Optical observation of single spins in silicon
Authors:
A. T. K. Kurkjian,
D. B. Higginbottom,
C. Chartrand,
E. R. MacQuarrie,
J. R. Klein,
N. R. Lee-Hone,
J. Stacho,
C. Bowness,
L. Bergeron,
A. DeAbreu,
N. A. Brunelle,
S. R. Harrigan,
J. Kanaganayagam,
M. Kazemi,
D. W. Marsden,
T. S. Richards,
L. A. Stott,
S. Roorda,
K. J. Morse,
M. L. W. Thewalt,
S. Simmons
Abstract:
The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advan…
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The global quantum internet will require long-lived, telecommunications band photon-matter interfaces manufactured at scale. Preliminary quantum networks based upon photon-matter interfaces which meet a subset of these demands are encouraging efforts to identify new high-performance alternatives. Silicon is an ideal host for commercial-scale solid-state quantum technologies. It is already an advanced platform within the global integrated photonics and microelectronics industries, as well as host to record-setting long-lived spin qubits. Despite the overwhelming potential of the silicon quantum platform, the optical detection of individually addressable photon-spin interfaces in silicon has remained elusive. In this work we produce tens of thousands of individually addressable `$T$ centre' photon-spin qubits in integrated silicon photonic structures, and characterize their spin-dependent telecommunications-band optical transitions. These results unlock immediate opportunities to construct silicon-integrated, telecommunications-band quantum information networks.
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Submitted 12 March, 2021;
originally announced March 2021.
