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Versatile electronic states in epitaxial thin films of (Sn-Pb-In)Te: from topological crystalline insulator and polar semimetal to superconductor
Authors:
Ryutaro Yoshimi,
Makoto Masuko,
Naoki Ogawa,
Minoru Kawamura,
Atsushi Tsukazaki,
Kei S. Takahashi,
Masashi Kawasaki,
Yoshinori Tokura
Abstract:
Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electri…
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Epitaxial thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te were successfully grown by molecular-beam-epitaxy (MBE) in a broad range of compositions (0 $\leq$ x $\leq$ 1, 0 $\leq$ y $\leq$ 0.23). We investigated electronic phases of the films by the measurements of electrical transport and optical second harmonic generation. In this system, one can control the inversion of band gap, the electric polarization that breaks the inversion symmetry, and the Fermi level position by tuning the Pb/Sn ratio and In composition. A plethora of topological electronic phases are expected to emerge, such as topological crystalline insulator, topological semimetal, and superconductivity. For the samples with large Sn compositions (x > 0.5), hole density increases with In composition (y), which results in the appearance of superconductivity. On the other hand, for those with small Sn compositions (x < 0.5), increase in In composition reduces the hole density and changes the carrier type from p-type to n-type. In a narrow region centered at (x, y) = (0.16, 0.07) where the n-type carriers are slightly doped, charge transport with high mobility exceeding 5,000 cm$^{2}$V$^{-1}$s$^{-1}$ shows up, representing the possible semimetal states. In those samples, the optical second harmonic generation measurement shows the breaking of inversion symmetry along the out-of-plane [111] direction, which ensures the presence of polar semimetal state. The thin films of (Sn$_{x}$Pb$_{1-x}$)$_{1-y}$In$_{y}$Te materials systems with a variety of electronic states would become a promising materials platform for the exploration of novel quantum phenomena.
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Submitted 19 April, 2021;
originally announced April 2021.
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Molecular beam epitaxy of superconducting Sn$_{1-x}$In$_x$Te thin films
Authors:
M. Masuko,
R. Yoshimi,
A. Tsukazaki,
M. Kawamura,
K. S. Takahashi,
M. Kawasaki,
Y. Tokura
Abstract:
We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solub…
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We report a systematic study on the growth conditions of Sn$_{1-x}$In$_x$Te thin films by molecular beam epitaxy for maximization of superconducting transition temperature $T_\mathrm{c}$. Careful tuning of the flux ratios of Sn, In, and Te enables us to find an optimum condition for substituting rich In content ($x$ = 0.66) into Sn site in a single phase of Sn$_{1-x}$In$_x$Te beyond the bulk solubility limit at ambient pressure ($x$ = 0.5). $T_\mathrm{c}$ shows a dome-shaped dependence on In content $x$ with the highest $T_\mathrm{c}$ = 4.20 K at $x$ = 0.55, being consistent to that reported for bulk crystals. The well-regulated Sn$_{1-x}$In$_x$Te films can be a useful platform to study possible topological superconductivity by integrating them into the state-of-the-art junctions and/or proximity-coupled devices.
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Submitted 30 September, 2020;
originally announced September 2020.
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The effect of laziness in chasers in group chase and escape model
Authors:
Makoto Masuko,
Takayuki Hiraoka,
Nobuyasu Ito,
Takashi Shimada
Abstract:
The effect of laziness in the group chase and escape problem is studied using a simple model. The laziness is introduced as random walks in two ways: uniformly and in a "division of labor" way. It is shown that, while the former is always ineffective, the latter can improve the efficiency of catching, through the formation of pincer attack configuration by diligent and lazy chasers.
The effect of laziness in the group chase and escape problem is studied using a simple model. The laziness is introduced as random walks in two ways: uniformly and in a "division of labor" way. It is shown that, while the former is always ineffective, the latter can improve the efficiency of catching, through the formation of pincer attack configuration by diligent and lazy chasers.
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Submitted 14 December, 2016;
originally announced December 2016.
