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Good practice guide on the graphene-based AC-QHE realization of the farad
Authors:
Luca Callegaro,
Stephan Bauer,
Blaise Jeanneret,
Mattias Kruskopf,
Martina Marzano,
Massimo Ortolano,
Frederic Overney
Abstract:
This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The gu…
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This Good Practice Guide provides information for the realization of the farad from the quantum Hall resistance in graphene devices by using digital impedance bridges. The fabrication and characterization of graphene quantum Hall effect devices, the cryogenic environment required to achieve the quantization conditions, the digital impedance bridges and calibration procedures are reported.
The guide is a deliverable of the Joint Research Project EMPIR 18SIB07 GIQS: Graphene Impedance Quantum Standard. This project received funding from the European Metrology Programme for Innovation and Research (EMPIR) co-financed by the Participating States and from the European Unions' Horizon 2020 research and innovation programme. Funder ID: 10.13039/100014132 , Grant no: 18SIB07.
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Submitted 10 May, 2022;
originally announced May 2022.
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Large-scale five- and seven-junction epitaxial graphene devices
Authors:
Dinesh Patel,
Martina Marzano,
Chieh-I Liu,
Heather M. Hill,
Mattias Kruskopf,
Hanbyul **,
Jiuning Hu,
David B. Newell,
Chi-Te Liang,
Randolph Elmquist,
Albert F. Rigosi
Abstract:
The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the anal…
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The utilization of multiple current terminals on millimeter-scale graphene p-n junction devices has enabled the measurement of many atypical, fractional multiples of the quantized Hall resistance at the i=2 plateau. These fractions take the form a/b R_H and can be determined both analytically and by simulations. These experiments validate the use of either the LTspice circuit simulator or the analytical framework recently presented in similar work. Furthermore, the production of several devices with large-scale junctions substantiates the approach of using simple ultraviolet lithography to obtain junctions of sufficient sharpness.
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Submitted 26 March, 2022; v1 submitted 12 March, 2022;
originally announced March 2022.
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Fabrication of quantum Hall p-n junction checkerboards
Authors:
Dinesh K. Patel,
Martina Marzano,
Chieh-I Liu,
Mattias Kruskopf,
Randolph E. Elmquist,
Chi-Te Liang,
Albert F. Rigosi
Abstract:
Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically…
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Measurements of fractional multiples of the ν=2 plateau quantized Hall resistance (R_H {\approx} 12906 Ω) were enabled by the utilization of multiple current terminals on millimetre-scale graphene p-n junction devices fabricated with interfaces along both lateral directions. These quantum Hall resistance checkerboard devices have been demonstrated to match quantized resistance outputs numerically calculated with the LTspice circuit simulator. From the devices' functionality, more complex embodiments of the quantum Hall resistance checkerboard were simulated to highlight the parameter space within which these devices could operate. Moreover, these measurements suggest that the scalability of p-n junction fabrication on millimetre or centimetre scales is feasible with regards to graphene device manufacturing by using the far more efficient process of standard ultraviolet lithography.
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Submitted 12 March, 2022;
originally announced March 2022.
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Quantum Hall $p-n$ Junction Dartboards Using Graphene Annuli
Authors:
Chieh-I Liu,
Dinesh K. Patel,
Martina Marzano,
Mattias Kruskopf,
Heather M. Hill,
Albert F. Rigosi
Abstract:
The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with th…
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The use of multiple current terminals on millimeter-scale graphene $p-n$ junction devices fabricated with Corbino geometries, or quantum Hall resistance dartboards, have enabled the measurement of several fractional multiples of the quantized Hall resistance at the $ν=2$ plateau ($R_H\approx 12906 Ω$). Experimentally obtained values agreed with corresponding numerical simulations performed with the LTspice circuit simulator. More complicated designs of the quantum Hall resistance dartboard were simulated to establish the potential parameter space within which these Corbino-type devices could output resistance. Most importantly, these measurements support simpler processes of ultraviolet lithography as a more efficient means of scaling up graphene-based device sizes while maintaining sufficiently narrow junctions.
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Submitted 24 January, 2022;
originally announced January 2022.
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Nonconventional Quantized Hall Resistances Obtained with $ν= 2$ Equilibration in Epitaxial Graphene $p-n$ Junctions
Authors:
Albert F. Rigosi,
Dinesh Patel,
Martina Marzano,
Mattias Kruskopf,
Heather M. Hill,
Hanbyul **,
Jiuning Hu,
Angela R. Hight Walker,
Massimo Ortolano,
Luca Callegaro,
Chi-Te Liang,
David B. Newell
Abstract:
We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantize…
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We have demonstrated the millimeter-scale fabrication of monolayer epitaxial graphene $p-n$ junction devices using simple ultraviolet photolithography, thereby significantly reducing device processing time compared to that of electron beam lithography typically used for obtaining sharp junctions. This work presents measurements yielding nonconventional, fractional multiples of the typical quantized Hall resistance at $ν=2$ ($R_H\approx 12906 Ω$) that take the form: $\frac{a}{b}R_H$. Here, $a$ and $b$ have been observed to take on values such 1, 2, 3, and 5 to form various coefficients of $R_H$. Additionally, we provide a framework for exploring future device configurations using the LTspice circuit simulator as a guide to understand the abundance of available fractions one may be able to measure. These results support the potential for drastically simplifying device processing time and may be used for many other two-dimensional materials.
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Submitted 24 January, 2022;
originally announced January 2022.
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Algorithm for constructing customized quantized resistances in graphene $p-n$ junctions
Authors:
Albert F. Rigosi,
Martina Marzano,
Antonio Levy,
Heather M. Hill,
Dinesh K. Patel,
Mattias Kruskopf,
Hanbyul **,
Randolph E. Elmquist,
David B. Newell
Abstract:
An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form:…
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An algorithm is introduced for predicting quantized resistances in graphene p-n junction devices that utilize more than a single entry and exit point for electron flow. Depending on the configuration of an arbitrary number of terminals, electrical measurements yield fractional multiples of the typical quantized Hall resistance at the $ν=2$ plateau $R_H \approx 12906 Ω$ and take the form: $\frac{a}{b}R_H$. This theoretical formulation is independent of material, and applications to other material systems that exhibit quantum Hall behaviors are to be expected. Furthermore, this formulation is supported with experimental data from graphene-based devices with multiple source and drain terminals.
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Submitted 20 January, 2022;
originally announced January 2022.
