Showing 1–14 of 14 results for author: Mattiazzo, S

Characterisation of analogue Monolithic Active Pixel Sensor test structures implemented in a 65 nm CMOS imaging process

Authors: Gianluca Aglieri Rinella, Giacomo Alocco, Matias Antonelli, Roberto Baccomi, Stefania Maria Beole, Mihail Bogdan Blidaru, Bent Benedikt Buttwill, Eric Buschmann, Paolo Camerini, Francesca Carnesecchi, Marielle Chartier, Yongjun Choi, Manuel Colocci, Giacomo Contin, Dominik Dannheim, Daniele De Gruttola, Manuel Del Rio Viera, Andrea Dubla, Antonello di Mauro, Maurice Calvin Donner, Gregor Hieronymus Eberwein, Jan Egger, Laura Fabbietti, Finn Feindt, Kunal Gautam , et al. (69 additional authors not shown)

Abstract: Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25… ▽ More Analogue test structures were fabricated using the Tower Partners Semiconductor Co. CMOS 65 nm ISC process. The purpose was to characterise and qualify this process and to optimise the sensor for the next generation of Monolithic Active Pixels Sensors for high-energy physics. The technology was explored in several variants which differed by: do** levels, pixel geometries and pixel pitches (10-25 $μ$m). These variants have been tested following exposure to varying levels of irradiation up to 3 MGy and $10^{16}$ 1 MeV n$_\text{eq}$ cm$^{-2}$. Here the results from prototypes that feature direct analogue output of a 4$\times$4 pixel matrix are reported, allowing the systematic and detailed study of charge collection properties. Measurements were taken both using $^{55}$Fe X-ray sources and in beam tests using minimum ionizing particles. The results not only demonstrate the feasibility of using this technology for particle detection but also serve as a reference for future applications and optimisations. △ Less

Submitted 13 March, 2024; originally announced March 2024.

Technical Design Report for the LUXE Experiment

Authors: H. Abramowicz, M. Almanza Soto, M. Altarelli, R. Aßmann, A. Athanassiadis, G. Avoni, T. Behnke, M. Benettoni, Y. Benhammou, J. Bhatt, T. Blackburn, C. Blanch, S. Bonaldo, S. Boogert, O. Borysov, M. Borysova, V. Boudry, D. Breton, R. Brinkmann, M. Bruschi, F. Burkart, K. Büßer, N. Cavanagh, F. Dal Corso, W. Decking , et al. (109 additional authors not shown)

Abstract: This Technical Design Report presents a detailed description of all aspects of the LUXE (Laser Und XFEL Experiment), an experiment that will combine the high-quality and high-energy electron beam of the European XFEL with a high-intensity laser, to explore the uncharted terrain of strong-field quantum electrodynamics characterised by both high energy and high intensity, reaching the Schwinger fiel… ▽ More This Technical Design Report presents a detailed description of all aspects of the LUXE (Laser Und XFEL Experiment), an experiment that will combine the high-quality and high-energy electron beam of the European XFEL with a high-intensity laser, to explore the uncharted terrain of strong-field quantum electrodynamics characterised by both high energy and high intensity, reaching the Schwinger field and beyond. The further implications for the search of physics beyond the Standard Model are also discussed. △ Less

Submitted 2 August, 2023; v1 submitted 1 August, 2023; originally announced August 2023.

Cherenkov Telescope Array Contributions to the 35th International Cosmic Ray Conference (ICRC2017)

Authors: F. Acero, B. S. Acharya, V. Acín Portella, C. Adams, I. Agudo, F. Aharonian, I. Al Samarai, A. Alberdi, M. Alcubierre, R. Alfaro, J. Alfaro, C. Alispach, R. Aloisio, R. Alves Batista, J. -P. Amans, E. Amato, L. Ambrogi, G. Ambrosi, M. Ambrosio, J. Anderson, M. Anduze, E. O. Angüner, E. Antolini, L. A. Antonelli, V. Antonuccio , et al. (1117 additional authors not shown)

Abstract: List of contributions from the Cherenkov Telescope Array Consortium presented at the 35th International Cosmic Ray Conference, July 12-20 2017, Busan, Korea. List of contributions from the Cherenkov Telescope Array Consortium presented at the 35th International Cosmic Ray Conference, July 12-20 2017, Busan, Korea. △ Less

Submitted 24 October, 2017; v1 submitted 11 September, 2017; originally announced September 2017.

Comments: Index of Cherenkov Telescope Array conference proceedings at the ICRC2017, Busan, Korea

Contributions of the Cherenkov Telescope Array (CTA) to the 6th International Symposium on High-Energy Gamma-Ray Astronomy (Gamma 2016)

Authors: The CTA Consortium, :, A. Abchiche, U. Abeysekara, Ó. Abril, F. Acero, B. S. Acharya, C. Adams, G. Agnetta, F. Aharonian, A. Akhperjanian, A. Albert, M. Alcubierre, J. Alfaro, R. Alfaro, A. J. Allafort, R. Aloisio, J. -P. Amans, E. Amato, L. Ambrogi, G. Ambrosi, M. Ambrosio, J. Anderson, M. Anduze, E. O. Angüner , et al. (1387 additional authors not shown)

Abstract: List of contributions from the Cherenkov Telescope Array (CTA) Consortium presented at the 6th International Symposium on High-Energy Gamma-Ray Astronomy (Gamma 2016), July 11-15, 2016, in Heidelberg, Germany. List of contributions from the Cherenkov Telescope Array (CTA) Consortium presented at the 6th International Symposium on High-Energy Gamma-Ray Astronomy (Gamma 2016), July 11-15, 2016, in Heidelberg, Germany. △ Less

Submitted 17 October, 2016; originally announced October 2016.

Comments: Index of CTA conference proceedings for the Gamma 2016, Heidelberg, Germany

CTA Contributions to the 34th International Cosmic Ray Conference (ICRC2015)

Authors: The CTA Consortium, :, A. Abchiche, U. Abeysekara, Ó. Abril, F. Acero, B. S. Acharya, M. Actis, G. Agnetta, J. A. Aguilar, F. Aharonian, A. Akhperjanian, A. Albert, M. Alcubierre, R. Alfaro, E. Aliu, A. J. Allafort, D. Allan, I. Allekotte, R. Aloisio, J. -P. Amans, E. Amato, L. Ambrogi, G. Ambrosi, M. Ambrosio , et al. (1290 additional authors not shown)

Abstract: List of contributions from the CTA Consortium presented at the 34th International Cosmic Ray Conference, 30 July - 6 August 2015, The Hague, The Netherlands. List of contributions from the CTA Consortium presented at the 34th International Cosmic Ray Conference, 30 July - 6 August 2015, The Hague, The Netherlands. △ Less

Submitted 11 September, 2015; v1 submitted 24 August, 2015; originally announced August 2015.

Comments: Index of CTA conference proceedings at the ICRC2015, The Hague (The Netherlands). v1: placeholder with no arXiv links yet, to be replaced once individual contributions have been all submitted; v2: final with arXiv links to all CTA contributions and full author list

CTA contributions to the 33rd International Cosmic Ray Conference (ICRC2013)

Authors: The CTA Consortium, :, O. Abril, B. S. Acharya, M. Actis, G. Agnetta, J. A. Aguilar, F. Aharonian, M. Ajello, A. Akhperjanian, M. Alcubierre, J. Aleksic, R. Alfaro, E. Aliu, A. J. Allafort, D. Allan, I. Allekotte, R. Aloisio, E. Amato, G. Ambrosi, M. Ambrosio, J. Anderson, E. O. Angüner, L. A. Antonelli, V. Antonuccio , et al. (1082 additional authors not shown)

Abstract: Compilation of CTA contributions to the proceedings of the 33rd International Cosmic Ray Conference (ICRC2013), which took place in 2-9 July, 2013, in Rio de Janeiro, Brazil Compilation of CTA contributions to the proceedings of the 33rd International Cosmic Ray Conference (ICRC2013), which took place in 2-9 July, 2013, in Rio de Janeiro, Brazil △ Less

Submitted 29 July, 2013; v1 submitted 8 July, 2013; originally announced July 2013.

Comments: Index of CTA conference proceedings at the ICRC2013, Rio de Janeiro (Brazil). v1: placeholder with no arXiv links yet, to be replaced once individual contributions have been all submitted. v2: final with arXiv links to all CTA contributions and full author list

Studies of Vertex Tracking with SOI Pixel Sensors for Future Lepton Colliders

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dietrich Liko, Serena Mattiazzo, Devis Pantano

Abstract: This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at… ▽ More This paper presents a study of vertex tracking with a beam hodoscope consisting of three layers of monolithic pixel sensors in SOI technology on high-resistivity substrate. We study the track extrapolation accuracy, two-track separation and vertex reconstruction accuracy in pion-Cu interactions with 150 and 300 GeV/c pions at the CERN SPS. Results are discussed in the context of vertex tracking at future lepton colliders. △ Less

Submitted 13 April, 2012; originally announced April 2012.

Comments: 15 pages, 8 figures, submitted to Nuclear Instruments and Methods A

Characterisation of a Thin Fully Depleted SOI Pixel Sensor with High Momentum Charged Particles

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano

Abstract: This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection ef… ▽ More This paper presents the results of the characterisation of a thin, fully depleted pixel sensor manufactured in SOI technology on high-resistivity substrate with high momentum charged particles. The sensor is thinned to 70 $μ$m and a thin phosphor layer contact is implanted on the back-plane. Its response is compared to that of thick sensors of same design in terms of signal and noise, detection efficiency and single point resolution based on data collected with 300 GeV pions at the CERN SPS. We observe that the charge collected and the signal-to-noise ratio scale according to the estimated thickness of the sensitive volume and the efficiency and single point resolution of the thinned chip are comparable to those measured for the thick sensors. △ Less

Submitted 6 February, 2012; originally announced February 2012.

Comments: 8 pages, 3 figures, submitted to Nucl. Instr. and Meth., section A

Characterisation of a Thin Fully-Depleted SOI Pixel Sensor with Soft X-ray Radiation

Authors: Marco Battaglia, Dario Bisello, Richard Celestre, Devis Contarato, Peter Denes, Serena Mattiazzo, Craig Tindall

Abstract: This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. This paper presents the results of the characterisation of a back-illuminated pixel sensor manufactured in Silicon-On-Insulator technology on a high-resistivity substrate with soft X-rays. The sensor is thinned and a thin Phosphor layer contact is implanted on the back-plane. The response to X-rays from 2.12 up to 8.6 keV is evaluated with fluorescence radiation at the LBNL Advanced Light Source. △ Less

Submitted 9 November, 2011; originally announced November 2011.

Comments: 9 pages, 5 figures, submitted to Nuclear Instruments and Methods A

Characterisation of a Pixel Sensor in 0.20 micron SOI Technology for Charged Particle Tracking

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Serena Mattiazzo, Devis Pantano, Sarah Zalusky

Abstract: This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single poi… ▽ More This paper presents the results of the characterisation of a pixel sensor manufactured in OKI 0.2 micron SOI technology integrated on a high-resistivity substrate, and featuring several pixel cell layouts for charge collection optimisation. The sensor is tested with short IR laser pulses, X-rays and 200 GeV pions. We report results on charge collection, particle detection efficiency and single point resolution. △ Less

Submitted 4 March, 2011; originally announced March 2011.

Comments: 15 pages, 11 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nuclear Inst. and Methods in Physics Research, A 650 (2011), pp. 55-58

Monolithic Pixel Sensors in Deep-Submicron SOI Technology

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Qu Vu

Abstract: Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched… ▽ More Monolithic pixel sensors for charged particle detection and imaging applications have been designed and fabricated using commercially available, deep-submicron Silicon-On-Insulator (SOI) processes, which insulate a thin layer of integrated full CMOS electronics from a high-resistivity substrate by means of a buried oxide. The substrate is contacted from the electronics layer through vias etched in the buried oxide, allowing pixel implanting and reverse biasing. This paper summarizes the performances achieved with a first prototype manufactured in the OKI 0.15 micrometer FD-SOI process, featuring analog and digital pixels on a 10 micrometer pitch. The design and preliminary results on the analog section of a second prototype manufactured in the OKI 0.20 micrometer FD-SOI process are briefly discussed. △ Less

Submitted 18 March, 2009; originally announced March 2009.

Comments: Proceedings of the PIXEL 2008 International Workshop, FNAL, Batavia, IL, 23-26 September 2008. Submitted to JINST - Journal of Instrumentation

Journal ref: JINST 4:P04007,2009

Monolithic Pixel Sensors in Deep-Submicron SOI Technology with Analog and Digital Pixels

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay Glesener, Serena Mattiazzo, Chinh Vu

Abstract: This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics l… ▽ More This paper presents the design and test results of a prototype monolithic pixel sensor manufactured in deep-submicron fully-depleted Silicon-On-Insulator (SOI) CMOS technology. In the SOI technology, a thin layer of integrated electronics is insulated from a (high-resistivity) silicon substrate by a buried oxide. Vias etched through the oxide allow to contact the substrate from the electronics layer, so that pixel implants can be created and a reverse bias can be applied. The prototype chip, manufactured in OKI 0.15 micron SOI process, features both analog and digital pixels on a 10 micron pitch. Results of tests performed with infrared laser and 1.35 GeV electrons and a first assessment of the effect of ionising and non-ionising doses are discussed. △ Less

Submitted 27 November, 2008; originally announced November 2008.

Comments: 5 pages, 7 figures, submitted to Nuclear Instruments and Methods A

Journal ref: Nucl.Instrum.Meth.A604:380-384,2009

A Rad-hard CMOS Active Pixel Sensor for Electron Microscopy

Authors: Marco Battaglia, Devis Contarato, Peter Denes, Dionisio Doering, Piero Giubilato, Tae Sung Kim, Serena Mattiazzo, Velimir Radmilovic, Sarah Zalusky

Abstract: Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictio… ▽ More Monolithic CMOS pixel sensors offer unprecedented opportunities for fast nano-imaging through direct electron detection in transmission electron microscopy. We present the design and a full characterisation of a CMOS pixel test structure able to withstand doses in excess of 1 MRad. Data collected with electron beams at various energies of interest in electron microscopy are compared to predictions of simulation and to 1.5 GeV electron data to disentagle the effect of multiple scattering. The point spread function measured with 300 keV electrons is (8.1 +/- 1.6) micron for 10 micron pixel and (10.9 +/- 2.3) micron for 20 micron pixels, respectively, which agrees well with the values of 8.4 micron and 10.5 micron predicted by our simulation. △ Less

Submitted 17 November, 2008; originally announced November 2008.

Comments: 16 pages, 9 figures, submitted to Nucl. Instr and Meth A

Journal ref: Nucl.Instrum.Meth.A598:642-649,2009

A Sensor with Analog and Digital Pixels in 0.15 micron SOI Technology

Authors: Marco Battaglia, Dario Bisello, Devis Contarato, Peter Denes, Piero Giubilato, Lindsay E. Glesener, Serena Mattiazzo, Chinh Vu

Abstract: A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. T… ▽ More A monolithic pixel sensor in deep-submicron Silicon-On-Insulator (SOI) CMOS technology has been designed, manufactured and characterised. This technology is of significant interest for applications in particle tracking and imaging. The prototype chip features pixels of 10 micron pitch arrayed in two analog sections and one digital section with a comparator and a latch integrated in each pixel. The prototype response has been tested with infrared lasers and with the 1.35 GeV electron beam extracted from the injection booster at the LBNL Advanced Light Source. Results from irradiation tests with low energy protons and neutrons performed at the LBNL 88-inch Cyclotron are also presented. △ Less

Submitted 30 June, 2008; originally announced July 2008.

Comments: 5 pages, 11 figures, contributed to the SORMA 08 Conference, to appear on IEEE Transactions on Nuclear Physics