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Optically coherent nitrogen-vacancy defect centers in diamond nanostructures
Authors:
Laura Orphal-Kobin,
Kilian Unterguggenberger,
Tommaso Pregnolato,
Natalia Kemf,
Matthias Matalla,
Ralph-Stephan Unger,
Ina Ostermay,
Gregor Pieplow,
Tim Schröder
Abstract:
Optically active solid-state spin defects have the potential to become a versatile resource for quantum information processing applications. Nitrogen-vacancy defect centers (NV) in diamond act as quantum memories and can be interfaced by coherent photons as demonstrated in entanglement protocols. However, in particular in diamond nanostructures, the effect of spectral diffusion leads to optical de…
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Optically active solid-state spin defects have the potential to become a versatile resource for quantum information processing applications. Nitrogen-vacancy defect centers (NV) in diamond act as quantum memories and can be interfaced by coherent photons as demonstrated in entanglement protocols. However, in particular in diamond nanostructures, the effect of spectral diffusion leads to optical decoherence hindering entanglement generation. In this work, we present strategies to significantly reduce the electric noise in diamond nanostructures. We demonstrate single NVs in nanopillars exhibiting lifetime-limited linewidth on the time scale of one second and long-term spectral stability with inhomogeneous linewidth as low as 150 MHz over three minutes. Excitation power and energy-dependent measurements in combination with nanoscopic Monte Carlo simulations contribute to a better understanding of the impact of bulk and surface defects on the NV's spectral properties. Finally, we propose an entanglement protocol for nanostructure-coupled NVs providing entanglement generation rates up to hundreds of kHz.
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Submitted 10 March, 2022;
originally announced March 2022.
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Diameter evolution of selective area grown Ga-assisted GaAs nanowires
Authors:
Hanno Küpers,
Ryan B. Lewis,
Abbes Tahraoui,
Mathias Matalla,
Olaf Krüger,
Faebian Bastiman,
Henning Riechert,
Lutz Geelhaar
Abstract:
We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are optimized for the nucleation of vertically-oriented NWs. In the second step, the growth parameters are chosen to optimize the NW shape, allowing NWs with a thin…
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We present a novel two-step approach for the selective area growth (SAG) of GaAs nanowires (NWs) by molecular beam epitaxy which has enabled a detailed exploration of the NW diameter evolution. In the first step, the growth parameters are optimized for the nucleation of vertically-oriented NWs. In the second step, the growth parameters are chosen to optimize the NW shape, allowing NWs with a thin diameter (45 nm) and an untapered morphology to be realized. This result is in contrast to the commonly observed thick, inversely tapered shape of SAG NWs. We quantify the flux dependence of radial vapour-solid (VS) growth and build a model that takes into account diffusion on the NW sidewalls to explain the observed VS growth rates. Combining this model for the radial VS growth with an existing model for the droplet dynamics at the NW top, we achieve full understanding of the diameter of NWs over their entire length and the evolution of the diameter and tapering during growth. We conclude that only the combination of droplet dynamics and VS growth results in an untapered morphology. This result enables NW shape engineering and has important implications for do** of NWs.
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Submitted 18 August, 2017;
originally announced August 2017.
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Surface preparation and patterning by nano imprint lithography for the selective area growth of GaAs nanowires on Si(111)
Authors:
Hanno Küpers,
Abbes Tahraoui,
Ryan B. Lewis,
Sander Rauwerdink,
Mathias Matalla,
Olaf Krüger,
Faebian Bastiman,
Henning Riechert,
Lutz Geelhaar
Abstract:
The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterne…
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The selective area growth of Ga-assisted GaAs nanowires (NWs) with a high vertical yield on Si(111) substrates is still challenging. Here, we explore different surface preparations and their impact on NW growth by molecular beam epitaxy. We show that boiling the substrate in ultrapure water leads to a significant improvement in the vertical yield of NWs (realizing 80%) grown on substrates patterned by electron-beam lithography (EBL). Tentatively, we attribute this improvement to a reduction in atomic roughness of the substrate in the mask opening. On this basis, we transfer our growth results to substrates processed by a technique that enables the efficient patterning of large arrays, nano imprint lithography (NIL). In order to obtain hole sizes below 50 nm, we combine the conventional NIL process with an indirect pattern transfer (NIL-IPT) technique. Thereby, we achieve smaller hole sizes than previously reported for conventional NIL and growth results that are comparable to those achieved on EBL patterned substrates.
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Submitted 8 August, 2017;
originally announced August 2017.
