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Signatures of pressure-enhanced helimagnetic order in van der Waals multiferroic NiI$_2$
Authors:
Connor A. Occhialini,
Luiz G. P. Martins,
Qian Song,
Jesse S. Smith,
Jesse Kapeghian,
Danila Amoroso,
Joshua J. Sanchez,
Paolo Barone,
Bertrand Dupé,
Matthieu j. Verstraete,
**g Kong,
Antia S. Botana,
Riccardo Comin
Abstract:
The van der Waals (vdW) type-II multiferroic NiI$_2$ has emerged as a candidate for exploring non-collinear magnetism and magnetoelectric effects in the 2D limit. Frustrated intralayer exchange interactions on a triangular lattice result in a helimagnetic ground state, with spin-induced improper ferroelectricity stabilized by the interlayer interactions. Here we investigate the magnetic and struct…
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The van der Waals (vdW) type-II multiferroic NiI$_2$ has emerged as a candidate for exploring non-collinear magnetism and magnetoelectric effects in the 2D limit. Frustrated intralayer exchange interactions on a triangular lattice result in a helimagnetic ground state, with spin-induced improper ferroelectricity stabilized by the interlayer interactions. Here we investigate the magnetic and structural phase transitions in bulk NiI$_2$, using high-pressure Raman spectroscopy, optical linear dichroism, and x-ray diffraction. We obtain evidence for a significant pressure enhancement of the antiferromagnetic and helimagnetic transition temperatures, at rates of $\sim15.3/14.4$ K/GPa, respectively. These enhancements are attributed to a cooperative effect of pressure-enhanced interlayer and third-nearest-neighbor intralayer exchange. These results reveal a general path for obtaining high-temperature type-II multiferroicity via high pressures in vdW materials.
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Submitted 20 June, 2023;
originally announced June 2023.
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Effects of Pressure on the Electronic and Magnetic Properties of Bulk NiI$_{2}$
Authors:
Jesse Kapeghian,
Danila Amoroso,
Connor A. Occhialini,
Luiz G. P. Martins,
Qian Song,
Jesse S. Smith,
Joshua J. Sanchez,
**g Kong,
Riccardo Comin,
Paolo Barone,
Bertrand Dupé,
Matthieu J. Verstraete,
Antia S. Botana
Abstract:
Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI$_{2}$ is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagn…
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Transition metal dihalides have recently garnered interest in the context of two-dimensional van der Waals magnets as their underlying geometrically frustrated triangular lattice leads to interesting competing exchange interactions. In particular, NiI$_{2}$ is a magnetic semiconductor that has been long known for its exotic helimagnetism in the bulk. Recent experiments have shown that the helimagnetic state survives down to the monolayer limit with a layer-dependent magnetic transition temperature that suggests a relevant role of the interlayer coupling. Here, we explore the effects of hydrostatic pressure as a means to enhance this interlayer exchange and ultimately tune the electronic and magnetic response of NiI$_{2}$. We study first the evolution of the structural parameters as a function of external pressure using first-principles calculations combined with x-ray diffraction measurements. We then examine the evolution of the electronic structure and magnetic exchange interactions via first-principles calculations and Monte Carlo simulations. We find that the leading interlayer coupling is an antiferromagnetic second-nearest neighbor interaction that increases monotonically with pressure. The ratio between isotropic third- and first-nearest neighbor intralayer exchanges, which controls the magnetic frustration and determines the magnetic propagation vector $\mathbf{q}$ of the helimagnetic ground state, is also enhanced by pressure. As a consequence, our Monte Carlo simulations show a monotonic increase in the magnetic transition temperature, indicating that pressure is an effective means to tune the magnetic response of NiI$_{2}$.
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Submitted 7 June, 2023;
originally announced June 2023.
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Strain-modulated anisotropic electronic structure in superconducting RuO$_2$ films
Authors:
Connor A. Occhialini,
Luiz G. P. Martins,
Shiyu Fan,
Valentina Bisogni,
Takahiro Yasunami,
Maki Musashi,
Masashi Kawasaki,
Masaki Uchida,
Riccardo Comin,
Jonathan Pelliciari
Abstract:
The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxy…
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The binary ruthenate, RuO$_2$, has been the subject of intense interest due to its itinerant antiferromagnetism and strain-induced superconductivity. The strain mechanism and its effect on the microscopic electronic states leading to the normal and superconducting state, however, remain undisclosed. Here, we investigate highly-strained epitaxial (110) RuO$_2$ films using polarization-dependent oxygen K-edge X-ray absorption spectroscopy (XAS). Through the detection of pre-edge peaks, arising from O:$2p$ - Ru:$4d$ hybridization, we uncover the effects of epitaxial strain on the orbital/electronic structure near the Fermi level. Our data show robust strain-induced shifts of orbital levels and a reduction of hybridization strength. Furthermore, we reveal a pronounced in-plane anisotropy of the electronic structure along the $[110]/[1\bar{1}0]$ directions naturally stemming from the symmetry-breaking epitaxial strain of the substrate. The $B_{2g}$ symmetry component of the epitaxially-enforced strain breaks a sublattice degeneracy, resulting in an increase of the density of states at the Fermi level ($E_F$), possibly paving the way to superconductivity. These results underscore the importance of the effective reduction from tetragonal to orthorhombic lattice symmetry in (110) RuO$_2$ films and its relevance towards the superconducting and magnetic properties.
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Submitted 1 August, 2022;
originally announced August 2022.
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Evidence for a pressure-induced phase transition of few-layer graphene to 2D diamond
Authors:
Luiz G. Pimenta Martins,
Diego L. Silva,
Jesse S. Smith,
Ang-Yu Lu,
Cong Su,
Marek Hempel,
Connor Occhialini,
Xiang Ji,
Ricardo Pablo,
Rafael S. Alencar,
Alan C. R. Souza,
Alan B. de Oliveira,
Ronaldo J. C. Batista,
Tomás Palacios,
Matheus J. S. Matos,
Mário S. C. Mazzoni,
Riccardo Comin,
**g Kong,
Luiz G. Cançado
Abstract:
We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrat…
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We unveil the diamondization mechanism of few-layer graphene compressed in the presence of water, providing robust evidence for the pressure-induced formation of 2D diamond. High-pressure Raman spectroscopy provides evidence of a phase transition occurring in the range of 4-7 GPa for 5-layer graphene and graphite. The pressure-induced phase is partially transparent and indents the silicon substrate. Our combined theoretical and experimental results indicate a gradual top-bottom diamondization mechanism, consistent with the formation of diamondene, a 2D ferromagnetic semiconductor. High-pressure x-ray diffraction on graphene indicates the formation of hexagonal diamond, consistent with the bulk limit of eclipsed-conformed diamondene.
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Submitted 16 October, 2019; v1 submitted 3 October, 2019;
originally announced October 2019.
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Structural analysis of polycrystalline graphene systems by Raman spectroscopy
Authors:
J. Ribeiro-Soares,
M. E. Oliveros,
C. Garin,
M. V. David,
L. G. P. Martins,
C. A. Almeida,
E. H. Martins-Ferreira,
K. Takai,
T. Enoki,
R. Magalhães-Paniago,
A. Malachias,
A. Jorio,
B. S. Archanjo,
C. A. Achete,
L. G. Cançado
Abstract:
A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction…
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A theoretical model supported by experimental results explains the dependence of the Raman scattering signal on the evolution of structural parameters along the amorphization trajectory of polycrystalline graphene systems. Four parameters rule the scattering efficiencies, two structural and two related to the scattering dynamics. With the crystallite sizes previously defined from X-ray diffraction and microscopy experiments, the three other parameters (the average grain boundaries width, the phonon coherence length, and the electron coherence length) are extracted from the Raman data with the geometrical model proposed here. The broadly used intensity ratio between the C-C stretching (G band) and the defect-induced (D band) modes can be used to measure crystallite sizes only for samples with sizes larger than the phonon coherence length, which is found equal to 32 nm. The Raman linewidth of the G band is ideal to characterize the crystallite sizes below the phonon coherence length, down to the average grain boundaries width, which is found to be 2.8 nm. "Ready-to-use" equations to determine the crystallite dimensions based on Raman spectroscopy data are given.
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Submitted 20 November, 2015;
originally announced November 2015.
