Showing 1–11 of 11 results for author: Masutomi, R

Effect of Parallel Magnetic Field on Superconductivity of Ultrathin Metal Films Grown on a Cleaved GaAs Surface

Authors: Takayuki Sekihara, Takahiro Miyake, Ryuichi Masutomi, Tohru Okamoto

Abstract: The parallel-magnetic-field $H_\parallel$ dependence of the superconducting transition temperature $T_c$ is studied for ultrathin films of In, Bi, and Al grown on GaAs(110). In the case of In films in the monolayer regime, $T_c$ exhibits a quadratic-like $H_\parallel$ dependence, which is one order of magnitude stronger than that previously observed in monolayer Pb films by the present authors [Ph… ▽ More The parallel-magnetic-field $H_\parallel$ dependence of the superconducting transition temperature $T_c$ is studied for ultrathin films of In, Bi, and Al grown on GaAs(110). In the case of In films in the monolayer regime, $T_c$ exhibits a quadratic-like $H_\parallel$ dependence, which is one order of magnitude stronger than that previously observed in monolayer Pb films by the present authors [Phys. Rev. Lett. 111, 057005 (2013)]. The results are well reproduced by a model developed for an inhomogeneous two-dimensional superconducting state in the presence of a moderate Rashba spin-orbit interaction. The Rashba spin splitting is estimated to be 0.04 eV, which is much smaller than that expected for monolayer Pb films. In a few-monolayer Bi film, the suppression of $T_c$ with increasing $H_\parallel$ is comparable to that in monolayer Pb films. On the other hand, much stronger suppression, which is attributed to the Pauli paramagnetic effect, was observed for the Al film. △ Less

Submitted 23 October, 2017; originally announced October 2017.

Comments: 5 pages, 7 figures

Journal ref: J. Phys. Soc. Jpn. 84, 064710 (2015)

Magnetic-Field-Induced Superconductivity in Ultrathin Pb Films with Magnetic Impurities

Authors: Masato Niwata, Ryuichi Masutomi, Tohru Okamoto

Abstract: It is well known that external magnetic fields and magnetic moments of impurities both suppress superconductivity. Here, we demonstrate that their combined effect enhances the superconductivity of a few atomic layer thick Pb films grown on a cleaved GaAs(110) surface. A Ce-doped film, where superconductivity is totally suppressed at zero-field, actually turns superconducting when an external magne… ▽ More It is well known that external magnetic fields and magnetic moments of impurities both suppress superconductivity. Here, we demonstrate that their combined effect enhances the superconductivity of a few atomic layer thick Pb films grown on a cleaved GaAs(110) surface. A Ce-doped film, where superconductivity is totally suppressed at zero-field, actually turns superconducting when an external magnetic field is applied parallel to the conducting plane. For films with Mn adatoms, the screening of the magnetic moment by conduction electrons, i.e., the Kondo singlet formation, becomes important. We found that the degree of screening can be reduced by cap** the Pb film with a Au layer, and observed the positive magnetic field dependence of the superconducting transition temperature. △ Less

Submitted 18 December, 2017; v1 submitted 23 October, 2017; originally announced October 2017.

Comments: 5+2 pages, 3+5 figures

Journal ref: Phys. Rev. Lett. 119, 257001 (2017)

In-plane magnetic field dependence of cyclotron relaxation time in a Si two-dimensional electron system

Authors: Tasuku Chiba, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

Abstract: Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexp… ▽ More Cyclotron resonance of two-dimensional electrons is studied for a high-mobility Si/SiGe quantum well in the presence of an in-plane magnetic field, which induces spin polarization. The relaxation time $τ_{CR}$ shows a negative in-plane magnetic field dependence, which is similar to that of the transport scattering time $τ_t$ obtained from dc resistivity. The resonance magnetic field shows an unexpected negative shift with increasing in-plane magnetic field. △ Less

Submitted 10 July, 2013; originally announced July 2013.

Comments: 3 pages, 3 figures

Journal ref: Phys. Rev. B 86, 045310 (2012)

Two-dimensional superconducting state of monolayer Pb films grown on GaAs(110) in a strong parallel magnetic field

Authors: Takayuki Sekihara, Ryuichi Masutomi, Tohru Okamoto

Abstract: Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is al… ▽ More Two dimensional (2D) superconductivity was studied by magnetotransport measurements on single-atomic-layer Pb films on a cleaved GaAs(110) surface. The superconducting transition temperature shows only a weak dependence on the parallel magnetic field up to 14 T, which is higher than the Pauli paramagnetic limit. Furthermore, the perpendicular magnetic field dependence of the sheet resistance is almost independent of the presence of the parallel field component. These results are explained in terms of an inhomogeneous superconducting state predicted for 2D metals with a large Rashba spin splitting. △ Less

Submitted 2 August, 2013; v1 submitted 10 July, 2013; originally announced July 2013.

Comments: 5 pages, 4 figures

Journal ref: Phys. Rev. Lett. 111, 057005 (2013)

Metallic Behavior of Cyclotron Relaxation Time in Two-Dimensional Systems

Authors: Ryuichi Masutomi, Kohei Sasaki, Ippei Yasuda, Akihito Sekine, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

Abstract: Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K… ▽ More Cyclotron resonance of two-dimensional electrons is studied at low temperatures down to 0.4 K for a high-mobility Si/SiGe quantum well which exhibits a metallic temperature dependence of dc resistivity $ρ$. The relaxation time $τ_{\rm CR}$ shows a negative temperature dependence, which is similar to that of the transport scattering time $τ_t$ obtained from $ρ$. The ratio $τ_{\rm CR}/τ_t$ at 0.4 K increases as the electron density $N_s$ decreases, and exceeds unity when $N_s$ approaches the critical density for the metal-insulator transition. △ Less

Submitted 24 May, 2011; originally announced May 2011.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 106, 196404 (2011)

Optical Hall Effect in the Integer Quantum Hall Regime

Authors: Yohei Ikebe, Takahiro Morimoto, Ryuichi Masutomi, Tohru Okamoto, Hideo Aoki, Ryo Shimano

Abstract: Optical Hall conductivity $σ_{xy}(ω)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling $ν=2$. The result, which fits wit… ▽ More Optical Hall conductivity $σ_{xy}(ω)$ is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle ($\sim$ fine structure constant $\sim$ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling $ν=2$. The result, which fits with the behavior expected from the carrier localization effect in the ac regime, indicates that the plateau structure, although not quantized, still exists in the terahertz regime. △ Less

Submitted 24 June, 2010; v1 submitted 2 April, 2010; originally announced April 2010.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. Lett. 104, 256802 (2010)

Well-width dependence of valley splitting in Si/SiGe quantum wells

Authors: Kohei Sasaki, Ryuichi Masutomi, Kiyohiko Toyama, Kentarou Sawano, Yasuhiro Shiraki, Tohru Okamoto

Abstract: The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the… ▽ More The valley splitting in Si two-dimensional electron systems is studied using Si/SiGe single quantum wells (QWs) with different well widths. The energy gaps for 4 and 5.3 nm QWs, obtained from the temperature dependence of the longitudinal resistivity at the Landau level filling factor $ν=1$, are much larger than those for 10 and 20 nm QWs. This is consistent with the well-width dependence of the bare valley splitting estimated from the comparison with the Zeeman splitting in the Shubnikov-de Haas oscillations. △ Less

Submitted 3 December, 2009; v1 submitted 10 November, 2009; originally announced November 2009.

Comments: 3 pages, 2 figures

Journal ref: Appl. Phys. Lett. 95, 222109 (2009)

Insulating Phases Induced by Crossing of Partially Filled Landau Levels in a Si Quantum Well

Authors: Tohru Okamoto, Kohei Sasaki, Kiyohiko Toyama, Ryuichi Masutomi, Kentarou Sawano, Yasuhiro Shiraki

Abstract: We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or hol… ▽ More We study magnetotransport in a high mobility Si two-dimensional electron system by in situ tilting of the sample relative to the magnetic field. A pronounced dip in the longitudinal resistivity is observed during the Landau level crossing process for noninteger filling factors. Together with a Hall resistivity change which exhibits the particle-hole symmetry, this indicates that electrons or holes in the relevant Landau levels become localized at the coincidence where the pseudospin-unpolarized state is expected to be stable. △ Less

Submitted 3 June, 2009; v1 submitted 3 March, 2009; originally announced March 2009.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 79, 241302(R) (2009)

Evidence for Two-Dimensional Spin-Glass Ordering in Submonolayer Fe Films on Cleaved InAs Surfaces

Authors: Toshimitsu Mochizuki, Ryuichi Masutomi, Tohru Okamoto

Abstract: Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for… ▽ More Magnetotransport measurements have been performed on two-dimensional electron gases formed at InAs(110) surfaces covered with a submonolayer of Fe. Hysteresis in the magnetoresistance, a difference in remanent magnetoresistance between zero-field-cooling procedures and field-cooling procedures, and logarithmic time-dependent relaxation after magnetic field sweep are clearly observed at 1.7 K for a coverage of 0.42 monolayer. These features are associated with spin-glass ordering in the Fe film. △ Less

Submitted 4 January, 2009; v1 submitted 24 October, 2008; originally announced October 2008.

Comments: 4 pages, 3 figures

Journal ref: Phys. Rev. Lett. 101, 267204 (2008)

Alkali-metal-induced Fermi level and two dimensional electrons at cleaved InAs(110) surfaces

Authors: Masaaki Minowa, Ryuichi Masutomi, Toshimitsu Mochizuki, Tohru Okamoto

Abstract: Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared t… ▽ More Low-temperature Hall measurements have been performed on two-dimensional electron gases (2DEGs) induced by deposition of Cs or Na on in situ cleaved surfaces of p-type InAs. The surface donor level, at which the Fermi energy of the 2DEG is pinned, is calculated from the observed saturation surface electron density using a surface potential determined self-consistently. The results are compared to those of previous photoelectron spectroscopy measurements. △ Less

Submitted 3 June, 2008; v1 submitted 31 March, 2008; originally announced March 2008.

Comments: 3 pages, 4 figures

Journal ref: Phys. Rev. B 77, 233301 (2008)

Quantum Hall effect at cleaved InSb surfaces and low-temperature annealing effect

Authors: Ryuichi Masutomi, Masayuki Hio, Toshimitsu Mochizuki, Tohru Okamoto

Abstract: We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperatur… ▽ More We have performed low-temperature in-plane magnetotransport measurements on two-dimensional electron systems induced by deposition of Ag at {\it in situ} cleaved surfaces of {\it p}-type InSb. The quantum Hall effect was observed even at low magnetic fields around 2 T. The surface electron density and the electron mobility exhibit strong dependence on the Ag-coverage and the annealing temperature in the range of 15-40 K. The annealing effect suggests that the surface morphology strongly affects the properties of the two-dimensional electron systems. △ Less

Submitted 6 April, 2007; v1 submitted 26 March, 2007; originally announced March 2007.

Comments: 3 pages, 2 figures

Journal ref: Appl. Phys. Lett. 90, 202104 (2007)