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Effects of inorganic seed promoters on MoS2 few-layers grown via chemical vapor deposition
Authors:
Alessandro Cataldo,
Pinaka Pani Tummala,
Christian Martella,
Carlo Spartaco Casari,
Alessandro Molle,
Alessio Lamperti
Abstract:
In the last years, transition metal dichalcogenides (TMDs), especially at the two-dimensional (2D) limit, gained a large interest due to their unique optical and electronic properties. Among them, MoS2 received great attention from the scientific community due to its versatility, workability, and applicability in a large number of fields such as electronics, optoelectronics and electrocatalysis. T…
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In the last years, transition metal dichalcogenides (TMDs), especially at the two-dimensional (2D) limit, gained a large interest due to their unique optical and electronic properties. Among them, MoS2 received great attention from the scientific community due to its versatility, workability, and applicability in a large number of fields such as electronics, optoelectronics and electrocatalysis. To open the possibility of 2D-MoS2 exploitation, its synthesis over large macroscopic areas using cost-effective methods is fundamental. In this study, we report a method for the synthesis of large-area (~ cm2) few-layers MoS2 via liquid precursor CVD (L-CVD), where the Mo precursor (i.e. ammonium heptamolybdate AHM) is provided via a solution that is spin-coated over the substrate. Given the capability of organic and inorganic molecules, such as alkaline salts, to enhance MoS2 growth, we investigated the action of different inorganic salts as seed promoters. In particular, by using visible Raman spectroscopy, we focused on the effect of Na(OH), KCl, KI, and Li(OH) on the thickness, morphology, uniformity and degree of coverage of the grown MoS2. We optimized the process tuning parameters such as the volume of spin-coated solution, the growth temperature, and the seed promoter concentration, to synthesise the lowest possible thickness which resulted to be 2 layers (2L) of the highest quality. We witnessed that the addition of an inorganic seed promoter in the solution improves the extension of the grown MoS2 promoting lateral growth front, and therefore the degree of coverage. From this study, we conclude that, amongst the investigated seed promoters, K-based salts proved to grant the growth of high-quality two-layer MoS2 with optimal and uniform coverage of the SiO2/Si substrate surface.
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Submitted 23 October, 2023;
originally announced October 2023.
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Tailoring the Dimensionality of Tellurium Nanostructures via Vapor Transport Growth
Authors:
Sara Ghomi,
Pinaka Pani Tummala,
Raimondo Cecchini,
Carlo S. Casari,
Alessio Lamperti,
Carlo Grazianetti,
Christian Martella,
Alessandro Molle
Abstract:
The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-l…
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The interest in tellurium nanostructures is on the rise due to their outstanding physical properties including high carrier mobility, anisotropic charge conduction, photoconductivity, thermoelectricity, and piezoelectricity. Applications in related technologies require tailoring the synthesis of tellurium from its preferred vertical growth toward the lateral growth. Here, the synthesis of pillar-like and pennette-like structures of tellurium through a powder vapor deposition technique has been discussed. It has been shown that exploiting salt additives such as NaCl in vapor deposition technique can enhance tellurium pillar dimensionality toward large planar grains. Further, we report on the synthesis of hexagonal ultrathin tellurium nanoflakes, namely tellurene, from few-layer to monolayer thickness by optimizing the growth kinetics without the usage of any additives. In addition, we explore the surface quality and physical properties of as-grown two-dimensional (2D) tellurium, using a variety of characterization techniques, including Raman spectroscopy, scanning electron microscopy, atomic force microscopy, and Kelvin probe force microscopy. This study provides a pivotal scheme for enabling scalable 2D tellurium integration in numerous potential applications for electronics and optoelectronic devices.
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Submitted 18 September, 2023; v1 submitted 19 July, 2023;
originally announced July 2023.
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Vapor phase epitaxy of antimonene-like nanocrystals on germanium by an MOCVD process
Authors:
Raimondo Cecchini,
Christian Martella,
Claudia Wiemer,
Alessio Lamperti,
Alberto Debernardi,
Lucia Nasi,
Laura Lazzarini,
Alessandro Molle,
Massimo Longo
Abstract:
Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However…
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Synthetic two-dimensional (2D) mono-elemental crystals, namely X-enes, have recently emerged as a new frontier for atomically thin nanomaterials with on-demand properties. Among X-enes, antimonene, the \b{eta}-phase allotrope of antimony, is formed by atoms arranged in buckled hexagonal rings bearing a comparatively higher environmental stability with respect to other players of this kind. However, the exploitation of monolayer or few-layer antimonene and other 2D materials in novel opto-electronic devices is still hurdled by the lack of scalable processes. Here, we demonstrated the viability of a bottom-up process for the epitaxial growth of antimonene-like nanocrystals (ANCs), based on a Metal-Organic Chemical Vapor Deposition (MOCVD) process, assisted by gold nanoparticles (Au NPs) on commensurate (111)-terminated Ge surfaces. The growth mechanism was investigated by large- and local-area microstructural analysis, revealing that the etching of germanium, catalyzed by the Au NPs, led to the ANCs growth on the exposed Ge (111) planes. As a supportive picture, ab-initio calculations rationalized this epitaxial relationship in terms of compressively strained \b{eta}-phase ANCs. Our process could pave the way to the realization of large-area antimonene layers by a deposition process compatible with the current semiconductor manufacturing technology.
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Submitted 15 July, 2023;
originally announced July 2023.
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Optical properties of two-dimensional tin nanosheets epitaxially grown on graphene
Authors:
Eleonora Bonaventura,
Christian Martella,
Salvatore Macis,
Daya S. Dhungana,
Simonas Krotkus,
Michael Heuken,
Stefano Lupi,
Alessandro Molle,
Carlo Grazianetti
Abstract:
Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited gra…
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Heterostacks formed by combining two-dimensional materials show novel properties which are of great interest for new applications in electronics, photonics and even twistronics, the new emerging field born after the outstanding discoveries on twisted graphene. Here, we report the direct growth of tin nanosheets at the two-dimensional limit via molecular beam epitaxy on chemical vapor deposited graphene on Al2O3(0001). The mutual interaction between the tin nanosheets and graphene is evidenced by structural and chemical investigations. On the one hand, Raman spectroscopy indicates that graphene undergoes compressive strain after the tin growth, while no charge transfer is observed. On the other hand, chemical analysis shows that tin nanosheets interaction with sapphire is mediated by graphene avoiding the tin oxidation occurring in the direct growth on this substrate. Remarkably, optical measurements show that the absorption of tin nanosheets show a graphene-like behavior with a strong absorption in the ultraviolet photon energy range, therein resulting in a different optical response compared to tin nanosheets on bare sapphire. The optical properties of tin nanosheets therefore represent an open and flexible playground for the absorption of light in a broad range of the electromagnetic spectrum and technologically relevant applications for photon harvesting and sensors.
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Submitted 13 June, 2023;
originally announced June 2023.
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Automated Lane Detection in Crowds using Proximity Graphs
Authors:
Stijn Heldens,
Claudio Martella,
Nelly Litvak,
Maarten van Steen
Abstract:
Studying the behavior of crowds is vital for understanding and predicting human interactions in public areas. Research has shown that, under certain conditions, large groups of people can form collective behavior patterns: local interactions between individuals results in global movements patterns. To detect these patterns in a crowd, we assume each person is carrying an on-body device that acts a…
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Studying the behavior of crowds is vital for understanding and predicting human interactions in public areas. Research has shown that, under certain conditions, large groups of people can form collective behavior patterns: local interactions between individuals results in global movements patterns. To detect these patterns in a crowd, we assume each person is carrying an on-body device that acts a local proximity sensor, e.g., smartphone or bluetooth badge, and represent the texture of the crowd as a proximity graph. Our goal is extract information about crowds from these proximity graphs. In this work, we focus on one particular type of pattern: lane formation. We present a formal definition of a lane, proposed a simple probabilistic model that simulates lanes moving through a stationary crowd, and present an automated lane-detection method. Our preliminary results show that our method is able to detect lanes of different shapes and sizes. We see our work as an initial step towards rich pattern recognition using proximity graphs.
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Submitted 6 July, 2017;
originally announced July 2017.
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Structural, Chemical and Optical Properties of Cerium Dioxide Film Prepared by Atomic Layer Deposition on TiN and Si Substrates
Authors:
S. Vangelista,
R. Piagge,
S. Ek,
T. Sarnet,
G. Ghidini,
C. Martella,
A. Lamperti
Abstract:
Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 °C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films dif…
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Thin films of cerium dioxide (CeO2) were deposited by atomic layer deposition (ALD) at 250 °C on both Si and TiN substrates. The ALD growth produces CeO2 films with polycrystalline cubic phase on both substrates. However, the films show a preferential orientation along <200> crystallographic direction for CeO2/Si or <111> for CeO2/TiN, as revealed by X-ray diffraction. Additionally, CeO2 films differ in interface roughness depending on the substrate. Furthermore, the relative concentration of Ce3+ is 22.0% in CeO2/Si and around 18% in CeO2/TiN, as obtained by X-ray photoelectron spectroscopy (XPS). Such values indicate a ~10% off-stoichiometry and are indicative of the presence of oxygen vacancies in the films. Nonetheless, CeO2 bandgap energy and refractive index at 550 nm are 3.54+/-0.63 eV and 2.3 for CeO2/Si, and 3.63+/-0.18 eV and 2.4 for CeO2/TiN, respectively. Our results extend the knowledge on the structural and chemical properties of ALD-deposited CeO2 either on Si or TiN substrates, underlying films differences and similarities, thus contributing to boost the use of CeO2 through ALD deposition as foreseen in a wide number of applications.
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Submitted 12 May, 2017; v1 submitted 11 May, 2017;
originally announced May 2017.
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Spinner: Scalable Graph Partitioning in the Cloud
Authors:
Claudio Martella,
Dionysios Logothetis,
Andreas Loukas,
Georgos Siganos
Abstract:
Several organizations, like social networks, store and routinely analyze large graphs as part of their daily operation. Such graphs are typically distributed across multiple servers, and graph partitioning is critical for efficient graph management. Existing partitioning algorithms focus on finding graph partitions with good locality, but disregard the pragmatic challenges of integrating partition…
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Several organizations, like social networks, store and routinely analyze large graphs as part of their daily operation. Such graphs are typically distributed across multiple servers, and graph partitioning is critical for efficient graph management. Existing partitioning algorithms focus on finding graph partitions with good locality, but disregard the pragmatic challenges of integrating partitioning into large-scale graph management systems deployed on the cloud, such as dealing with the scale and dynamicity of the graph and the compute environment.
In this paper, we propose Spinner, a scalable and adaptive graph partitioning algorithm based on label propagation designed on top of the Pregel model. Spinner scales to massive graphs, produces partitions with locality and balance comparable to the state-of-the-art and efficiently adapts the partitioning upon changes. We describe our algorithm and its implementation in the Pregel programming model that makes it possible to partition billion-vertex graphs. We evaluate Spinner with a variety of synthetic and real graphs and show that it can compute partitions with quality comparable to the state-of-the art. In fact, by using Spinner in conjunction with the Giraph graph processing engine, we speed up different applications by a factor of 2 relative to standard hash partitioning.
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Submitted 1 February, 2015; v1 submitted 15 April, 2014;
originally announced April 2014.
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xDGP: A Dynamic Graph Processing System with Adaptive Partitioning
Authors:
Luis Vaquero,
Felix Cuadrado,
Dionysios Logothetis,
Claudio Martella
Abstract:
Many real-world systems, such as social networks, rely on mining efficiently large graphs, with hundreds of millions of vertices and edges. This volume of information requires partitioning the graph across multiple nodes in a distributed system. This has a deep effect on performance, as traversing edges cut between partitions incurs a significant performance penalty due to the cost of communicatio…
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Many real-world systems, such as social networks, rely on mining efficiently large graphs, with hundreds of millions of vertices and edges. This volume of information requires partitioning the graph across multiple nodes in a distributed system. This has a deep effect on performance, as traversing edges cut between partitions incurs a significant performance penalty due to the cost of communication. Thus, several systems in the literature have attempted to improve computational performance by enhancing graph partitioning, but they do not support another characteristic of real-world graphs: graphs are inherently dynamic, their topology evolves continuously, and subsequently the optimum partitioning also changes over time.
In this work, we present the first system that dynamically repartitions massive graphs to adapt to structural changes. The system optimises graph partitioning to prevent performance degradation without using data replication. The system adopts an iterative vertex migration algorithm that relies on local information only, making complex coordination unnecessary. We show how the improvement in graph partitioning reduces execution time by over 50%, while adapting the partitioning to a large number of changes to the graph in three real-world scenarios.
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Submitted 10 September, 2013; v1 submitted 4 September, 2013;
originally announced September 2013.