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Tunable on-chip electro-optic frequency-comb generation at 8 μm wavelength
Authors:
Victor Turpaud,
Thi-Hao-Nhi Nguyen,
Natnicha Koompai,
Jonathan Peltier,
Jacopo Frigerio,
Stefano Calcaterra,
Jean-René Coudevylle,
David Bouville,
Carlos Alonso-Ramos,
Laurent Vivien,
Giovanni Isella,
Delphine Marris-Morini
Abstract:
Dual-comb spectroscopy is a powerful technique to measure optical spectra in a wide spectral range with high-frequency resolution. The development of compact systems operating in the long-wave infrared wavelength range is of high interest for spectroscopic and sensing applications. Amongst the different techniques to obtain optical frequency-combs, electro-optic frequency-comb generation presents…
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Dual-comb spectroscopy is a powerful technique to measure optical spectra in a wide spectral range with high-frequency resolution. The development of compact systems operating in the long-wave infrared wavelength range is of high interest for spectroscopic and sensing applications. Amongst the different techniques to obtain optical frequency-combs, electro-optic frequency-comb generation presents major advantages thanks to the tunable repetition rate only limited by the bandwidth of the used electro-optical modulator. However, the development of integrated and efficient electro-optical modulators operating in a wide long-wave infrared spectral band is still at its infancy, and electro-optical frequency-comb has not been demonstrated so far beyond the telecom band. In this work, a Schottky-based modulator embedded in a Ge-rich graded SiGe waveguide is used for electro-optic frequency-comb generation. Considering the limited efficiency of the modulator, harmonically-rich RF signals are used to enhance the generation of comb lines around the optical carrier. Interestingly, this allows us to demonstrate the generation of electro-optical combs spanning over 2.4 GHz around 8 μm wavelength. This paves the way towards fully integrated and tunable mid-infrared electro-optic frequency-comb generation systems.
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Submitted 12 February, 2024;
originally announced February 2024.
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Generation of electro-optic frequency combs with optimized flatness in a silicon ring resonator modulator
Authors:
Erwan Weckenmann,
Thyago Monteiro,
Uiara Celine de Moura,
Francesco Da Ros,
Laurent Bramerie,
Mathilde Gay,
Diego Pérez-Galacho,
Lucas Deniel,
Frédéric Boeuf,
Delphine Marris-Morini,
Darko Zibar,
Christophe Peucheret
Abstract:
The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating…
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The flatness of electro-optic frequency combs (EOFCs) generated in a single silicon ring resonator modulator (RRM) is optimized by employing harmonic superposition of the radio-frequency driving signal. A differential evolution algorithm is employed in conjunction with a simplified model of the RRM for offline optimization of the amplitudes and phases of harmonic driving signals and the operating point of the RRM. The optimized driving signals are then applied to a silicon RRM. EOFCs containing 7 and 9 lines are synthesized with a power imbalance between the lines of 2.9 dB and 5.4 dB, respectively, compared to 9.4 dB for an optimized 5-line comb generated from a single sinusoidal driving signal.
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Submitted 31 October, 2023;
originally announced October 2023.
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High speed silicon photonic electro-optic Kerr modulation
Authors:
Jonathan Peltier,
Weiwei Zhang,
Leopold Virot,
Christian Lafforgue,
Lucas Deniel,
Delphine Marris-Morini,
Guy Aubin,
Farah Amar,
Denh Tran,
Xingzhao Yan,
Callum G. Littlejohns,
Carlos Alonso-Ramos,
David J. Thomson,
Graham Reed,
Laurent Vivien
Abstract:
Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon b…
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Electro-optic silicon-based modulators contribute to ease the integration of high-speed and low-power consumption circuits for classical optical communications or quantum computers. However, the inversion symmetry in the silicon crystal structure inhibits the use of Pockels effect. An electric field-induced optical modulation equivalent to a Pockels effect can nevertheless be achieved in silicon by the use of DC Kerr effect. Although some theoretical and experimental studies have shown its existence in silicon, the DC Kerr effect in optical modulation have led to a negligible contribution so far. This paper reports demonstration of high-speed optical modulation based on the electric field-induced linear electro-optic effect in silicon PIN junction waveguides. The relative contributions of both plasma dispersion and Kerr effects are quantified and we show that the Kerr induced modulation is dominant when a high external DC electric field is applied. Finally, the high-speed modulation response is analyzed and eye diagram up to 100 Gbits/s in NRZ format are obtained. This work demonstrates high speed modulation based on Kerr effect in silicon, and its potential for low loss, quasi-pure phase modulation.
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Submitted 27 February, 2023;
originally announced February 2023.
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Genetic optimization of Brillouin scattering gain in subwavelength-structured silicon membrane waveguides
Authors:
Paula Nuño Ruano,
Jianhao Zhang,
Xavier Le Roux,
David González-Andrade,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Norberto Daniel Lanzillotti-Kimura,
Carlos Alonso-Ramos
Abstract:
On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic al…
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On-chip Brillouin optomechanics has great potential for applications in communications, sensing, and quantum technologies. Tight confinement of near-infrared photons and gigahertz phonons in integrated waveguides remains a key challenge to achieving strong on-chip Brillouin gain. Here, we propose a new strategy to harness Brillouin gain in silicon waveguides, based on the combination of genetic algorithm optimization and periodic subwavelength structuration to engineer photonic and phononic modes simultaneously. The proposed geometry is composed of a waveguide core and a lattice of anchoring arms with a subwavelength period requiring a single etch step. The waveguide geometry is optimized to maximize the Brillouin gain using a multi-physics genetic algorithm. Our simulation results predict a remarkable Brillouin gain exceeding 3300 1/(W m), for a mechanical frequency near 15 GHz.
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Submitted 10 January, 2023;
originally announced January 2023.
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Spatial and polarization division multiplexing harnessing on-chip optical beam forming
Authors:
David González-Andrade,
Xavier Le Roux,
Guy Aubin,
Farah Amar,
Thi Hao Nhi Nguyen,
Paula Nuño Ruano,
Thi Thuy Duong Dinh,
Dorian Oser,
Diego Pérez-Galacho,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new a…
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On-chip spatial and polarization multiplexing have emerged as a powerful strategy to boost the bandwidth of integrated optical transceivers. State-of-the-art multiplexers require accurate control of the relative phase or the spatial distribution among different guided optical modes, seriously compromising the bandwidth and performance of the devices. To overcome this limitation, we propose a new approach based on the coupling between guided modes in integrated waveguides and optical beams free-propagating on the chip plane. The engineering of the evanescent coupling between the guided modes and free-propagating beams allows spatial and polarization multiplexing with state-of-the-art performance. To demonstrate the potential and versatility of this approach, we have developed a two-polarization multiplexed link and a three-mode multiplexed link using standard 220-nm-thick silicon-on-insulator technology. The two-polarization link shows a measured -35 dB crosstalk bandwidth of 180 nm, while the three-mode link exhibits a -20 dB crosstalk bandwidth of 195 nm. These bandwidths cover the S, C, L, and U communication bands. We used these links to demonstrate error-free transmission (bit-error-rate < 10-9) of two and three non-return-to-zero signals at 40 Gbps each, with power penalties below 0.08 dB and 1.5 dB for the two-polarization and three-mode links respectively. The approach demonstrated here for two polarizations and three modes is also applicable to future implementation of more complex multiplexing schemes.
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Submitted 25 December, 2022;
originally announced December 2022.
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arXiv:2207.10084
[pdf]
physics.optics
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.other
physics.app-ph
Low-Power consumption Franz-Keldysh effect plasmonic modulator
Authors:
Nicolás Abadía,
Thomas Bernadin,
Papichaya Chaisakul,
Ségolene Olivier,
Delphine Marris-Morini,
Roch Espiau de Lamaëstre,
Jean-Claude Weeber,
Laurent Vivien
Abstract:
In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 $μm$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. Th…
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In this paper we report on a low energy consumption CMOS-compatible plasmonic modulator based on Franz-Keldysh effect in germanium on silicon. We performed integrated electro-optical simulations in order to optimize the main characteristics of the modulator. A 3.3 $dB$ extinction ratio for a 30 $μm$ long modulator is demonstrated under 3 $V$ bias voltage at an operation wavelength of 1647 $nm$. The estimated energy consumption is as low as 20 $fJ/bit$.
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Submitted 20 July, 2022;
originally announced July 2022.
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Broadband behavior of quadratic metalenses with a wide field of view
Authors:
Yang Liu,
Jianhao Zhang,
Xavier Le Roux,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Carlos Alonso-Ramos,
Daniele Melati
Abstract:
Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view b…
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Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands.
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Submitted 8 June, 2022;
originally announced June 2022.
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Surface acoustic wave lasing in a silicon optomechanical cavity
Authors:
J. Zhang,
P. Nuño-Ruano,
X. Le Roux,
M. Montesinos-Ballester,
D. Marris-Morini,
E. Cassan,
L. Vivien,
N. D. Lanzillotti-Kimura,
C. Alonso-Ramos
Abstract:
Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with extern…
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Integrated optomechanical cavities stand as a promising means to interface mechanical motion and guided optical modes. State-of-the-art demonstrations rely on optical and mechanical modes tightly confined of in micron-scale areas to achieve strong optomechanical coupling. However, the need for tight optomechanical confinement and the general use of suspended devices hinders interaction with external devices, limiting the potential for the implementation of complex circuits. Here, we propose and demonstrate a new approach for optomechanical cavities coupling free-propagating surface acoustic waves (SAWs) and guided optical modes. The cavity is formed by a periodic array of silicon nanopillars with subwavelength separation, implemented in silicon-on-insulator substrate. Optical pum** yields a strong radiation pressure that drives the harmonic vibration of the pillars, periodically deforming the silica under-cladding and exciting the SAW. The propagation of the SAW deforms the cavity period, modulating the resonance wavelength to close the optomechanical coupling loop. Based on this concept, we experimentally demonstrate a phonon laser at room temperature and ambient conditions with optical pump power as low as 1 mW. We also show the possibility to cascade this process, achieving a frequency comb generation with more than 30 harmonic lines. These results open a new path to achieve strong bidirectional coupling between integrated waveguides and SAW, with a great potential for a wide range of applications in quantum and classical domains.
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Submitted 11 March, 2022;
originally announced March 2022.
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Dispersive wave control enabled by silicon metamaterial waveguides
Authors:
T. T. D. Dinh,
X. Le Roux,
M. Montesinos-Ballester,
C. Lafforgue,
J. Zhang,
D. González-Andrade,
D. Melati,
D. Bouville,
D. Benedikovic,
P. Cheben,
E. Cassan,
D. Marris-Morini,
L. Vivien,
C. Alonso-Ramos
Abstract:
The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dis…
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The ability to exploit the on-chip nonlinear generation of new frequencies has opened the door to a plethora of applications in fundamental and applied physics. Excitation of dispersive waves is a particularly interesting process that allows efficient nonlinear wavelength conversion by phase-matching of a soliton and waves in the normal dispersion regime. However, controlling the wavelength of dispersive waves in integrated waveguides remains an open challenge, hampering versatile sha** of the nonlinear spectral response. Here, we show that metamaterial silicon waveguides release new degrees of freedom to select the wavelength of dispersive waves. Based on this concept, we experimentally demonstrate excitation of two dispersive waves near 1.55 μm and 7.5 μm allowing ultra-wideband supercontinuum generation, covering most of the silicon transparency window. These results stand as an important milestone for versatile nonlinear frequency generation in silicon chips, with a great potential for applications in sensing, metrology and communications.
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Submitted 17 January, 2022;
originally announced January 2022.
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Mid-infrared Fourier-transform spectrometer based on metamaterial lateral cladding suspended silicon waveguides
Authors:
Thi Thuy Duong Dinh,
Xavier Le Roux,
Natnicha Koompai,
Daniele Melati,
Miguel Montesinos-Ballester,
David González-Andrade,
Pavel Cheben,
Aitor V. Velasco,
Eric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the stron…
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Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, due to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 μm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating near 5.5μm wavelength. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm between 5.3μm and 5.7μm wavelengths. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 μm, achieving a measured spectral resolution of 13cm-1 and a free-spectral range of 100 cm-1 near 5.5μm wavelength.
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Submitted 3 December, 2021;
originally announced December 2021.
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Sha** the modal confinement in silicon nanophotonic waveguides through dual-metamaterial engineering
Authors:
T. T. D. Dinh,
X. Le Roux,
J. Zhang,
M. Montesinos-Ballester,
C. Lafforgue,
D. Benedikovic,
P. Cheben,
E. Cassan,
D. Marris-Morini,
L. Vivien,
C Alonso-Ramos
Abstract:
Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness,…
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Flexible control of the modal confinement in silicon photonic waveguides is an appealing feature for many applications, including sensing and hybrid integration of active materials. In most cases, strip waveguides are the preferred solution to maximize the light interaction with the waveguide surroundings. However, the only two degrees of freedom in Si strip waveguides are the width and thickness, resulting in limited flexibility in evanescent field control. Here, we propose and demonstrate a new strategy that exploits metamaterial engineering of the waveguide core and cladding to control the index contrast in the vertical and horizontal directions, independently. The proposed dual-material geometry yields a substantially increased calculated overlap with the air (0.35) compared to the best-case scenario for a strip waveguide (0.3). To experimentally demonstrate the potential of this approach, we have implemented dual-metamaterial ring resonators, operating with the transverse-magnetic polarized mode in 220-nm-thick waveguides with air as upper-cladding. Micro-ring resonators implemented with strip and dual-metamaterial waveguides exhibit the same measured quality factors, near 30,000. Having similar measured quality factors and better calculated external confinement factors than strip waveguides, the proposed dual-metamaterial geometry stands as a promising approach to control modal confinement in silicon waveguides.
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Submitted 31 May, 2021;
originally announced May 2021.
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Generating 10-GHz phonons in nanostructured silicon membrane optomechanical cavity
Authors:
Jianhao Zhang,
Xavier Le Roux,
Miguel Montesinos-Ballester,
Omar Ortiz,
Delphine Marris-Morini,
Eric Cassan,
Laurent Vivien,
Norberto Daniel Lanzillotti-Kimura,
Carlos Alonso-Ramos
Abstract:
Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedesta…
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Flexible control of photons and phonons in silicon nanophotonic waveguides is a key feature for emerging applications in communications, sensing and quantum technologies. Strong phonon leakage towards the silica under-cladding hampers optomechanical interactions in silicon-on-insulator. This limitation has been circumvented by totally or partially removing the silica under-cladding to form pedestal or silicon membrane waveguides. Remarkable optomechanical interactions have been demonstrated in silicon using pedestal strips, membrane ribs, and photonic/phononic crystal membrane waveguides. Still, the mechanical frequencies are limited to the 1-5 GHz range. Here, we exploit the periodic nanostructuration in Si membrane gratings to shape GHz phononic modes and near-infrared photonic modes, achieving ultrahigh mechanical frequency (10 GHz) and strong photon-phonon overlap (61.5%) simultaneously. Based on this concept, we experimentally demonstrate a one-dimension optomechanical micro-resonator with a high mechanical frequency of 10 GHz and a quality factor of 1000. These results were obtained at room temperature and ambient conditions with an intracavity optical power below 1 mW, illustrating the efficient optical driving of the mechanical mode enabled by the proposed approach.
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Submitted 26 March, 2021;
originally announced March 2021.
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Silicon-on-insulator optomechanical microresonator with tight photon and phonon confinement
Authors:
Jianhao Zhang,
Xavier Le Roux,
Miguel Montesinos-Ballester,
Omar Ortiz,
Delphine Marris-Morini,
Laurent Vivien,
Norberto Daniel Lanzillotti-Kimura,
Carlos Alonso-Ramos
Abstract:
The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration w…
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The implementation of optomechanical devices in silicon-on-insulator (SOI), the canonical silicon photonics technology is seriously hampered by the strong phonon leakage into the silica under-cladding. This limitation has been partially circumvented by total or partial removal of the silica under-cladding to form Si membranes or pedestal waveguides. However, this approach complicates integration with standard silicon optoelectronics circuitry, limiting the versatility and application of the strategy. Here, we propose and demonstrate a new strategy to confine photons and phonons in SOI without removing the silica under-cladding. Inspired by end-fire antenna arrays, we implement a periodic nanostructuration of silicon that simultaneously enables cancelling phonon leakage by destructive interference and guiding of photons by metamaterial index confinement. Based on this concept, we implement SOI optomechanical micro-resonators yielding remarkable optomechanical coupling (go=49 kHz) between 0.66 GHz mechanical modes and near-infrared optical modes. The mechanical mode exhibits a measured quality factor of Qm = 730, the largest reported for SOI optomechanical resonators, without silica removal. This value compares favorably with state-of-the-art Si membrane waveguides recently used to demonstrate remarkable Brillouin interactions in silicon (Qm ~ 700). These results open a new path for develo** optomechanics in SOI without the need for silica removal, allowing seamless co-integration with current Si optoelectronics circuits, with a great potential for applications in communications, sensing, metrology, and quantum technologies.
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Submitted 16 March, 2021; v1 submitted 15 March, 2021;
originally announced March 2021.
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Stress measurements in silicon photonics by integrated Raman spectroscopy
Authors:
Guillaume Marcaud,
Mathias Berciano,
Christian Lafforgue,
Carlos Alonso-Ramos,
Xavier Le Roux,
Thomas Maroutian,
Guillaume Agnus,
Pascal Aubert,
Ludovic Largeau,
Eric Cassan,
Sylvia Matzen,
Delphine Marris-Morini,
Philippe Lecoeur,
Laurent Vivien
Abstract:
Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds…
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Complex 3D integration of photonic and electronic integrated circuits is of particular interest to carry the photonics roadmap and to address challenges but involves mechanical stress, often detrimental for the behavior of optical components. Existing experiments failed to carefully analyze the stress in such integrated optical devices due to the requirement in terms of feature sizes, few hundreds of nanometers, and 3D-stacked integration. We present for the first time the characterization of the stress tensor of a silicon waveguide using Integrated Raman Spectroscopy (IRS). This experimental technique is directly sensitive to the effective stress, which involves changes in optical properties of the guided mode, at the working wavelength and polarization state of the photonic component. The experimental stress tensor is in good agreement with simulations.
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Submitted 24 December, 2020;
originally announced December 2020.
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Optical modulation in Ge-rich SiGe waveguides in the mid-IR wavelength range up to 11 um
Authors:
Miguel Montesinos-Ballester,
Vladyslav Vakarin,
Joan Manel Ramirez,
Qiankun Liu,
Carlos Alonso-Ramos,
Xavier Le Roux,
Jacopo Frigerio,
Andrea Ballabio,
Andrea Barzaghi,
Lucas Deniel,
David Bouville,
Laurent Vivien,
Giovanni Isella,
Delphine Marris-Morini
Abstract:
Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report…
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Waveguide integrated optical modulators in the mid-infrared (mid-IR) wavelength range are of significant interest for molecular spectroscopy in one hand, as on-chip synchronous detection can improve the performance of detection systems, and for free-space communications on the other hand, where optical modulators working in the atmospheric transparency windows are crucially missing. Here we report for the first time the demonstration of optical modulation in mid-IR photonic circuit reaching wavelengths larger than 8 um. Moreover, optical modulation in an unprecedented wavelength range, from 5.5 to 11 um wavelength is shown, relying on a broadband Ge-rich graded-SiGe platform. This first demonstration is used as a proof of concept, to experimentally confirm the free-carrier absorption effect modeling. These results pave the way towards efficient high-performance electrically-driven integrated optical modulators in the mid-IR wavelength range.
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Submitted 25 November, 2019;
originally announced November 2019.
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Polarization and wavelength agnostic nanophotonic beam splitter
Authors:
David González-Andrade,
Christian Lafforgue,
Elena Durán-Valdeiglesias,
Xavier Le Roux,
Mathias Berciano,
Eric Cassan,
Delphine Marris-Morini,
Aitor V. Velasco,
Pavel Cheben,
Laurent Vivien,
Carlos Alonso-Ramos
Abstract:
High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that…
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High-performance optical beam splitters are of fundamental importance for the development of advanced silicon photonics integrated circuits. However, due to the high refractive index contrast of the silicon-on-insulator platform, state of the art Si splitters are hampered by trade-offs in bandwidth, polarization dependence and sensitivity to fabrication errors. Here, we present a new strategy that exploits modal engineering in slotted waveguides to overcome these limitations, enabling ultra-wideband polarization-insensitive optical power splitters, with relaxed fabrication tolerances. The proposed splitter relies on a single-mode slot waveguide which is transformed into two strip waveguides by a symmetric taper, yielding equal power splitting. Based on this concept, we experimentally demonstrate -3$\pm$0.5 dB polarization-independent transmission in an unprecedented 390 nm bandwidth (1260 - 1650 nm), even in the presence of waveguide width deviations as large as $\pm$25 nm.
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Submitted 25 June, 2018;
originally announced July 2018.
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Generating Fano Resonances in a single-waveguide nanobeam cavity for efficient electro-optical modulation
Authors:
Jianhao Zhang,
Xavier Le Roux,
Elena Ruran-Valdeiglesias,
Carlos Alonso-Ramos,
Delphine Marris-Morini,
Laurent Vivien,
Sailing He,
Eric Cassan
Abstract:
We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and ultra-fast electro-optical modulators.. Taking advantage from a spatial-division multiplexing principle of operation between transverse electric modes, a sharp resonant…
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We propose a method for generating Fano resonance in a standalone silicon nanobeam cavity which eliminates the inconvenience from the unexpected side-coupled bus waveguide and unlocks new opportunities to develop ultra-compact and ultra-fast electro-optical modulators.. Taking advantage from a spatial-division multiplexing principle of operation between transverse electric modes, a sharp resonant mode and an efficient flat background mode are simultaneously generated in the same silicon channel for the realization of efficient Fano resonances. Unambiguous asymmetric spectrum lineshapes are thoroughly investigated using numerical and analytical methods and experimentally demonstrated in the near infra-red around lambda=1.55μm, presenting an extinction ratio of about 17dB for a delta lambda =56 pm wavelength detuning for the 1st cavity mode (Q-factor Q=34000), and higher than 23 dB extinction ratio for a delta lambda=366 pm detuning for the 2nd cavity mode (Q=5600). These extinction ratios are 10~15 dB larger than their Lorentzian counterparts exhibiting similar Q factors. Silicon Fano modulation based on plasma dispersion effect is proposed, for which an energy consumption as low as few fJ/bit is estimated. Fano cavity scheme addressed in this paper presents a great potential for low power consumption silicon optical modulators and provides anew insight to the advantages of Fano resonances for optical modulation schemes.
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Submitted 11 July, 2018;
originally announced July 2018.
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Coherency-broken Bragg filters: surpassing on-chip rejection limitations
Authors:
D. Oser,
F. Mazeas,
X. Le Roux,
D. Perez-Galacho,
O. Alibart,
S. Tanzilli,
L. Labonte,
D. Marris-Morini,
L. Vivien,
E. Cassan,
C. Alonso-Ramos
Abstract:
Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filt…
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Selective on-chip optical filters with high rejection levels are key components for a wide range of advanced photonic circuits. However, maximum achievable rejection in state-of-the-art on-chip devices is seriously limited by phase errors arising from fabrication imperfections. Due to coherent interactions, unwanted phase-shifts result in detrimental destructive interferences that distort the filter response, whatever the chosen strategy (resonators, interferometers, Bragg filters, etc.). Here we propose and experimentally demonstrate a radically different approach to overcome this fundamental limitation, based on coherency-broken Bragg filters. We exploit non-coherent interaction among modal-engineered waveguide Bragg gratings separated by single-mode waveguides to yield effective cascading, even in the presence of fabrication errors. This technologically independent approach allows seamless combination of filter stages with moderate performance, providing a dramatic increase of on-chip rejection. Based on this concept, we experimentally demonstrate on-chip non-coherent cascading of Si Bragg filters with a record light rejection exceeding 80 dB in the C-band.
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Submitted 19 June, 2018;
originally announced June 2018.
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Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures
Authors:
Diego Pérez-Galacho,
Carlos Alonso-Ramos,
Florent Mazeas,
Xavier Le Roux,
Dorian Oser,
Weiwei Zhang,
Delphine Marris-Morini,
Laurent Labonté,
Sébastien Tanzilli,
Éric Cassan,
Laurent Vivien
Abstract:
The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg…
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The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, $\mathbf{220\,nm}$ thick, Si Bragg filter featuring a corrugation width of $\mathbf{150\,nm}$, a rejection bandwidth of $\mathbf{1.1\,nm}$ and an extinction ratio exceeding $\mathbf{40\,dB}$. This represents a ten-fold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.
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Submitted 29 May, 2017;
originally announced May 2017.
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Long-period suspended silicon Bragg grating filter for hybrid near- and mid-infrared operation
Authors:
Carlos Alonso-Ramos,
Xavier Le Roux,
Daniel Benedikovic,
Vladyslav Vakarin,
Elena Duran-Valdeiglesias,
Diego Perez-Galacho,
Eric Cassan,
Delphine Marris-Morini,
Pavel Cheben,
Laurent Vivien
Abstract:
The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors…
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The large transparency window of silicon, covering the 1.1 um 8 um wavelength range, makes it a promising platform for the implementation of photothermal-based absorption spectrometers. These devices indirectly sense absorption in the mid-infrared (MIR) by using near-infrared (NIR) wavelengths, thereby enabling the realization of MIR absorption spectrometers without the need for MIR photodetectors. Nevertheless, due to their comparatively large index contrast and cross-sections, MIR Si strip waveguides are multi-mode at NIR wavelengths, hindering device implementation. Here we present, for the first time, an integrated Bragg grating waveguide filter for hybrid near- and mid-infrared operation. Specifically, the filter is implemented in a single-etch suspended silicon corrugated waveguide with an effectively single-mode operation in NIR region for a waveguide cross-section as large as 0.5 um x 1.1 um. At the same time, the waveguide supports single-mode propagation in MIR region. We demonstrate a long-period waveguide Bragg grating yielding a sharp third-order Bragg resonance for the fundamental waveguide mode and radiating the higher order modes. We experimentally demonstrate a notch filter with a 4nm bandwidth and 40 dB extinction ratio with a temperature-dependent Bragg wavelength shift of 70pm/K.
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Submitted 16 October, 2016;
originally announced October 2016.
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High-quality photonic entanglement for wavelength-multiplexed quantum communication based on a silicon chip
Authors:
Florent Mazeas,
Michele Traetta,
Marco Bentivegna,
Florian Kaiser,
Djeylan Aktas,
Weiwei Zhang,
Carlos Alonso Ramos,
Lutfi-Arif Bin-Ngah,
Tommaso Lunghi,
Éric Picholle,
Nadia Belabas-Plougonven,
Xavier Le Roux,
Éric Cassan,
Delphine Marris-Morini,
Laurent Vivien,
Grégory Sauder,
Laurent Labonté,
Sébastien Tanzilli
Abstract:
We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400\,pairs of entangled photons /s/MHz for $\rm 500\,μW$ pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible w…
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We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400\,pairs of entangled photons /s/MHz for $\rm 500\,μW$ pump power. Additionally, the resonator has been engineered so as to generate a frequency comb structure compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities ($>$~98\%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.
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Submitted 8 February, 2017; v1 submitted 2 September, 2016;
originally announced September 2016.
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Bond orbital description of the strain induced second order optical susceptibility in silicon
Authors:
Pedro Damas,
Delphine Marris-Morini,
Eric Cassan,
Laurent Vivien
Abstract:
We develop a theoretical model, relying on the well established sp3 bond-orbital theory, to describe the strain-induced $χ^{(2)}$ in tetrahedrally coordinated centrosymmetric covalent crystals, like silicon. With this approach we are able to describe every component of the $χ^{(2)}$ tensor in terms of a linear combination of strain gradients and only two parameters $α$ and $β$ which can be estimat…
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We develop a theoretical model, relying on the well established sp3 bond-orbital theory, to describe the strain-induced $χ^{(2)}$ in tetrahedrally coordinated centrosymmetric covalent crystals, like silicon. With this approach we are able to describe every component of the $χ^{(2)}$ tensor in terms of a linear combination of strain gradients and only two parameters $α$ and $β$ which can be estimated theoretically. The resulting formula can be applied to the simulation of the strain distribution of a practical strained silicon device, providing an extraordinary tool for optimization of its optical nonlinear effects. By doing that, we were able not only to confirm the main valid claims known about $χ^{(2)}$ in strained silicon, but also estimate the order of magnitude of the $χ^{(2)}$ generated in that device.
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Submitted 10 November, 2015;
originally announced November 2015.
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Electroabsorption study of index-defined semiconducting carbon nanotubes
Authors:
Nicolas Izard,
Etienne Gaufrès,
Xavier Le Roux,
Saïd Kazaoui,
Yoichi Murakami,
Delphine Marris-Morini,
Eric Cassan,
Shigeo Maruyama,
Laurent Vivien
Abstract:
Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show that at least for a limited range of diameters, electroabsorption is directly proportional to the exciton binding energy of nanotubes. Electroabsorption is a po…
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Electroabsorption spectroscopy of well-identified index-defined semiconducting carbon nanotubes is reported. The measurement of high definition electroabsorption spectra allows direct indexation with unique nanotube chirality. Results show that at least for a limited range of diameters, electroabsorption is directly proportional to the exciton binding energy of nanotubes. Electroabsorption is a powerful technique which directly probes into carbon nanotube excitonic states, and may become a useful tool for in situ study of excitons in future nanotube-based photonic devices such as electroabsorption modulators.
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Submitted 5 August, 2015;
originally announced August 2015.
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Optical Gain in Carbon Nanotubes
Authors:
Etienne Gaufrès,
Nicolas Izard,
Xavier Le Roux,
Delphine Marris-Morini,
Saïd Kazaoui,
Eric Cassan,
Laurent Vivien
Abstract:
Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical ga…
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Semiconducting single-wall carbon nanotubes (s-SWNTs) have proved to be promising material for nanophotonics and optoelectronics. Due to the possibility of tuning their direct band gap and controlling excitonic recombinations in the near-infrared wavelength range, s-SWNT can be used as efficient light emitters. We report the first experimental demonstration of room temperature intrinsic optical gain as high as 190 cm-1 at a wavelength of 1.3 μm in a thin film doped with s-SWNT. These results constitute a significant milestone toward the development of laser sources based on carbon nanotubes for future high performance integrated circuits.
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Submitted 28 November, 2010;
originally announced November 2010.
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Optical microcavity with semiconducting single-wall carbon nanotubes
Authors:
Etienne Gaufrès,
Nicolas Izard,
Xavier Le Roux,
Saïd Kazaoui,
Delphine Marris-Morini,
Eric Cassan,
Laurent Vivien
Abstract:
We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at…
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We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Futhermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 $μ$m. Such results prove the great potential of carbon nanotubes for photonic applications.
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Submitted 25 October, 2010;
originally announced October 2010.
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Enhancement of semiconducting single-wall carbon nanotubes photoluminescence
Authors:
Etienne Gaufrès,
Nicolas Izard,
Laurent Vivien,
Saïd Kazaoui,
Delphine Marris-Morini,
Eric Cassan
Abstract:
Photoluminescence properties of semiconducting single wall carbon nanotubes (s-SWNT) thin films with different metallic single wall carbon nanotubes (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer assisted selective extraction. We show that a few m-SWNT in the sample generates a drastic quenching of the emission. Therefore, highly purified s-SWNT films are a…
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Photoluminescence properties of semiconducting single wall carbon nanotubes (s-SWNT) thin films with different metallic single wall carbon nanotubes (m-SWNT) concentrations are reported. s-SWNT purified samples are obtained by polymer assisted selective extraction. We show that a few m-SWNT in the sample generates a drastic quenching of the emission. Therefore, highly purified s-SWNT films are a strongly luminescent material and a good candidate for future applications in photonics, such as near infrared emitters, modulators and detectors.
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Submitted 6 January, 2010;
originally announced January 2010.
