-
Canalization-based super-resolution imaging using a single van der Waals layer
Authors:
Jiahua Duan,
Aitana Tarazaga Martin-Luengo,
Christian Lanza,
Stefan Partel,
Kirill Voronin,
Ana Isabel F. Tresguerres-Mata,
Gonzalo Álvarez-Pérez,
Alexey Y. Nikitin,
J. Martín-Sánchez,
P. Alonso-González
Abstract:
Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interact…
▽ More
Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interactions at the nanoscale. However, despite this finding, applications based on polariton canalization have remained elusive so far, which can be explained by the complex sample fabrication of twisted stacks. In this work, we introduce a novel canalization phenomenon, arising in a single vdW thin layer (alpha-MoO3) when it is interfaced with a substrate exhibiting a given negative permittivity, that allows us to demonstrate a proof-of-concept application based on polariton canalization: super-resolution (up to ~λ0/220) nanoimaging. Importantly, we find that canalization-based imaging transcends conventional projection constraints, allowing the super-resolution images to be obtained at any desired location in the image plane. This versatility stems from the synergetic manipulation of three distinct parameters: incident frequency, rotation angle of the thin vdW layer, and thickness. These results provide valuable insights into the fundamental properties of canalization and constitute a seminal step towards multifaceted photonic applications, encompassing imaging, data transmission, and ultra-compact photonic integration.
△ Less
Submitted 23 April, 2024;
originally announced April 2024.
-
Unidirectional Ray Polaritons in Twisted Asymmetric Stacks
Authors:
J. Álvarez-Cuervo,
M. Obst,
S. Dixit,
G. Carini,
A. I. F. Tresguerres-Mata,
C. Lanza,
E. Terán-García,
G. Álvarez-Pérez,
L. Fernández-Álvarez,
K. Diaz-Granados,
R. Kowalski,
A. S. Senerath,
N. S. Mueller,
L. Herrer,
J. M. De Teresa,
S. Wasserroth,
J. M. Klopf,
T. Beechem,
M. Wolf,
L. M. Eng,
T. G. Folland,
A. Tarazaga Martín-Luengo,
J. Martín-Sánchez,
S. C. Kehr,
A. Y. Nikitin
, et al. (3 additional authors not shown)
Abstract:
The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon…
▽ More
The emergence of a vast repository of van der Waals (vdW) materials supporting polaritons - light coupled to matter excitations - offers a plethora of different possibilities to tailor electromagnetic waves at the subwavelength-scale. In particular, the development of twistoptics - the study of the optical properties of twisted stacks of vdW materials - allows the directional propagation of phonon polaritons (PhPs) along a single spatial direction, which has been coined as canalization. Here we demonstrate a complementary type of nanoscale unidirectional propagation that naturally emerges thanks to twistoptics: unidirectional ray polaritons (URPs). This natural phenomenon arises in two types of twisted hyperbolic stacks: homostructures of $α$-MoO$_3$ and heterostructures of $α$-MoO$_3$ and $β$-Ga$_2$O$_3$, each with very different thicknesses of its constituents. URPs are characterized by the absence of diffraction and the presence of a single phase of the propagating field. Importantly, we demonstrate that this ray behavior can be tuned by means of both relative twist angle and illumination frequency variations. Additionally, an unprecedented "pinwheel-like" propagation emerges at specific twist angles of the homostructure. We show that URPs emerge due to the twist between asymmetrically stacked biaxial slabs, while the shear effect in monoclinic $β$-Ga$_2$O$_3$ is of minor importance. Our findings demonstrate a natural way to excite unidirectional ray-like PhPs and offer a unique platform for controlling the propagation of PhPs at the nanoscale with many potential applications like nanoimaging, (bio)-sensing or polaritonic thermal management.
△ Less
Submitted 25 April, 2024; v1 submitted 27 March, 2024;
originally announced March 2024.
-
Multiple and spectrally robust photonic magic angles in reconfigurable α-MoO3 trilayers
Authors:
J. Duan,
G. Álvarez-Pérez,
C. Lanza,
A. I. F. Tresguerres-Mata,
K. Voronin,
N. Capote-Robayna,
A. Tarazaga Martín-Luengo,
J. Martín-Sánchez,
V. S. Volkov,
A. Y. Nikitin,
P. Alonso-González
Abstract:
The assembling of twisted stacks of van der Waals (vdW) materials had led to the discovery of a profusion of remarkable physical phenomena in recent years, as it provides a means to accurately control and harness electronic band structures. This has given birth to the so-called field of twistronics. An analogous concept has been developed for highly confined polaritons, or nanolight, in twisted bi…
▽ More
The assembling of twisted stacks of van der Waals (vdW) materials had led to the discovery of a profusion of remarkable physical phenomena in recent years, as it provides a means to accurately control and harness electronic band structures. This has given birth to the so-called field of twistronics. An analogous concept has been developed for highly confined polaritons, or nanolight, in twisted bilayers of strongly anisotropic vdW materials, extending the field to the twistoptics realm. In this case, the emergence of a topological transition of the polaritonic dispersion at a given twist angle (photonic magic angle) results in the propagation of nanolight along one specific direction (canalization regime), holding promises for unprecedented control of the flow of energy at the nanoscale. However, there is a fundamental limitation in twistoptics that critically impedes such control: there is only one photonic magic angle (and thus canalization direction) in a twisted bilayer and it is fixed for each incident frequency. Here, we overcome this limitation by demonstrating the existence of multiple spectrally robust photonic magic angles in reconfigurable twisted vdW trilayers. As a result, we show that canalization of nanolight can be programmed at will along any desired in-plane direction in a single device, and, importantly, within broad spectral ranges of up to 70 cm-1. Our findings lay the foundation for robust and widely tunable twistoptics, opening the door for applications in nanophotonics where on-demand control of energy at the nanoscale is crucial, such as thermal management, nanoimaging or entanglement of quantum emitters.
△ Less
Submitted 7 November, 2023;
originally announced November 2023.
-
Highly oriented EuO nanocrystalline films via reduction process - NIR optical response
Authors:
Antonio Mariscal,
Adrián Quesada,
Aitana Tarazaga Martín-Luengo,
Miguel Ángel García,
Alberta Bonanni,
José Fernández,
Rosalia Serna
Abstract:
Nanocrystalline textured EuO thin films are prepared by an oxygen loss process from a pure Eu2O3 bulk ceramic target through pulsed laser deposition in vacuum at room temperature. X-ray diffraction spectra evidence a well-defined diffraction peak corresponding to the EuO phase textured along the (110) direction. Analysis of the XRD peak profile indicates that the films are nanocrystalline (average…
▽ More
Nanocrystalline textured EuO thin films are prepared by an oxygen loss process from a pure Eu2O3 bulk ceramic target through pulsed laser deposition in vacuum at room temperature. X-ray diffraction spectra evidence a well-defined diffraction peak corresponding to the EuO phase textured along the (110) direction. Analysis of the XRD peak profile indicates that the films are nanocrystalline (average crystallite size of 11 nm) with a compressive residual strain. The formation of stoichiometric EuO is further confirmed by a strong signal from Eu2+ in the X-ray photoelectron spectra. The complex refractive index in the near infrared has been determined by spectroscopic ellipsometry and shows that the EuO films have a high transparency (k < 10-3) and a refractive index of 2.1. A band-gap shift of 0.25 eV is found with respect to the EuO bulk. These films, deposited by an accessible and efficient method, open a new route to produce EuO films with optical quality, suitable for NIR optoelectronic components.
△ Less
Submitted 31 October, 2018; v1 submitted 26 June, 2017;
originally announced June 2017.
-
Effects of Dielectric Stoichiometry on the Photoluminescence Properties of Encapsulated WSe2 Monolayers
Authors:
Javier Martín-Sánchez,
Antonio Mariscal,
Marta De Luca,
Aitana Tarazaga Martín-Luengo,
Georg Gramse,
Alma Halilovic,
Rosalía Serna,
Alberta Bonanni,
Ilaria Zardo,
Rinaldo Trotta,
Armando Rastelli
Abstract:
Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the d…
▽ More
Two-dimensional transition-metal-dichalcogenide semiconductors have emerged as promising candidates for optoelectronic devices with unprecedented properties and ultra-compact performances. However atomically thin materials are highly sensitive to surrounding dielectric media, which imposes severe limitations to their practical applicability. Hence for their suitable integration into devices, the development of reliable encapsulation procedures that preserve their physical properties are required. Here, the excitonic photoluminescence of WSe2 monolayer flakes is assessed, at room temperature and 10 K, on mechanically exfoliated flakes encapsulated with SiOx and AlxOy layers employing chemical and physical deposition techniques. Conformal flakes coating on untreated - non-functionalized - flakes is successfully demonstrated by all the techniques except for atomic layer deposition, where a cluster-like oxide coating is observed. No significant compositional or strain state changes in the flakes are detected upon encapsulation by any of the techniques. Remarkably, our results evidence that the flakes' optical emission is strongly influenced by the quality of the encapsulating oxide - stoichiometry -. When the encapsulation is carried out with slightly sub-stoichiometric oxides two remarkable phenomena are observed. First, there is a clear electrical do** of the monolayers that is revealed through a dominant trion - charged exciton - room-temperature photoluminescence. Second, a strong decrease of the monolayers optical emission is measured attributed to non-radiative recombination processes and/or carriers transfer from the flake to the oxide. Power- and temperature-dependent photoluminescence measurements further confirm that stoichiometric oxides obtained by physical deposition lead to a successful encapsulation.
△ Less
Submitted 17 April, 2017; v1 submitted 17 March, 2017;
originally announced March 2017.
-
Effects of processing on the stability of molybdenum oxide ultra-thin films
Authors:
Aitana Tarazaga Martín-Luengo,
Harald Köstenbauer,
Jörg Winkler,
Alberta Bonanni
Abstract:
The effects of wet chemical processing conventionally employed in device fabrication standards are systematically studied on molybdenum oxide (MoOx) ultra-thin films. We have combined x-ray photoelectron spectroscopy (XPS), angle resolved XPS and x-ray reflectivity techniques to provide deep insights into the changes in composition, structure and electronic states upon treatment of films with diff…
▽ More
The effects of wet chemical processing conventionally employed in device fabrication standards are systematically studied on molybdenum oxide (MoOx) ultra-thin films. We have combined x-ray photoelectron spectroscopy (XPS), angle resolved XPS and x-ray reflectivity techniques to provide deep insights into the changes in composition, structure and electronic states upon treatment of films with different initial stoichiometry prepared by reactive sputtering. Our results show significant reduction effects associated with the development of gap states in MoOx, as well as changes in the composition, density and structure of the films, systematically correlated with the initial oxidation state of Mo.
△ Less
Submitted 26 September, 2016;
originally announced September 2016.
-
All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared
Authors:
G. Capuzzo,
D. Kysylychyn,
R. Adhikari,
T. Li,
B. Faina,
A. Tarazaga Martín-Luengo,
A. Bonanni
Abstract:
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established,…
▽ More
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.
△ Less
Submitted 25 August, 2016;
originally announced August 2016.
-
Rashba semiconductor as spin Hall material: Experimental demonstration of spin pum** in wurtzite $n$-GaN:Si
Authors:
R. Adhikari,
M. Matzer,
A. Tarazaga Martín-Luengo,
A. Bonanni
Abstract:
Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and rel…
▽ More
Pure spin currents in semiconductors are essential for implementation in the next generation of spintronic elements. Heterostructures of III- nitride semiconductors are currently employed as central building-blocks for lighting and high-power devices. Moreover, the long relaxation times and the spin-orbit coupling (SOC) in these materials indicate them as privileged hosts for spin currents and related phenomena. Spin pum** is an efficient mechanism for the inception of spin current and its conversion into charge current in non-magnetic metals and semiconductors with Rashba SOC $via$ spin Hall effects. We report on the generation in $n$-GaN:Si\,--\,at room temperature and through spin pum**\,--\,of pure spin current, fundamental for the understanding of the spin dynamics in these non-centrosymmetric Rashba systems. We find for $n$-GaN:Si a spin Hall angle $θ_{\mathrm{SH}}$=$3.03\times10^{-3}$, exceeding by one order of magnitude those reported for other semiconductors, pointing at III-nitrides as particularly efficient spin current generators.
△ Less
Submitted 21 March, 2016;
originally announced March 2016.
