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Reply to comment (arXiv:0907.2026v2) on "Consistent Interpretation of the Low-Temperature Magnetotransport in Graphite Using the Slonczewski-Weiss-McClure 3D Band-Structure Calculations" (arXiv:0902.1925)
Authors:
J. M. Schneider,
M. Orlita,
M. Potemski,
D. K. Maude
Abstract:
Reply to comment (arXiv:0907.2026v2) on "Consistent Interpretation of the Low-Temperature Magnetotransport in Graphite Using the Slonczewski-Weiss-McClure 3D Band-Structure Calculations" (arXiv:0902.1925)
Reply to comment (arXiv:0907.2026v2) on "Consistent Interpretation of the Low-Temperature Magnetotransport in Graphite Using the Slonczewski-Weiss-McClure 3D Band-Structure Calculations" (arXiv:0902.1925)
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Submitted 28 January, 2010;
originally announced January 2010.
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Interplay among spin, orbital effects and localization in a GaAs two-dimensional electron gas in a strong in-plane magnetic field
Authors:
B. A. Piot,
D. K. Maude,
U. Gennser,
A. Cavanna,
D. Mailly
Abstract:
The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron density is reduced, consistent with recent theories taking into account the enhancement of the el…
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The magnetoresistance of a low carrier density, disordered GaAs based two-dimensional (2D) electron gas has been measured in parallel magnetic fields up to 32 T. The feature in the resistance associated with the complete spin polarization of the carriers shifts down by more than 20 T as the electron density is reduced, consistent with recent theories taking into account the enhancement of the electron-electron interactions at low densities. Nevertheless, the magnetic field for complete polarization, Bp, remains 2-3 times smaller than predicted for a disorder free system. We show, in particular by studying the temperature dependance of Bp to probe the effective size of the Fermi sea, that localization plays an important role in determining the spin polarization of a 2D electron gas.
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Submitted 6 November, 2009;
originally announced November 2009.
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Suppression of asymmetric differential resistance in non-Fermi liquid system YbCu_(5-x)Al_(x) (x = 1.3 - 1.75) in high magnetic fields
Authors:
G. Pristas,
M. Reiffers,
E. Bauer,
A. G. M. Jansen,
D. K. Maude
Abstract:
The non-Fermi liquid system (NFL) YbCu_(5-x)Al_(x) (x = 1.3 - 1.75) has been investigated in hetero- as well as homo-contact arrangement in magnetic fields up to 22.5 T. The observed dV/dI(V) characteristics reveal asymmetry in hetero-contact arrangement and do not agree with the model of thermal contact heating, at least close to zero-bias voltage. In the case of a hetero-contact arrangement we…
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The non-Fermi liquid system (NFL) YbCu_(5-x)Al_(x) (x = 1.3 - 1.75) has been investigated in hetero- as well as homo-contact arrangement in magnetic fields up to 22.5 T. The observed dV/dI(V) characteristics reveal asymmetry in hetero-contact arrangement and do not agree with the model of thermal contact heating, at least close to zero-bias voltage. In the case of a hetero-contact arrangement we have observed a maximum at only one voltage polarity at about 1.3 mV (for x = 1.5), which asymmetry is suppressed in an applied magnetic field. This behavior is connected with NFL properties of studied compounds.
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Submitted 21 October, 2009;
originally announced October 2009.
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How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
Authors:
Johannes Jobst,
Daniel Waldmann,
Florian Speck,
Roland Hirner,
Duncan K. Maude,
Thomas Seyller,
Heiko B. Weber
Abstract:
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mo…
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We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular charge carrier density, mobility, conductivity and magnetoconductance of large samples as well as submicrometer-sized Hall bars which are entirely lying on atomically flat substrate terraces. The results display high mobilities, independent of sample size and a Shubnikov-de Haas effect with a Landau level spectrum of single-layer graphene. When gated close to the Dirac point, the mobility increases substantially, and the graphene-like quantum Hall effect occurs. This proves that epitaxial graphene is ruled by the same pseudo-relativistic physics observed previously in exfoliated graphene.
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Submitted 13 August, 2009;
originally announced August 2009.
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Plateau insulator transition in graphene
Authors:
M. Amado,
E. Diez,
D. López-Romero,
F. Rossella,
J. M. Caridad,
F. Dionigi,
V. Bellani,
D. K. Maude
Abstract:
The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted u…
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The quantum Hall effect in a single-layer graphene sample is studied in strong magnetic fields up to 28 T. Our measurements reveal the existence of a metal- insulator transition from filling factor $ν=-2$ to $ν=0$. The value of the universal scaling exponent is found to be $κ=0.57 $ in graphene and therefore in a truly two-dimensional system. This value of $κ$ is in agreement with the accepted universal value for the plateau-insulator transitions in standard quasi two-dimensional electron and hole gases.
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Submitted 30 March, 2010; v1 submitted 9 July, 2009;
originally announced July 2009.
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Kondo physics versus spin gap physics in fully spin-split quantum wires
Authors:
F. Sfigakis,
C. J. B. Ford,
M. Pepper,
D. A. Ritchie,
I. Farrer,
M. Y. Simmons,
D. Maude
Abstract:
Linear and nonlinear transport of quantum wires is investigated at a magnetic field where spin-split one-dimensional (1D) subbands are equidistant in energy. In this seldom-studied regime, experiments are consistent with a density-dependent energy gap between spin subbands, and with a complete spin polarization of the first 1D subband under a large source-drain bias at zero field.
Linear and nonlinear transport of quantum wires is investigated at a magnetic field where spin-split one-dimensional (1D) subbands are equidistant in energy. In this seldom-studied regime, experiments are consistent with a density-dependent energy gap between spin subbands, and with a complete spin polarization of the first 1D subband under a large source-drain bias at zero field.
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Submitted 18 August, 2009; v1 submitted 14 March, 2009;
originally announced March 2009.
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A consistent interpretation of the low temperature magneto-transport in graphite using the Slonczewski--Weiss--McClure 3D band structure calculations
Authors:
J. M. Schneider,
M. Orlita,
M. Potemski,
D. K. Maude
Abstract:
Magnetotransport of natural graphite and highly oriented pyrolytic graphite (HOPG) has been measured at mK temperatures. Quantum oscillations for both electron and hole carriers are observed with orbital angular momentum quantum number up to $N\approx90$. A remarkable agreement is obtained when comparing the data and the predictions of the Slonczewski--Weiss--McClure tight binding model for mass…
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Magnetotransport of natural graphite and highly oriented pyrolytic graphite (HOPG) has been measured at mK temperatures. Quantum oscillations for both electron and hole carriers are observed with orbital angular momentum quantum number up to $N\approx90$. A remarkable agreement is obtained when comparing the data and the predictions of the Slonczewski--Weiss--McClure tight binding model for massive fermions. No evidence for Dirac fermions is observed in the transport data which is dominated by the crossing of the Landau bands at the Fermi level, corresponding to $dE/dk_z=0$, which occurs away from the $H$ point where Dirac fermions are expected.
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Submitted 11 February, 2009;
originally announced February 2009.
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Graphite from the viewpoint of Landau level spectroscopy: An effective graphene bilayer and monolayer
Authors:
M. Orlita,
C. Faugeras,
J. M. Schneider,
G. Martinez,
D. K. Maude,
M. Potemski
Abstract:
We describe an infrared transmission study of a thin layer of bulk graphite in magnetic fields up to B = 34 T. Two series of absorption lines whose energy scales as sqrtB and B are present in the spectra and identified as contributions of massless holes at the H point and massive electrons in the vicinity of the K point, respectively. We find that the optical response of the K point electrons co…
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We describe an infrared transmission study of a thin layer of bulk graphite in magnetic fields up to B = 34 T. Two series of absorption lines whose energy scales as sqrtB and B are present in the spectra and identified as contributions of massless holes at the H point and massive electrons in the vicinity of the K point, respectively. We find that the optical response of the K point electrons corresponds, over a wide range of energy and magnetic field, to a graphene bilayer with an effective inter-layer coupling 2γ_1, twice the value for a real graphene bilayer, which reflects the crystal ordering of bulk graphite along the c-axis. The K point electrons thus behave as massive Dirac fermions with a mass enhanced twice in comparison to a true graphene bilayer.
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Submitted 27 January, 2009;
originally announced January 2009.
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Optical absorption to probe the quantum Hall ferromagnet at filling factor $ν=1$
Authors:
P. Plochocka,
J. M. Schneider,
D. K. Maude,
M. Potemski,
M. Rappaport,
V. Umansky,
I. Bar-Joseph,
J. G. Groshaus,
Y. Gallais,
A. Pinczuk
Abstract:
Optical absorption measurements are used to probe the spin polarization in the integer and fractional quantum Hall effect regimes. The system is fully spin polarized only at filling factor $ν=1$ and at very low temperatures($\sim40$ mK). A small change in filling factor ($δν\approx\pm0.01$) leads to a significant depolarization. This suggests that the itinerant quantum Hall ferromagnet at $ν=1$…
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Optical absorption measurements are used to probe the spin polarization in the integer and fractional quantum Hall effect regimes. The system is fully spin polarized only at filling factor $ν=1$ and at very low temperatures($\sim40$ mK). A small change in filling factor ($δν\approx\pm0.01$) leads to a significant depolarization. This suggests that the itinerant quantum Hall ferromagnet at $ν=1$ is surprisingly fragile against increasing temperature, or against small changes in filling factor.
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Submitted 25 March, 2009; v1 submitted 26 January, 2009;
originally announced January 2009.
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Quantum Hall effect in a high-mobility two-dimensional electron gas on the surface of a cylinder
Authors:
K. -J. Friedland,
A. Siddiki,
R. Hey,
H. Kostial,
A. Riedel,
D. K. Maude
Abstract:
The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We exper…
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The quantum Hall effect is investigated in a high-mobility two-dimensional electron gas on the surface of a cylinder. The novel topology leads to a spatially varying filling factor along the current path. The resulting inhomogeneous current-density distribution gives rise to additional features in the magneto-transport, such as resistance asymmetry and modified longitudinal resistances. We experimentally demonstrate that the asymmetry relations satisfied in the integer filling factor regime are valid also in the transition regime to non-integer filling factors, thereby suggesting a more general form of these asymmetry relations. A model is developed based on the screening theory of the integer quantum Hall effect that allows the self-consistent calculation of the local electron density and thereby the local current density including the current along incompressible stripes. The model, which also includes the so-called `static skin effect' to account for the current density distribution in the compressible regions, is capable of explaining the main experimental observations. Due to the existence of an incompressible-compressible transition in the bulk, the system behaves always metal-like in contrast to the conventional Landauer-Buettiker description, in which the bulk remains completely insulating throughout the quantized Hall plateau regime.
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Submitted 11 January, 2009;
originally announced January 2009.
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Magneto-transmission of multi-layer epitaxial graphene and bulk graphite: A comparison
Authors:
M. Orlita,
C. Faugeras,
G. Martinez,
D. K. Maude,
J. M. Schneider,
M. Sprinkle,
C. Berger,
W. A. de Heer,
M. Potemski
Abstract:
Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dir…
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Magneto-transmission of a thin layer of bulk graphite is compared with spectra taken on multilayer epitaxial graphene prepared by thermal decomposition of a SiC crystal. We focus on the spectral features evolving as \sqrt{B}, which are evidence for the presence of Dirac fermions in both materials. Whereas the results on multi-layer epitaxial graphene can be interpreted within the model of 2D Dirac fermions, the data obtained on bulk graphite can only be explained taking into account the 3D nature of graphite, e.g. by using the standard Slonczewski-Weiss-McClure model.
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Submitted 24 October, 2008;
originally announced October 2008.
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Approaching the Dirac point in high mobility multi-layer epitaxial graphene
Authors:
Milan Orlita,
Clement Faugeras,
Paulina Plochocka,
Petr Neugebauer,
Gerard Martinez,
Duncan K. Maude,
Anne-Laure Barra,
Mike Sprinkle,
Claire Berger,
Walter A. de Heer,
Marek Potemski
Abstract:
Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low temperature in magnetic fields below 50 mT, allowing thus to probe the nearest vicinity of the Dirac point and to estimate the conductivity in nearly undoped graphene…
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Multi-layer epitaxial graphene (MEG) is investigated using far infrared (FIR) transmission experiments in the different limits of low magnetic fields and high temperatures. The cyclotron-resonance like absorption is observed at low temperature in magnetic fields below 50 mT, allowing thus to probe the nearest vicinity of the Dirac point and to estimate the conductivity in nearly undoped graphene. The carrier mobility is found to exceed 250,000 cm$^2$/(V.s). In the limit of high temperatures, the well-defined Landau level (LL) quantization is observed up to room temperature at magnetic fields below 1 T, a phenomenon unique in solid state systems. A negligible increase in the width of the cyclotron resonance lines with increasing temperature indicates that no important scattering mechanism is thermally activated, supporting recent expectations of high room-temperature mobilities in graphene.
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Submitted 13 November, 2008; v1 submitted 27 August, 2008;
originally announced August 2008.
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Magneto-transmission as a probe of Dirac fermions in bulk graphite
Authors:
M. Orlita,
C. Faugeras,
G. Martinez,
D. K. Maude,
M. L. Sadowski,
J. M. Schneider,
M. Potemski
Abstract:
Far infrared magneto-transmission spectroscopy has been used to probe "relativistic" fermions in highly oriented pyrolytic and natural graphite. Nearly identical transmission spectra of those two materials are obtained, giving the signature of Dirac fermions via absorption lines with an energy that scales as \sqrt{B}. The Fermi velocity is evaluated to be c*=1.02x10^6 m/s and the pseudogap at th…
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Far infrared magneto-transmission spectroscopy has been used to probe "relativistic" fermions in highly oriented pyrolytic and natural graphite. Nearly identical transmission spectra of those two materials are obtained, giving the signature of Dirac fermions via absorption lines with an energy that scales as \sqrt{B}. The Fermi velocity is evaluated to be c*=1.02x10^6 m/s and the pseudogap at the H point is estimated to be below 10 meV.
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Submitted 5 May, 2008;
originally announced May 2008.
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In-plane current-voltage characteristics and oscillatory Josephson-vortex flow resistance in La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystals in high magnetic fields
Authors:
S. I. Vedeneev,
D. K. Maude
Abstract:
We have investigated the in-plane $I(V)$ characteristics and the Josephson vortex flow resistance in high-quality La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ (Bi2201) single crystals in parallel and tilted magnetic fields at temperatures down to 40 mK. For parallel magnetic fields below the resistive upper critical field $H^{*}_{c2}$, the $I(V)$ characteristic obey a power-law with a smooth change w…
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We have investigated the in-plane $I(V)$ characteristics and the Josephson vortex flow resistance in high-quality La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ (Bi2201) single crystals in parallel and tilted magnetic fields at temperatures down to 40 mK. For parallel magnetic fields below the resistive upper critical field $H^{*}_{c2}$, the $I(V)$ characteristic obey a power-law with a smooth change with increasing magnetic-field of the exponent from above 5 down to 1. In contrast to the double-layer cuprate Bi2212, the observed smooth change suggests that there is no change in the mechanism of dissipation (no Kosterlitz-Thouless transition) over the range of temperatures investigated. At small angles between the applied field and the $ab$-plane, prominent current steps in the $I(V)$ characteristics and periodic oscillations of Josephson-vortex flow resistance are observed. While the current steps are periodic in the voltage at constant fields, the voltage position of the steps, together with the flux-flow voltage, increases nonlinearly with magnetic field. The $ab$-flow resistance oscillates as a function of field with a constant period over a wide range of magnetic fields and temperatures. The current steps in the $I(V)$ characteristics and the flow resistance oscillations can be linked to the motion of Josephson vortices across layers.
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Submitted 20 February, 2008;
originally announced February 2008.
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Dirac fermions at the H point of graphite: Magneto-transmission studies
Authors:
M. Orlita,
C. Faugeras,
G. Martinez,
D. K. Maude,
M. L. Sadowski,
M. Potemski
Abstract:
We report on far infrared magneto-transmission measurements on a thin graphite sample prepared by exfoliation of highly oriented pyrolytic graphite. In magnetic field, absorption lines exhibiting a blue-shift proportional to sqrtB are observed. This is a fingerprint for massless Dirac holes at the H point in bulk graphite. The Fermi velocity is found to be c*=1.02x10^6 m/s and the pseudogap at t…
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We report on far infrared magneto-transmission measurements on a thin graphite sample prepared by exfoliation of highly oriented pyrolytic graphite. In magnetic field, absorption lines exhibiting a blue-shift proportional to sqrtB are observed. This is a fingerprint for massless Dirac holes at the H point in bulk graphite. The Fermi velocity is found to be c*=1.02x10^6 m/s and the pseudogap at the H point is estimated to be below 10 meV. Although the holes behave to a first approximation as a strictly 2D gas of Dirac fermions, the full 3D band structure has to be taken into account to explain all the observed spectral features.
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Submitted 8 February, 2008; v1 submitted 17 September, 2007;
originally announced September 2007.
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Influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
J. A. Gupta,
K. J. Friedland,
R. Hey,
K. H. Ploog,
U. Gennser,
A. Cavanna,
D. Mailly,
R. Airey,
G. Hill
Abstract:
In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet a…
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In a recent paper [B. A. Piot et al., Phys. Rev. B 72, 245325 (2005)], we have shown that the lifting of the electron spin degeneracy in the integer quantum Hall effect at high filling factors should be interpreted as a magnetic-field-induced Stoner transition. In this work, we extend the analysis to investigate the influence of the single-particle Zeeman energy on the quantum Hall ferromagnet at high filling factors. The single-particle Zeeman energy is tuned through the application of an additional in-plane magnetic field. Both the evolution of the spin polarization of the system and the critical magnetic field for spin splitting are well described as a function of the tilt angle of the sample in the magnetic field.
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Submitted 1 May, 2007;
originally announced May 2007.
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Novel metallic and insulating states at a bent quantum Hall junction
Authors:
M. Grayson,
L. Steinke,
D. Schuh,
M. Bichler,
L. Hoeppel,
J. Smet,
K. v. Klitzing,
D. K. Maude,
G. Abstreiter
Abstract:
A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is str…
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A non-planar geometry for the quantum Hall (QH) effect is studied, whereby two quantum Hall (QH) systems are joined at a sharp right angle. When both facets are at equal filling factor nu the junction hosts a channel with non-quantized conductance, dependent on nu. The state is metallic at nu = 1/3, with conductance along the junction increasing as the temperature T drops. At nu = 1, 2 it is strongly insulating, and at nu = 3, 4 shows only weak T dependence. Upon applying a dc voltage bias along the junction, the differential conductance again shows three different behaviors. Hartree calculations of the dispersion at the junction illustrate possible explanations, and differences from planar QH structures are highlighted.
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Submitted 6 February, 2007; v1 submitted 13 January, 2007;
originally announced January 2007.
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Anomalous Resistance Ridges Along Filling Factor $ν= 4i$
Authors:
K. Takashina,
M. Brun,
T. Ota,
D. K. Maude,
A. Fujiwara,
Y. Ono,
Y. Takahashi,
Y. Hirayama
Abstract:
We report anomalous structure in the magnetoresistance of SiO$_2$/Si(100)/SiO$_2$ quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 $(ν=4i)$ accompanied by suppression on either side of $ν=4i$. This persists when either magnetic field or valley…
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We report anomalous structure in the magnetoresistance of SiO$_2$/Si(100)/SiO$_2$ quantum wells. When Landau levels of opposite valleys are driven through coincidence at the Fermi level, the longitudinal resistance displays elevations at filling factors that are integer multiples of 4 $(ν=4i)$ accompanied by suppression on either side of $ν=4i$. This persists when either magnetic field or valley splitting is swept leading to resistance ridges running along $ν=4i$. The range of field over which they are observed points to the role of spin degeneracy, which is directly confirmed by their disappearance under in-plane magnetic field. The data suggest a new type of many-body effect due to the combined degeneracy of valley and spin.
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Submitted 21 June, 2007; v1 submitted 27 November, 2006;
originally announced November 2006.
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Quantum critical behaviour of the plateau-insulator transition in the quantum Hall regime
Authors:
A. de Visser,
L. A. Ponomarenko,
G. Galistu,
D. T. N. de Lang,
A. M. M. Pruisken,
U. Zeitler,
D. Maude
Abstract:
High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor…
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High-field magnetotransport experiments provide an excellent tool to investigate the plateau-insulator phase transition in the integral quantum Hall effect. Here we review recent low-temperature high-field magnetotransport studies carried out on several InGaAs/InP heterostructures and an InGaAs/GaAs quantum well. We find that the longitudinal resistivity $ρ_{xx}$ near the critical filling factor $ν_{c}$ ~ 0.5 follows the universal scaling law $ρ_{xx}(ν, T) \propto exp[-Δν/(T/T_{0})^κ]$, where $Δν=ν-ν_{c}$. The critical exponent $κ$ equals $0.56 \pm 0.02$, which indicates that the plateau-insulator transition falls in a non-Fermi liquid universality class.
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Submitted 22 August, 2006;
originally announced August 2006.
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Frequency quenching of microwave induced resistance oscillations in a high mobility two-dimensional electron gas
Authors:
S. A. Studenikin,
A. S. Sachrajda,
J. A. Gupta,
Z. R. Wasilewski,
O. M. Fedorych,
M. Byszewski,
D. K. Maude,
M. Potemski,
M. Hilke,
L. N. Pfeiffer,
K. W. West
Abstract:
The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to b…
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The frequency dependence of microwave-induced resistance oscillations (MIROs) has been studied experimentally in high-mobility electron GaAs/AlGaAs structures to explore the limits at which these oscillations can be observed. It is found that in dc transport experiments at frequencies above 120 GHz, MIROs start to quench, while above 230 GHz, they completely disappear. The results will need to be understood theoretically but are qualitatively discussed within a model in which forced electronic charge oscillations (plasmons) play an intermediate role in the interaction process between the radiation and the single-particle electron excitations between Landau levels.
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Submitted 19 November, 2007; v1 submitted 3 February, 2006;
originally announced February 2006.
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High ferromagnetic phase transition temperatures in GaMnAs layers annealed under arsenic cap**
Authors:
J. Sadowski,
J. Z. Domagala,
V. Osinniy,
J. Kanski,
M. Adell,
L. Ilver,
C. Hernandez,
F. Terki,
S. Charar,
D. Maude
Abstract:
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn intersti…
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Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic cap** layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the presence of arsenic cap** at the GaMnAs surface significantly shortens the post-growth annealing times and facilitates a complete out-diffusion of Mn interstitials from GaMnAs volume.
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Submitted 29 January, 2006; v1 submitted 26 January, 2006;
originally announced January 2006.
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Magnetophonon resonance in high density, high mobility quantum well systems
Authors:
C. Faugeras,
D. K. Maude,
G. Martinez,
L. B. Rigal,
C. Proust,
K. -J. Friedland,
R. Hey,
K. H. Ploog
Abstract:
We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the pr…
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We have investigated the magnetophonon resonance (MPR) effect in a series of single GaAs quantum well samples which are symmetrically modulation doped in the adjacent short period AlAs/GaAs superlattices. Two distinct MPR series are observed originating from the $Γ$ and X electrons interacting with the GaAs and AlAs longitudinal optic (LO) phonons respectively. This confirms unequivocally the presence of X electrons in the AlAs quantum well of the superlattice previously invoked to explain the high electron mobility in these structures (Friedland et al. Phys. Rev. Lett. 77,4616 (1996).
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Submitted 19 January, 2006;
originally announced January 2006.
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The quantum Hall ferromagnet at high filling factors: A magnetic field induced Stoner transition
Authors:
B. A. Piot,
D. K. Maude,
M. Henini,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
A. I. Toropov,
R. Airey,
G. Hill
Abstract:
Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to o…
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Spin splitting in the integer quantum Hall effect is investigated for a series of Al$_{x}$Ga$_{1-x}$As/GaAs heterojunctions and quantum wells. Magnetoresistance measurements are performed at mK temperature to characterize the electronic density of states and estimate the strength of many body interactions. A simple model with no free parameters correctly predicts the magnetic field required to observe spin splitting confirming that the appearance of spin splitting is a result of a competition between the disorder induced energy cost of flip** spins and the exchange energy gain associated with the polarized state. In this model, the single particle Zeeman energy plays no role, so that the appearance of this quantum Hall ferromagnet in the highest occupied Landau level can also be thought of as a magnetic field induced Stoner transition.
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Submitted 21 December, 2005;
originally announced December 2005.
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Vortex-like excitations in a non-superconducting single-layer compound Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal in high magnetic fields
Authors:
S. I. Vedeneev,
D. K. Maude
Abstract:
The in-plane $ρ_{ab}(H,T)$ and the out-of-plane $ρ_c(H,T)$ magneto-transport in magnetic fields up to 28 T has been investigated in high quality non-superconducting (down to 20 mK) La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal. By measuring the angular dependence of the in-plane and out-of-plane magnetoresistivities at temperatures from 1 K down to 30 mK, we present evidence for the pre…
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The in-plane $ρ_{ab}(H,T)$ and the out-of-plane $ρ_c(H,T)$ magneto-transport in magnetic fields up to 28 T has been investigated in high quality non-superconducting (down to 20 mK) La-free Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ single crystal. By measuring the angular dependence of the in-plane and out-of-plane magnetoresistivities at temperatures from 1 K down to 30 mK, we present evidence for the presence of vortex-like excitations in a non-superconducting cuprate in the insulating state. Such excitations have previously been observed by the detection of a Nernst signal in superconducting cuprates at $T>T_c$ in magnetic fields.
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Submitted 20 December, 2005;
originally announced December 2005.
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Quasiparticle density of states in Bi$_2$Sr$_2$CaCu$_2$O$_{8+δ}$ single crystals probed using tunneling spectroscopy at ultra-low temperatures in high magnetic fields
Authors:
S. I. Vedeneev,
D. K. Maude
Abstract:
Break-junction tunneling spectroscopy at temperatures 30-50 mK in high magnetic field is used to directly probe the quasiparticle density of states within the energy gap in a single crystal Bi2212 high-$T_c$ superconductor. The measured tunneling conductances $dI/dV(V)$ in the subgap region have a zero flat region with no evidence for a linear increase of the density of states with voltage. A nu…
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Break-junction tunneling spectroscopy at temperatures 30-50 mK in high magnetic field is used to directly probe the quasiparticle density of states within the energy gap in a single crystal Bi2212 high-$T_c$ superconductor. The measured tunneling conductances $dI/dV(V)$ in the subgap region have a zero flat region with no evidence for a linear increase of the density of states with voltage. A number of tunnel break-junctions exhibited $dI/dV(V)$ curves with a second energy gap structure at the average magnitude 2$Δ_{p-p}/e=13$ mV. Our data cannot be explained by either a pure $s$ pairing or a pure $d_{x^2-y^2}$ pairing.
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Submitted 26 October, 2005;
originally announced October 2005.
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The microwave induced resistance response of a high mobility 2DEG from the quasi-classical limit to the quantum Hall regime
Authors:
S. A. Studenikin,
M. Byszewski,
D. K. Maude,
M. Potemski,
A. Sachrajda,
Z. R. Wasilewski,
M. Hilke,
L. N. Pfeiffer,
K. W. West
Abstract:
Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic…
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Microwave induced resistance oscillations (MIROs) were studied experimentally over a very wide range of frequencies ranging from ~20 GHz up to ~4 THz, and from the quasi-classical regime to the quantum Hall effect regime. At low frequencies regular MIROs were observed, with a periodicity determined by the ratio of the microwave to cyclotron frequencies. For frequencies below 150 GHz the magnetic field dependence of MIROs waveform is well described by a simplified version of an existing theoretical model, where the dam** is controlled by the width of the Landau levels. In the THz frequency range MIROs vanish and only pronounced resistance changes are observed at the cyclotron resonance. The evolution of MIROs with frequency are presented and discussed.
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Submitted 12 August, 2005;
originally announced August 2005.
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Heat transport in Bi_{2+x}Sr_{2-x}CuO_{6+δ}: departure from the Wiedemann-Franz law in the vicinity of the metal-insulator transition
Authors:
Cyril Proust,
Kamran Behnia,
Romain Bel,
Duncan Maude,
S. I. Vedeneev
Abstract:
We present a study of heat transport in the cuprate superconductor Bi_{2+x}Sr_{2-x}CuO_{6+δ} at subkelvin temperatures and in magnetic fields as high as 25T. In several samples with different do** levels close to optimal, the linear-temperature term of thermal conductivity was measured both at zero-field and in presence of a magnetic field strong enough to quench superconductivity. The zero-fi…
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We present a study of heat transport in the cuprate superconductor Bi_{2+x}Sr_{2-x}CuO_{6+δ} at subkelvin temperatures and in magnetic fields as high as 25T. In several samples with different do** levels close to optimal, the linear-temperature term of thermal conductivity was measured both at zero-field and in presence of a magnetic field strong enough to quench superconductivity. The zero-field data yields a superconducting gap of reasonable magnitude displaying a do** dependence similar to the one reported in other families of cuprate. The normal-state data together with the results of the resistivity measurements allows us to test the Wiedemann-Franz(WF) law, the validity of which was confirmed in an overdoped sample in agreement with previous studies. In contrast, a systematic deviation from the WF law was resolved for samples displaying either a lower do** content or a higher disorder. Thus, in the vicinity of the metal-insulator cross-over, heat conduction in the zero-temperature limit appears to become significantly larger than predicted by the WF law. Possible origins of this observation are discussed.
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Submitted 23 May, 2005;
originally announced May 2005.
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Scaling flow diagram in the fractional quantum Hall regime of GaAs/AlGaAs heterostructures
Authors:
S. S. Murzin,
S. I. Dorozhkin,
D. K. Maude,
A. G. M. Jansen
Abstract:
The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D e…
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The temperature driven flow lines of the Hall and dissipative magnetoconductance data (σ_{xy},σ_{xx}) are studied in the fractional quantum Hall regime for a 2D electron system in GaAs/Al_{x}Ga_{1-x}As heterostructures. The flow lines are rather well described by a recent unified scaling theory developed for both the integer and the fractional quantum Hall effect in a totally spin-polarized 2D electron system which predicts that one (σ_{xy},σ_{xx}) point determines a complete flow line.
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Submitted 10 January, 2006; v1 submitted 11 April, 2005;
originally announced April 2005.
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Excited two-dimensional magnetopolaron states in quantum well of resonant tunnel junction
Authors:
D. Yu. Ivanov,
M. V. Chukalina,
E. G. Takhtamirov,
Yu. V. Dubrovskii,
L. Eaves,
V. A. Volkov,
E. E. Vdovin,
J. -C. Portal,
D. K. Maude,
M. Henini,
G. Hill
Abstract:
Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition…
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Tunnel spectroscopy is used to probe the electronic structure in GaAs quantum well of resonant tunnel junction over wide range of energies and magnetic fields normal to layers. Spin degenerated high Landau levels ($N=2\div7$) are found to be drastically renormalised near energies when the longitudinal optical-phonon ($\hbarω_{LO}$) and cyclotron energy ($\hbarω_{C}$) are satisfied condition $\hbarω_{LO}=m\hbarω_{C}$, where $m=1,2,3$. This renormalisation is attributed to formation of resonant magnetopolarons, i.e. mixing of high index Landau levels by strong interaction of electrons at Landau level states with LO-phonons.
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Submitted 13 January, 2005;
originally announced January 2005.
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Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers
Authors:
U. Gennser,
M. Scheinert,
L. Diehl,
S. Tsu**o,
A. Borak,
C. V. Falub,
D. Grützmacher,
A. Weber,
D. K. Maude,
Y. Campidelli,
O. Kermarrec,
D. Bensahel
Abstract:
We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnel…
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We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.
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Submitted 17 June, 2005; v1 submitted 10 January, 2005;
originally announced January 2005.
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Metal-to-insulator crossover and pseudogap in single-layer compound Bi$_{2+x}$Sr$_{2-x}$Cu$_{1+y}$O$_{6+δ}$ single crystals in high magnetic fields
Authors:
S. I. Vedeneev,
D. K. Maude
Abstract:
The in-plane $ρ_{ab}(H)$ and the out-of-plane $ρ_c(H)$ magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide do** range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover…
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The in-plane $ρ_{ab}(H)$ and the out-of-plane $ρ_c(H)$ magneto-transport in magnetic fields up to 28 T has been investigated in a series of high quality, single crystal, hole-doped La-free Bi2201 cuprates for a wide do** range and over a wide range of temperatures down to 40 mK. With decreasing hole concentration going from the overdoped (p=0.2) to the underdoped (p=0.12) regimes, a crossover from a metallic to and insulating behavior of $ρ_{ab}(T)$ is observed in the low temperature normal state, resulting in a disorder induced metal insulator transition. In the zero temperature limit, the normal state ratio $ρ_c(H)/ρ_{ab}(H)$ of the heavily underdoped samples in pure Bi2201 shows an anisotropic 3D behavior, in striking contrast with that observed in La-doped Bi2201 and LSCO systems. Our data strongly support that that the negative out-of-plane magnetoresistance is largely governed by interlayer conduction of quasiparticles in the superconducting state, accompanied by a small contribution of normal state transport associated with the field dependent pseudogap. Both in the optimal and overdoped regimes, the semiconducting behavior of $ρ_c(H)$ persists even for magnetic fields above the pseudogap closing field $H_{pg}$. The method suggested by Shibauchi \textit{et al.} (Phys. Rev. Lett. \textbf{86}, 5763, (2001)) for evaluating $H_{pg}$ is unsuccessful for both under- and overdoped Bi2201 samples. Our findings suggest that the normal state pseudogap is not always a precursor of superconductivity.
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Submitted 2 December, 2004;
originally announced December 2004.
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Spin-orbit coupling and anisotropy of spin splitting in quantum dots
Authors:
J. Konemann,
R. J. Haug,
D. K. Maude,
V. I. Fal'ko,
B. L. Altshuler
Abstract:
In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic field is perpendicular to the planar structure, the field B_so generates an additional splitting for electron states as compared to the spin splitting in the in-…
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In lateral quantum dots, the combined effect of both Dresselhaus and Bychkov-Rashba spin orbit coupling is equivalent to an effective magnetic field B_so which has the opposite sign for s_z=1/2 spin electrons. When the external magnetic field is perpendicular to the planar structure, the field B_so generates an additional splitting for electron states as compared to the spin splitting in the in-plane field orientation. The anisotropy of spin splitting has been measured and then analyzed in terms of spin-orbit coupling in several AlGaAs/GaAs quantum dots by means of resonanat tunneling spectroscopy. From the measured values and sign of the anisotropy we are able to determine the dominating spin-orbit coupling mechanism.
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Submitted 2 September, 2004;
originally announced September 2004.
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Magneto-transport in high g-factor, low-density two-dimensional electron systems confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells
Authors:
W. Desrat,
F. Giazotto,
V. Pellegrini,
F. Beltram,
F. Capotondi,
G. Biasiol,
L. Sorba,
D. K. Maude
Abstract:
We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce Landau level c…
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We report magneto-transport measurements on high-mobility two-dimensional electron systems (2DESs) confined in In_0.75Ga_0.25As/In_0.75Al_0.25As single quantum wells. Several quantum Hall states are observed in a wide range of temperatures and electron densities, the latter controlled by a gate voltage down to values of 1.10^11 cm^-2. A tilted-field configuration is used to induce Landau level crossings and magnetic transitions between quantum Hall states with different spin polarizations. A large filling factor dependent effective electronic g-factor is determined by the coincidence method and cyclotron resonance measurements. From these measurements the change in exchange-correlation energy at the magnetic transition is deduced. These results demonstrate the impact of many-body effects in tilted-field magneto-transport of high-mobility 2DESs confined in In_0.75Ga_0.25As/In_0.75Al_0.25As quantum wells. The large tunability of electron density and effective g-factor, in addition, make this material system a promising candidate for the observation of a large variety of spin-related phenomena.
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Submitted 19 January, 2004;
originally announced January 2004.
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New Insights into the Plateau-Insulator Transition in the Quantum Hall Regime
Authors:
L. A. Ponomarenko,
D. T. N. de Lang,
A. de Visser,
D. Maude,
B. N. Zvonkov,
R. A. Lunin,
A. M. M. Pruisken
Abstract:
We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP h…
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We have measured the quantum critical behavior of the plateau-insulator (PI) transition in a low-mobility InGaAs/GaAs quantum well. The longitudinal resistivity measured for two different values of the electron density follows an exponential law, from which we extract critical exponents kappa = 0.54 and 0.58, in good agreement with the value (kappa = 0.57) previously obtained for an InGaAs/InP heterostructure. This provides evidence for a non-Fermi liquid critical exponent. By reversing the direction of the magnetic field we find that the averaged Hall resistance remains quantized at the plateau value h/e^2 through the PI transition. From the deviations of the Hall resistance from the quantized value, we obtain the corrections to scaling.
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Submitted 19 August, 2003;
originally announced August 2003.
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Longitudinal conductivity in Si/SiGe heterostructure at integer filling factors
Authors:
I. Shlimak,
V. Ginodman,
M. Levin,
M. Potemski,
D. K. Maude,
K. -J. Friedland,
D. J. Paul
Abstract:
We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction:…
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We have investigated temperature dependence of the longitudinal conductivity $σ_{xx}$ at integer filling factors $ν=i$ for Si/SiGe heterostructure in the quantum Hall effect regime. It is shown that for odd $i$, when the Fermi level $E_{F}$ is situated between the valley-split levels, $Δσ_{xx}$ is determined by quantum corrections to conductivity caused by the electron-electron interaction: $Δσ_{xx}(T)\sim \ln T$. For even $i$, when $E_{F}$ is located between cyclotron-split levels or spin-split levels, $σ_{xx}\sim \exp[-Δ_{i}/T]$ for $i=6,10,12$ and $\sim \exp [-(T_{0i}/T)]^{1/2}$ for $i=4,8$. For further decrease of $T$, all dependences $σ_{xx}(T)$ tend to almost temperature-independent residual conductivity $σ_{i}(0)$. A possible mechanism for $σ_{i}(0)$ is discussed.
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Submitted 29 July, 2003;
originally announced July 2003.
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Collective character of spin excitations in a system of Mn$^{2+}$ spins coupled to a two-dimensional electron gas
Authors:
F. J. Teran,
M. Potemski,
D. K. Maude,
D. Plantier,
A. K. Hassan,
A. Sachrajda,
Z. Wilamowski,
J. Jaroszynski,
T. Wojtowicz,
G. Karczewski
Abstract:
We have studied the low energy spin excitations in n-type CdMnTe based dilute magnetic semiconductor quantum wells. For magnetic fields for which the energies for the excitation of free carriers and Mn spins are almost identical an anomalously large Knight shift is observed. Our findings suggests the existence of a magnetic field induced ferromagnetic order in these structures, which is in agree…
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We have studied the low energy spin excitations in n-type CdMnTe based dilute magnetic semiconductor quantum wells. For magnetic fields for which the energies for the excitation of free carriers and Mn spins are almost identical an anomalously large Knight shift is observed. Our findings suggests the existence of a magnetic field induced ferromagnetic order in these structures, which is in agreement with recent theoretical predictions [J. K{ö}nig and A. H. MacDonald, submitted Phys. Rev. Lett. (2002)]
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Submitted 25 June, 2003;
originally announced June 2003.
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Magnetic properties of GaMnAs single layers and GaInMnAs superlattices investigated at low temperature and high magnetic field
Authors:
C. Hernandez,
F. Terki,
S. Charar,
J. Sadowski,
D. Maude,
V. Stanciu,
P. Svedlindh
Abstract:
Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the C…
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Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (Tc ~ 40 K), a new phase transition is observed close to 13 K.
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Submitted 20 June, 2003;
originally announced June 2003.
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Test of the Wiedemann-Franz law in an optimally-doped cuprate
Authors:
Romain Bel,
Kamran Behnia,
Cyril Proust,
Peter van der Linden,
Duncan Maude,
Sergey I. Vedeneev
Abstract:
We present a study of heat and charge transport in Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ focused on the size of the low-temperature linear term of the thermal conductivity at optimal do** level. In the superconducting state, the magnitude of this term implies a d-wave gap with an amplitude close to what has been reported. In the normal state, recovered by the application of a magnetic field, measure…
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We present a study of heat and charge transport in Bi$_{2+x}$Sr$_{2-x}$CuO$_{6+δ}$ focused on the size of the low-temperature linear term of the thermal conductivity at optimal do** level. In the superconducting state, the magnitude of this term implies a d-wave gap with an amplitude close to what has been reported. In the normal state, recovered by the application of a magnetic field, measurement of this term and residual resistivity yields a Lorenz number $L = κ_{N}ρ_{0}/T = 1.3 \pm 0.2 L_{0}$. The departure from the value expected by the Wiedemann-Franz law is thus slightly larger than our estimated experimental resolution.
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Submitted 4 May, 2004; v1 submitted 4 April, 2003;
originally announced April 2003.
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Ferromagnetic GaMnAs/GaAs superlattices - MBE growth and magnetic properties
Authors:
J. Sadowski,
R. Mathieu,
P. Svedlindh,
M. Karlsteen,
J. Kanski,
Y. Fu,
J. T. Domaga_a,
W. Szuszkiewicz,
B. Hennion,
D. K. Maude,
R. Airey,
G. Hill
Abstract:
We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have f…
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We have studied the magnetic properties of (GaMnAs)m/(GaAs)n superlattices with magnetic GaMnAs layers of thickness between 8 and 16 molecular layers (ML) (23-45 Å), and with nonmagnetic GaAs spacers from 4 ML to 10 ML (11-28 Å). While previous reports state that GaMnAs layers thinner than 50 Åare paramagnetic in the whole Mn composition range achievable using MBE growth (up to 8% Mn), we have found that short period superlattices exhibit a paramagnetic-to-ferromagnetic phase transition with a transition temperature which depends on both the thickness of the magnetic GaMnAs layer and the nonmagnetic GaAs spacer. The neutron scattering experiments have shown that the magnetic layers in superlattices are ferromagnetically coupled for both thin (below 50 Å) and thick (above 50 Å) GaMnAs layers.
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Submitted 14 December, 2001;
originally announced December 2001.
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Magneto infra-red absorption in high electronic density GaAs quantum wells
Authors:
A. J. L. Poulter,
J. Zeman,
D. K. Maude,
M. Potemski,
G. Martinez,
A. Riedel,
R. Hey,
K. J. Friedland
Abstract:
Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into…
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Magneto infra-red absorption measurements have been performed in a highly doped GaAs quantum well which has been lifted off and bonded to a silicon substrate, in order to study the resonant polaron interaction. It is found that the pinning of the cyclotron energy occurs at an energy close to that of the transverse optical phonon of GaAs. This unexpected result is explained by a model taking into account the full dielectric constant of the quantum well.
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Submitted 1 December, 2000;
originally announced December 2000.
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Metal-Insulator oscillations in a Two-dimensional Electron-Hole system
Authors:
R. J. Nicholas,
K. Takashina,
M. Lakrimi,
B. Kardynal,
S. Khym,
N. J. Mason,
D. M. Symons,
D. K. Maude,
J. C. Portal
Abstract:
The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state…
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The electrical transport properties of a bipolar InAs/GaSb system have been studied in magnetic field. The resistivity oscillates between insulating and metallic behaviour while the quantum Hall effect shows a digital character oscillating from 0 to 1 conducatance quantum e^2/h. The insulating behaviour is attributed to the formation of a total energy gap in the system. A novel looped edge state picture is proposed associated with the appearance of a voltage between Hall probes which is symmetric on magnetic field reversal.
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Submitted 11 April, 2000; v1 submitted 7 December, 1999;
originally announced December 1999.
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Searches for Skyrmions in the Limit of Zero g-Factor
Authors:
D. R. Leadley,
R. J. Nicholas,
D. K. Maude,
A. N. Utjuzh,
J. C. Portal,
J. J. Harris,
C. T. Foxon
Abstract:
Energy gaps have been measured for the ferromagnetic quantum Hall effect states at v=1 and 3 in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is reduced to zero by applying hydrostatic pressures of up to 20kbar. At large Zeeman energy the gaps are consistent with spin wave excitations. For a low density sample the gap at v=1 decreases with increasing pressure and reaches a mi…
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Energy gaps have been measured for the ferromagnetic quantum Hall effect states at v=1 and 3 in GaAs/GaAlAs heterojunctions as a function of Zeeman energy, which is reduced to zero by applying hydrostatic pressures of up to 20kbar. At large Zeeman energy the gaps are consistent with spin wave excitations. For a low density sample the gap at v=1 decreases with increasing pressure and reaches a minimum when the g-factor vanishes. At small Zeeman energy the excitation appears to consist of a large number of reversed spins and may be interpreted as a Skyrmion. The data also suggest Skyrmionic excitations take place at v=3. The width of the minimum at v=1 is found to decrease as the g-factor is reduced in a similar way for all samples.
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Submitted 27 May, 1998;
originally announced May 1998.
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2D Lattice of coupled Sinai billiards: metal or insulator at g<<1
Authors:
M. V. Budantsev,
Z. D. Kvon,
A. G. Pogosov,
G. M. Gusev,
J. C. Portal,
D. K. Maude,
N. T. Moshegov,
A. I. Toropov
Abstract:
We investigate the transport in a two-dimensional (2D) lattice of coupled Sinai billiards fabricated on the basis of a high-mobility 2D electron gas in GaAs/AlGaAs heterojunction. For the states with low reduced conductivity g<<1 an anomalously weak temperature dependence of g was found. The large negative magnetoresistance described by the Lorentz line-shape of the width corresponding to the ha…
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We investigate the transport in a two-dimensional (2D) lattice of coupled Sinai billiards fabricated on the basis of a high-mobility 2D electron gas in GaAs/AlGaAs heterojunction. For the states with low reduced conductivity g<<1 an anomalously weak temperature dependence of g was found. The large negative magnetoresistance described by the Lorentz line-shape of the width corresponding to the half magnetic flux quantum through the area of the billiard is observed. In going from g>1 to g<<1 it strongly increases. The Shubnikov-de Haas oscillations and commensurability magnetoresistance peak are preserved at g<<1. The data suggest that the system studied behaves more like a metal than an insulator at g<<1 and is not described by the generally accepted picture of Anderson localization.
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Submitted 18 February, 1998;
originally announced February 1998.
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Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices
Authors:
G. Brunthaler,
T. Dietl,
A. Prinz,
M. Sawicki,
J. Jaroszynski,
P. Glod,
F. Schaffler,
G. Bauer,
D. K. Maude,
J. C. Portal
Abstract:
A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particl…
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A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.
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Submitted 17 December, 1997;
originally announced December 1997.
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Phasecoherent Transport in PbTe Wide Parabolic Quantum Wells
Authors:
J. Oswald,
G. Span,
A. Homer,
G. Heigl,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
Conductance fluctuations have been observed in macroscopic, quasi 3D PbTe wide quantum wells. A significant increase of the correlation field occurs in a temperature range from 40 mK to 1.2K. At the same time the fluctuation amplitude stays near e^2/h although the lateral sample size is two orders of magnitude larger than any typical length scale of diffusive electron transport. We interpret thi…
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Conductance fluctuations have been observed in macroscopic, quasi 3D PbTe wide quantum wells. A significant increase of the correlation field occurs in a temperature range from 40 mK to 1.2K. At the same time the fluctuation amplitude stays near e^2/h although the lateral sample size is two orders of magnitude larger than any typical length scale of diffusive electron transport. We interpret this behavior in terms of phasecoherent electrontransport, which takes advantage of a dramatic enhancement of the phasecoherence length of electrons in edgechannels and edge channel loops in the bulk region.
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Submitted 18 July, 1997;
originally announced July 1997.
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Edge Channel Dominated Magnetotransport in PbTe Wide Parabolic Quantum Wells
Authors:
J. Oswald,
G. Span,
A. Homer,
G. Heigl,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
In PbTe wide parabolic quantum wells (WPQW) a plateau-like structure is observed in the Hall resistance, which corresponds to the Shubnikov-de Haas oscillations in the same manner as known from the quantum Hall effect. At the same time a non-local signal is observed which corresponds to the structure in Rxx and Rxy. We find a striking correspondence between a standard quantum Hall system and thi…
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In PbTe wide parabolic quantum wells (WPQW) a plateau-like structure is observed in the Hall resistance, which corresponds to the Shubnikov-de Haas oscillations in the same manner as known from the quantum Hall effect. At the same time a non-local signal is observed which corresponds to the structure in Rxx and Rxy. We find a striking correspondence between a standard quantum Hall system and this quasi 3D WPQW system.
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Submitted 18 July, 1997;
originally announced July 1997.
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Anomalous magnetotransport in wide quantum wells
Authors:
J. Oswald,
G. Span,
A. Homer,
G. Heigl,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum Hall effect. The onsets of plateaux in Rxy do not correspond to 2D filling factors but coincide with the occupation of 3D (bulk-) Landau levels. At the same t…
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We present magneto transport experiments of quasi 3D PbTe wide quantum wells. A plateau-like structure in the Hall resistance is observed, which corresponds to the Shubnikov de Haas oscillations in the same manner as known from the quantum Hall effect. The onsets of plateaux in Rxy do not correspond to 2D filling factors but coincide with the occupation of 3D (bulk-) Landau levels. At the same time a non-local signal is observed which corresponds to the structure in Rxx and Rxy and fulfils exactly the Onsager-Casimir relation (Rij,kl(B) = Rkl,ij(-B)). We explain the behaviour in terms of edge channel transport which is controlled by a permanent backscattering across a system of "percolative EC - loops" in the bulk region. Long range potential fluctuations with an amplitude of the order of the subband splitting are explained to play an essential role in this electron system.
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Submitted 16 July, 1997;
originally announced July 1997.
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Non Local Transport in PbTe Wide Parabolic Quantum Wells
Authors:
J. Oswald,
G. Heigl,
G. Span,
A. Homer,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
The results of non-local experiments in different contact configurations are discussed in terms of a non-local behaviour of the contact arms. It is shown that the observed reproducible fluctuations can be understood to result from fluctuations of a non-local bulk current in the contact arms. The fluctuations are explained by edge channel backscattering because of potential fluctuations in the bu…
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The results of non-local experiments in different contact configurations are discussed in terms of a non-local behaviour of the contact arms. It is shown that the observed reproducible fluctuations can be understood to result from fluctuations of a non-local bulk current in the contact arms. The fluctuations are explained by edge channel backscattering because of potential fluctuations in the bulk region.
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Submitted 16 July, 1997;
originally announced July 1997.
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Quenching of the Quantum Hall Effect in PbTe Wide Parabolic Quantum Wells
Authors:
J. Oswald,
G. Heigl,
G. Span,
A. Homer,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
We show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is replaced by conductance fluctuations due to EC backscattering in the contact arms, which leads to a fluctuating current redistribution between a dissipative bulk ele…
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We show that for the case of a many valley host semiconductor an edge channel (EC) related non-local behaviour can persist also in the 3D-regime where the quantum Hall effect (QHE) is already quenched. We demonstrate that the QHE is replaced by conductance fluctuations due to EC backscattering in the contact arms, which leads to a fluctuating current redistribution between a dissipative bulk electron system and a less-dissipative EC-system. Both electron systems are located in different valleys of the band structure. The linear increase of Rxx with the magnetic field is explained by EC-backscattering in the Hall bar
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Submitted 16 July, 1997;
originally announced July 1997.
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Conductance Fluctuations in PbTe Wide Parabolic Quantum Wells
Authors:
J. Oswald,
G. Heigl,
G. Span,
A. Homer,
P. Ganitzer,
D. K. Maude,
J. C. Portal
Abstract:
We report on conductance fluctuations which are observed in local and non-local magnetotransport experiments. Although the Hall bar samples are of macroscopic size, the amplitude of the fluctuations from the local measurements is close to e^2/h. It is shown that the fluctuations have to be attributed to edge channel effects.
We report on conductance fluctuations which are observed in local and non-local magnetotransport experiments. Although the Hall bar samples are of macroscopic size, the amplitude of the fluctuations from the local measurements is close to e^2/h. It is shown that the fluctuations have to be attributed to edge channel effects.
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Submitted 16 July, 1997;
originally announced July 1997.
