthetic spin-orbit coupling in isotopically-purified silicon. This finding largely enhances the prospects of silicon-based hole spin qubits for scalable quantum information processing. △ Less

Submitted 25 September, 2022; v1 submitted 21 January, 2022; originally announced January 2022.

Journal ref: Nature Nanotechnology 17, 1072-1077 (2022)

Spin-valley coupling anisotropy and noise in CMOS quantum dots

Authors: Cameron Spence, Bruna Cardoso Paz, Bernhard Klemt, Emmanuel Chanrion, David J. Niegemann, Baptiste Jadot, Vivien Thiney, Benoit Bertrand, Heimanu Niebojewski, Pierre-André Mortemousque, Xavier Jehl, Romain Maurand, Silvano De Franceschi, Maud Vinet, Franck Balestro, Christopher Bäuerle, Yann-Michel Niquet, Tristan Meunier, Matias Urdampilleta

Abstract: One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire devi… ▽ More One of the main advantages of silicon spin qubits over other solid-state qubits is their inherent scalability and compatibility with the 300 mm CMOS fabrication technology that is already widely used in the semiconductor industry, whilst maintaining high readout and gate fidelities. We demonstrate detection of a single electron spin using energy-selective readout in a CMOS-fabricated nanowire device with an integrated charge detector. We measure a valley splitting of 0.3 meV and 0.16 meV in two similar devices. The anisotropy of the spin-valley mixing is measured and shown to follow the dependence expected from the symmetry of the local confinement, indicating low disorder in the region of the quantum dot. Finally the charge noise in the spin-valley coupling regime is investigated and found to induce fluctuations in the qubit energy in the range of $0.6GHz/\sqrt{Hz}$. △ Less

Submitted 28 September, 2021; originally announced September 2021.

Comments: 4 figures

Dispersively probed microwave spectroscopy of a silicon hole double quantum dot

Authors: Rami Ezzouch, Simon Zihlmann, Vincent P. Michal, **g Li, Agostino Aprá, Benoit Bertrand, Louis Hutin, Maud Vinet, Matias Urdampilleta, Tristan Meunier, Xavier Jehl, Yann-Michel Niquet, Marc Sanquer, Silvano De Franceschi, Romain Maurand

Abstract: Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layou… ▽ More Owing to ever increasing gate fidelities and to a potential transferability to industrial CMOS technology, silicon spin qubits have become a compelling option in the strive for quantum computation. In a scalable architecture, each spin qubit will have to be finely tuned and its operating conditions accurately determined. In this prospect, spectroscopic tools compatible with a scalable device layout are of primary importance. Here we report a two-tone spectroscopy technique providing access to the spin-dependent energy-level spectrum of a hole double quantum dot defined in a split-gate silicon device. A first GHz-frequency tone drives electric-dipole spin resonance enabled by the valence-band spin-orbit coupling. A second lower-frequency tone (approximately 500 MHz) allows for dispersive readout via rf-gate reflectometry. We compare the measured dispersive response to the linear response calculated in an extended Jaynes-Cummings model and we obtain characteristic parameters such as g-factors and tunnel/spin-orbit couplings for both even and odd occupation. △ Less

Submitted 28 January, 2021; v1 submitted 31 December, 2020; originally announced December 2020.

Journal ref: Phys. Rev. Applied 16, 034031 (2021)

Magnetic field resilient high kinetic inductance superconducting niobium nitride coplanar waveguide resonators

Authors: Cécile Xinqing Yu, Simon Zihlmann, Gonzalo Troncoso Fernández-Bada, Jean-Luc Thomassin, Frédéric Gustavo, Étienne Dumur, Romain Maurand

Abstract: We characterize niobium nitride (NbN) $λ/2$ coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films grown at 120°C we report a superconducting critical temperature of 7.4K associated with a normal square resistance of 1k$Ω$ leading to a kinetic inductance of 192pH/$\Box$. We fabricated resonators with a characteristic im… ▽ More We characterize niobium nitride (NbN) $λ/2$ coplanar waveguide resonators, which were fabricated from a 10nm thick film on silicon dioxide grown by sputter deposition. For films grown at 120°C we report a superconducting critical temperature of 7.4K associated with a normal square resistance of 1k$Ω$ leading to a kinetic inductance of 192pH/$\Box$. We fabricated resonators with a characteristic impedance up to 4.1k$Ω$ and internal quality factors $Q_\mathrm{i} > 10^4$ in the single photon regime at zero magnetic field. Moreover, in the many photons regime, the resonators present high magnetic field resilience with $Q_\mathrm{i} > 10^4$ in a 6T in-plane magnetic field as well as in a 300mT out-of-plane magnetic field. These findings make such resonators a compelling choice for cQED experiments involving quantum systems with small electric dipole moments operated in finite magnetic fields. △ Less

Submitted 9 February, 2021; v1 submitted 8 December, 2020; originally announced December 2020.

Journal ref: Appl. Phys. Lett. 118, 054001 (2021)

Charge detection in an array of CMOS quantum dots

Authors: Emmanuel Chanrion, David J. Niegemann, Benoit Bertrand, Cameron Spence, Baptiste Jadot, **g Li, Pierre-André Mortemousque, Louis Hutin, Romain Maurand, Xavier Jehl, Marc Sanquer, Silvano De Franceschi, Christopher Bäuerle, Franck Balestro, Yann-Michel Niquet, Maud Vinet, Tristan Meunier, Matias Urdampilleta

Abstract: The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state an… ▽ More The recent development of arrays of quantum dots in semiconductor nanostructures highlights the progress of quantum devices toward large scale. However, how to realize such arrays on a scalable platform such as silicon is still an open question. One of the main challenge resides in the detection of charges within the array. It is a prerequisite functionality to initialize a desired charge state and readout spins through spin-to-charge conversion mechanisms. In this paper, we use two methods based on either a single-lead charge detector, or a reprogrammable single electron transistor. Thanks to these methods, we study the charge dynamics and sensitivity by performing single shot detection of the charge. Finally, we can probe the charge stability at any node of a linear array and assess the Coulomb disorder in the structure. We find an electrochemical potential fluctuation induced by charge noise comparable to that reported in other silicon quantum dots. △ Less

Submitted 3 April, 2020; v1 submitted 2 April, 2020; originally announced April 2020.

Comments: 10 pages, 6 figures

Journal ref: Phys. Rev. Applied 14, 024066 (2020)

All-Electrical Control of an Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: Léo Bourdet, Louis Hutin, Benoit Bertrand, Andrea Corna, Heorhii Bohuslavskyi, Anthony Amisse, Alessandro Crippa, Romain Maurand, Sylvain Barraud, Matias Urdampilleta, Christopher Bäuerle, Tristan Meunier, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Yann-Michel Niquet, Maud Vinet

Abstract: We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valle… ▽ More We fabricated Quantum Dot (QD) devices using a standard SOI CMOS process flow, and demonstrated that the spin of confined electrons could be controlled via a local electrical-field excitation, owing to inter-valley spin-orbit coupling. We discuss that modulating the confinement geometry via an additional electrode may enable switching a quantum bit (qubit) between an electrically-addressable valley configuration and a protected spin configuration. This proposed scheme bears relevance to improve the trade-off between fast operations and slow decoherence for quantum computing on a Si qubit platform. Finally, we evoke the impact of process-induced variability on the operating bias range. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Comments: arXiv admin note: substantial text overlap with arXiv:1912.09806

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 11 , Nov. 2018 )

Gate reflectometry for probing charge and spin states in linear Si MOS split-gate arrays

Authors: L. Hutin, B. Bertrand, E. Chanrion, H. Bohuslavskyi, F. Ansaloni, T. -Y. Yang, J. Michniewicz, D. J. Niegemann, C. Spence, T. Lundberg, A. Chatterjee, A. Crippa, J. Li, R. Maurand, X. Jehl, M. Sanquer, M. F. Gonzalez-Zalba, F. Kuemmeth, Y. -M. Niquet, S. De Franceschi, M. Urdampilleta, T. Meunier, M. Vinet

Abstract: We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent qua… ▽ More We fabricated linear arrangements of multiple splitgate devices along an SOI mesa, thus forming a 2xN array of individually controllable Si quantum dots (QDs) with nearest neighbor coupling. We implemented two different gate reflectometry-based readout schemes to either probe spindependent charge movements by a coupled electrometer with single-shot precision, or directly sense a spin-dependent quantum capacitance. These results bear significance for fast, high-fidelity single-shot readout of large arrays of foundrycompatible Si MOS spin qubits. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2019 IEEE International Electron Devices Meeting (IEDM)

Towards scalable silicon quantum computing

Authors: M. Vinet, L. Hutin, B. Bertrand, S. Barraud, J. -M. Hartmann, Y. -J. Kim, V. Mazzocchi, A. Amisse, H. Bohuslavskyi, L. Bourdet, A. Crippa, X. Jehl, R. Maurand, Y. -M. Niquet, M. Sanquer, B. Venitucci, B. Jadot, E. Chanrion, P. -A. Mortemousque, C. Spence, M. Urdampilleta, S. De Franceschi, T. Meunier

Abstract: We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. We report the efforts and challenges dedicated towards building a scalable quantum computer based on Si spin qubits. We review the advantages of relying on devices fabricated in a thin film technology as their properties can be in situ tuned by the back gate voltage, which prefigures tuning capabilities in scalable qubits architectures. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE International Electron Devices Meeting (IEDM)

All-Electrical Control of a Hybrid Electron Spin/Valley Quantum Bit in SOI CMOS Technology

Authors: L. Hutin, L. Bourdet, B. Bertrand, A. Corna, H. Bohuslavskyi, A. Amisse, A. Crippa, R. Maurand, S. Barraud, M. Urdampilleta, C. Bäuerle, T. Meunier, M. Sanquer, X. Jehl, S. De Franceschi, Y. -M. Niquet, M. Vinet

Abstract: We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected config… ▽ More We successfully demonstrated experimentally the electrical-field-mediated control of the spin of electrons confined in an SOI Quantum Dot (QD) device fabricated with a standard CMOS process flow. Furthermore, we show that the Back-Gate control in SOI devices enables switching a quantum bit (qubit) between an electrically-addressable, yet charge noise-sensitive configuration, and a protected configuration. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2018 IEEE Symposium on VLSI Technology

Si CMOS Platform for Quantum Information Processing

Authors: L. Hutin, R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, X. Jehl, S. Barraud, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. We report the first quantum bit device implemented on a foundry-compatible Si CMOS platform. The device, fabricated using SOI NanoWire MOSFET technology, is in essence a compact two-gate pFET. The qubit is encoded in the spin degree of freedom of a hole Quantum Dot defined by one of the Gates. Coherent spin manipulation is performed by means of an RF E-Field signal applied to the Gate itself. △ Less

Submitted 20 December, 2019; originally announced December 2019.

Journal ref: 2016 IEEE Symposium on VLSI Technology

Control of single spin in CMOS devices and its application for quantum bits

Authors: R. Maurand, D. Kotekar-Patil, A. Corna, H. Bohuslavskyi, A. Crippa, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, S. De Franceschi, X. Jehl, M. Sanquer

Abstract: We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conv… ▽ More We show how to measure and manipulate a single spin in a CMOS device fabricated in a pre-industrial 300 mm CMOS foundry. The device can be used as a spin quantum bit working at very low temperature. The spin manipulation is done by a microwave electric field applied directly on a gate. The presented results are a proof-of-principle demonstration of the possibility to define qubits by means of conventional industrial fabrication processes. △ Less

Submitted 19 December, 2019; originally announced December 2019.

Comments: Published in "Emerging Devices for Low-Power and High-Performance Nanosystems; Physics, Novel Functions, and Data Processing" Edited by Simon Deleonibus, Pan Stanford Publisher 2018

SOI technology for quantum information processing

Authors: S. De Franceschi, L. Hutin, R. Maurand, L. Bourdet, H. Bohuslavskyi, A. Corna, D. Kotekar-Patil, S. Barraud, X. Jehl, Y. -M. Niquet, M. Sanquer, M. Vinet

Abstract: We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by… ▽ More We present recent progress towards the implementation of a scalable quantum processor based on fully-depleted silicon-on-insulator (FDSOI) technology. In particular, we discuss an approach where the elementary bits of quantum information - so-called qubits - are encoded in the spin degree of freedom of gate-confined holes in p-type devices. We show how a hole-spin can be efficiently manipulated by means of a microwave excitation applied to the corresponding confining gate. The hole spin state can be read out and reinitialized through a Pauli blockade mechanism. The studied devices are derived from silicon nanowire field-effect transistors. We discuss their prospects for scalability and, more broadly, the potential advantages of FDSOI technology. △ Less

Submitted 17 December, 2019; originally announced December 2019.

Comments: 4 pages, 13 figures, Invited contribution at IEDM 2016

Journal ref: 2016 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4

Cryogenic characterization of 28nm FD-SOI ring oscillators with energy efficiency optimization

Authors: H. Bohuslavskyi, S. Barraud, V. Barral, M. Cassé, L. Le Guevel, L. Hutin, B. Bertrand, A. Crippa, X. Jehl, G. Pillonnet, A. G. M. Jansen, F. Arnaud, P. Galy, R. Maurand, S. De Franceschi, M. Sanquer, M. Vinet

Abstract: Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low te… ▽ More Extensive electrical characterization of ring oscillators (ROs) made in high-$κ$ metal gate 28nm Fully-Depleted Silicon-on- Insulator (FD-SOI) technology is presented for a set of temperatures between 296 and 4.3K. First, delay per stage ($τ_P$), static current ($I_{STAT}$), and dynamic current ($I_{DYN}$) are analyzed for the case of the increase of threshold voltage ($V_{TH}$) observed at low temperature. Then, the same analysis is performed by compensating $V_{TH}$ to a constant, temperature independent value through forward body-biasing (FBB). Energy efficiency optimization is proposed for different supply voltages ($V_{DD}$) in order to find an optimal operating point combining both high RO frequencies and low power dissipation. We show that the Energy-Delay product ($EDP$) can be significantly reduced at low temperature by applying a forward body bias voltage ($V_{FBB}$). We demonstrate that outstanding performance of RO in terms of speed ($τ_P$=37ps) and static power (7nA/stage) can be achieved at 4.3K with $V_{DD}$ reduced down to 0.325V. △ Less

Submitted 14 March, 2019; originally announced March 2019.

Journal ref: IEEE Transactions on Electron Devices ( Volume: 65 , Issue: 9 , Sept. 2018 )

Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon

Authors: A. Crippa, R. Ezzouch, A. Aprá, A. Amisse, L. Houtin, B. Bertrand, M. Vinet, M. Urdampilleta, T. Meunier, M. Sanquer, X. Jehl, R. Maurand, S. De Franceschi

Abstract: Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using i… ▽ More Silicon spin qubits have emerged as a promising path to large-scale quantum processors. In this prospect, the development of scalable qubit readout schemes involving a minimal device overhead is a compelling step. Here we report the implementation of gate-coupled rf reflectometry for the dispersive readout of a fully functional spin qubit device. We use a p-type double-gate transistor made using industry-standard silicon technology. The first gate confines a hole quantum dot encoding the spin qubit, the second one a helper dot enabling readout. The qubit state is measured through the phase response of a lumped-element resonator to spin-selective interdot tunneling. The demonstrated qubit readout scheme requires no coupling to a Fermi reservoir, thereby offering a compact and potentially scalable solution whose operation may be extended above 1\,K. △ Less

Submitted 2 July, 2019; v1 submitted 11 November, 2018; originally announced November 2018.

Journal ref: Nature Communications 10, 2776 (2019)

Germanium quantum well Josephson field effect transistors and interferometers

Authors: Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz, XuHai Huang, Susheng Tan, Romain Maurand, Sergey Frolov, Amir Sammak, Giordano Scappucci, François Lefloch, Silvano De Franceschi

Abstract: Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum supe… ▽ More Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve to the realization of topological superconducting systems, as well as gate-tunable superconducting quantum bits. Here we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements in superconducting point-contact devices. Transmission electron microscopy reveals the diffusion of Ge into the aluminum contacts, whereas no aluminum is detected in the Ge channel. △ Less

Submitted 23 October, 2018; v1 submitted 11 October, 2018; originally announced October 2018.

Gate-Based High Fidelity Spin Read-out in a CMOS Device

Authors: Matias Urdampilleta, David J. Niegemann, Emmanuel Chanrion, Baptiste Jadot, Cameron Spence, Pierre-André Mortemousque, 1 Christopher Bäuerle, Louis Hutin, Benoit Bertrand, Sylvain Barraud, Romain Maurand, Marc Sanquer, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Tristan Meunier

Abstract: The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary d… ▽ More The engineering of electron spin qubits in a compact unit cell embedding all quantum functionalities is mandatory for large scale integration. In particular, the development of a high-fidelity and scalable spin readout method remains an open challenge. Here we demonstrate high-fidelity and robust spin readout based on gate reflectometry in a CMOS device comprising one qubit dot and one ancillary dot coupled to an electron reservoir to perform readout. This scalable method allows us to read out a spin with a fidelity above 99% for 1 ms integration time. To achieve such fidelity, we exploit a latched spin blockade mechanism that requires electron exchange between the ancillary dot and the reservoir. We show that the demonstrated high read-out fidelity is fully preserved up to 0.5 K. This results holds particular relevance for the future co-integration of spin qubits and classical control electronics. △ Less

Submitted 12 September, 2018; originally announced September 2018.

Comments: 6 pages, 4 figures

Ballistic one-dimensional holes with strong g-factor anisotropy in germanium

Authors: R. Mizokuchi, R. Maurand, F. Vigneau, M. Myronov, S. De Franceschi

Abstract: We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well pl… ▽ More We report experimental evidence of ballistic hole transport in one-dimensional quantum wires gate-defined in a strained SiGe/Ge/SiGe quantum well. At zero magnetic field, we observe conductance plateaus at integer multiples of 2e^2/h. At finite magnetic field, the splitting of these plateaus by Zeeman effect reveals largely anisotropic g-factors, with absolute values below 1 in the quantum-well plane, and exceeding 10 out of plane. This g-factor anisotropy is consistent with a heavy-hole character of the propagating valence-band states, in line with a predominant confinement in the growth direction. Remarkably, we observe quantized ballistic conductance in device channels up to 600 nm long. These findings mark an important step towards the realization of novel devices for applications in quantum spintronics. △ Less

Submitted 12 April, 2018; originally announced April 2018.

Electrical spin driving by $g$-matrix modulation in spin-orbit qubits

Authors: Alessandro Crippa, Romain Maurand, Léo Bourdet, Dharmraj Kotekar-Patil, Anthony Amisse, Xavier Jehl, Marc Sanquer, Romain Laviéville, Heorhii Bohuslavskyi, Louis Hutin, Sylvain Barraud, Maud Vinet, Yann-Michel Niquet, Silvano De Franceschi

Abstract: In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-… ▽ More In a semiconductor spin qubit with sizable spin-orbit coupling, coherent spin rotations can be driven by a resonant gate-voltage modulation. Recently, we have exploited this opportunity in the experimental demonstration of a hole spin qubit in a silicon device. Here we investigate the underlying physical mechanisms by measuring the full angular dependence of the Rabi frequency as well as the gate-voltage dependence and anisotropy of the hole $g$-factors. We show that a $g$-matrix formalism can simultaneously capture and discriminate the contributions of two mechanisms so far independently discussed in the literature: one associated with the modulation of the $g$ factors, and measurable by Zeeman energy spectroscopy, the other not. Our approach has a general validity and can be applied to the analysis of other types of spin-orbit qubits. △ Less

Submitted 4 April, 2018; v1 submitted 24 October, 2017; originally announced October 2017.

Comments: Letter format (4 pages, 4 figures). Detailed theory in Supplemenatl Material

Journal ref: Phys. Rev. Lett. 120, 137702 (2018)

Giant valley-isospin conductance oscillations in ballistic graphene

Authors: Clevin Handschin, Péter Makk, Peter Rickhaus, Romain Maurand, Kenji Watanabe, Takashi Taniguchi, Klaus Richter, Ming-Hao Liu, Christian Schönenberger

Abstract: At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzidło and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductanc… ▽ More At high magnetic fields the conductance of graphene is governed by the half-integer quantum Hall effect. By local electrostatic gating a \textit{p-n} junction perpendicular to the graphene edges can be formed, along which quantum Hall channels co-propagate. It has been predicted by Tworzidło and co-workers that if only the lowest Landau level is filled on both sides of the junction, the conductance is determined by the valley (isospin) polarization at the edges and by the width of the flake. This effect remained hidden so far due to scattering between the channels co-propagating along the \textit{p-n} interface (equilibration). Here we investigate \textit{p-n} junctions in encapsulated graphene with a movable \textit{p-n} interface with which we are able to probe the edge-configuration of graphene flakes. We observe large quantum conductance oscillations on the order of \si{e^2/h} which solely depend on the \textit{p-n} junction position providing the first signature of isospin-defined conductance. Our experiments are underlined by quantum transport calculations. △ Less

Submitted 31 August, 2017; originally announced August 2017.

Comments: 5 pages, 4 figures

Journal ref: Nano Letters,17,5389,(2017)

Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot

Authors: Andrea Corna, Léo Bourdet, Romain Maurand, Alessandro Crippa, Dharmraj Kotekar-Patil, Heorhii Bohuslavskyi, Romain Lavieville, Louis Hutin, Sylvain Barraud, Xavier Jehl, Maud Vinet, Silvano De Franceschi, Yann-Michel Niquet, Marc Sanquer

Abstract: The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC.… ▽ More The ability to manipulate electron spins with voltage-dependent electric fields is key to the operation of quantum spintronics devices, such as spin-based semiconductor qubits. A natural approach to electrical spin control exploits the spin-orbit coupling (SOC) inherently present in all materials. So far, this approach could not be applied to electrons in silicon, due to their extremely weak SOC. Here we report an experimental realization of electrically driven electron-spin resonance in a silicon-on-insulator (SOI) nanowire quantum dot device. The underlying driving mechanism results from an interplay between SOC and the multi-valley structure of the silicon conduction band, which is enhanced in the investigated nanowire geometry. We present a simple model capturing the essential physics and use tight-binding simulations for a more quantitative analysis. We discuss the relevance of our findings to the development of compact and scalable electron-spin qubits in silicon. △ Less

Submitted 7 February, 2018; v1 submitted 9 August, 2017; originally announced August 2017.

Journal ref: npj Quantum Information, 4(1), 6 (2018)

Hole weak anti-localization in a strained-Ge surface quantum well

Authors: R. Mizokuchi, P. Torresani, R. Maurand, M. Myronov, S. De Franceschi

Abstract: We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top… ▽ More We report a magneto-transport study of a two-dimensional hole gas confined to a strained Ge quantum well grown on a relaxed Si0.2Ge0.8 virtual substrate. The conductivity of the hole gas measured as a function of a perpendicular magnetic field exhibits a zero-field peak resulting from weak anti-localization. The peak develops and becomes stronger upon increasing the hole density by means of a top gate electrode. This behavior is consistent with a Rashba-type spin-orbit coupling whose strength is proportional to the perpendicular electric field, and hence to the carrier density. By fitting the weak anti-localization peak to a model including a dominant cubic spin-orbit coupling, we extract the characteristic transport time scales and a spin splitting energy of ~1 meV. Finally, we observe a weak anti-localization peak also for magnetic fields parallel to the quantum well and attribute this finding to a combined effect of surface roughness, Zeeman splitting, and virtual occupation of higher-energy hole subbands. △ Less

Submitted 12 April, 2017; v1 submitted 10 April, 2017; originally announced April 2017.

Level spectrum and charge relaxation in a silicon double quantum dot probed by dual-gate reflectometry

Authors: Alessandro Crippa, Romain Maurand, Dharmraj Kotekar-Patil, Andrea Corna, Heorhii Bohuslavskyi, Alexei O. Orlov, Patrick Fay, Romain Laviéville, Silvain Barraud, Maud Vinet, Marc Sanquer, Silvano De Franceschi, Xavier Jehl

Abstract: We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Char… ▽ More We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio-frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive response, we obtain the complete charge stability diagram of the device. Charge transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio-frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of charge transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot. △ Less

Submitted 19 January, 2017; v1 submitted 12 October, 2016; originally announced October 2016.

Comments: 7 pages, 4 figures

Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction

Authors: Heorhii Bohuslavskyi, Dharmraj Kotekar-Patil, Romain Maurand, Andrea Corna, Sylvain Barraud, Leo Bourdet, Louis Hutin, Yann-Michel Niquet, Xavier Jehl, Silvano De Franceschi, Maud Vinet, Marc Sanquer

Abstract: We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz… ▽ More We report on hole compact double quantum dots fabricated using conventional CMOS technology. We provide evidence of Pauli spin blockade in the few hole regime which is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate $\approx$120\,kHz for the first holes, an important step towards a robust hole spin-orbit qubit. △ Less

Submitted 22 September, 2016; v1 submitted 1 July, 2016; originally announced July 2016.

Pauli spin blockade in CMOS double quantum dot devices

Authors: D. Kotekar-Patil, A. Corna, R. Maurand, A. Crippa, A. Orlov, S. Barraud, X. Jehl, S. De Franceschi, M. Sanquer

Abstract: Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as… ▽ More Silicon quantum dots are attractive candidates for the development of scalable, spin-based qubits. Pauli spin blockade in double quantum dots provides an efficient, temperature independent mechanism for qubit readout. Here we report on transport experiments in double gate nanowire transistors issued from a CMOS process on 300 mm silicon-on-insulator wafers. At low temperature the devices behave as two few-electron quantum dots in series. We observe signatures of Pauli spin blockade with a singlet-triplet splitting ranging from 0.3 to 1.3 meV. Magneto-transport measurements show that transitions which conserve spin are shown to be magnetic-field independent up to B = 6 T. △ Less

Submitted 24 April, 2017; v1 submitted 19 June, 2016; originally announced June 2016.

Comments: 5 pages , 4 figures

Journal ref: Phys. Status Solidi B, 254: n/a, 1600581 (2017)

A CMOS silicon spin qubit

Authors: R. Maurand, X. Jehl, D. Kotekar Patil, A. Corna, H. Bohuslavskyi, R. Laviéville, L. Hutin, S. Barraud, M. Vinet, M. Sanquer, S. De Franceschi

Abstract: Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silic… ▽ More Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot (QD) encoding a hole spin qubit, the second one a QD used for the qubit readout. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. Our result opens a viable path to qubit up-scaling through a readily exploitable CMOS platform. △ Less

Submitted 24 May, 2016; originally announced May 2016.

Comments: 12 pages, 4 figures

Electrical control of g-factors in a few-hole silicon nanowire MOSFET

Authors: B. Voisin, R. Maurand, S. Barraud, M. Vinet, X. Jehl, M. Sanquer, J. Renard, S. De Franceschi

Abstract: Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole qua… ▽ More Hole spins in silicon represent a promising yet barely explored direction for solid-state quantum computation, possibly combining long spin coherence, resulting from a reduced hyperfine interaction, and fast electrically driven qubit manipulation. Here we show that a silicon-nanowire field-effect transistor based on state-of-the-art silicon-on-insulator technology can be operated as a few-hole quantum dot. A detailed magnetotransport study of the first accessible hole reveals a g-factor with unexpectedly strong anisotropy and gate dependence. We infer that these two characteristics could enable an electrically-driven g-tensor-modulation spin resonance with Rabi frequencies exceeding several hundred MHz. △ Less

Submitted 25 November, 2015; originally announced November 2015.

Comments: 15 pages, 3 figures

Guiding of Electrons in a Few Mode Ballistic Graphene Channel

Authors: Peter Rickhaus, Ming-Hao Liu, Péter Makk, Romain Maurand, Samuel Hess, Simon Zihlmann, Markus Weiss, Klaus Richter, Christian Schönenberger

Abstract: In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until… ▽ More In graphene, the extremely fast charge carriers can be controlled by electron-optical elements, such as waveguides, in which the transmissivity is tuned by the wavelength. In this work, charge carriers are guided in a suspended ballistic few-mode graphene channel, defined by electrostatic gating. By depleting the channel, a reduction of mode number and steps in the conductance are observed, until the channel is completely emptied. The measurements are supported by tight-binding transport calculations including the full electrostatics of the sample. △ Less

Submitted 9 September, 2015; originally announced September 2015.

Comments: Including supporting information

Journal ref: Nano Letters, 15 (9), 5819, 2015

Snake Trajectories in Ultraclean Graphene p-n Junctions

Authors: Peter Rickhaus, Péter Makk, Ming-Hao Liu, Endre Tóvári, Markus Weiss, Romain Maurand, Klaus Richter, Christian Schönenberger

Abstract: Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. Whereas the former has been demonstrated in GaAs-AlGaAs heterostructures, the latter has become conceivable only with the advance of ballistic graphene where a gapless p-n… ▽ More Snake states are trajectories of charge carriers curving back and forth along an interface. There are two types of snake states, formed by either inverting the magnetic field direction or the charge carrier type at an interface. Whereas the former has been demonstrated in GaAs-AlGaAs heterostructures, the latter has become conceivable only with the advance of ballistic graphene where a gapless p-n interface governed by Klein tunneling can be formed. Such snake states were hidden in previous experiments due to limited sample quality. Here we report on magneto-conductance oscillations due to snake states in a ballistic suspended graphene p-n-junction which occur already at a very small magnetic field of 20mT. The visibility of 30% is enabled by Klein collimation. Our finding is firmly supported by quantum transport simulations. We demonstrate the high tunability of the device and operate it in different magnetic field regimes △ Less

Submitted 6 February, 2015; originally announced February 2015.

Comments: Accepted for publication in Nature Communications

Journal ref: Nature Communications 6, 6470 (2015)

Fabrication of ballistic suspended graphene with local-gating

Authors: Romain Maurand, Peter Rickhaus, Peter Makk, Samuel Hess, Endre Tovari, Clevin Handschin, Markus Weiss, Christian Schonenberger

Abstract: Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the ba… ▽ More Herein we discuss the fabrication of ballistic suspended graphene nanostructures supplemented with local gating. Using in-situ current annealing, we show that exceptional high mobilities can be obtained in these devices. A detailed description is given of the fabrication of bottom and different top-gate structures, which enable the realization of complex graphene structures. We have studied the basic building block, the p-n junction in detail, where a striking oscillating pattern was observed, which can be traced back to Fabry-Perot oscillations that are localized in the electronic cavities formed by the local gates. Finally we show some examples how the method can be extended to incorporate multi-terminal junctions or shaped graphene. The structures discussed here enable the access to electron-optics experiments in ballistic graphene. △ Less

Submitted 16 September, 2014; originally announced September 2014.

Journal ref: Carbon, 79, 486 (2014)

Scalable Tight-Binding Model for Graphene

Authors: Ming-Hao Liu, Peter Rickhaus, Péter Makk, Endre Tóvári, Romain Maurand, Fedor Tkatschenko, Markus Weiss, Christian Schönenberger, Klaus Richter

Abstract: Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using "theoretical artificial graphene." To prove this, we first derive a simple condition, along with its restrictions, to… ▽ More Artificial graphene consisting of honeycomb lattices other than the atomic layer of carbon has been shown to exhibit electronic properties similar to real graphene. Here, we reverse the argument to show that transport properties of real graphene can be captured by simulations using "theoretical artificial graphene." To prove this, we first derive a simple condition, along with its restrictions, to achieve band structure invariance for a scalable graphene lattice. We then present transport measurements for an ultraclean suspended single-layer graphene pn junction device, where ballistic transport features from complex Fabry-Pérot interference (at zero magnetic field) to the quantum Hall effect (at unusually low field) are observed and are well reproduced by transport simulations based on properly scaled single-particle tight-binding models. Our findings indicate that transport simulations for graphene can be efficiently performed with a strongly reduced number of atomic sites, allowing for reliable predictions for electric properties of complex graphene devices. We demonstrate the capability of the model by applying it to predict so-far unexplored gate-defined conductance quantization in single-layer graphene. △ Less

Submitted 22 January, 2015; v1 submitted 21 July, 2014; originally announced July 2014.

Comments: published version, with supplemental material

Journal ref: Phys. Rev. Lett. 114, 036601 (2015)

Large-scale BN tunnel barriers for graphene spintronics

Authors: Wangyang Fu, Péter Makk, Romain Maurand, Matthias Bräuninger, Christian Schönenberger

Abstract: We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the… ▽ More We have fabricated graphene spin-valve devices utilizing scalable materials made from chemical vapor deposition (CVD). Both the spin-transporting graphene and the tunnel barrier material are CVD-grown. The tunnel barrier is realized by h-BN, used either as a monolayer or bilayer and placed over the graphene. Spin transport experiments were performed using ferromagnetic contacts deposited onto the barrier. We find that spin injection is still greatly suppressed in devices with a monolayer tunneling barrier due to resistance mismatch. This is, however, not the case for devices with bilayer barriers. For those devices, a spin relaxation time of 260 ps intrinsic to the CVD graphene material is deduced. This time scale is comparable to those reported for exfoliated graphene, suggesting that this CVD approach is promising for spintronic applications which require scalable materials. △ Less

Submitted 5 July, 2014; originally announced July 2014.

Comments: 13 pages, 3 figures

Non-local spectroscopy of Andreev bound states

Authors: Jens Schindele, Andreas Baumgartner, Romain Maurand, Markus Weiss, Christian Schönenberger

Abstract: We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled b… ▽ More We experimentally investigate Andreev bound states (ABSs) in a carbon nanotube quantum dot (QD) connected to a superconducting Nb lead (S). A weakly coupled normal metal contact acts as a tunnel probe that measures the energy dispersion of the ABSs. Moreover we study the response of the ABS to non-local transport processes, namely Cooper pair splitting and elastic co-tunnelling, that are enabled by a second QD fabricated on the same nanotube on the opposite side of S. We find an appreciable non-local conductance with a rich structure, including a sign reversal at the ground state transition from the ABS singlet to a degenerate magnetic doublet. We describe our device by a simple rate equation model that captures the key features of our observations and demonstrates that the sign of the non-local conductance is a measure for the charge distribution of the ABS, given by the respective Bogoliubov-de Gennes amplitudes $u$ and $v$. △ Less

Submitted 4 November, 2013; originally announced November 2013.

Journal ref: Phys. Rev. B, 89, 045422 (2014)

Ballistic interferences in suspended graphene

Authors: Peter Rickhaus, Romain Maurand, Ming-Hao Liu, Markus Weiss, Klaus Richter, Christian Schönenberger

Abstract: Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed f… ▽ More Graphene is a 2-dimensional (2D) carbon allotrope with the atoms arranged in a honeycomb lattice. The low-energy electronic excitations in this 2D crystal are described by massless Dirac fermions that have a linear dispersion relation similar to photons. Taking advantage of this optics-like electron dynamics, generic optical elements like lenses, beam splitters and wave guides have been proposed for electrons in engineered ballistic graphene. Tuning of these elements relies on the ability to adjust the carrier concentration in defined areas, including the possibility to create bipolar regions of opposite charge (p-n regions). However, the combination of ballistic transport and complex electrostatic gating remains challenging. Here, we report on the fabrication and characterization of fully suspended graphene p-n junctions. By local electro-static gating, resonant cavities can be defined, leading to complex Fabry-Perot interference patterns in the unipolar and the bipolar regime. The amplitude of the observed conductance oscillations accounts for quantum interference of electrons that propagate ballistically over long distances exceeding 1 micron. We also demonstrate that the visibility of the interference pattern is enhanced by Klein collimation at the p-n interface. This finding paves the way to more complex gate-controlled ballistic graphene devices and brings electron optics in graphene closer to reality. △ Less

Submitted 24 April, 2013; originally announced April 2013.

Comments: 15 pages, 5 figures

Journal ref: Nature Communications 4,2342 (2013)

Spin Symmetry of the Bilayer Graphene Groundstate

Authors: Frank Freitag, Markus Weiss, Romain Maurand, Jelena Trbovic, Christian Schönenberger

Abstract: We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a spin-ordered phase. Of the three possible gapped groundstates that are predicted by theory for equal charge distribution between the layers, we can therefore exclud… ▽ More We show nonlinear transport experiments on clean, suspended bilayer graphene that reveal a gap in the density of states. Looking at the evolution of the gap in magnetic fields of different orientation, we find that the groundstate is a spin-ordered phase. Of the three possible gapped groundstates that are predicted by theory for equal charge distribution between the layers, we can therefore exclude the quantum anomalous Hall phase, leaving the layer antiferromagnet and the quantum spin Hall phase as the only possible gapped groundstates for bilayer graphene. △ Less

Submitted 13 April, 2013; v1 submitted 24 December, 2012; originally announced December 2012.

Comments: 10 pages, 4 figures, published version

Journal ref: Physical Review B 87, 161402(R) (2013)

Homogeneity of Bilayer Graphene

Authors: Frank Freitag, Markus Weiss, Romain Maurand, Jelena Trbovic, Christian Schönenberger

Abstract: We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each other. Both of these phases show gap-like features of different magnitude in non-linear transport at low charge carrier densities, as already observed in previ… ▽ More We present non-linear transport measurements on suspended, current annealed bilayer graphene devices. Using a multi-terminal geometry we demonstrate that devices tend to be inhomogeneous and host two different electronic phases next to each other. Both of these phases show gap-like features of different magnitude in non-linear transport at low charge carrier densities, as already observed in previous studies. Here, we investigate the magnetic field dependence and find that both features grow with increasing field, the smaller one with 0.6 meV/T, the larger one with a 5-10 times higher field dependence. We attribute the larger of the two gaps to an interaction induced broken symmetry state and the smaller one to localization in the more disordered parts of the device. △ Less

Submitted 13 November, 2012; v1 submitted 18 July, 2012; originally announced July 2012.

Comments: 9 pages, 4 figures, published version

Journal ref: Solid State Communications 152 (2012), pp. 2053-2057

First order $0/π$ quantum phase transition in the Kondo regime of a superconducting carbon nanotube quantum dot

Authors: Romain Maurand, Tobias Meng, Edgar Bonet, Serge Florens, Laëtitia Marty, Wolfgang Wernsdorfer

Abstract: We study a carbon nanotube quantum dot embedded into a SQUID loop in order to investigate the competition of strong electron correlations with proximity effect. Depending whether local pairing or local magnetism prevails, a superconducting quantum dot will respectively exhibit positive or negative supercurrent, referred to as a 0 or $π$ Josephson junction. In the regime of strong Coulomb blockade,… ▽ More We study a carbon nanotube quantum dot embedded into a SQUID loop in order to investigate the competition of strong electron correlations with proximity effect. Depending whether local pairing or local magnetism prevails, a superconducting quantum dot will respectively exhibit positive or negative supercurrent, referred to as a 0 or $π$ Josephson junction. In the regime of strong Coulomb blockade, the 0 to $π$ transition is typically controlled by a change in the discrete charge state of the dot, from even to odd. In contrast, at larger tunneling amplitude the Kondo effect develops for an odd charge (magnetic) dot in the normal state, and quenches magnetism. In this situation, we find that a first order 0 to $π$ quantum phase transition can be triggered at fixed valence when superconductivity is brought in, due to the competition of the superconducting gap and the Kondo temperature. The SQUID geometry together with the tunability of our device allows the exploration of the associated phase diagram predicted by recent theories. We also report on the observation of anharmonic behavior of the current-phase relation in the transition regime, that we associate with the two different accessible superconducting states. Our results ultimately reveal the spin singlet nature of the Kondo ground state, which is the key process in allowing the stability of the 0-phase far from the mixed valence regime. △ Less

Submitted 10 October, 2011; originally announced October 2011.

Comments: 10 pages, 6 figures in main text, 4 figures in appendix

Journal ref: Physical Review X 2, 021001 (2012)

Mid-infrared laser light nulling experiment using single-mode conductive waveguides

Authors: L. Labadie, E. Le Coarer, R. Maurand, P. Labeye, P. Kern, B. Arezki, J. -E. Broquin

Abstract: Aims: In the context of space interferometry missions devoted to the search of exo-Earths, this paper investigates the capabilities of new single mode conductive waveguides at providing modal filtering in an infrared and monochromatic nulling experiment; Methods: A Michelson laser interferometer with a co-axial beam combination scheme at 10.6 microns is used. After introducing a Pi phase shift u… ▽ More Aims: In the context of space interferometry missions devoted to the search of exo-Earths, this paper investigates the capabilities of new single mode conductive waveguides at providing modal filtering in an infrared and monochromatic nulling experiment; Methods: A Michelson laser interferometer with a co-axial beam combination scheme at 10.6 microns is used. After introducing a Pi phase shift using a translating mirror, dynamic and static measurements of the nulling ratio are performed in the two cases where modal filtering is implemented and suppressed. No additional active control of the wavefront errors is involved. Results: We achieve on average a statistical nulling ratio of 2.5e-4 with a 1-sigma upper limit of 6e-4, while a best null of 5.6e-5 is obtained in static mode. At the moment, the impact of external vibrations limits our ability to maintain the null to 10 to 20 seconds.; Conclusions: A positive effect of SM conductive waveguide on modal filtering has been observed in this study. Further improvement of the null should be possible with proper mechanical isolation of the setup. △ Less

Submitted 1 May, 2007; originally announced May 2007.

Comments: Accepted in A&A, 7 pages, 5 figures