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Formation and Microwave Losses of Hydrides in Superconducting Niobium Thin Films Resulting from Fluoride Chemical Processing
Authors:
Carlos G. Torres-Castanedo,
Dominic P. Goronzy,
Thang Pham,
Anthony McFadden,
Nicholas Materise,
Paul Masih Das,
Matthew Cheng,
Dmitry Lebedev,
Stephanie M. Ribet,
Mitchell J. Walker,
David A. Garcia-Wetten,
Cameron J. Kopas,
Jayss Marshall,
Ella Lachman,
Nikolay Zhelev,
James A. Sauls,
Joshua Y. Mutus,
Corey Rae H. McRae,
Vinayak P. Dravid,
Michael J. Bedzyk,
Mark C. Hersam
Abstract:
Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potenti…
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Superconducting Nb thin films have recently attracted significant attention due to their utility for quantum information technologies. In the processing of Nb thin films, fluoride-based chemical etchants are commonly used to remove surface oxides that are known to affect superconducting quantum devices adversely. However, these same etchants can also introduce hydrogen to form Nb hydrides, potentially negatively impacting microwave loss performance. Here, we present comprehensive materials characterization of Nb hydrides formed in Nb thin films as a function of fluoride chemical treatments. In particular, secondary-ion mass spectrometry, X-ray scattering, and transmission electron microscopy reveal the spatial distribution and phase transformation of Nb hydrides. The rate of hydride formation is determined by the fluoride solution acidity and the etch rate of Nb2O5, which acts as a diffusion barrier for hydrogen into Nb. The resulting Nb hydrides are detrimental to Nb superconducting properties and lead to increased power-independent microwave loss in coplanar waveguide resonators. However, Nb hydrides do not correlate with two-level system loss or device aging mechanisms. Overall, this work provides insight into the formation of Nb hydrides and their role in microwave loss, thus guiding ongoing efforts to maximize coherence time in superconducting quantum devices.
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Submitted 5 April, 2024;
originally announced April 2024.
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Grain size in low loss superconducting Ta thin films on c-axis sapphire
Authors:
Sarah Garcia Jones,
Nicholas Materise,
Ka Wun Leung,
Brian D. Isakov,
Xi Chen,
Jiangchang Zheng,
Andras Gyenis,
Berthold Jaeck,
Corey Rae H. McRae
Abstract:
In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size e…
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In recent years, the implementation of thin-film Ta has led to improved coherence times in superconducting circuits. Efforts to further optimize this materials set have become a focus of the subfield of materials for superconducting quantum computing. It has been previously hypothesized that grain size could be correlated with device performance. In this work, we perform a comparative grain size experiment with $α$-Ta on $c$-axis sapphire. Our evaluation methods include both room-temperature chemical and structural characterization and cryogenic microwave measurements, and we report no statistical difference in device performance between small- and larger-grain-size devices with grain sizes of 924 nm$^2$ and 1700 nm$^2$, respectively. These findings suggest that grain size is not correlated with loss in the parameter regime of interest for Ta grown on c-axis sapphire, narrowing the parameter space for optimization of this materials set.
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Submitted 25 July, 2023; v1 submitted 21 July, 2023;
originally announced July 2023.
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Tunable Capacitor For Superconducting Qubits Using an InAs/InGaAs Heterostructure
Authors:
Nicholas Materise,
Matthieu C. Dartiailh,
William M. Strickland,
Javad Shabani,
Eliot Kapit
Abstract:
Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heter…
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Adoption of fast, parametric coupling elements has improved the performance of superconducting qubits, enabling recent demonstrations of quantum advantage in randomized sampling problems. The development of low loss, high contrast couplers is critical for scaling up these systems. We present a blueprint for a gate-tunable coupler realized with a two-dimensional electron gas in an InAs/InGaAs heterostructure. Rigorous numerical simulations of the semiconductor and high frequency electromagnetic behavior of the coupler and microwave circuitry yield an on/off ratio of more than one order of magnitude. We give an estimate of the dielectric-limited loss from the inclusion of the coupler in a two qubit system, with coupler coherences ranging from a few to tens of microseconds.
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Submitted 12 July, 2023; v1 submitted 8 December, 2022;
originally announced December 2022.
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An Introduction to Superconducting Qubits and Circuit Quantum Electrodynamics
Authors:
Nicholas Materise
Abstract:
A subset of the concepts of circuit quantum electrodynamics are reviewed as a reference to the Axion Dark Matter Experiment (ADMX) community as part of the proceedings of the 2nd Workshop on Microwave Cavities and Detectors for Axion Research. The classical Lagrangians and Hamiltonians for an LC circuit are discussed along with black box circuit quantization methods for a weakly anharmonic qubit c…
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A subset of the concepts of circuit quantum electrodynamics are reviewed as a reference to the Axion Dark Matter Experiment (ADMX) community as part of the proceedings of the 2nd Workshop on Microwave Cavities and Detectors for Axion Research. The classical Lagrangians and Hamiltonians for an LC circuit are discussed along with black box circuit quantization methods for a weakly anharmonic qubit coupled to a resonator or cavity.
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Submitted 19 August, 2017;
originally announced August 2017.
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High-Kinetic Inductance Additive Manufactured Superconducting Microwave Cavity
Authors:
Eric T. Holland,
Yaniv J. Rosen,
Nicholas Materise,
Nathan Woollett,
Thomas Voisin,
Y. Morris Wang,
Jorge Mireles,
Gianpaolo Carosi,
Jonathan L DuBois
Abstract:
Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing', opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of th…
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Investigations into the microwave surface impedance of superconducting resonators have led to the development of single photon counters that rely on kinetic inductance for their operation. While concurrent progress in additive manufacturing, `3D printing', opens up a previously inaccessible design space for waveguide resonators. In this manuscript, we present results from the first synthesis of these two technologies in a titanium, aluminum, vanadium (Ti-6Al-4V) superconducting radio frequency resonator which exploits a design unattainable through conventional fabrication means. We find that Ti-6Al-4V has two distinct superconducting transition temperatures observable in heat capacity measurements. The higher transition temperature is in agreement with DC resistance measurements. While the lower transition temperature, not previously known in literature, is consistent with the observed temperature dependence of the superconducting microwave surface impedance. From the surface reactance, we extract a London penetration depth of $8\pm3μ$m - roughly an order of magnitude larger than other titanium alloys and several orders of magnitude larger than other conventional elemental superconductors. This large London penetration depth suggests that Ti-6Al-4V may be a suitable material for high kinetic inductance applications such as single photon counting or parametric amplification used in quantum computing.
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Submitted 14 August, 2017;
originally announced August 2017.
