Development of the X-ray polarimeter using CMOS imager: polarization sensitivity of a $1.5~{\rm μm}$ pixel CMOS sensor
Authors:
Toshiya Iwata,
Kouichi Hagino,
Hirokazu Odaka,
Tsubasa Tamba,
Masahiro Ichihashi,
Tatsuaki Kato,
Kota Ishiwata,
Haruki Kuramoto,
Hiroumi Matsuhashi,
Shota Arai,
Takahiro Minami,
Satoshi Takashima,
Aya Bamba
Abstract:
We are develo** an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of $10$$\unicode{x2013}$$30~\mathrm{keV}$. A successful proof-of-concept experiment was conducted using a fine-pixel CMOS sensor with a $2.5~\mathrm{μm}$ pixel size. In this study, we conducted beam ex…
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We are develo** an imaging polarimeter by combining a fine-pixel CMOS image sensor with a coded aperture mask as part of the cipher project, aiming to achieve X-ray polarimetry in the energy range of $10$$\unicode{x2013}$$30~\mathrm{keV}$. A successful proof-of-concept experiment was conducted using a fine-pixel CMOS sensor with a $2.5~\mathrm{μm}$ pixel size. In this study, we conducted beam experiments to assess the modulation factor (MF) of the CMOS sensor with a $1.5~\mathrm{μm}$ pixel size manufactured by Canon and to determine if there was any improvement in the MF. The measured MF was $8.32\% \pm 0.34\%$ at $10~\mathrm{keV}$ and $16.10\% \pm 0.68\%$ at $22~\mathrm{keV}$, exceeding those of the $2.5~\mathrm{μm}$ sensor in the $6$$\unicode{x2013}$$22~\mathrm{keV}$ range. We also evaluated the quantum efficiency of the sensor, inferring a detection layer thickness of $2.67 \pm 0.48~{\rm μm}$. To develop a more sensitive polarimeter, a sensor with a thicker detection layer, smaller pixel size, and reduced thermal diffusion effect is desirable.
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Submitted 29 May, 2024;
originally announced May 2024.
Evaluation of the X-ray SOI pixel detector with the on-chip ADC
Authors:
Hiroumi Matsuhashi,
Kouichi Hagino,
Aya Bamba,
Ayaki Takeda,
Masataka Yukumoto,
Koji Mori,
Yusuke Nishioka,
Takeshi Go Tsuru,
Mizuki Uenomachi,
Tomonori Ikeda,
Masamune Matsuda,
Takuto Narita,
Hiromasa Suzuki,
Takaaki Tanaka,
Ikuo Kurachi,
Takayoshi Kohmura,
Yusuke Uchida,
Yasuo Arai,
Shoji Kawahito
Abstract:
XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must…
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XRPIX is the monolithic X-ray SOI (silicon-on-insulator) pixel detector, which has a time resolution better than 10 $\rmμ$s as well as a high detection efficiency for X-rays above 10 keV. XRPIX is planned to be installed on future X-ray satellites. To mount on satellites, it is essential that the ADC (analog-to-digital converter) be implemented on the detector because such peripheral circuits must be as compact as possible to achieve a large imaging area in the limited space in satellites. Thus, we developed a new XRPIX device with the on-chip ADC, and evaluated its performances. As the results, the integral non-linearity was evaluated to be 6 LSB (least significant bit), equivalent to 36 eV. The differential non-linearity was less than 0.7 LSB, and input noise from the on-chip ADC was 5~$\rm{e^{-}}$. Also, we evaluated end-to-end performance including the sensor part as well as the on-chip ADC. As the results, energy resolution at 5.9 keV was 294 $\rm{\pm}$ 4 eV in full-width at half maximum for the best pixel.
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Submitted 10 May, 2024; v1 submitted 9 May, 2024;
originally announced May 2024.
