Observation of Topologically Protected States at Crystalline Phase Boundaries in Single-layer WSe2
Authors:
Miguel M. Ugeda,
Artem Pulkin,
Shujie Tang,
Hye** Ryu,
Quansheng Wu,
Yi Zhang,
Dillon Wong,
Zahra Pedramrazi,
Ana Martín-Recio,
Yi Chen,
Feng Wang,
Zhi-Xun Shen,
Sung-Kwan Mo,
Oleg V. Yazyev,
Michael F. Crommie
Abstract:
Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallograp…
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Transition metal dichalcogenide (TMD) materials are unique in the wide variety of structural and electronic phases they exhibit in the two-dimensional (2D) single-layer limit. Here we show how such polymorphic flexibility can be used to achieve topological states at highly ordered phase boundaries in a new quantum spin Hall insulator (QSHI), 1T'-WSe2. We observe helical states at the crystallographically-aligned interface between quantum a spin Hall insulating domain of 1T'-WSe2 and a semiconducting domain of 1H-WSe2 in contiguous single layers grown using molecular beam epitaxy (MBE). The QSHI nature of single-layer 1T'-WSe2 was verified using ARPES to determine band inversion around a 120 meV energy gap, as well as STM spectroscopy to directly image helical edge-state formation. Using this new edge-state geometry we are able to directly confirm the predicted penetration depth of a helical interface state into the 2D bulk of a QSHI for a well-specified crystallographic direction. The clean, well-ordered topological/trivial interfaces observed here create new opportunities for testing predictions of the microscopic behavior of topologically protected boundary states without the complication of structural disorder.
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Submitted 7 November, 2018; v1 submitted 5 February, 2018;
originally announced February 2018.
Electronic Structure, Surface Do**, and Optical Response in Epitaxial WSe2 Thin Films
Authors:
Yi Zhang,
Miguel M. Ugeda,
Chenhao **,
Su-Fei Shi,
Aaron J. Bradley,
Ana Martin-Recio,
Hye** Ryu,
Jonghwan Kim,
Shujie Tang,
Yeongkwan Kim,
Bo Zhou,
Choongyu Hwang,
Yulin Chen,
Feng Wang,
Michael F. Crommie,
Zahid Hussain,
Zhi-Xun Shen,
Sung-Kwan Mo
Abstract:
High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bila…
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High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy (MBE). The combination of angle-resolved photoemission (ARPES), scanning tunneling microscopy/spectroscopy (STM/STS), and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional 3D semiconductors, yet small as compared to other 2D transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron do** opens a route to further control the electronic properties of TMDCs.
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Submitted 20 March, 2016;
originally announced March 2016.
