Octave-spanning supercontinuum generation in a CMOS-compatible thin Si3N4 waveguide coated with highly nonlinear TeO2
Authors:
Hamidu M. Mbonde,
Neetesh Singh,
Bruno L. Segat Frare,
Milan Sinobad,
Pooya Torab Ahmadi,
Batoul Hashemi,
Dawson. B. Bonneville,
Peter Mascher,
Franz X. Kaertner,
Jonathan D. B. Bradley
Abstract:
Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>~700 nm), which can lead to high stress and cracks unless…
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Supercontinuum generation (SCG) is an important nonlinear optical process enabling broadband light sources for many applications, for which silicon nitride(Si3N4) has emerged as a leading on-chip platform.To achieve suitable group velocity dispersion and high confinement for broadband SCG the Si3N4 waveguide layer used is typically thick (>~700 nm), which can lead to high stress and cracks unless specialized processing steps are used. Here, we report on efficient octave spanning SCG in a thinner moderate-confinement 400-nm Si3N4 platform using a highly nonlinear tellurium oxide (TeO2) coating. An octave-spanning supercontinuum is achieved at a low peak power of 258 W using a 100-fs laser centered at 1565 nm. Our numerical simulations agree well with the experimental results showing an increase of waveguide's nonlinear parameter by a factor of 2.5 when coating the Si3N4 waveguide with TeO2 film. This work demonstrates highly efficient SCG via effective dispersion engineering and an enhanced nonlinearity in a CMOS-compatible hybrid TeO2-Si3N4 waveguides and a promising route to monolithically integrated nonlinear, linear, and active functionalities on a single silicon photonic chip.
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Submitted 15 September, 2023;
originally announced September 2023.
Electrical conduction of silicon oxide containing silicon quantum dots
Authors:
X. D. Pi,
O. H. Y. Zalloum,
A. P. Knights,
P. Mascher,
P. J. Simpson
Abstract:
Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density…
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Current-voltage measurements have been made at room temperature on a Si-rich silicon oxide film deposited via Electron-Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition (ECR-PECVD) and annealed at 750 - 1000$ ^\circ$C. The thickness of oxide between Si quantum dots embedded in the film increases with the increase of annealing temperature. This leads to the decrease of current density as the annealing temperature is increased. Assuming the Fowler-Nordheim tunneling mechanism in large electric fields, we obtain an effective barrier height $φ_{eff}$ of $\sim$ 0.7 $\pm$ 0.1 eV for an electron tunnelling through an oxide layer between Si quantum dots. The Frenkel-Poole effect can also be used to adequately explain the electrical conduction of the film under the influence of large electric fields. We suggest that at room temperature Si quantum dots can be regarded as traps that capture and emit electrons by means of tunneling.
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Submitted 2 April, 2006;
originally announced April 2006.
