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Emergence of highly coherent quantum subsystems of a noisy and dense spin system
Authors:
A. Beckert,
M. Grimm,
N. Wili,
R. Tschaggelar,
G. Jeschke,
G. Matmon,
S. Gerber,
M. Müller,
G. Aeppli
Abstract:
Quantum sensors and qubits are usually two-level systems (TLS), the quantum analogs of classical bits which assume binary values '0' or '1'. They are useful to the extent to which they can persist in quantum superpositions of '0' and '1' in real environments. However, such TLS are never alone in real materials and devices, and couplings to other degrees of freedom limit the lifetimes - called deco…
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Quantum sensors and qubits are usually two-level systems (TLS), the quantum analogs of classical bits which assume binary values '0' or '1'. They are useful to the extent to which they can persist in quantum superpositions of '0' and '1' in real environments. However, such TLS are never alone in real materials and devices, and couplings to other degrees of freedom limit the lifetimes - called decoherence times - of the superposition states. Decoherence occurs via two major routes - excitation hop** and fluctuating electromagnetic fields. Common mitigation strategies are based on material improvements, exploitation of clock states which couple only to second rather than first order to external perturbations, and reduction of interactions via extreme dilution of pure materials made from isotopes selected to minimize noise from nuclear spins. We demonstrate that for a dense TLS network in a noisy nuclear spin bath, we can take advantage of interactions to pass from hop** to fluctuation dominance, increasing decoherence times by almost three orders of magnitude. In the dilute rare-earth insulator LiY1-xTbxF4, Tb ions realize TLS characterized by a 30GHz splitting and readily implemented clock states. Dipolar interactions lead to coherent, localized pairs of Tb ions, that decohere due to fluctuating quantum mechanical ring-exchange interaction, sensing the slow dynamics of the surrounding, nearly localized Tb spins. The hop** and fluctuation regimes are sharply distinguished by their Rabi oscillations and the invisible vs. strong effect of classic 'error correcting' microwave pulse sequences. Laying open the decoherence mechanisms at play in a dense, disordered and noisy network of interacting TLS, our work expands the search space for quantum sensors and qubits to include clusters in dense, disordered materials, that can be explored for localization effects.
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Submitted 17 January, 2024; v1 submitted 3 October, 2022;
originally announced October 2022.
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Non-destructive X-ray imaging of patterned delta-layer devices in silicon
Authors:
Nicolò D'Anna,
Dario Ferreira Sanchez,
Guy Matmon,
Jamie Bragg,
Procopios C. Constantinou,
Taylor J. Z. Stock,
Sarah Fearn,
Steven R. Schofield,
Neil J. Curson,
Marek Bartkowiak,
Y. Soh,
Daniel Grolimund,
Simon Gerber,
Gabriel Aeppli
Abstract:
The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for b…
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The progress of miniaturisation in integrated electronics has led to atomic and nanometre-sized dopant devices in silicon. Such structures can be fabricated routinely by hydrogen resist lithography, using various dopants such as phosphorous and arsenic. However, the ability to non-destructively obtain atomic-species-specific images of the final structure, which would be an indispensable tool for building more complex nano-scale devices, such as quantum co-processors, remains an unresolved challenge. Here we exploit X-ray fluorescence to create an element-specific image of As dopants in silicon, with dopant densities in absolute units and a resolution limited by the beam focal size (here $\sim1~μ$m), without affecting the device's low temperature electronic properties. The As densities provided by the X-ray data are compared to those derived from Hall effect measurements as well as the standard non-repeatable, scanning tunnelling microscopy and secondary ion mass spectroscopy, techniques. Before and after the X-ray experiments, we also measured the magneto-conductance, dominated by weak localisation, a quantum interference effect extremely sensitive to sample dimensions and disorder. Notwithstanding the $1.5\times10^{10}$ Sv ($1.5\times10^{16}$ Rad/cm$^{-2}$) exposure of the device to X-rays, all transport data were unchanged to within experimental errors, corresponding to upper bounds of 0.2 Angstroms for the radiation-induced motion of the typical As atom and 3$\%$ for the loss of activated, carrier-contributing dopants. With next generation synchrotron radiation sources and more advanced optics, we foresee that it will be possible to obtain X-ray images of single dopant atoms within resolved radii of 5 nm.
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Submitted 14 April, 2023; v1 submitted 19 August, 2022;
originally announced August 2022.
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Precise determination of low energy electronuclear Hamiltonian for LiY$_{1-x}$Ho$_{x}$F$_{4}$
Authors:
A. Beckert,
R. I. Hermans,
M. Grimm,
J. R. Freeman,
E. H. Linfield,
A. G. Davies,
M. Müller,
H. Sigg,
S. Gerber,
G. Matmon,
G. Aeppli
Abstract:
We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly sp…
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We use complementary optical spectroscopy methods to directly measure the lowest crystal-field energies of the rare-earth quantum magnet LiY$_{1-x}$Ho$_{x}$F$_{4}$, including their hyperfine splittings, with more than 10 times higher resolution than previous work. We are able to observe energy level splittings due to the $^6\mathrm{Li}$ and $^7\mathrm{Li}$ isotopes, as well as non-equidistantly spaced hyperfine transitions originating from dipolar and quadrupolar hyperfine interactions. We provide refined crystal field parameters and extract the dipolar and quadrupolar hyperfine constants ${A_J=0.02703\pm0.00003}$ $\textrm{cm}^{-1}$ and ${B= 0.04 \pm0.01}$ $\textrm{cm}^{-1}$, respectively. Thereupon we determine all crystal-field energy levels and magnetic moments of the $^5I_8$ ground state manifold, including the (non-linear) hyperfine corrections. The latter match the measurement-based estimates. The scale of the non-linear hyperfine corrections sets an upper bound for the inhomogeneous line widths that would still allow for unique addressing of a selected hyperfine transition. e.g. for quantum information applications. Additionally, we establish the far-infrared, low-temperature refractive index of LiY$_{1-x}$Ho$_{x}$F$_{4}$.
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Submitted 16 December, 2020;
originally announced December 2020.
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Metrology of Complex Refractive Index for Solids in the Terahertz Regime Using Frequency Domain Spectroscopy
Authors:
Steven Chick,
Ben Murdin,
Guy Matmon,
Mira Naftaly
Abstract:
Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in other bands enables metrological comparison between competing techniques. We advance a method for extracting the optical properties of high-index solids using only transmission-mode frequency domain spectroscopy of plane…
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Frequency domain spectroscopy allows an experimenter to establish optical properties of solids in a wide frequency band including the technically challenging 10 THz region, and in other bands enables metrological comparison between competing techniques. We advance a method for extracting the optical properties of high-index solids using only transmission-mode frequency domain spectroscopy of plane-parallel Fabry-Perot optical flats. We show that different data processing techniques yield different kinds of systematic error, and that some commonly used techniques have inherent systematic errors which are underappreciated. We use model datasets to cross-compare algorithms in isolation from experimental errors, and propose a new algorithm which has qualitatively different systematic errors to its competitors. We show that our proposal is more robust to experimental non-idealities such as noise or apodization, and extract the complex refractive index spectrum of crystalline silicon as a practical example. Finally, we advance the idea that algorithms are complementary rather than competitive, and should be used together as part of a toolbox for better metrology.
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Submitted 20 September, 2018; v1 submitted 9 May, 2018;
originally announced May 2018.
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2D-3D crossover in a dense electron liquid in silicon
Authors:
Guy Matmon,
Eran Ginossar,
Byron J. Villis,
Alex Kölker,
Tingbin Lim,
Hari Solanki,
Steven R. Schofield,
Neil J. Curson,
Juerong Li,
Ben N. Murdin,
Andrew J. Fisher,
Gabriel Aeppli
Abstract:
Do** of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$)…
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Do** of silicon via phosphene exposures alternating with molecular beam epitaxy overgrowth is a path to Si:P substrates for conventional microelectronics and quantum information technologies. The technique also provides a new and well-controlled material for systematic studies of two-dimensional lattices with a half-filled band. We show here that for a dense ($n_s=2.8\times 10^{14}$\,cm$^{-2}$) disordered two-dimensional array of P atoms, the full field angle-dependent magnetostransport is remarkably well described by classic weak localization theory with no corrections due to interaction effects. The two- to three-dimensional cross-over seen upon warming can also be interpreted using scaling concepts, developed for anistropic three-dimensional materials, which work remarkably except when the applied fields are nearly parallel to the conducting planes.
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Submitted 15 February, 2018; v1 submitted 14 February, 2018;
originally announced February 2018.