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180$^\circ$-twisted bilayer ReSe$_2$ as an artificial noncentrosymmetric semiconductor
Authors:
S. Akatsuka,
M. Sakano,
T. Yamamoto,
T. Nomoto,
R. Arita,
R. Murata,
T. Sasagawa,
K. Watanabe,
T. Taniguchi,
M. Kitamura,
K. Horiba,
K. Sugawara,
S. Souma,
T. Sato,
H. Kumigashira,
K. Shinokita,
H. Wang,
K. Matsuda,
S. Masubuchi,
T. Machida,
K. Ishizaka
Abstract:
We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the fi…
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We have fabricated a 180$^\circ$-twisted bilayer ReSe$_2$ by stacking two centrosymmetric monolayer ReSe$_2$ flakes in opposite directions, which is expected to lose spatial inversion symmetry. By the second harmonic generation and angle-resolved photoemission spectroscopy, we successfully observed spatial inversion symmetry breaking and emergent band dispersions. The band calculation shows the finite lifting of spin degeneracy (~50 meV) distinct from natural monolayer and bilayer ReSe$_2$. Our results demonstrate that the spin-momentum locked state, which leads to spintronic functions and Berry-curvature-related phenomena, can be realized even with the stacking of centrosymmetric monolayers.
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Submitted 27 September, 2023;
originally announced September 2023.
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Ultrafast Control of Crystal Structure in a Topological Charge-Density-Wave Material
Authors:
Takeshi Suzuki,
Yuya Kubota,
Natsuki Mitsuishi,
Shunsuke Akatsuka,
Jumpei Koga,
Masato Sakano,
Satoru Masubuchi,
Yoshikazu Tanaka,
Tadashi Togashi,
Hiroyuki Ohsumi,
Kenji Tamasaku,
Makina Yabashi,
Hidefumi Takahashi,
Shintaro Ishiwata,
Tomoki Machida,
Iwao Matsuda,
Kyoko Ishizaka,
Kozo Okazaki
Abstract:
Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-o…
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Optical control of crystal structures is a promising route to change physical properties including topological nature of a targeting material. Time-resolved X-ray diffraction measurements using the X-ray free-electron laser are performed to study the ultrafast lattice dynamics of VTe$_2$, which shows a unique charge-density-wave (CDW) ordering coupled to the topological surface states as a first-order phase transition. A significant oscillation of the CDW amplitude mode is observed at a superlattice reflection as well as Bragg reflections. The frequency of the oscillation is independent of the fluence of the pum** laser, which is prominent to the CDW ordering of the first-order phase transition. Furthermore, the timescale of the photoinduced 1$T^{\prime\prime}$ to 1$T$ phase transition is independent of the period of the CDW amplitude mode.
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Submitted 26 May, 2023;
originally announced May 2023.
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Observation of phonon Poiseuille flow in isotopically-purified graphite ribbons
Authors:
Xin Huang,
Yangyu Guo,
Yunhui Wu,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Zhongwei Zhang,
Sebastian Volz,
Tomoki Machida,
Masahiro Nomura
Abstract:
In recent times, the unique collective transport physics of phonon hydrodynamics motivates theoreticians and experimentalists to explore it in micro- and nanoscale and at elevated temperatures. Graphitic materials have been predicted to facilitate hydrodynamic heat transport with their intrinsically strong normal scattering. However, owing to the experimental difficulties and vague theoretical und…
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In recent times, the unique collective transport physics of phonon hydrodynamics motivates theoreticians and experimentalists to explore it in micro- and nanoscale and at elevated temperatures. Graphitic materials have been predicted to facilitate hydrodynamic heat transport with their intrinsically strong normal scattering. However, owing to the experimental difficulties and vague theoretical understanding, the observation of phonon Poiseuille flow in graphitic systems remains challenging. In this study, based on a microscale experimental platform and the pertinent occurrence criterion in anisotropic solids, we demonstrate the phonon Poiseuille flow in a 5 μm-wide suspended graphite ribbon with purified 13C isotope concentration. Our observation is well supported by our theoretical model based on a kinetic theory with fully first-principles inputs. Thus, this study paves the way for deeper insight into phonon hydrodynamics and cutting-edge heat manipulating applications.
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Submitted 4 July, 2022;
originally announced July 2022.
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Direct observation of the layer-number-dependent electronic structure in few-layer WTe2
Authors:
M. Sakano,
Y. Tanaka,
S. Masubuchi,
S. Okazaki,
T. Nomoto,
A. Oshima,
K. Watanabe,
T. Taniguchi,
R. Arita,
T. Sasagawa,
T. Machida,
K. Ishizaka
Abstract:
When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhib…
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When a crystal becomes thinner and thinner to the atomic level, peculiar phenomena discretely depending on its layer-numbers (n) start to appear. The symmetry and wave functions strongly reflect the layer-numbers and stacking order, which brings us a potential of realizing new properties and functions that are unexpected in either bulk or simple monolayer. Multilayer WTe2 is one such example exhibiting unique ferroelectricity and non-linear transport properties related to the antiphase stacking and Berry-curvature dipole. Here we investigate the electronic band dispersions of multilayer WTe2 (2-5 layers), by performing laser-based micro-focused angle-resolved photoelectron spectroscopy on exfoliated-flakes that are strictly sorted by n and encapsulated by graphene. We clearly observed the insulator-semimetal transition occurring between 2- and 3-layers, as well as the 30-70 meV spin-splitting of valence bands manifesting in even n as a signature of stronger structural asymmetry. Our result fully demonstrates the possibility of the large energy-scale band and spin manipulation through the finite n stacking procedure.
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Submitted 22 March, 2021;
originally announced March 2021.
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Selective Etching of Hexagonal Boron Nitride by High-Pressure CF4 Plasma for Individual One-dimensional Ohmic Contacts to Graphene Layers
Authors:
Yuta Seo,
Satoru Masubuchi,
Eisuke Watanabe,
Momoko Onodera,
Rai Moriya,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma aniso…
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We describe a technique for making one-dimensional ohmic contacts to individual graphene layers encapsulated in hexagonal boron nitride (h-BN) using CF4 and O2 plasmas. The high etch selectivity of h-BN against graphene (>1000) is achieved by increasing the plasma pressure, which enables etching of h-BN, while graphene acts as an etch stop to protect underlying h-BN. A low-pressure O2 plasma anisotropically etches graphene in the vertical direction, which exposes graphene edges at h-BN sidewalls. Despite the O2 plasma bombardment, the lower h-BN layer functions as an insulating layer. Thus, this method allows us to pattern metal electrodes on h-BN over a second graphene layer. Subsequent electron-beam lithography and evaporation fabricate metal contacts at the graphene edges that are active down to cryogenic temperatures. This fabrication method is demonstrated by the preparation of a graphene Hall bar with a graphite back-gate and double bilayer-graphene Hall bar devices. The high flexibility of the device geometries enabled by this method creates access to a variety of experiments on electrostatically coupled graphene layers.
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Submitted 4 December, 2020;
originally announced December 2020.
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Dark-state impact on the exciton recombination of WS2 monolayers as revealed by multi-time-scale pump-and-probe spectroscopy
Authors:
Takashi Kuroda,
Yusuke Hoshi,
Satoru Masubuchi,
Mitsuhiro Okada,
Ryo Kitaura,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yie…
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The luminescence yield of transition metal dichalcogenide monolayers frequently suffers from the formation of long-lived dark states, which include excitons with intervalley charge carriers, spin-forbidden transitions, and a large center-of-mass momentum located outside the light cone of dispersion relations. Efficient relaxation from bright exciton states to dark states suppresses the quantum yield of photon emission. In addition, the radiative recombination of excitons is heavily influenced by Auger-type exciton-exciton scattering, which yields another nonradiative relaxation channel at room temperature. Here, we show that Auger-type scattering is promoted not only between (bright) excitons but also between excitons and long-lived dark states. We studied the luminescence dynamics of monolayer WS2 capped with hexagonal BN over broad time ranges of picoseconds to milliseconds using carefully designed pump-and-probe techniques. We observed that luminescence quenching associated with Auger-type scattering occurs on 1-100 microsecond time scales, which thus correspond to the lifetimes of the relevant dark states. The broad distribution of the measured lifetimes implies the impact of various types of long-lived states on the exciton annihilation process.
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Submitted 20 October, 2020;
originally announced October 2020.
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Deep-Learning-Based Image Segmentation Integrated with Optical Microscopy for Automatically Searching for Two-Dimensional Materials
Authors:
Satoru Masubuchi,
Eisuke Watanabe,
Yuta Seo,
Shota Okazaki,
Takao Sasagawa,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials…
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Deep-learning algorithms enable precise image recognition based on high-dimensional hierarchical image features. Here, we report the development and implementation of a deep-learning-based image segmentation algorithm in an autonomous robotic system to search for two-dimensional (2D) materials. We trained the neural network based on Mask-RCNN on annotated optical microscope images of 2D materials (graphene, hBN, MoS2, and WTe2). The inference algorithm is run on a 1024 x 1024 px2 optical microscope images for 200 ms, enabling the real-time detection of 2D materials. The detection process is robust against changes in the microscopy conditions, such as illumination and color balance, which obviates the parameter-tuning process required for conventional rule-based detection algorithms. Integrating the algorithm with a motorized optical microscope enables the automated searching and cataloging of 2D materials. This development will allow researchers to utilize unlimited amounts of 2D materials simply by exfoliating and running the automated searching process.
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Submitted 28 October, 2019;
originally announced October 2019.
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Detection of cyclotron resonance using photo-induced thermionic emission at graphene/MoS2 van der Waals interface
Authors:
Yusai Wakafuji,
Rai Moriya,
Sabin Park,
Kei Kinoshita,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We demonstrate the detection of cyclotron resonance in graphene by using a photo-induced thermionic emission mechanism at the graphene/MoS2 van der Waals (vdW) Schottky junction. At cyclotron resonance in Landau-quantized graphene, the infrared light is absorbed and an electron-hole pair is generated. When the energy of a photoexcited electron exceeds the band offset energy at the graphene/MoS2 in…
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We demonstrate the detection of cyclotron resonance in graphene by using a photo-induced thermionic emission mechanism at the graphene/MoS2 van der Waals (vdW) Schottky junction. At cyclotron resonance in Landau-quantized graphene, the infrared light is absorbed and an electron-hole pair is generated. When the energy of a photoexcited electron exceeds the band offset energy at the graphene/MoS2 interface, the electron transfer occurs from graphene to the conduction band of MoS2, and the hole remains in graphene. This creates an electron-hole separation at the graphene/MoS2 interface at cyclotron resonance and a photovoltage is generated. The proposed method is an infrared photodetection technique through out-of-plane transport at the vdW junction, which is distinct from the previously reported methods that use in-plane transport in graphene for electronic detection of the cyclotron resonance. Despite the simple structure of our device with a single-vdW junction, our method exhibits a very high sensitivity of about 10^6 V/W, which shows an improvement of three orders of magnitude over the previously reported values. Therefore, the proposed method displays a high potential for cyclotron resonance-based infrared photodetector applications.
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Submitted 31 October, 2019; v1 submitted 18 September, 2019;
originally announced September 2019.
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Photo-Nernst detection of cyclotron resonance in partially irradiated graphene
Authors:
Kei Kinoshita,
Rai Moriya,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
Cyclotron resonance of a Landau-quantized graphene can absorb significant amount of infrared light. However, application of this phenomenon to the photodetector had been limited due to the lack of efficient photon to charge conversion scheme. Here, we demonstrate the detection of cyclotron resonance in a partially metal-masked monolayer graphene two-terminal device using photo-Nernst effect. Due t…
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Cyclotron resonance of a Landau-quantized graphene can absorb significant amount of infrared light. However, application of this phenomenon to the photodetector had been limited due to the lack of efficient photon to charge conversion scheme. Here, we demonstrate the detection of cyclotron resonance in a partially metal-masked monolayer graphene two-terminal device using photo-Nernst effect. Due to the presence of the mask, incident infrared light is irradiated on only one-half of the graphene channel. This partial irradiation creates a temperature gradient perpendicular to the graphene channel. In the presence of an external magnetic field, thermopower is generated perpendicular to the temperature gradient due to the Nernst effect. Consequently, photo-Nernst voltage is generated along the graphene channel, which can be detected from the contacts on both ends of the channel. We demonstrate selective detection of the photo-Nernst effect while minimizing the other photovoltaic contributions, such as the photo-Seebeck effect. We investigate the dependence of the photo-Nernst effect on magnetic field and excitation wavelength, which reveals a significant enhancement of photo-Nernst signal at the cyclotron resonance conditions in graphene. Our finding could facilitate the realization of far-infrared light detector using cyclotron resonance of graphene.
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Submitted 31 October, 2019; v1 submitted 8 September, 2019;
originally announced September 2019.
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Dry release transfer of graphene and few-layer h-BN by utilizing thermoplasticity of polypropylene carbonate for fabricating edge-contact-free van der Waals heterostructures
Authors:
Kei Kinoshita,
Rai Moriya,
Momoko Onodera,
Yusai Wakafuji,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been widely used for the dry release transfer of TMD materials. However, this method has been known to have limitations that make it difficult to transfer few-layer-th…
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The dry release transfer of two-dimensional (2D) materials such as graphene, h-BN, and TMDs is a versatile method for fabricating high-quality van der Waals heterostructures. Up until now, polydimethylpolysiloxane (PDMS) sheets have been widely used for the dry release transfer of TMD materials. However, this method has been known to have limitations that make it difficult to transfer few-layer-thick graphene and h-BN because of the difficulty to fabricate these materials on PDMS. As an alternative method, we demonstrate the dry release transfer of single- and bi-layer graphene and few-layer h-BN in this study by utilizing poly(propylene) carbonate (PPC) films. Because of the strong adhesion between PPC and 2D materials around room temperature, we demonstrate that single- to few-layer graphene, as well as few-layer h-BN, can be fabricated on a spin-coated PPC film/290-nm-thick SiO2/Si substrate via the mechanical exfoliation method. In addition, we show that these few-layer crystals are clearly distinguishable using an optical microscope with the help of optical interference. Because of the thermoplastic properties of PPC film, the adhesion force between the 2D materials and PPC significantly decreases at about 70 °C. Therefore, we demonstrate that single- to few-layer graphene, as well as few-layer h-BN flakes, on PPC can be easily dry-transferred onto another h-BN substrate. This method enables a multilayer van der Waals heterostructure to be constructed with a minimum amount of polymer contamination. We demonstrate the fabrication of encapsulated h-BN/graphene/h-BN devices and graphene/few-layer h-BN/graphene vertical-tunnel-junction devices using this method. Since devices fabricated by this method do not require an edge-contact scheme, our finding provide a simples method for constructing high-quality graphene and h-BN-based van der Waals heterostructures.
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Submitted 27 April, 2019;
originally announced April 2019.
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Photo-thermoelectric detection of cyclotron resonance in asymmetrically carrier-doped graphene two-terminal device
Authors:
Kei Kinoshita,
Rai Moriya,
Miho Arai,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an…
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Graphene is known to show a significant photo-thermoelectric effect that can exceed its photovoltaic contribution. Here, by utilizing this effect, we demonstrate a photovoltage measurement of cyclotron resonance in a double-back-gated h-BN/graphene/h-BN two-terminal device. A graphite local bottom gate was fabricated in addition to a p-doped Si global back gate. By tuning the two gate voltages, an in-plane graphene junction having an asymmetric carrier-do** profile was created. With the help of this asymmetric structure, the photo-thermoelectric voltage generated in the vicinity of the metal-electrode/graphene junction was detected. At a low temperature and in the presence of a magnetic field, a photo-induced voltage was measured under the irradiation of an infrared laser (Wavelength= 9.28 to 10.61 micron). We observed a strong enhancement of the photovoltage signal under the cyclotron resonance condition, at which the energy of excitation coincides with a transition between Landau levels. These results highlight the possibility of using the photo-thermoelectric effect in graphene for THz photo-detection.
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Submitted 6 September, 2018;
originally announced September 2018.
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Heat transfer at the van der Waals interface between graphene and NbSe2
Authors:
Yohta Sata,
Rai Moriya,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by t…
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Graphene has been widely used to construct low-resistance van der Waals (vdW) contacts to other two-dimensional (2D) materials. However, a rise of electron temperature of the graphene under a current flow has not been seriously considered in many applications. Owing to its small electronic heat capacity and electron-phonon coupling, electron temperature of the graphene can be increased easily by the application of current. The heat generated within the graphene is transferred to the contacted 2D materials through the vdW interface and potentially influences their properties. Here, we compare the superconducting critical currents of an NbSe2 flake for two different methods of current application: with a Au/Ti electrode fabricated by thermal evaporation and with a graphene electrode contacted to the NbSe2 flake through a vdW interface. The influence of the heat transfer from the graphene to NbSe2 is detected through the change of the superconductivity of NbSe2. We found that the critical current of NbSe2 significantly reduces when the current is applied with the graphene electrode compared to that from the conventional Au/Ti electrode. Further, since the electron heating in graphene exhibits ambipolar back-gate modulation, we demonstrate the electric field modulation of the critical current in NbSe2 when the current is applied with graphene electrode. These results are attributed to the significant heat transfer from the graphene electrode to NbSe2 through vdW interface.
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Submitted 18 July, 2018;
originally announced July 2018.
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Imaging bulk and edge transport near the Dirac point in graphene moiré superlattices
Authors:
Ziwei Dou,
Sei Morikawa,
Alessandro Cresti,
Shu-Wei Wang,
Charles G. Smith,
Christos Melios,
Olga Kazakova,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm R. Connolly
Abstract:
Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states a…
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Van der Waals structures formed by aligning monolayer graphene with insulating layers of hexagonal boron nitride exhibit a moiré superlattice that is expected to break sublattice symmetry. Despite an energy gap of several tens of millielectron volts opening in the Dirac spectrum, electrical resistivity remains lower than expected at low temperature and varies between devices. While subgap states are likely to play a role in this behavior, their precise nature is unclear. We present a scanning gate microscopy study of moiré superlattice devices with comparable activation energy but with different charge disorder levels. In the device with higher charge impurity (~${10}^{10}$ $cm^{-2}$) and lower resistivity (~$10$ $kΩ$) at the Dirac point we observe current flow along the graphene edges. Combined with simulations, our measurements suggest that enhanced edge do** is responsible for this effect. In addition, a device with low charge impurity (~$10^9$ $cm^{-2}$) and higher resistivity (~$100$ $kΩ$) shows subgap states in the bulk, consistent with the absence of shunting by edge currents.
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Submitted 21 November, 2017;
originally announced November 2017.
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Inter-subband Landau level couplings induced by in-plane magnetic fields in trilayer graphene
Authors:
Yuta Asakawa,
Satoru Masubuchi,
Naoko Inoue,
Sei Morikawa,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from $0^{\circ}$ to $66^\circ$, the LL crossings formed at intersections of zeroth and second LLs from monolayer-graphene-like and bilayer-graphene-like subbands, respectivel…
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We observed broken-symmetry quantum Hall effects and level crossings between spin- and valley- resolved Landau levels (LLs) in Bernal stacked trilayer graphene. When the magnetic field was tilted with respect to sample normal from $0^{\circ}$ to $66^\circ$, the LL crossings formed at intersections of zeroth and second LLs from monolayer-graphene-like and bilayer-graphene-like subbands, respectively, exhibited a sequence of transitions. The results indicate the LLs from different subbands are coupled by in-plane magnetic fields ($B_{\parallel}$), which was explained by develo** the tight-binding model Hamiltonian of trilayer graphene under $B_{\parallel}$.
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Submitted 25 September, 2017;
originally announced September 2017.
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Exfoliation and van der Waals heterostructure assembly of intercalated ferromagnet Cr1/3TaS2
Authors:
Yuji Yamasaki,
Rai Moriya,
Miho Arai,
Satoru Masubuchi,
Sunseng Pyon,
Tsuyoshi Tamegai,
Keiji Ueno,
Tomoki Machida
Abstract:
Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-t…
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Ferromagnetic van der Waals (vdW) materials are in demand for spintronic devices with all-two-dimensional-materials heterostructures. Here, we demonstrate mechanical exfoliation of magnetic-atom-intercalated transition metal dichalcogenide Cr1/3TaS2 from its bulk crystal; previously such intercalated materials were thought difficult to exfoliate. Magnetotransport in exfoliated tens-of-nanometres-thick flakes revealed ferromagnetic ordering below its Curie temperature TC ~ 110 K as well as strong in-plane magnetic anisotropy; these are identical to its bulk properties. Further, van der Waals heterostructure assembly of Cr1/3TaS2 with another intercalated ferromagnet Fe1/4TaS2 is demonstrated using a dry-transfer method. The fabricated heterojunction composed of Cr1/3TaS2 and Fe1/4TaS2 with a native Ta2O5 oxide tunnel barrier in between exhibits tunnel magnetoresistance (TMR), revealing possible spin injection and detection with these exfoliatable ferromagnetic materials through the vdW junction.
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Submitted 25 September, 2017;
originally announced September 2017.
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Dirac fermion reflector by ballistic graphene sawtooth-shaped npn junctions
Authors:
Sei Morikawa,
Quentin Wilmart,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Bernard Plaçais,
Tomoki Machida
Abstract:
We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed cl…
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We have realized a Dirac fermion reflector in graphene by controlling the ballistic carrier trajectory in a sawtooth-shaped npn junction. When the carrier density in the inner p-region is much larger than that in the outer n-regions, the first straight np interface works as a collimator and the collimated ballistic carriers can be totally reflected at the second zigzag pn interface. We observed clear resistance enhancement around the np+n regime, which is in good agreement with the numerical simulation. The tunable reflectance of ballistic carriers could be an elementary and important step for realizing ultrahigh-mobility graphene field effect transistors utilizing Dirac fermion optics in the near future.
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Submitted 13 February, 2017;
originally announced February 2017.
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N- and p-type carrier injections into WSe2 with van der Waals contacts of two-dimensional materials
Authors:
Yohta Sata,
Rai Moriya,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these c…
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We demonstrated n-type and p-type carrier injections into a transition metal dichalcogenide (TMD) WSe2 using van der Waals (vdW) contacts of two-dimensional (2D) materials: graphite for an n-type contact and NbSe2 for a p-type contact. Instead of conventional methods such as the evaporation of metals on TMD, 2D metals were transferred onto WSe2 in order to form van der Waals contacts. With these contacts, we demonstrated a small Schottky barrier height for both carrier polarities. Our finding reveals the potential of a high-performance vdW metal/semiconductor contact for use in electronics applications.
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Submitted 28 March, 2017; v1 submitted 8 February, 2017;
originally announced February 2017.
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Spin injection into multilayer graphene from highly spin-polarized Co2FeSi Heusler alloy
Authors:
Takehiro Yamaguchi,
Rai Moriya,
Yoichiro Oki,
Shinya Yamada,
Satoru Masubuchi,
Kohei Hamada,
Tomoki Machida
Abstract:
We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Ele…
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We demonstrate electrical spin injection into multilayer graphene (MLG) in a lateral spin valve device from a highly spin-polarized Co2FeSi (CFS) Huesler electrode. Exfoliated MLG was transferred onto pre-patterned epitaxial CFS wires grown on an Si(111) substrate by a polymer-based transfer method. This method enabled us to fabricate multiple single-crystal CFS electrodes in contact with MLG. Electrical spin injection from CFS to MLG was detected through non-local magnetoresistance (MR) measurement. A non-local spin signal of 430 ohm was observed; this is the largest value among all reported non-local MR values in graphene-based devices.
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Submitted 13 May, 2016;
originally announced May 2016.
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Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide
Authors:
Miho Arai,
Rai Moriya,
Naoto Yabuki,
Satoru Masubuchi,
Keiji Ueno,
Tomoki Machida
Abstract:
We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an exter…
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We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe0.25TaS2. The vdW interlayer coupling at the Fe-intercalated plane of Fe0.25TaS2 allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material through the vdW junction.
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Submitted 11 September, 2015;
originally announced September 2015.
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Imaging ballistic carrier trajectories in graphene using scanning gate microscopy
Authors:
Sei Morikawa,
Ziwei Dou,
Shu-Wei Wang,
Charles Gorden Smith,
Kenji Watanabe,
Takashi Taniguchi,
Satoru Masubuchi,
Tomoki Machida,
Malcolm Richard Connolly
Abstract:
We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collecto…
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We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanning the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.
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Submitted 15 December, 2015; v1 submitted 2 August, 2015;
originally announced August 2015.
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Electric field modulation of Schottky barrier height in graphene/MoSe2 van der Waals heterointerface
Authors:
Yohta Sata,
Rai Moriya,
Sei Morikawa,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an extern…
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We demonstrate a vertical field-effect transistor based on a graphene/MoSe2 van der Waals (vdW) heterostructure. The vdW interface between the graphene and MoSe2 exhibits a Schottky barrier with an ideality factor of around 1.3, suggesting a high-quality interface. Owing to the low density of states in graphene, the position of the Fermi level in the graphene can be strongly modulated by an external electric field. Therefore, the Schottky barrier height at the graphene/MoSe2 vdW interface is also modulated. We demonstrate a large current ON-OFF ratio of 10^5. These results point to the potential high performance of the graphene/MoSe2 vdW heterostructure for electronics applications.
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Submitted 18 July, 2015;
originally announced July 2015.
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Influence of the density of states of graphene on the transport properties of graphene/MoS2/metal vertical field-effect transistors
Authors:
Rai Moriya,
Takehiro Yamaguchi,
Yoshihisa Inoue,
Yohta Sata,
Sei Morikawa,
Satoru Masubuchi,
Tomoki Machida
Abstract:
We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for dri…
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We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus the external electric field. Under the application of a bias voltage VB between graphene and the metal layer in the graphene/MoS2/metal heterostructure for driving current through the van der Waals interface, the electric field across the MoS2 dielectric induces a shift in the Fermi level of graphene. When the Fermi level of graphene coincides with the Dirac point, a significant nonlinearity appears in the measured I-V curve, thus enabling us to perform spectroscopy of the Dirac point. By detecting the Dirac point for different back-gate voltages, we revealed that the capacitance of the nanometer-thick MoS2 layer can be determined from a simple DC transport measurement.
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Submitted 2 June, 2015;
originally announced June 2015.
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Edge-channel interferometer at the graphene quantum Hall pn junction
Authors:
Sei Morikawa,
Satoru Masubuchi,
Rai Moriya,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of…
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We demonstrate a quantum Hall edge-channel interferometer in a high-quality graphene pn junction under a high magnetic field. The co-propagating p and n quantum Hall edge channels traveling along the pn interface functions as a built-in Aharanov-Bohm-type interferometer, the interferences in which are sensitive to both the external magnetic field and the carrier concentration. The trajectories of peak and dip in the observed resistance oscillation are well reproduced by our numerical calculation that assumes magnetic flux quantization in the area enclosed by the co-propagating edge channels. Coherent nature of the co-propagating edge channels are confirmed by the checkerboard-like pattern in the dc-bias and magnetic-field dependences of the resistance oscillations.
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Submitted 29 March, 2015;
originally announced March 2015.
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Modulation of Schottky barrier height in graphene/MoS2/metal vertical heterostructure with large current ON-OFF ratio
Authors:
Yohta Sata,
Rai Moriya,
Takehiro Yamaguchi,
Yoshihisa Inoue,
Sei Morikawa,
Naoto Yabuki,
Satoru Masubuchi,
Tomoki Machida
Abstract:
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature depende…
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Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer enables us to modulate the Schottky barrier height; thus gives rise to the control of the current flow across the interface. By analyzing the temperature dependence of the conductance, the modulation of Schottky barrier height Δφ has been directly determined. We observed significant MoS2 layer number dependence of Δφ. Moreover, we demonstrate that the device which shows larger Δφ exhibits larger current modulation; this is consistent with the fact that the transport of these devices is dominated by graphene/MoS2 Schottky barrier.
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Submitted 7 March, 2015;
originally announced March 2015.
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Tunneling transport in a few monolayer-thick WS2/graphene heterojunction
Authors:
Takehiro Yamaguchi,
Rai Moriya,
Yoshihisa Inoue,
Sei Morikawa,
Satoru Masubuchi,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 mo…
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This paper demonstrates the high-quality tunnel barrier characteristics and layer number controlled tunnel resistance of a transition metal dichalcogenide (TMD) measuring just a few monolayers in thickness. Investigation of vertical transport in WS2 and MoS2 TMDs in graphene/TMD/metal heterostructures revealed that WS2 exhibits tunnel barrier characteristics when its thickness is between 2 to 5 monolayers, whereas MoS2 experiences a transition from tunneling to thermionic emission transport with increasing thickness within the same range. Tunnel resistance in a graphene/WS2/metal heterostructure therefore increases exponentially with the number of WS2 layers, revealing the tunnel barrier height of WS2 to be 0.37 eV.
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Submitted 9 December, 2014; v1 submitted 17 November, 2014;
originally announced November 2014.
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Large current modulation in exfoliated-graphene/MoS2/metal vertical heterostructures
Authors:
Rai Moriya,
Takehiro Yamaguchi,
Yoshihisa Inoue,
Sei Morikawa,
Yohta Sata,
Satoru Masubuchi,
Tomoki Machida
Abstract:
Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS…
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Graphene-based vertical field effect transistors have attracted considerable attention in the light of realizing high-speed switching devices; however, the functionality of such devices has been limited by either their small ON-OFF current ratios or ON current densities. We fabricate a graphene/MoS2/metal vertical heterostructure by using mechanical exfoliation and dry transfer of graphene and MoS2 layers. The van der Waals interface between graphene and MoS2 exhibits a Schottky barrier, thus enabling the possibility of well-defined current rectification. The height of the Schottky barrier can be strongly modulated by an external gate electric field owing to the small density of states of graphene. We obtain large current modulation exceeding 10^5 simultaneously with a large current density of ~10^4 A/cm^2 , thereby demonstrating the superior performance of the exfoliated-graphene/MoS2/metal vertical field effect transistor
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Submitted 29 August, 2014;
originally announced August 2014.
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Cubic Rashba spin-orbit interaction of two-dimensional hole gas in strained-Ge/SiGe quantum well
Authors:
Rai Moriya,
Kentarou Sawano,
Yusuke Hoshi,
Satoru Masubuchi,
Yasuhiro Shiraki,
Andreas Wild,
Christian Neumann,
Gerhard Abstreiter,
Dominique Bougeard,
Takaaki Koga,
Tomoki Machida
Abstract:
The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba…
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The spin-orbit interaction (SOI) of the two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observed weak anti-localization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrated electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained-Ge is a purely cubic-Rashba-system, which is consistent with the spin angular momentum mj = +-3/2 nature of the HH wave function.
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Submitted 7 August, 2014; v1 submitted 5 August, 2014;
originally announced August 2014.
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Electrical spin injection into graphene through monolayer hexagonal boron nitride
Authors:
Takehiro Yamaguchi,
Yoshihisa Inoue,
Satoru Masubuchi,
Sei Morikawa,
Masahiro Onuki,
Kenji Watanabe,
Takashi Taniguchi,
Rai Moriya,
Tomoki Machida
Abstract:
We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been d…
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We demonstrate electrical spin injection from a ferromagnet to a bilayer graphene (BLG) through a monolayer (ML) of single-crystal hexagonal boron nitride (h-BN). A Ni81Fe19/ML h-BN/BLG/h-BN structure is fabricated using a micromechanical cleavage and dry transfer technique. The transport properties across the ML h-BN layer exhibit tunnel barrier characteristics. Spin injection into BLG has been detected through non local magnetoresistance measurements.
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Submitted 30 May, 2013;
originally announced May 2013.
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Spin Relaxation in Weak Localization Regime in Multilayer Graphene Spin Valves
Authors:
Takehiro Yamaguchi,
Rai Moriya,
Satoru Masubuchi,
Kazuyuki Iguchi,
Tomoki Machida
Abstract:
The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR) measurements below 70 K, suggesting coherent transport of the charge carriers. Within the same temperature range, we observed a large increase in the spin relaxat…
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The temperature dependence of the spin relaxation time in multilayer graphene (MLG) spin valve devices was measured using a non-local magnetoresistance (NLMR) measurement. A weak localization (WL) was observed from magnetoresistance (MR) measurements below 70 K, suggesting coherent transport of the charge carriers. Within the same temperature range, we observed a large increase in the spin relaxation time and spin diffusion length even though the diffusion constant Ds was suppressed by the WL. This demonstrated that the spin relaxation time in MLG could be significantly extended when the charge experiences quantum interference effect in the coherent charge transport regime.
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Submitted 8 March, 2013;
originally announced March 2013.
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Boundary Scattering in Ballistic Graphene
Authors:
Satoru Masubuchi,
Kazuyuki Iguchi,
Takehiro Yamaguchi,
Masahiro Onuki,
Miho Arai,
Kenji Watanabe,
Takashi Taniguchi,
Tomoki Machida
Abstract:
We report magnetotransport measurements in ballistic graphene/hexagonal boron nitride mesoscopic wires where the charge carrier mean free path is comparable to wire width $W$. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius $R_\textrm{c}$ and wire width $W$ as $W/R_\textrm{c} = 0.9 \pm 0.1$, due to diffusive boundary scatt…
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We report magnetotransport measurements in ballistic graphene/hexagonal boron nitride mesoscopic wires where the charge carrier mean free path is comparable to wire width $W$. Magnetoresistance curves show characteristic peak structures where the peak field scales with the ratio of cyclotron radius $R_\textrm{c}$ and wire width $W$ as $W/R_\textrm{c} = 0.9 \pm 0.1$, due to diffusive boundary scattering. The obtained proportionality constant between $R_\textrm{c}$ and $W$ differs from that of a classical semiconductor 2D electron system where $W/R_\textrm{c} = 0.55$.
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Submitted 23 May, 2012;
originally announced May 2012.
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Tunnel spin injection into graphene using Al2O3 barrier grown by atomic layer deposition on functionalized graphene surface
Authors:
Takehiro Yamaguchi,
Satoru Masubuchi,
Kazuyuki Iguchi,
Rai Moriya,
Tomoki Machida
Abstract:
We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin inj…
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We demonstrate electrical tunnel spin injection from a ferromagnet to graphene through a high-quality Al2O3 grown by atomic layer deposition (ALD). The graphene surface is functionalized with a self-assembled monolayer of 3,4,9,10-perylene tetracarboxylic acid (PTCA) to promote adhesion and growth of Al2O3 with a smooth surface. Using this composite tunnel barrier of ALD-Al2O3 and PTCA, a spin injection signal of 30 ohm has been observed from non-local magnetoresistance measurements at 45 K, revealing potentially high performance of ALD-Al2O3/PTCA tunnel barrier for spin injection into graphene.
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Submitted 6 October, 2011;
originally announced October 2011.
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Strain-induced enhancement of electric quadrupole splitting in resistively detected nuclear magnetic resonance spectrum in quantum Hall systems
Authors:
Minoru Kawamura,
Tatsuya Yamashita,
Hiroyuki Takahashi,
Satoru Masubuchi,
Yoshiaki Hashimoto,
Shingo Katsumoto,
Tomoki Machida
Abstract:
We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained,…
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We show electrical coherent manipulation of quadrupole-split nuclear spin states in a GaAs/AlGaAs heterostructure on the basis of the breakdown of quantum Hall effect. The electric quadrupole splitting in nuclear spin energy levels is intentionally enhanced by applying an external stress to the heterostructure. Nuclear magnetic resonance spectra with clearly separated triple peaks are obtained, and Rabi oscillations are observed between the nuclear spin energy levels. The decay of the spin-echo signal is compared between the cases before and after the enhancement of quadrupole splitting.
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Submitted 21 December, 2009;
originally announced December 2009.
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Fabrication of graphene nanoribbon by local anodic oxidation lithography using atomic force microscope
Authors:
S. Masubuchi,
M. Ono,
K. Yoshida,
K. Hirakawa,
T. Machida
Abstract:
We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tap**-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphen…
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We conducted local anodic oxidation (LAO) lithography in single-layer, bilayer, and multilayer graphene using tap**-mode atomic force microscope. The width of insulating oxidized area depends systematically on the number of graphene layers. An 800-nm-wide bar-shaped device fabricated in single-layer graphene exhibits the half-integer quantum Hall effect. We also fabricated a 55-nm-wide graphene nanoribbon (GNR). The conductance of the GNR at the charge neutrality point was suppressed at low temperature, which suggests the opening of an energy gap due to lateral confinement of charge carriers. These results show that LAO lithography is an effective technique for the fabrication of graphene nanodevices.
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Submitted 29 November, 2008;
originally announced December 2008.
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Observation of half-integer quantum Hall effect in single-layer graphene using pulse magnet
Authors:
Satoru Masubuchi,
Ken-ichi Suga,
Masashi Ono,
Koichi Kindo,
Shojiro Takeyama,
Tomoki Machida
Abstract:
We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)ν^{-1}$ with $ν$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even o…
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We report magnetotransport measurements on a single-layer graphene in pulsed magnetic fields up to $B$ = 53 T. With either electron- or hole-type charge carriers, the Hall resistance $R_{H}$ is quantized into $R_{H}$ = $(h/e^2)ν^{-1}$ with $ν$ = $\pm$2, $\pm$6, and $\pm$10, which demonstrates the observation of half-integer quantum Hall effect (QHE). At $B$ = 50 T, the half-integer QHE is even observed at room temperature in spite of a conventional carrier mobility $μ$ = 4000 cm$^2$/Vs.
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Submitted 9 October, 2008; v1 submitted 13 August, 2008;
originally announced August 2008.
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Dynamic Nuclear Polarization in a Quantum Hall Corbino Disk
Authors:
Minoru Kawamura,
Hiroyuki Takahashi,
Satoru Masubuchi,
Yoshiaki Hashimoto,
Shingo Katsumoto,
Kohei Hamaya,
Tomoki Machida
Abstract:
Electrical polarization of nuclear spins is studied in a Corbino disk under a breakdown regime of the quantum Hall effect (QHE). Since the edge channels are completely absent in the Corbino disk, we conclude that the electric current flowing in the bulk channel of a quantum Hall conductor is relevant to dynamic nuclear polarization (DNP). A pump and probe measurement demonstrates that DNP emerge…
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Electrical polarization of nuclear spins is studied in a Corbino disk under a breakdown regime of the quantum Hall effect (QHE). Since the edge channels are completely absent in the Corbino disk, we conclude that the electric current flowing in the bulk channel of a quantum Hall conductor is relevant to dynamic nuclear polarization (DNP). A pump and probe measurement demonstrates that DNP emerges near the critical voltage of the QHE breakdown. The agreement of the onset voltage of DNP with that of the QHE breakdown indicates that the underlying origin of DNP is closely related to that of the QHE breakdown.
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Submitted 19 December, 2007;
originally announced December 2007.
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Dynamic nuclear polarization and Knight shift measurements in a breakdown regime of integer quantum Hall effect
Authors:
M. Kawamura,
H. Takahashi,
S. Masubuchi,
Y. Hashimoto,
S. Katsumoto,
K. Hamaya,
T. Machida
Abstract:
Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tu…
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Nuclear spins are polarized electrically in a breakdown regime of an odd-integer quantum Hall effect (QHE). Electron excitation to the upper Landau subband with the opposite spin polarity flips nuclear spins through the hyperfine interaction. The polarized nuclear spins reduce the spin-splitting energy and accelerate the QHE breakdown. The Knight shift of the nuclear spins is also measured by tuning electron density during the irradiation of radio-frequency magnetic fields.
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Submitted 21 November, 2007;
originally announced November 2007.
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Electrical coherent control of nuclear spins in a breakdown regime of quantum Hall effect
Authors:
H. Takahashi,
M. Kawamura,
S. Masubuchi,
K. Hamaya,
T. Machida,
Y. Hashimoto,
S. Katsumoto
Abstract:
Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins s…
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Using a conventional Hall-bar geometry with a micro-metal strip on top of the surface, we demonstrate an electrical coherent control of nuclear spins in an AlGaAs/GaAs semiconductor heterostructure. A breakdown of integer quantum Hall (QH) effect is utilized to dynamically polarize nuclear spins. By applying a pulse rf magnetic field with the metal strip, the quantum state of the nuclear spins shows Rabi oscillations, which is detected by measuring longitudinal voltage of the QH conductor.
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Submitted 27 September, 2007; v1 submitted 24 May, 2007;
originally announced May 2007.
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Electrical polarization of nuclear spins in a breakdown regime of quantum Hall effect
Authors:
M. Kawamura,
H. Takahashi,
K. Sugihara,
S. Masubuchi,
K. Hamaya,
T. Machida
Abstract:
We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hystereti…
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We have developed a method for electrical polarization of nuclear spins in quantum Hall systems. In a breakdown regime of odd-integer quantum Hall effect (QHE), excitation of electrons to the upper Landau subband with opposite spin polarity dynamically polarizes nuclear spins through the hyperfine interaction. The polarized nuclear spins in turn accelerate the QHE breakdown, leading to hysteretic voltage-current characteristics of the quantum Hall conductor.
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Submitted 15 November, 2006;
originally announced November 2006.
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Spin transport through a single self-assembled InAs quantum dot with ferromagnetic leads
Authors:
K. Hamaya,
S. Masubuchi,
M. Kawamura,
T. Machida,
M. Jung,
K. Shibata,
K. Hirakawa,
T. Taniyama,
S. Ishida,
Y. Arakawa
Abstract:
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
We have fabricated a lateral double barrier magnetic tunnel junction (MTJ) which consists of a single self-assembled InAs quantum dot (QD) with ferromagnetic Co leads. The MTJ shows clear hysteretic tunnel magnetoresistance (TMR) effect, which is evidence for spin transport through a single semiconductor QD. The TMR ratio and the curve shapes are varied by changing the gate voltage.
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Submitted 1 February, 2007; v1 submitted 9 November, 2006;
originally announced November 2006.
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Gate-controlled nuclear magnetic resonance in an AlGaAs/GaAs quantum Hall device
Authors:
S. Masubuchi,
K. Hamaya,
T. Machida
Abstract:
We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by…
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We study the resistively detected nuclear magnetic resonance (NMR) in an AlGaAs/GaAs quantum Hall device with a side gate. The strength of the hyperfine interaction between electron and nuclear spins is modulated by tuning a position of the two-dimensional electron systems with respect to the polarized nuclear spins using the side-gate voltages. The NMR frequency is systematically controlled by the gate-tuned technique in a semiconductor device.
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Submitted 10 August, 2006;
originally announced August 2006.
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Knight shift detection using gate-induced decoupling of the hyperfine interaction in quantum Hall edge channels
Authors:
S. Masubuchi,
K. Hamaya,
T. Machida
Abstract:
A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a compari…
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A method for the observation of the Knight shift in nanometer-scale region in semiconductors is developed using resistively detected nuclear magnetic resonance (RDNMR) technique in quantum Hall edge channels. Using a gate-induced decoupling of the hyperfine interaction between electron and nuclear spins, we obtain the RDNMR spectra with or without the electron-nuclear spin coupling. By a comparison of these two spectra, the values of the Knight shift can be given for the nuclear spins polarized dynamically in the region between the relevant edge channels in a single two-dimensional electron system, indicating that this method has a very high sensitivity compared to a conventional NMR technique.
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Submitted 3 July, 2006;
originally announced July 2006.
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Spin-dependent edge-channel transport in a Si/SiGe quantum Hall system
Authors:
K. Hamaya,
S. Masubuchi,
K. Hirakawa,
S. Ishida,
Y. Arakawa,
K. Sawano,
Y. Shiraki,
T. Machida
Abstract:
We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field d…
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We study the edge-channel transport of electrons in a high-mobility Si/SiGe two-dimensional electron system in the quantum Hall regime. By selectively populating the spin-resolved edge channels, we observe suppression of the scattering between two edge channels with spin-up and spin-down. In contrast, when the Zeeman splitting of the spin-resolved levels is enlarged with tilting magnetic field direction, the spin orientations of both the relevant edge channels are switched to spin-down, and the inter-edge-channel scattering is strongly promoted. The evident spin dependence of the adiabatic edge-channel transport is an individual feature in silicon-based two-dimensional electron systems, originating from a weak spin-orbit interaction.
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Submitted 16 March, 2006;
originally announced March 2006.
