-
Assessment of the (010) $β$-Ga$_2$O$_3$ Surface and Substrate Specification
Authors:
Michael A. Mastro,
Charles R. Eddy, Jr.,
Marko J. Tadjer,
Jennifer K. Hite,
Jihyun Kim,
Stephen J. Pearton
Abstract:
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O…
▽ More
Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide ($β$-Ga$_2$O$_3$) have led to the commercialization of large-area beta-Ga$_2$O$_3$ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metal-organic chemical vapor deposition (MOCVD), molecular beam epitaxy (MBE), and processing of the (010) $β$-Ga$_2$O$_3$ surface are known to form sub-nanometer scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a sub-nanometer-scale feature along the [001] direction. Additionally, the general crystal structure of $β$-Ga$_2$O$_3$ is presented and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.
△ Less
Submitted 8 May, 2021;
originally announced May 2021.
-
III-Nitride Nanowire Based Light Emitting Diodes on Carbon Paper
Authors:
Michael A. Mastro,
Travis J. Anderson,
Marko J. Tadjer,
Francis J. Kub,
Jennifer K. Hite,
Jihyun Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emittin…
▽ More
This article presents the use of flexible carbon substrates for the growth of III-nitride nanowire light emitters. A dense packing of gallium nitride nanowires were grown on a carbon paper substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the carbon paper. Strong photo- and electro-luminescence was observed from InGaN quantum well light emitting diode nanowires.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Nickel Foam as a Substrate for III-nitride Nanowire Growth
Authors:
Michael A. Mastro,
Neeraj Nepal,
Fritz Kub,
Jennifer K. Hite,
J. Kim,
Charles R. Eddy Jr
Abstract:
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane dire…
▽ More
This article presents the use of flexible metal foam substrates for the growth of III-nitride nanowire light emitters to tackle the inherent limitations of thin-film light emitting diodes as well as fabrication and application issues of traditional substrates. A dense packing of gallium nitride nanowires were grown on a nickel foam substrate. The nanowires grew predominantly along the a-plane direction, normal to the local surface of the nickel foam. Strong luminescence was observed from undoped GaN and InGaN quantum well light emitting diode nanowires.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Polarization and Space Charge Limited Current in III-Nitride Heterostructure Nanowires
Authors:
Michael A. Mastro,
Hong-Youl Kim,
Jaehui Ahn,
Blake Simpkins,
Pehr Pehrsson,
Jihyun Kim,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cr…
▽ More
An undoped AlGaN/GaN nanowire demonstrated p-type conductivity based solely on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this nanowire displayed a low-voltage transition from Ohmic to space charge limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross-section, which creates a doublet peak in the piezoelectric induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces as well as an interaction with the opposing polarization fields at two semi-polar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on configuration of the multi-layer structure, and is not amenable to an analytical model.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Plasmonically-Enhanced Emission from an Inverted GaN Light Emitting Diode
Authors:
Michael A. Mastro,
Byung-Jae Kim,
J. A. Freitas, Jr.,
Joshua D. Caldwell,
Ron Rendell,
Jennifer Hite,
Charles R. Eddy, Jr.,
Jihyun Kim
Abstract:
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avo…
▽ More
Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the near-bandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
Authors:
Michael A. Mastro,
Joshua D. Caldwell,
Ron T. Holm,
Rich L. Henry,
Charles R. Eddy Jr
Abstract:
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to e…
▽ More
A GaN resonant cavity light emitting diode was built on a GaN-AlN distributed Bragg reflector grown on a silicon substrate. The electroluminescence output increased by 2.5 times for a GaN diode coupled to a properly designed resonant cavity. Theoretical calculations showed that this enhancement could increase up to four times for transmission through a sem-transparent metal contact design, up to eight times for a flip-chip design
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
C. R. Eddy Jr.,
D. K. Gaskill,
R. L. Henry,
M. E. Twigg
Abstract:
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the t…
▽ More
Distributed Bragg reflectors (DBRs) composed of an AlN/AlGaN superlattice were grown of Si (111) substrates. The first high-reflectance III-nitride DBR on Si was achieved by growing the DBR directly on the Si substrate to enhance the overall reflectance due to the high index of refraction contrast at the Si/AlN interface. For a 9x DBR, the measured peak reflectance of 96.8% actually exceeded the theoretical value of 96.1%. The AlN/AlGaN superlattice served the added purpose of compensating the large tensile strain developed during the growth of a crack-free 500 nm GaN / 7x DBR / Si structure. This achievement opens the possibility to manufacture high-quality III-nitride optoelectronic devices without optical absorption in the opaque Si substrate.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
All Epitaxial Fabrication of a Nanowire Plasmon Laser Structure
Authors:
Michael A. Mastro,
Jaime A. Freitas,
Jennifer K. Hite,
Charles R. Eddy Jr
Abstract:
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
An all-epitaxial approach was demonstrated to create coaxial plasmon laser structures composed of an alumi-num plasmonic metal / SiNx dielectric / InGaN quantum well shell surrounding a p-GaN nanowire core. Strong UV lumi-nescence was observed from as-grown vertically-aligned arrays as well as horizontally-aligned nanowires transferred to a transparent carrier wafer.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Two-Dimensional Electron Gas as a Basis for Low-Loss Hyperbolic Metamaterials
Authors:
Michael A. Mastro
Abstract:
The implementation of hyperbolic metamaterials as component in optical waveguides, semiconductor light emitters and solar cells has been limited by the inherent loss in the metallic layers. The features of a hyperbolic metamaterial arise by the presence of alternating metal and a dielectric layers. This work proposes that the deleterious loss characteristic of metal-based hyperbolic metamaterials…
▽ More
The implementation of hyperbolic metamaterials as component in optical waveguides, semiconductor light emitters and solar cells has been limited by the inherent loss in the metallic layers. The features of a hyperbolic metamaterial arise by the presence of alternating metal and a dielectric layers. This work proposes that the deleterious loss characteristic of metal-based hyperbolic metamaterials can be minimized by employing a III-nitride superlattice wherein a two-dimensional electron gas (2DEG) functions as the metallic layer.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Ultra-Thin Absorber based on Phase Change Metamaterial Superlattice
Authors:
Michael A. Mastro,
Virginia D. Wheeler
Abstract:
In this paper, a superlattice VO2/SiO2 metamaterial on a lossy substrate is designed to create a near perfect absorber with tunability across the infrared spectrum. We selected VO2 as it presents a dielectric to metal-like phase change slightly above room temperature. Additionally, the slightly lossy nature of high-temperature VO2 presents comparable and small components (real and imaginary) of th…
▽ More
In this paper, a superlattice VO2/SiO2 metamaterial on a lossy substrate is designed to create a near perfect absorber with tunability across the infrared spectrum. We selected VO2 as it presents a dielectric to metal-like phase change slightly above room temperature. Additionally, the slightly lossy nature of high-temperature VO2 presents comparable and small components (real and imaginary) of the complex refractive index across portions of the visible and infrared. Coupled with a limited conductivity substrate, VO2 has been employed to create highly absorbing/emitting structures where the thickness of the VO2 is ultra-thin (t << lambda/4n). Nevertheless, metal-like VO2 does not possess comparable and small components of the complex refractive index across the entire infrared spectrum, which limits the universality of this ultra-thin VO2 absorber design. Here we employ an ultra-thin superlattice of VO2/SiO2 to create a composite metamaterial that is readily designed for high absorbance across the infrared spectrum.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Metalorganic chemical-vapor deposition of high-reflectance III-nitride distributed Bragg reflectors on Si substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
D. K. Gaskill,
J. C. Culbertson,
M. Fatemi,
C. R. Eddy Jr.,
R. L. Henry,
M. E. Twigg
Abstract:
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelect…
▽ More
High-reflectance group III-nitride distributed Bragg reflectors (DBRs) were deposited by MOCVD on Si (111) substrates. A reflectance greater than 96% was demonstrated for the first time for an AlN/GaN DBR with a stop-band centered in the blue-green range of the visible spectrum. Crack-free GaN cap layers were grown on the DBR structures to demonstrate the opportunity to build III-nitride optoelectronic devices in this material. The DBR structure was under significant strain due to growth on a mismatched substrate although the GaN cap layer was shown to be strain free.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Wurtzite III-nitride distributed Bragg reflectors on Si (100) substrates
Authors:
M. A. Mastro,
R. T. Holm,
N. D. Bassim,
C. R. Eddy, Jr.,
R. L. Henry,
M. E. Twigg,
A. Rosenberg
Abstract:
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented…
▽ More
Distributed Bragg reflectors (DBRs) composed of an AlN/GaN superlattice were demonstrated for the first time on Si (100) substrates. Single-crystal wurtzite superlattice structures were achieved on this cubic substrate by employing offcut Si (100) wafers with the surface normal pointing 4° towards the [110] direction. This misorientation introduced an additional epitaxial constraint that prevented the growth of a two-domain GaN surface as well as cubic GaN inclusions. A crack-free 600 nm GaN cap / 5x AlN / GaN DBR structure on Si (100) was demonstrated. This accomplishment of a wurtzite III-nitride DBRs on Si (100) opens the possibility to integrate novel optical and optoelectronic devices with established Si microelectronics technology.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Zinc Sulphide Overlayer Two-Dimensional Photonic Crystal for Enhanced Extraction of Light from a Micro Cavity Light-Emitting Diode
Authors:
Michael A. Mastro,
Chul Soo Kim,
Mi** Kim,
Josh Caldwell,
Ron T. Holm,
Igor Vurgaftman,
Jihyun Kim,
Charles R. Eddy Jr.,
Jerry R. Meyer
Abstract:
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lo…
▽ More
A two-dimensional (2D) ZnS photonic crystal was deposited on the surface of a one-dimensional (1D) III-nitride micro cavity light-emitting diode (LED), to intermix the light extraction features of both structures (1D+2D). The deposition of an ideal micro-cavity optical thickness of lambda/2 is impractical for III-nitride LEDs, and in realistic multi-mode devices a large fraction of the light is lost to internal refraction as guided light. Therefore, a 2D photonic crystal on the surface of the LED was used to diffract and thus redirect this guided light out of the semiconductor over several hundred microns. Additionally, the employment of a post-epitaxy ZnS 2D photonic crystal avoided the typical etching into the GaN:Mg contact layer, a procedure which can cause damage to the near surface.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Opportunities and Challenges in MOCVD of β-Ga2O3 for Power Electronic Devices
Authors:
M. A. Mastro,
J. K. Hite,
C. R. Eddy, Jr.,
M. J. Tadjer,
S. J. Pearton,
F. Ren,
J. Kim
Abstract:
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-…
▽ More
Recent breakthroughs in bulk crystal growth of beta-Ga2O3 by the edge-defined film-fed technique has led to the commercialization of large-area beta-Ga2O3 substrates. Standard epitaxy approaches are being utilized to develop various thin-film beta-Ga2O3 based devices including lateral transistors. This article will discuss the challenges for metal organic chemical vapor deposition (MOCVD) of beta-Ga2O3 and the design criteria for use of this material system in power electronic device structures.
△ Less
Submitted 2 September, 2020;
originally announced September 2020.
-
Technique for the Dry Transfer of Epitaxial Graphene onto Arbitrary Substrates
Authors:
Joshua D. Caldwell,
Travis J. Anderson,
James C. Culbertson,
Glenn G. Jernigan,
Karl D. Hobart,
Fritz J. Kub,
Marko J. Tadjer,
Joseph L. Tedesco,
Jennifer K. Hite,
Michael A. Mastro,
Rachael L. Myers-Ward,
Charles R. Eddy Jr.,
Paul M. Campbell,
D. Kurt Gaskill
Abstract:
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This pr…
▽ More
In order to make graphene technologically viable, the transfer of graphene films to substrates appropriate for specific applications is required. We demonstrate the dry transfer of epitaxial graphene (EG) from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using a thermal release tape. We further report on the impact of this process on the electrical properties of the EG films. This process enables EG films to be used in flexible electronic devices or as optically transparent contacts.
△ Less
Submitted 14 October, 2009;
originally announced October 2009.
