Can User-Centered Reinforcement Learning Allow a Robot to Attract Passersby without Causing Discomfort?
Authors:
Yasunori Ozaki,
Tatsuya Ishihara,
Narimune Matsumura,
Tadashi Nunobiki
Abstract:
The aim of our study was to develop a method by which a social robot can greet passersby and get their attention without causing them to suffer discomfort.A number of customer services have recently come to be provided by social robots rather than people, including, serving as receptionists, guides, and exhibitors. Robot exhibitors, for example, can explain products being promoted by the robot own…
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The aim of our study was to develop a method by which a social robot can greet passersby and get their attention without causing them to suffer discomfort.A number of customer services have recently come to be provided by social robots rather than people, including, serving as receptionists, guides, and exhibitors. Robot exhibitors, for example, can explain products being promoted by the robot owners. However, a sudden greeting by a robot can startle passersby and cause discomfort to passersby.Social robots should thus adapt their mannerisms to the situation they face regarding passersby.We developed a method for meeting this requirement on the basis of the results of related work. Our proposed method, user-centered reinforcement learning, enables robots to greet passersby and get their attention without causing them to suffer discomfort (p<0.01) .The results of an experiment in the field, an office entrance, demonstrated that our method meets this requirement.
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Submitted 1 January, 2020; v1 submitted 14 March, 2019;
originally announced March 2019.
Anisotropic lattice deformation of InAs self-assembled quantum dots embedded in GaNAs strain compensating layers
Authors:
Naoki Matsumura,
Shunichi Muto,
Sasilaka Ganapathy,
Ikuo Suemune,
Ken Numata,
Konami Yabuta
Abstract:
Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along t…
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Lattice deformations of InAs self-assembled quantum dots, which were grown on (001) GaAs substrates and embedded in GaNAs strain compensating layers (SCLs), were examined with an ion-channeling method in Rutherford backscattering spectrometry. The channeling experiments demonstrated that the increase of the nitrogen concentrations in the GaNAs SCLs caused the indium lattice displacements along the [001] growth direction while those parallel to the (001) crystal plane were kept unchanged
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Submitted 28 December, 2004;
originally announced December 2004.