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Unveiling the double-peak structure of quantum oscillations in the specific heat
Authors:
Zhuo Yang,
Benoit Fauque,
Toshihiro Nomura,
Takashi Shitaokoshi,
Sunghoon Kim,
Debanjan Chowdhury,
Zuzana Pribulova,
Jozef Kacmarcik,
Alexandre Pourret,
Georg Knebel,
Dai Aoki,
Thierry Klein,
Duncan K. Maude,
Christophe Marcenat,
Yoshimitsu Kohama
Abstract:
Quantum oscillation phenomenon is an essential tool to understand the electronic structure of quantum matter. Here we report a systematic study of quantum oscillations in the electronic specific heat $C_{el}$ in natural graphite. We show that the crossing of a single spin Landau level and the Fermi energy give rise to a double-peak structure, in striking contrast to the single peak expected from L…
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Quantum oscillation phenomenon is an essential tool to understand the electronic structure of quantum matter. Here we report a systematic study of quantum oscillations in the electronic specific heat $C_{el}$ in natural graphite. We show that the crossing of a single spin Landau level and the Fermi energy give rise to a double-peak structure, in striking contrast to the single peak expected from Lifshitz-Kosevich theory. Intriguingly, the double-peak structure is predicted by the kernel term for $C_{el}/T$ in the free electron theory. The $C_{el}/T$ represents a spectroscopic tuning fork of width 4.8 $k_B T$ which can be tuned at will to resonance. Using a coincidence method, the double-peak structure can be used to accurately determine the Lande $g$-factor of quantum materials. More generally, the tuning fork can be used to reveal any peak in fermionic density of states tuned by magnetic field, such as Lifshitz transition in heavy-fermion compounds.
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Submitted 18 October, 2023; v1 submitted 6 September, 2023;
originally announced September 2023.
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The impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus
Authors:
Magdalena Birowska,
Joanna Urban,
Michał Baranowski,
Duncan K Maude,
Paulina Plochocka,
Nevill Gonzalez Szwacki
Abstract:
The encapsulation of two-dimensional layered materials such as black phosphorus is of paramount importance for their stability in air. However, the encapsulation poses several questions, namely, how it affects, via the weak van der Waals forces, the properties of the black phosphorus and whether these properties can be tuned on demand. Prompted by these questions, we have investigated the impact o…
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The encapsulation of two-dimensional layered materials such as black phosphorus is of paramount importance for their stability in air. However, the encapsulation poses several questions, namely, how it affects, via the weak van der Waals forces, the properties of the black phosphorus and whether these properties can be tuned on demand. Prompted by these questions, we have investigated the impact of hexagonal boron nitride encapsulation on the structural and vibrational properties of few layer black phosphorus, using a first-principles method in the framework of density functional theory. We demonstrate that the encapsulation with hexagonal boron nitride imposes biaxial strain on the black phosphorus material, flattening its puckered structure, by decreasing the thickness of the layers via the increase of the puckered angle and the intra-layer P-P bonds. This work exemplifies the evolution of structural parameters in layered materials after the encapsulation process. We find that after encapsulation, phosphorene (single layer black phosphorous) contracts by 1.1% in the armchair direction and stretches by 1.3% in the zigzag direction, whereas few layer black phosphorus mainly expands by up to 3% in the armchair direction. However, these relatively small strains induced by the hexagonal BN, lead to significant changes in the vibrational properties of black phosphorus, with the redshifts of up to 10 cm$^{-1}$ of the high frequency optical mode $A_g^1$. In general, structural changes induced by the encapsulation process open the door to substrate controlled strain engineering in two-dimensional crystals.
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Submitted 24 February, 2020;
originally announced February 2020.
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Phase Transition Induced Carrier Mass Enhancement in 2D Ruddlesden-Popper Perovskites
Authors:
Michal Baranowski,
Szymon J. Zelewski,
Mikael Kepenekian,
Boubacar Traoré,
Joanna M. Urban,
Alessandro Surrente,
Krzysztof Galkowski,
Duncan K. Maude,
Agnieszka Kuc,
Edward P. Booker,
Robert Kudrawiec,
Samuel D. Stranks,
Paulina Plochocka
Abstract:
There is a variety of possible ways to tune the optical properties of 2D perovskites, though the mutual dependence between different tuning parameters hinders our fundamental understanding of their properties. In this work we attempt to address this issue for (C$_n$H$_{2n+1}$NH$_3$)$_2$PbI$_4$ (with n=4,6,8,10,12) using optical spectroscopy in high magnetic fields up to 67T. Our experimental resul…
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There is a variety of possible ways to tune the optical properties of 2D perovskites, though the mutual dependence between different tuning parameters hinders our fundamental understanding of their properties. In this work we attempt to address this issue for (C$_n$H$_{2n+1}$NH$_3$)$_2$PbI$_4$ (with n=4,6,8,10,12) using optical spectroscopy in high magnetic fields up to 67T. Our experimental results, supported by DFT calculations, clearly demonstrate that the exciton reduced mass increases by around 30% in the low temperature phase. This is reflected by a 2-3 fold decrease of the diamagnetic coefficient. Our studies show that the effective mass, which is an essential parameter for optoelectronic device operation, can be tuned by the variation of organic spacers and/or moderate cooling achievable using Peltier coolers. Moreover, we show that the complex absorption features visible in absorption/transmission spectra track each other in magnetic field providing strong evidence for the phonon related nature of the observed side bands.
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Submitted 13 September, 2019;
originally announced September 2019.
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Giant Fine Structure Splitting of the Bright Exciton in a Bulk MAPbBr$_3$ Single Crystal
Authors:
Michal Baranowski,
Krzysztof Galkowski,
Alessandro Surrente,
Joanna M. Urban,
Łukasz Klopotowski,
Sebastian Mackowski,
Duncan K. Maude,
Rim Ben Aich,
Kais Boujdaria,
Maria Chamarro,
Christophe Testelin,
Pabitra Nayak,
Markus Dollmann,
Henry J. Snaith,
Robin J. Nicholas,
Paulina Plochocka
Abstract:
Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be…
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Exciton fine structure splitting in semiconductors reflects the underlying symmetry of the crystal and quantum confinement. Since the latter factor strongly enhances the exchange interaction, most work has focused on nanostructures. Here, we report on the first observation of the bright exciton fine structure splitting in a bulk semiconductor crystal, where the impact of quantum confinement can be specifically excluded, giving access to the intrinsic properties of the material. Detailed investigation of the exciton photoluminescence and reflection spectra of a bulk methylammonium lead tribromide single crystal reveals a zero magnetic field splitting as large as $\sim 200μ$eV. This result provides an important starting point for the discussion of the origin of the large bright exciton fine structure observed in perovskite nanocrystals.
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Submitted 13 September, 2019;
originally announced September 2019.
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Symmetry breakdown in franckeite: spontaneous strain, rippling and interlayer moiré
Authors:
Riccardo Frisenda,
Gabriel Sanchez-Santolino,
Nikos Papadopoulos,
Joanna Urban,
Michal Baranowski,
Alessandro Surrente,
Duncan K. Maude,
Mar Garcia-Hernandez,
Herre S. J. van der Zant,
Paulina Plochocka,
Pablo San-Jose,
Andres Castellanos-Gomez
Abstract:
Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain…
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Franckeite is a naturally occurring layered mineral with a structure composed of alternating stacks of SnS2-like and PbS-like layers. Although this superlattice is composed of a sequence of isotropic two-dimensional layers, it exhibits a spontaneous rippling that makes the material structurally anisotropic. We demonstrate that this rippling comes hand in hand with an inhomogeneous in-plane strain profile and anisotropic electrical, vibrational and optical properties. We argue that this symmetry breakdown results from a spatial modulation of the van der Waals interaction between layers due to the SnS2-like and PbS-like lattices incommensurability.
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Submitted 11 June, 2020; v1 submitted 11 August, 2019;
originally announced August 2019.
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Non equilibrium anisotropic excitons in atomically thin ReS$_2$
Authors:
J. M. Urban,
M. Baranowski,
A. Kuc,
L. Klopotowski,
A. Surrente,
Y. Ma,
D. Wlodarczyk,
A. Suchocki,
D. Ovchinnikov,
T. Heine,
D. K. Maude,
A. Kis,
P. Plochocka
Abstract:
We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Bo…
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We present a systematic investigation of the electronic properties of bulk and few layer ReS$_2$ van der Waals crystals using low temperature optical spectroscopy. Weak photoluminescence emission is observed from two non-degenerate band edge excitonic transitions separated by $\sim$ 20 meV. The comparable emission intensity of both excitonic transitions is incompatible with a fully thermalized (Boltzmann) distribution of excitons, indicating the hot nature of the emission. While DFT calculations predict bilayer ReS$_2$ to have a direct fundamental band gap, our optical data suggests that the fundamental gap is indirect in all cases.
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Submitted 8 November, 2018;
originally announced November 2018.
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Moiré Intralayer Excitons in a MoSe$_2$/MoS$_2$ Heterostructure
Authors:
Nan Zhang,
Alessandro Surrente,
Michal Baranowski,
Duncan K. Maude,
Patricia Gant,
Andres Castellanos-Gomez,
Paulina Plochocka
Abstract:
Spatially periodic structures with a long range period, referred to as moiré pattern, can be obtained in van der Waals bilayers in the presence of a small stacking angle or of lattice mismatch between the monolayers. Theoretical predictions suggest that the resulting spatially periodic variation of the band structure modifies the optical properties of both intra and interlayer excitons of transiti…
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Spatially periodic structures with a long range period, referred to as moiré pattern, can be obtained in van der Waals bilayers in the presence of a small stacking angle or of lattice mismatch between the monolayers. Theoretical predictions suggest that the resulting spatially periodic variation of the band structure modifies the optical properties of both intra and interlayer excitons of transition metal dichalcogenides heterostructures. Here, we report on the impact of the moiré pattern formed in a MoSe$_2$/MoS$_2$ heterobilayer encapsulated in hexagonal boron nitride. The periodic in-plane potential results in a splitting of the MoSe$_2$ exciton and trion in both emission and absorption spectra. The observed energy difference between the split peaks is fully consistent with theoretical predictions.
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Submitted 8 November, 2018;
originally announced November 2018.
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Static and Dynamic Disorder in Triple-Cation Hybrid Perovskites
Authors:
M. Baranowski,
J. M. Urban,
N. Zhang,
A. Surrente,
D. K. Maude,
Zahra Andaji-Garmaroudi,
S. D. Stranks,
P. Plochocka
Abstract:
A detailed understanding of the carrier dynamics and emission characteristics of organic-inorganic lead halide perovskites is critical for their optoelectronic and energy harvesting applications. In this work, we reveal the impact of the crystal lattice disorder on the photo-generated electron-hole pairs through low-temperature photoluminescence measurements. We provide strong evidence that the in…
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A detailed understanding of the carrier dynamics and emission characteristics of organic-inorganic lead halide perovskites is critical for their optoelectronic and energy harvesting applications. In this work, we reveal the impact of the crystal lattice disorder on the photo-generated electron-hole pairs through low-temperature photoluminescence measurements. We provide strong evidence that the intrinsic disorder forms a sub-bandgap tail density of states, which determines the emission properties at low temperature. The PL spectra indicate that the disorder evolves with increasing temperature, changing its character from static to dynamic. This change is accompanied by a rapid drop of the PL efficiency, originating from the increased mobility of excitons/polarons, which enables them to reach deep non-radiative recombination centers more easily.
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Submitted 2 August, 2018;
originally announced August 2018.
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Intervalley Scattering of Interlayer Excitons in a MoS$_2$/MoSe$_2$/MoS$_2$ Heterostructure in High Magnetic Field
Authors:
Alessandro Surrente,
Lukasz Klopotowski,
Nan Zhang,
Michal Baranowski,
Anatolie A. Mitioglu,
Mariana V. Ballottin,
Peter C. M. Christianen,
Dumitru Dumcenco,
Yen-Cheng Kung,
Duncan K. Maude,
Andras Kis,
Paulina Plochocka
Abstract:
Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarizati…
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Degenerate extrema in the energy dispersion of charge carriers in solids, also referred to as valleys, can be regarded as a binary quantum degree of freedom, which can potentially be used to implement valleytronic concepts in van der Waals heterostructures based on transition metal dichalcogenides. Using magneto-photoluminescence spectroscopy, we achieve a deeper insight into the valley polarization and depolarization mechanisms of interlayer excitons formed across a MoS$_2$/MoSe$_2$/MoS$_2$ heterostructure. We account for the non-trivial behavior of the valley polarization as a function of the magnetic field by considering the interplay between exchange interaction and phonon mediated intervalley scattering in a system consisting of Zeeman-split energy levels. Our results represent a crucial step towards the understanding of the properties of interlayer excitons, with strong implications for the implementation of atomically thin valleytronic devices.
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Submitted 25 May, 2018;
originally announced May 2018.
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Probing Landau levels of strongly interacting massive Dirac electrons in layer-polarized MoS$_2$
Authors:
Jiangxiazi Lin,
Tianyi Han,
Benjamin A. Piot,
Zefei Wu,
Shuigang Xu,
Gen Long,
Liheng An,
Patrick Ka Man Cheung,
Peng-Peng Zheng,
Paulina Plochocka,
Duncan K. Maude,
Fan Zhang,
Ning Wang
Abstract:
Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong i…
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Monolayer transition metal dichalcogenides are recently emerged 2D electronic systems with various novel properties, such as spin-valley locking, circular dichroism, valley Hall effects, Ising superconductivity. The reduced dimensionality and large effective masses further produce unconventional many-body interaction effects. Although recent hole transport measurements in WSe$_2$ indicate strong interactions in the valence bands, many-body interaction effects, particularly in the conduction bands, remain elusive to date. Here, for the first time, we perform transport measurements up to a magnetic field of $29$T to study the massive Dirac electron Landau levels (LL) in layer-polarized MoS$_2$ samples with mobilities of $22000$cm$^2$/(V$\cdot$s) at $1.5$K and densities of $\sim10^{12}$cm$^{-2}$. With decreasing the density, we observe LL crossing induced valley ferrimagnet-to-ferromagnet transitions, as a result of the interaction enhancement of the g-factor from $5.64$ to $21.82$. Near integer ratios of Zeeman-to-cyclotron energies, we discover LL anticrossings due to the formation of quantum Hall Ising ferromagnets, the valley polarizations of which appear to be reversible by tuning the density or an in-plane magnetic field. Our results provide compelling evidence for many-body interaction effects in the conduction bands of monolayer MoS$_2$ and establish a fertile ground for exploring strongly correlated phenomena of massive Dirac electrons.
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Submitted 21 March, 2018;
originally announced March 2018.
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Revealing the nature of excitons in liquid exfoliated monolayer WS2
Authors:
Ł. Kłopotowski,
C. Backes,
A. A. Mitioglu,
V. Vega-Mayoral,
D. Hanlon,
J. N. Coleman,
V. Y. Ivanov,
D. K. Maude,
P. Plochocka
Abstract:
Transition metal dichalcogenides hold promise for applications in novel optoelectronic devices. There is therefore a need for materials that can be obtained in large quantities and with well understood optical properties. In this report, we present a thorough photoluminescence (PL) investigations of monolayer tungsten disulphide obtained via liquid phase exfoliation. As shown by microscopy studies…
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Transition metal dichalcogenides hold promise for applications in novel optoelectronic devices. There is therefore a need for materials that can be obtained in large quantities and with well understood optical properties. In this report, we present a thorough photoluminescence (PL) investigations of monolayer tungsten disulphide obtained via liquid phase exfoliation. As shown by microscopy studies, the exfoliated nanosheets have dimensions of tens of nanometers and thickness of 2.5 monolayers on average. The monolayer content is about 20%. Our studies show that at low temperature the photoluminescence is dominated by excitons localized on nanosheet edges. As a consequence, the PL is strongly sensitive to environment and exhibits an enhanced splitting in magnetic field. As the temperature is increased, the excitons are thermally excited out of the defect states and the dominant transition is that of the negatively charged exciton. Furthermore, upon excitation with a circularly polarized light, the PL retains a degree of polarization reaching 50% and inherited from the valley polarized photoexcited excitons. The studies of PL dynamics reveal that the PL lifetime is on the order of 10 ps, probably limited by non-radiative processes. Our results underline the potential of liquid exfoliated TMD monolayers in large scale optoelectronic devices.
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Submitted 3 January, 2018;
originally announced January 2018.
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Observation of A$_g^1$ Raman mode splitting in few layers black phosphorus encapsulated with hexagonal boron nitride
Authors:
J. M. Urban,
M. Baranowski,
A. Surrente,
D. Wlodarczyk,
A. Suchocki,
G. Long,
Y. Wang,
L. Klopotowski,
N. Wang,
D. K. Maude,
P. Plochocka
Abstract:
We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilay…
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We investigate the impact of the encapsulation with hexagonal boron nitride (h-BN) on the Raman spectrum of few layer black phosphorus. The encapsulation results in a significant reduction of the line width of the Raman modes of black phosphorus, due to a reduced phonon scattering rate. We observe a so far elusive peak in the Raman spectra $\sim$4cm$^{-1}$ above the A$_{\text{g}}^1$ mode in trilayer and thicker flakes, which had not been observed experimentally. The newly observed mode originates from the strong black phosphorus inter-layer interaction, which induces a hardening of the surface atoms vibration with respect to the corresponding modes of the inner layers. The observation of this mode suggests a significant impact of h-BN encapsulation on the properties of black phosphorus and can serve as an indicator of the quality of its surface.
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Submitted 22 November, 2017;
originally announced November 2017.
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Probing the inter-layer exciton physics in a MoS$_2$/MoSe$_2$/MoS$_2$ van der Waals heterostructure
Authors:
M. Baranowski,
A. Surrente,
L. Klopotowski,
J. M. Urban,
N. Zhang,
D. K. Maude,
K. Wiwatowski,
S. Mackowski,
Y. C. Kung,
D. Dumcenco,
A. Kis,
P. Plochocka
Abstract:
Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe…
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Stacking atomic monolayers of semiconducting transition metal dichalcogenides (TMDs) has emerged as an effective way to engineer their properties. In principle, the staggered band alignment of TMD heterostructures should result in the formation of inter-layer excitons with long lifetimes and robust valley polarization. However, these features have been observed simultaneously only in MoSe$_2$/WSe$_2$ heterostructures. Here we report on the observation of long lived inter-layer exciton emission in a MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructure. The inter-layer nature of the observed transition is confirmed by photoluminescence spectroscopy, as well as by analyzing the temporal, excitation power and temperature dependence of the inter-layer emission peak. The observed complex photoluminescence dynamics suggests the presence of quasi-degenerate momentum-direct and momentum-indirect bandgaps. We show that circularly polarized optical pum** results in long lived valley polarization of inter-layer exciton. Intriguingly, the inter-layer exciton photoluminescence has helicity opposite to the excitation. Our results show that through a careful choice of the TMDs forming the van der Waals heterostructure it is possible to control the circular polarization of the inter-layer exciton emission.
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Submitted 13 September, 2017;
originally announced September 2017.
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The impact of the halide cage on the electronic properties of fully inorganic caesium lead halide perovskites
Authors:
Z. Yang,
A. Surrente,
K. Galkowski,
A. Miyata,
O. Portugall,
R. J. Sutton,
A. A. Haghighirad,
H. J. Snaith,
D. K. Maude,
P. Plochocka,
R. J. Nicholas
Abstract:
Perovskite solar cells with record power conversion efficiency are fabricated by alloying both hybrid and fully inorganic compounds. While the basic electronic properties of the hybrid perovskites are now well understood, key electronic parameters for solar cell performance, such as the exciton binding energy of fully inorganic perovskites, are still unknown. By performing magneto transmission mea…
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Perovskite solar cells with record power conversion efficiency are fabricated by alloying both hybrid and fully inorganic compounds. While the basic electronic properties of the hybrid perovskites are now well understood, key electronic parameters for solar cell performance, such as the exciton binding energy of fully inorganic perovskites, are still unknown. By performing magneto transmission measurements, we determine with high accuracy the exciton binding energy and reduced mass of fully inorganic CsPbX$_3$ perovskites (X=I, Br, and an alloy of these). The well behaved (continuous) evolution of the band gap with temperature in the range $4-270$\,K suggests that fully inorganic perovskites do not undergo structural phase transitions like their hybrid counterparts. The experimentally determined dielectric constants indicate that at low temperature, when the motion of the organic cation is frozen, the dielectric screening mechanism is essentially the same both for hybrid and inorganic perovskites, and is dominated by the relative motion of atoms within the lead-halide cage.
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Submitted 14 June, 2017;
originally announced June 2017.
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Ultrahigh magnetic field spectroscopy reveals the band structure of the 3D topological insulator Bi$_2$Se$_3$
Authors:
A. Miyata,
Z. Yang,
A. Surrente,
O. Drachenko,
D. K. Maude,
O. Portugall,
L. B. Duffy,
T. Hesjedal,
P. Plochocka,
R. J. Nicholas
Abstract:
We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear.…
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We have investigated the band structure at the $Γ$ point of the three-dimensional (3D) topological insulator Bi$_2$Se$_3$ using magneto-spectroscopy over a wide range of energies ($0.55-2.2$\,eV) and in ultrahigh magnetic fields up to 150\,T. At such high energies ($E>0.6$\,eV) the parabolic approximation for the massive Dirac fermions breaks down and the Landau level dispersion becomes nonlinear. At even higher energies around 0.99 and 1.6 eV, new additional strong absorptions are observed with a temperature and magnetic-field dependence which suggest that they originate from higher band gaps. Spin orbit splittings for the further lying conduction and valence bands are found to be 0.196 and 0.264 eV.
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Submitted 2 June, 2017;
originally announced June 2017.
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Revealing large-scale homogeneity and trace impurity sensitivity of GaAs nanoscale membranes
Authors:
Z. Yang,
A. Surrente,
G. Tutuncuoglu,
K. Galkowski,
M. Cazaban-Carraze,
F. Amaduzzi,
P. Leroux,
D. K. Maude,
A. Fontcuberta i Morral,
P. Plochocka
Abstract:
III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very hi…
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III-V nanostructures have the potential to revolutionize optoelectronics and energy harvesting. For this to become a reality, critical issues such as reproducibility and sensitivity to defects should be resolved. By discussing the optical properties of MBE grown GaAs nanomembranes we highlight several features that bring them closer to large scale applications. Uncapped membranes exhibit a very high optical quality, expressed by extremely narrow neutral exciton emission, allowing the resolution of the more complex excitonic structure for the first time. Cap** of the membranes with an AlGaAs shell results in a strong increase of emission intensity but also to a shift and broadening of the exciton peak. This is attributed to the existence of impurities in the shell, beyond MBE-grade quality, showing the high sensitivity of these structures to the presence of impurities. Finally, emission properties are identical at the sub-micron and sub-millimeter scale, demonstrating the potential of these structures for large scale applications.
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Submitted 27 April, 2017;
originally announced April 2017.
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Defect healing and charge transfer mediated valley polarization in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures
Authors:
Alessandro Surrente,
Dumitru Dumcenco,
Zhuo Yang,
Agnieszka Kuc,
Yu **g,
Thomas Heine,
Yen-Cheng Kung,
Duncan K. Maude,
Andras Kis,
Paulina Plochocka
Abstract:
Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-function…
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Monolayer transition metal dichalcogenides (TMDC) grown by chemical vapor deposition (CVD) are plagued by a significantly lower optical quality compared to exfoliated TMDC. In this work we show that the optical quality of CVD-grown MoSe$_2$ is completely recovered if the material is sandwiched in MoS$_2$/MoSe$_2$/MoS$_2$ trilayer van der Waals heterostructures. We show by means of density-functional theory that this remarkable and unexpected result is due to defect healing: S atoms of the more reactive MoS$_2$ layers are donated to heal Se vacancy defects in the middle MoSe$_2$ layer. In addition, the trilayer structure exhibits a considerable charge-transfer mediated valley polarization of MoSe$_2$ without the need for resonant excitation. Our fabrication approach, relying solely on simple flake transfer technique, paves the way for the scalable production of large-area TMDC materials with excellent optical quality.
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Submitted 14 June, 2017; v1 submitted 2 March, 2017;
originally announced March 2017.
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Unraveling the exciton binding energy and the dielectric constant in single crystal methylammonium lead tri-iodide perovskite
Authors:
Zhuo Yang,
Alessandro Surrente,
Krzysztof Galkowski,
Nicolas Bruyant,
Duncan K. Maude,
Amir Abbas Haghighirad,
Henry J. Snaith,
Paulina Plochocka,
Robin J. Nicholas
Abstract:
We have accurately determined the exciton binding energy and reduced mass of single crystals of methylammonium lead tri-iodide using magneto-reflectivity at very high magnetic fields. The single crystal has excellent optical properties with a narrow line width of $\sim 3$meV for the excitonic transitions and a 2s transition which is clearly visible even at zero magnetic field. The exciton binding…
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We have accurately determined the exciton binding energy and reduced mass of single crystals of methylammonium lead tri-iodide using magneto-reflectivity at very high magnetic fields. The single crystal has excellent optical properties with a narrow line width of $\sim 3$meV for the excitonic transitions and a 2s transition which is clearly visible even at zero magnetic field. The exciton binding energy of $16 \pm 2$meV in the low temperature orthorhombic phase is almost identical to the value found in polycrystalline samples, crucially ruling out any possibility that the exciton binding energy depends on the grain size. In the room temperature tetragonal phase, an upper limit for the exciton binding energy of $12 \pm 4$ meV is estimated from the evolution of 1s-2s splitting at high magnetic field.
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Submitted 27 April, 2017; v1 submitted 18 January, 2017;
originally announced January 2017.
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Dark excitons and the elusive valley polarization in transition metal dichalcogenides
Authors:
M. Baranowski,
A. Surrente,
D. K. Maude,
M Ballottin,
A. A. Mitioglu,
P. C. M. Christianen,
Y. C. Kung,
D. Dumcenco,
A. Kis,
P Plochocka
Abstract:
A rate equation model for the dark and bright excitons kinetics is proposed which explains the wide variation in the observed degree of circular polarization of the PL emission in different TMDs monolayers. Our work suggests that the dark exciton states play an important, and previously unsuspected role in determining the degree of polarization of the PL emission. A dark exciton ground state provi…
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A rate equation model for the dark and bright excitons kinetics is proposed which explains the wide variation in the observed degree of circular polarization of the PL emission in different TMDs monolayers. Our work suggests that the dark exciton states play an important, and previously unsuspected role in determining the degree of polarization of the PL emission. A dark exciton ground state provides a robust reservoir for valley polarization, which tries to maintain a Boltzmann distribution of the bright exciton states in the same valley via the intra valley bright dark exciton scattering mechanism. The dependence of the degree of circular polarization on the detuning energy of the excitation in MoSe$_2$ suggests that the electron-hole exchange interaction dominates over two LA phonon emission mechanism for inter valley scattering in TMDs.
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Submitted 17 January, 2017; v1 submitted 11 January, 2017;
originally announced January 2017.
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A microscopic model for the magnetic field driven breakdown of the dissipationless state in the integer and fractional quantum Hall effect
Authors:
A. Poux,
Z. R. Wasilewski,
K. J. Friedland,
R. Hey,
K. H. Ploog,
R. Airey,
P. Plochocka,
D. K. Maude
Abstract:
Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperat…
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Intra Landau level thermal activation, from localized states in the tail, to delocalized states above the mobility edge in the same Landau level, explains the $B_c(T)$ (half width of the dissipationless state) phase diagram for a number of different quantum Hall samples with widely ranging carrier density, mobility and disorder. Good agreement is achieved over $2-3$ orders of magnitude in temperature and magnetic field for a wide range of filling factors. The Landau level width is found to be independent of magnetic field. The mobility edge moves, in the case of changing Landau level overlap to maintain a sample dependent critical density of states at that energy. An analysis of filling factor $ν=2/3$ shows that the composite Fermion Landau levels have exactly the same width as their electron counterparts. An important ingredient of the model is the Lorentzian broadening with long tails which provide localized states deep in the gap which are essential in order to reproduce the robust high temperature $B_c(T)$ phase observed in experiment.
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Submitted 2 September, 2016;
originally announced September 2016.
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Spatially resolved studies of the phases and morphology of methylammonium and formamidinium lead tri-halide perovskites
Authors:
K. Galkowski,
A. Mitioglu,
A. Surrente,
Z. Yang,
D. K. Maude,
P. Kossacki,
G. E. Eperon,
J. T-W. Wang,
H. J. Snaith,
P. Plochocka,
R. J. Nicholas
Abstract:
The family of organic-inorganic tri-halide perovskites including MA (MethylAmmonium)PbI$_{3}$, MAPbI$_{3-x}$Cl$_{x}$, FA (FormAmidinium)PbI$_{3}$ and FAPbBr$_{3}$ are having a tremendous impact on the field of photovoltaic cells due to their ease of deposition and efficiencies, but device performance can be significanly affected by inhomogeneities. Here we report a study of temperature dependent m…
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The family of organic-inorganic tri-halide perovskites including MA (MethylAmmonium)PbI$_{3}$, MAPbI$_{3-x}$Cl$_{x}$, FA (FormAmidinium)PbI$_{3}$ and FAPbBr$_{3}$ are having a tremendous impact on the field of photovoltaic cells due to their ease of deposition and efficiencies, but device performance can be significanly affected by inhomogeneities. Here we report a study of temperature dependent micro-photoluminescence which shows a strong spatial inhomogeneity related to the presence of microcrystalline grains, which can be both light and dark. In all of the tri-iodide based materials there is evidence that the tetragonal to orthorhombic phase transition observed around 160K does not occur uniformly across the sample with domain formation related to the underlying microcrystallite grains, some of which remain in the high temperature, tetragonal, phase even at very low temperatures. At low temperature the tetragonal domains can be significantly influenced by local defects in the layers. In FAPbBr$_{3}$ a more macroscopic domain structure is observed with large numbers of grains forming phase correlated regions.
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Submitted 10 June, 2016;
originally announced June 2016.
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Onset of exciton-exciton annihilation in single layer black phosphorus
Authors:
A. Surrente,
A. A. Mitioglu,
K. Galkowski,
L. Klopotowski,
W. Tabis,
B. Vignolle,
D. K. Maude,
P. Plochocka
Abstract:
The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, non-exponential component develops as exciton-exciton annihilation takes over…
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The exciton dynamics in monolayer black phosphorus is investigated over a very wide range of photoexcited exciton densities using time resolved photoluminescence. At low excitation densities, the exciton dynamics is successfully described in terms of a double exponential decay. With increasing exciton population, a fast, non-exponential component develops as exciton-exciton annihilation takes over as the dominant recombination mechanism under high excitation conditions. Our results identify an upper limit for the injection density, after which exciton-exciton annihilation reduces the quantum yield, which will significantly impact the performance of light emitting devices based on single layer black phosphorus.
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Submitted 29 August, 2016; v1 submitted 23 May, 2016;
originally announced May 2016.
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The hole Fermi surface in Bi$_{2}$Se$_{3}$ probed by quantum oscillations
Authors:
B. A. Piot,
W. Desrat,
D. K. Maude,
M. Orlita,
M. Potemski,
G. Martinez,
Y. S. Hor
Abstract:
Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular de…
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Transport and torque magnetometry measurements are performed at high magnetic fields and low temperatures in a series of p-type (Ca-doped) Bi$_{2}$Se$_{3}$ crystals. The angular dependence of the Shubnikov-de Haas and de Haas-van Alphen quantum oscillations enables us to determine the Fermi surface of the bulk valence band states as a function of the carrier density. At low density, the angular dependence exhibits a downturn in the oscillations frequency between $0^\circ$ and $90^\circ$, reflecting a bag-shaped hole Fermi surface. The detection of a single frequency for all tilt angles rules out the existence of a Fermi surface with different extremal cross-sections down to $24$~meV. There is therefore no signature of a camel-back in the valence band of our bulk samples, in accordance with the direct band gap predicted by $GW$ calculations.
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Submitted 8 March, 2016;
originally announced March 2016.
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Magneto-excitons in large area CVD grown monolayer MoS$_{2}$ and MoSe$_{2}$ on sapphire
Authors:
A. A. Mitioglu,
K. Galkowski,
A. Surrente,
L. Klopotowski,
D. Dumcenco,
A. Kis,
D. K. Maude,
P. Plochocka
Abstract:
Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is ma…
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Magneto transmission spectroscopy was employed to study the valley Zeeman effect in large-area monolayer MoS$_{2}$ and MoSe$_{2}$. The extracted values of the valley g-factors for both A- and B-exciton were found be similar with $g_v \simeq -4.5$. The samples are expected to be strained due to the CVD growth on sapphire at high temperature ($700^\circ$C). However, the estimated strain, which is maximum at low temperature, is only $\simeq 0.2\%$. Theoretical considerations suggest that the strain is too small to significantly influence the electronic properties. This is confirmed by the measured value of valley g-factor, and the measured temperature dependence of the band gap, which are almost identical for CVD and mechanically exfoliated MoS$_2$.
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Submitted 12 April, 2016; v1 submitted 3 February, 2016;
originally announced February 2016.
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Excitons in atomically thin black phosphorus
Authors:
A. Surrente,
A. A. Mitioglu,
K. Galkowski,
W. Tabis,
D. K. Maude,
P. Plochocka
Abstract:
Raman scattering and photoluminescence spectroscopy are used to investigate the optical properties of single layer black phosphorus obtained by mechanical exfoliation of bulk crystals under an argon atmosphere. The Raman spectroscopy, performed in situ on the same flake as the photoluminescence measurements, demonstrates the single layer character of the investigated samples. The emission spectra,…
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Raman scattering and photoluminescence spectroscopy are used to investigate the optical properties of single layer black phosphorus obtained by mechanical exfoliation of bulk crystals under an argon atmosphere. The Raman spectroscopy, performed in situ on the same flake as the photoluminescence measurements, demonstrates the single layer character of the investigated samples. The emission spectra, dominated by excitonic effects, display the expected in plane anisotropy. The emission energy depends on the type of substrate on which the flake is placed due to the different dielectric screening. Finally, the blue shift of the emission with increasing temperature is well described using a two oscillator model for the temperature dependence of the band gap.
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Submitted 15 March, 2016; v1 submitted 6 January, 2016;
originally announced January 2016.
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Disorder-induced stabilization of the quantum Hall ferromagnet
Authors:
B. A. Piot,
W. Desrat,
D. K. Maude,
D. Kazazis,
A. Cavanna,
U. Gennser
Abstract:
We report on an absolute measurement of the electronic spin polarization of the $ν=1$ integer quantum Hall state. The spin polarization is extracted in the vicinity of $ν=1$ (including at exactly $ν=1$) via resistive NMR experiments performed at different magnetic fields (electron densities), and Zeeman energy configurations. At the lowest magnetic fields, the polarization is found to be complete…
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We report on an absolute measurement of the electronic spin polarization of the $ν=1$ integer quantum Hall state. The spin polarization is extracted in the vicinity of $ν=1$ (including at exactly $ν=1$) via resistive NMR experiments performed at different magnetic fields (electron densities), and Zeeman energy configurations. At the lowest magnetic fields, the polarization is found to be complete in a narrow region around $ν=1$. Increasing the magnetic field (electron density) induces a significant depolarization of the system, which we attribute to a transition between the quantum Hall ferromagnet and the Skyrmion glass phase theoretically expected as the ratio between Coulomb interactions and disorder is increased. These observations account for the fragility of the polarization previously observed in high mobility 2D electron gas, and experimentally demonstrate the existence of an optimal amount of disorder to stabilize the ferromagnetic state.
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Submitted 15 October, 2015;
originally announced October 2015.
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Intervalley scattering of excitons and trions in monolayer WSe$_{2}$ under strong excitation
Authors:
A. A. Mitioglu,
L. Klopotowski,
D. K. Maude,
G. Deligeorgis,
S. Anghel,
L. Kulyuk,
P. Plochocka
Abstract:
Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential. In this work, we apply low temperature time-resolved photoluminescence (PL) measurements to investigate exciton valley relaxation dynamics and, in particular,…
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Monolayer transition metal dichalcogenides offer the possibility of optical control of the valley degree of freedom. In order to asses the potential of these materials in applications, detailed knowledge of the valley dynamics is essential. In this work, we apply low temperature time-resolved photoluminescence (PL) measurements to investigate exciton valley relaxation dynamics and, in particular, its behavior under strong excitation. At the lowest excitation powers the inter valley scattering time is $\simeq 50$ ps, but shortens by more than a factor of two at the highest powers. We attribute this acceleration to either heating of the exciton system or the presence of a dense exciton gas, which could influence the exciton valley properties. Furthermore, we analyze the PL dynamics of excitons and trions. We find that the PL decays for all peaks are bi-exponential and approximately independent of the excitation power. We attribute the short decay to radiative recombination and escape to a reservoir of dark states. The long decay is ascribed to a transfer of excitons back from the reservoir. For the first time, we evaluate the exciton PL decay time of $\simeq$ 10 ps. The latter process is valley-conserving and occurs on a timescale of $\simeq$ 50 ps.
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Submitted 2 July, 2015;
originally announced July 2015.
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Optical investigation of monolayer and bulk tungsten diselenide (WSe$_{2}$) in high magnetic fields
Authors:
A. A. Mitioglu,
P. Plochocka,
Á. Granados del Aguila,
P. C. M. Christianen,
G. Deligeorgis,
S. Anghel,
L. Kulyuk,
D. K. Maude
Abstract:
Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the magnetic field and exhibits a splitting which originates from the magnetic field induced valley splitting. The monolayer data can be described using a single par…
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Optical spectroscopy in high magnetic fields $B\leq65$ T is used to reveal the very different nature of carriers in monolayer and bulk transition metal dichalcogenides. In monolayer WSe$_{2}$, the exciton emission shifts linearly with the magnetic field and exhibits a splitting which originates from the magnetic field induced valley splitting. The monolayer data can be described using a single particle picture with a Dirac-like Hamiltonian for massive Dirac fermions, with an additional term to phenomenologically include the valley splitting. In contrast, in bulk WSe$_{2}$ where the inversion symmetry is restored, transmission measurements show a distinctly excitonic behavior with absorption to the 1s and 2s states. Magnetic field induces a spin splitting together with a small diamagnetic shift and cyclotron like behavior at high fields, which is best described within the hydrogen model.
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Submitted 15 June, 2015; v1 submitted 12 June, 2015;
originally announced June 2015.
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Magneto-resistance quantum oscillations in a magnetic two-dimensional electron gas
Authors:
J. Kunc,
B. A. Piot,
D. K. Maude,
M. Potemski,
R. Grill,
C. Betthausen,
D. Weiss,
V. Kolkovsky,
G. Karczewski,
T. Wojtowicz
Abstract:
Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts with magnetic Mn ions, can be described by incorporating the electron-Mn exchange interaction into the traditional Lifshitz-Kosevich formalism. The modified spin s…
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Magneto-transport measurements of Shubnikov-de Haas (SdH) oscillations have been performed on two-dimensional electron gases (2DEGs) confined in CdTe and CdMnTe quantum wells. The quantum oscillations in CdMnTe, where the 2DEG interacts with magnetic Mn ions, can be described by incorporating the electron-Mn exchange interaction into the traditional Lifshitz-Kosevich formalism. The modified spin splitting leads to characteristic beating pattern in the SdH oscillations, the study of which indicates the formation of Mn clusters resulting in direct anti-ferromagnetic Mn-Mn interaction. The Landau level broadening in this system shows a peculiar decrease with increasing temperature, which could be related to statistical fluctuations of the Mn concentration.
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Submitted 11 June, 2015; v1 submitted 10 June, 2015;
originally announced June 2015.
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Second order resonant Raman scattering in single layer tungsten disulfide (WS$_{2}$)
Authors:
A. A. Mitioglu,
P. Plochocka,
G. Deligeorgis,
S. Anghel,
L. Kulyuk,
D. K. Maude
Abstract:
Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of…
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Resonant Raman spectra of single layer WS$_{2}$ flakes are presented. A second order Raman peak (2LA) appears under resonant excitation with a separation from the E$^{1}_{2g}$ mode of only $4$cm$^{-1}$. Depending on the intensity ratio and the respective line widths of these two peaks, any analysis which neglects the presence of the 2LA mode can lead to an inaccurate estimation of the position of the E$^{1}_{2g}$ mode, leading to a potentially incorrect assignment for the number of layers. Our results show that the intensity of the 2LA mode strongly depends on the angle between the linear polarization of the excitation and detection, a parameter which is neglected in many Raman studies.
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Submitted 27 June, 2014; v1 submitted 13 June, 2014;
originally announced June 2014.
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Unintentional high density p-type modulation do** of a GaAs/AlAs core-multi-shell nanowire
Authors:
J. Jadczak,
P. Plochocka,
A. Mitioglu,
I. Breslavetz,
M. Royo,
A. Bertoni,
G. Goldoni,
T. Smolenski,
P. Kossacki,
Hadas Shtrikman,
D. K. Maude
Abstract:
Achieving significant do** in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type do**. Magneto-optical studies of such a GaAs/AlAs…
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Achieving significant do** in GaAs/AlAs core/shell nanowires (NWs) is of considerable technological importance but remains a challenge due to the amphoteric behavior of the dopant atoms. Here we show that placing a narrow GaAs quantum well in the AlAs shell effectively getters residual carbon acceptors leading to an \emph{unintentional} p-type do**. Magneto-optical studies of such a GaAs/AlAs core multi-shell NW reveal quantum confined emission. Theoretical calculations of NW electronic structure confirm quantum confinement of carriers at the core/shell interface due to the presence of ionized carbon acceptors in the 1~nm GaAs layer in the shell. Micro-photoluminescence in high magnetic field shows a clear signature of avoided crossings of the $n=0$ Landau level emission line with the $n=2$ Landau level TO phonon replica. The coupling is caused by the resonant hole-phonon interaction, which points to a large 2D hole density in the structure.
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Submitted 23 April, 2014;
originally announced April 2014.
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Dispersive line shape in the vicinity of the ν = 1 quantum Hall state: Coexistence of Knight shifted and unshifted resistively detected NMR responses
Authors:
W. Desrat,
B. A. Piot,
S. Krämer,
D. K. Maude,
Z. R. Wasilewski,
M. Henini,
R. Airey
Abstract:
The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knigh…
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The frequency splitting between the dip and the peak of the resistively detected nuclear magnetic resonance (RDNMR) dispersive line shape (DLS) has been measured in the quantum Hall effect regime as a function of filling factor, carrier density and nuclear isotope. The splitting increases as the filling factor tends to ν = 1 and is proportional to the hyperfine coupling, similar to the usual Knight shift versus ν-dependence. The peak frequency shifts linearly with magnetic field throughout the studied filling factor range and matches the unshifted substrate signal, detected by classical NMR. Thus, the evolution of the splitting is entirely due to the changing Knight shift of the dip feature. The nuclear spin relaxation time, T1, is extremely long (hours) at precisely the peak frequency. These results are consistent with the local formation of a ν = 2 phase due to the existence of spin singlet D$^-$ complexes.
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Submitted 18 December, 2013;
originally announced December 2013.
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Optical manipulation of the exciton charge state in single layer tungsten disulfide
Authors:
A. A. Mitioglu,
P. Plochocka,
J. N. Jadczak,
W. Escoffier,
G. L. J. A. Rikken,
L. Kulyuk,
D. K. Maude
Abstract:
Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover…
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Raman scattering and photoluminescence (PL) emission are used to investigate a single layer of tungsten disulfide (WS$_{2}$) obtained by exfoliating n-type bulk crystals. Direct gap emission with both neutral and charged exciton recombination is observed in the low temperature PL spectra. The ratio between the trion and exciton emission can be tuned simply by varying the excitation power. Moreover, the intensity of the trion emission can be independently tuned using additional sub band gap laser excitation.
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Submitted 4 December, 2013;
originally announced December 2013.
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High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire
Authors:
P. Plochocka,
A. A. Mitioglu,
D. K. Maude,
G. L. J. A. Rikken,
A. Granados del Aguila,
P. C. M. Christianen,
P. Kacman,
Hadas Shtrikman
Abstract:
Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial…
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Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.
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Submitted 13 May, 2013;
originally announced May 2013.
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Phase-space for the breakdown of the quantum Hall effect in epitaxial graphene
Authors:
J. A. Alexander-Webber,
A. M. R. Baker,
T. J. B. M. Janssen,
A. Tzalenchuk,
S. Lara-Avila,
S. Kubatkin,
R. Yakimova,
B. A. Piot,
D. K. Maude,
R. J. Nicholas
Abstract:
We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$)…
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We report the phase-space defined by the quantum Hall effect breakdown in polymer gated epitaxial graphene on SiC (SiC/G) as a function of temperature, current, carrier density, and magnetic fields up to 30T. At 2K breakdown currents ($I_c$) almost two orders of magnitude greater than in GaAs devices are observed. The phase boundary of the dissipationless state ($ρ_{xx}=0$) shows a (1-$(T/T_c)^2$) dependence and persists up to $T_c>45K$ at 29T. With magnetic field $I_c$ was found to increase $\propto B^{3/2}$ and $T_c \propto B^{1.88}$. As the Fermi energy approaches the Dirac point, the $ν=2$ quantized Hall plateau appears continuously from fields as low as 1T up to at least 19T due to a strong magnetic field dependence of the carrier density.
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Submitted 17 April, 2013;
originally announced April 2013.
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Classical percolation fingerprints in the high-temperature regime of the integer quantum Hall effect
Authors:
M. Flöser,
B. A. Piot,
C. L. Campbell,
D. K. Maude,
M. Henini,
R. Airey,
Z. R. Wasilewski,
S. Florens,
T. Champel
Abstract:
We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover ma…
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We have performed magnetotransport experiments in the high-temperature regime (up to 50 K) of the integer quantum Hall effect for two-dimensional electron gases in semiconducting heterostructures. While the magnetic field dependence of the classical Hall law presents no anomaly at high temperatures, we find a breakdown of the Drude-Lorentz law for the longitudinal conductance beyond a crossover magnetic field B_c ~ 1 T, which turns out to be correlated with the onset of the integer quantum Hall effect at low temperatures. We show that the high magnetic field regime at B > B_c can be understood in terms of classical percolative transport in a smooth disordered potential. From the temperature dependence of the peak longitudinal conductance, we extract scaling exponents which are in good agreement with the theoretically expected values. We also prove that inelastic scattering on phonons is responsible for dissipation in a wide temperature range going from 1 to 50 K at high magnetic fields.
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Submitted 22 August, 2013; v1 submitted 10 December, 2012;
originally announced December 2012.
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Magnetotransport in graphene on silicon side of SiC
Authors:
P. Vasek,
L. Smrcka,
P. Svoboda,
V. Jurka,
M. Orlita,
D. K. Maude,
W. Strupinski,
R. Stepniewski,
R. Yakimova
Abstract:
We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of…
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We have studied the transport properties of graphene grown on silicon side of SiC. Samples under study have been prepared by two different growth methods in two different laboratories. Magnetoresistance and Hall resistance have been measured at temperatures between 4 and 100 K in resistive magnet in magnetic fields up to 22 T. In spite of differences in sample preparation, the field dependence of resistances measured on both sets of samples exhibits two periods of magneto-oscillations indicating two different parallel conducting channels with different concentrations of carriers. The semi-quantitative agreement with the model calculation allows for conclusion that channels are formed by high-density and low-density Dirac carriers. The coexistence of two different groups of carriers on the silicon side of SiC was not reported before.
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Submitted 24 April, 2013; v1 submitted 2 October, 2012;
originally announced October 2012.
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Magnetic-field-induced Stoner transition in a dilute quantum Hall system
Authors:
B. A. Piot,
D. K. Maude
Abstract:
In a recent paper [Phys.Rev.B.\textbf{84}, 161307 (2011)], experimental data on spin splitting in the integer quantum Hall effect has been reported in a high mobility dilute 2D electron gas with electron density as low as 0.2 $\times$ 10$^{11}$ cm $^{-2}$. In this work, we show that an excellent \emph{quantitative} description of these data can be obtained within the model of the magnetic-field-in…
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In a recent paper [Phys.Rev.B.\textbf{84}, 161307 (2011)], experimental data on spin splitting in the integer quantum Hall effect has been reported in a high mobility dilute 2D electron gas with electron density as low as 0.2 $\times$ 10$^{11}$ cm $^{-2}$. In this work, we show that an excellent \emph{quantitative} description of these data can be obtained within the model of the magnetic-field-induced Stoner transition in the quantum Hall regime. This provides a powerful tool to probe the non-trivial density dependance of electron-electron interactions in the dilute regime of the 2D electron gas.
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Submitted 17 July, 2012;
originally announced July 2012.
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Magneto-transport of graphene and quantum phase transitions in the quantum Hall regime
Authors:
Mario Amado,
Enrique Diez,
Francesco Rossella,
Vittorio Bellani,
David Lopez-Romero,
Duncan K Maude
Abstract:
We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. Thes…
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We studied the magneto-transport in SiO2 substrate-supported monolayer graphene and the quantum phase transitions that characterize the quantum Hall regime, using magnetic fields up to 28T and temperatures down to 4K. The analysis of the temperature dependence of the Hall and longitudinal resistivity reveals new non-universalities of the critical exponents of the plateau-insulator transition. These exponent depends on the type of disorder that governs the electrical transport, which knowledge is important for the design and fabrication of new graphene nano-devices.
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Submitted 17 April, 2012;
originally announced April 2012.
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Gap like structure in a nonsuperconducting layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystal
Authors:
S. I. Vedeneev,
B. A. Piot,
D. K. Maude
Abstract:
The magnetic field and temperature dependence of the in-plane tunneling conductance $dI/dV(V)$ in high-quality nonsuperconducting (down to 10 mK) layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystals has been investigated using break junctions. Combining measurements of the in-plane magnetoresistivity $ρ_{ab}(T,H)$ and the magnetotunneling, we present evidence for the exis…
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The magnetic field and temperature dependence of the in-plane tunneling conductance $dI/dV(V)$ in high-quality nonsuperconducting (down to 10 mK) layered oxycarbonate Bi$_{2+x}$Sr$_{4-x}$Cu$_2$CO$_3$O$_{8+δ}$ single crystals has been investigated using break junctions. Combining measurements of the in-plane magnetoresistivity $ρ_{ab}(T,H)$ and the magnetotunneling, we present evidence for the existence of a small "pseudogap" in a nonsuperconducting cuprate, without local incoherent pairs or any correlation phenomena associated with superconductivity. We are unable to distinguish if such a "pseudogap" is totally unrelated to superconductivity or if its existence is a necessary condition for the subsequent occurrence of superconductivity with increasing carrier density in the sample.
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Submitted 13 April, 2012;
originally announced April 2012.
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High Field magnetospectroscopy to probe the 1.4eV Ni color center in diamond
Authors:
P. Plochocka,
O. Portugall,
P. Y. Solane,
E. Gheeraert,
L. Ranno,
E. Bustarret,
N. Bruyant,
I. Breslavetz,
D. K. Maude,
H. Kanda,
G. L. J. A. Rikken
Abstract:
A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Nazaré, Nevers and Davies [Phys. Rev. B 43, 14196 (1991)] for interstitial Ni$^{+}$ with the electronic configuration $3d^{9}$ and effective spin $S=1/2$.…
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A magneto-optical study of the 1.4 eV Ni color center in boron-free synthetic diamond, grown at high pressure and high temperature, has been performed in magnetic fields up to 56 T. The data is interpreted using the effective spin Hamiltonian of Nazaré, Nevers and Davies [Phys. Rev. B 43, 14196 (1991)] for interstitial Ni$^{+}$ with the electronic configuration $3d^{9}$ and effective spin $S=1/2$. Our results unequivocally demonstrate the trigonal symmetry of the defect which preferentially aligns along the [111] growth direction on the (111) face, but reveal the shortcomings of the crystal field model for this particular defect.
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Submitted 5 March, 2012;
originally announced March 2012.
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NMR probing of the spin polarization of the nu=5/2 quantum Hall state
Authors:
M. Stern,
B. A. Piot,
Y. Vardi,
V. Umansky,
P. Plochocka,
D. K. Maude,
I. Bar-Joseph
Abstract:
Resistively detected nuclear magnetic resonance is used to measure the Knight shift of the As nuclei and determine the electron spin polarization of the fractional quantum Hall states of the second Landau level. We show that the 5/2 state is fully polarized within experimental error, thus confirming a fundamental assumption of the Moore-Read theory. We measure the electron heating under radio freq…
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Resistively detected nuclear magnetic resonance is used to measure the Knight shift of the As nuclei and determine the electron spin polarization of the fractional quantum Hall states of the second Landau level. We show that the 5/2 state is fully polarized within experimental error, thus confirming a fundamental assumption of the Moore-Read theory. We measure the electron heating under radio frequency excitation, and show that we are able to detect NMR at electron temperatures down to 30 mK.
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Submitted 17 January, 2012;
originally announced January 2012.
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The origin of electron-hole asymmetry in graphite
Authors:
P. Plochocka,
P. Y. Solane,
R. J. Nicholas,
J. M. Schneider,
B. A. Piot,
D. K. Maude,
O. Portugall,
G. L. J. A. Rikken
Abstract:
The electron hole asymmetry has been measured in natural graphite using magneto-optical absorption measurements. A splitting is observed for the transitions at both the $K$-point and the $H$-point of the Brillouin zone of graphite where the effect of trigonal war** vanishes. This result is fully consistent with the SWM Hamiltonian providing the free electron kinetic energy terms are taken into a…
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The electron hole asymmetry has been measured in natural graphite using magneto-optical absorption measurements. A splitting is observed for the transitions at both the $K$-point and the $H$-point of the Brillouin zone of graphite where the effect of trigonal war** vanishes. This result is fully consistent with the SWM Hamiltonian providing the free electron kinetic energy terms are taken into account. An identical electron-hole asymmetry should be present in graphene.
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Submitted 11 November, 2011;
originally announced November 2011.
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Using the de Haas-van Alphen effect to map out the closed three-dimensional Fermi surface of natural graphite
Authors:
J. M. Schneider,
B. A. Piot,
I. Sheikin,
D. K. Maude
Abstract:
The Fermi surface of graphite has been mapped out using de Haas van Alphen (dHvA) measurements at low temperature with in-situ rotation. For tilt angles $θ>60^{\circ}$ between the magnetic field and the c-axis, the majority electron and hole dHvA periods no longer follow the $\cos(θ)$ behavior demonstrating that graphite has a 3 dimensional closed Fermi surface. The Fermi surface of graphite is ac…
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The Fermi surface of graphite has been mapped out using de Haas van Alphen (dHvA) measurements at low temperature with in-situ rotation. For tilt angles $θ>60^{\circ}$ between the magnetic field and the c-axis, the majority electron and hole dHvA periods no longer follow the $\cos(θ)$ behavior demonstrating that graphite has a 3 dimensional closed Fermi surface. The Fermi surface of graphite is accurately described by highly elongated ellipsoids. A comparison with the calculated Fermi surface suggests that the SWM trigonal war** parameter $γ_3$ is significantly larger than previously thought.
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Submitted 11 November, 2011;
originally announced November 2011.
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Bottom-gated epitaxial graphene suitable for half-integer quantum metrology ?
Authors:
B. Jouault,
N. Camara,
B. Jabakhanji,
A. Caboni,
C. Consejo,
P. Godignon,
D. K. Maude,
J. Camassel
Abstract:
We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the…
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We demonstrate that the carrier concentration of epitaxial graphene devices grown on the C-face of a SiC substrate is efficiently modulated by a buried gate. The gate is fabricated via the implantation of nitrogen atoms in the SiC crystal, 200 nm below the surface, and works well at intermediate temperatures: 40K-80K. The Dirac point is observed at moderate gate voltages (1-20V) depending upon the surface preparation. For temperatures below 40K, the gate is inefficient as the buried channel is frozen out. However, the carrier concentration in graphene remains very close to the value set at T\sim 40K. The absence of parallel conduction is evidenced by the observation of the half-integer quantum Hall effect at various concentrations at T\sim 4K. These observations pave the way to a better understanding of intrinsic properties of epitaxial graphene and are promising for applications such as quantum metrology.
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Submitted 13 July, 2011; v1 submitted 29 June, 2011;
originally announced June 2011.
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High field magneto-transmission investigation of natural graphite
Authors:
N. Ubrig,
P. Plochocka,
P. Kossacki,
M. Orlita,
D. K. Maude,
O. Portugall,
G. L. J. A. Rikken
Abstract:
Magneto-transmission measurements in magnetic fields in the range B=20-60T have been performed to probe the H and K-point Landau level transitions in natural graphite. At the H-point, two series of transitions, whose energy evolves as $\sqrt{B}$ are observed. A reduced Slonczewski, Weiss and McClure (SWM) model with only two parameters to describe the intra-layer (gamma0) and inter-layer (gamma1)…
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Magneto-transmission measurements in magnetic fields in the range B=20-60T have been performed to probe the H and K-point Landau level transitions in natural graphite. At the H-point, two series of transitions, whose energy evolves as $\sqrt{B}$ are observed. A reduced Slonczewski, Weiss and McClure (SWM) model with only two parameters to describe the intra-layer (gamma0) and inter-layer (gamma1) coupling correctly describes all observed transitions. Polarization resolved measurements confirm that the observed apparent splitting of the H-point transitions at high magnetic field cannot be attributed to an asymmetry of the Dirac cone.
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Submitted 14 February, 2011;
originally announced February 2011.
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Quantum Hall states under conditions of vanishing Zeeman energy
Authors:
F. J. Teran,
M. Potemski,
D. K. Maude,
T. Andrearczyk,
J. Jaroszynski,
T. Wojtowicz,
G. Karczewski
Abstract:
We report on magneto-transport measurements of a two-dimensional electron gas confined in a Cd$_{0.997}$Mn$_{0.003}$Te quantum well structure under conditions of vanishing Zeeman energy. The electron Zeeman energy has been tuned via the $s-d$ exchange interaction in order to probe different quantum Hall states associated with metallic and insulating phases. We have observed that reducing Zeeman en…
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We report on magneto-transport measurements of a two-dimensional electron gas confined in a Cd$_{0.997}$Mn$_{0.003}$Te quantum well structure under conditions of vanishing Zeeman energy. The electron Zeeman energy has been tuned via the $s-d$ exchange interaction in order to probe different quantum Hall states associated with metallic and insulating phases. We have observed that reducing Zeeman energy to zero does not necessary imply the disappearing of quantum Hall states, i.e. a closing of the spin gap. The spin gap value under vanishing Zeeman energy conditions is shown to be dependent on the filling factor. Numerical simulations support a qualitative description of the experimental data presented in terms of a crossing or an avoided-crossing of spin split Landau levels with same orbital quantum number $N$.
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Submitted 15 October, 2010;
originally announced October 2010.
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Fractional quantum Hall effect in CdTe
Authors:
B. A. Piot,
J. Kunc,
M. Potemski,
D. K. Maude,
C. Betthausen,
A. Vogl,
D. Weiss,
G. Karczewski,
T. Wojtowicz
Abstract:
The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron g…
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The fractional quantum Hall (FQH) effect is reported in a high mobility CdTe quantum well at mK temperatures. Fully-developed FQH states are observed at filling factor 4/3 and 5/3 and are found to be both spin-polarized ground state for which the lowest energy excitation is not a spin-flip. This can be accounted for by the relatively high intrinsic Zeeman energy in this single valley 2D electron gas. FQH minima are also observed in the first excited (N=1) Landau level at filling factor 7/3 and 8/3 for intermediate temperatures.
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Submitted 4 June, 2010;
originally announced June 2010.
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Optical Probing of the Spin Polarization of the nu=5/2 Quantum Hall State
Authors:
M. Stern,
P. Plochocka,
V. Umansky,
D. K. Maude,
M. Potemski,
I. Bar-Joseph
Abstract:
We apply polarization resolved photoluminescence spectroscopy to measure the spin polarization of a two dimensional electron gas in perpendicular magnetic field. In the vicinity of filling factor nu=5/2, we observe a sharp discontinuity in the energy of the zero Landau level emission line. We find that the splitting between the two circular polarizations exhibits a sharp drop at nu=5/2 and is equa…
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We apply polarization resolved photoluminescence spectroscopy to measure the spin polarization of a two dimensional electron gas in perpendicular magnetic field. In the vicinity of filling factor nu=5/2, we observe a sharp discontinuity in the energy of the zero Landau level emission line. We find that the splitting between the two circular polarizations exhibits a sharp drop at nu=5/2 and is equal to the bare Zeeman energy, which resembles the behavior at even filling factors. We show that this behavior is consistent with filling factor nu=5/2 being unpolarized.
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Submitted 18 May, 2010;
originally announced May 2010.
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Enhancement of the spin-gap in fully occupied two-dimensional Landau levels
Authors:
J. Kunc,
K. Kowalik,
F. J. Teran,
P. Plochocka,
B. A. Piot,
D. K. Maude,
M. Potemski,
V. Kolkovsky,
G. Karczewski,
T. Wojtowicz
Abstract:
Polarization-resolved magneto-luminescence, together with simultaneous magneto-transport measurements, have been performed on a two-dimensional electron gas (2DEG) confined in CdTe quantum well in order to determine the spin-splitting of fully occupied electronic Landau levels, as a function of the magnetic field (arbitrary Landau level filling factors) and temperature. The spin splitting, extract…
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Polarization-resolved magneto-luminescence, together with simultaneous magneto-transport measurements, have been performed on a two-dimensional electron gas (2DEG) confined in CdTe quantum well in order to determine the spin-splitting of fully occupied electronic Landau levels, as a function of the magnetic field (arbitrary Landau level filling factors) and temperature. The spin splitting, extracted from the energy separation of the σ+ and σ- transitions, is composed of the ordinary Zeeman term and a many-body contribution which is shown to be driven by the spin-polarization of the 2DEG. It is argued that both these contributions result in a simple, rigid shift of Landau level ladders with opposite spins.
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Submitted 14 May, 2010;
originally announced May 2010.