Showing 1–35 of 35 results for author: Markussen, T

Resonance-enhanced vibrational spectroscopy of molecules on a superconductor

Authors: Jan Homberg, Alexander Weismann, Troels Markussen, Richard Berndt

Abstract: Molecular vibrational spectroscopy with the scanning tunneling microscope is feasible but usually detects few vibrational modes. We harness sharp Yu-Shiba-Rusinov (YSR) states observed from molecules on a superconductor to significantly enhance the vibrational signal. From a lead phthalocyanin molecule 46 vibrational peaks are resolved enabling a comparison with calculated modes. The energy resolu… ▽ More Molecular vibrational spectroscopy with the scanning tunneling microscope is feasible but usually detects few vibrational modes. We harness sharp Yu-Shiba-Rusinov (YSR) states observed from molecules on a superconductor to significantly enhance the vibrational signal. From a lead phthalocyanin molecule 46 vibrational peaks are resolved enabling a comparison with calculated modes. The energy resolution is improved beyond the thermal broadening limit and shifts induced by neighbor molecules or the position of the microscope tip are determined. Vice versa, spectra of vibrational modes are used to measure the effect of an electrical field on the energy of YSR states. The method may help to further probe the interaction of molecules with their environment and to better understand selection rules for vibrational excitations. △ Less

Submitted 17 February, 2022; originally announced February 2022.

First principles evaluation of fcc ruthenium for use in advanced interconnects

Authors: Timothy M. Philip, Nicholas A. Lanzillo, Tue Gunst, Troels Markussen, Jonathan Cobb, Shela Aboud, Robert R. Robison

Abstract: As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensively studied, but relatively little attention has been paid to the face-centered cubic (fcc) phase, which has been shown to nucleate in confined structur… ▽ More As the semiconductor industry turns to alternate conductors to replace Cu for future interconnect nodes, much attention as been focused on evaluating the electrical performance of Ru. The typical hexagonal close-packed (hcp) phase has been extensively studied, but relatively little attention has been paid to the face-centered cubic (fcc) phase, which has been shown to nucleate in confined structures and may be present in tight-pitch interconnects. Using \emph{ab initio} techniques, we benchmark the performance of fcc Ru. We find that the phonon-limited bulk resistivity of the fcc Ru is less than half of that of hcp Ru, a feature we trace back to the stronger electron-phonon coupling elements that are geometrically inherited from the modified Fermi surface shape of the fcc crystal. Despite this benefit of the fcc phase, high grain boundary scattering results in increased resistivity compared to Cu-based interconnects with similar average grain size. We find, however, that the line resistance of fcc Ru is lower than that of Cu below 21 nm line width due to the conductor volume lost to adhesion and wetting liners. In addition to studying bulk transport properties, we evaluate the performance of adhesion liners for fcc Ru. We find that it is energetically more favorable for fcc Ru to bind directly to silicon dioxide than through conventional adhesion liners such as TaN and TiN. In the case that a thin liner is necessary for the Ru deposition technique, we find that the vertical resistance penalty of a liner for fcc Ru can be up to eight times lower than that calculated for conventional liners used for Cu interconnects. Our calculations, therefore, suggest that the formation of the fcc phase of Ru may be a beneficial for advanced, low-resistance interconnects. △ Less

Submitted 4 March, 2020; v1 submitted 7 January, 2020; originally announced January 2020.

Comments: 8 pages, 4 figures, 3 tables

Journal ref: Phys. Rev. Applied 13, 044045 (2020)

Magneto-Crystalline Anisotropy of Fe, Co and Ni slabs from Density Functional Theory and Tight-Binding models

Authors: Ludovic Le Laurent, Cyrille Barreteau, Troel Markussen

Abstract: We report magneto-crystalline anisotropy (MCA) calculations of Fe, Co and Ni slabs of various thicknesses and crystallographic orientations from two Density Functional Theory codes based either on a plane wave or a local atomic basis set expansion and a magnetic tight-binding method. We analyze the evolution of the MCA with the number of layers of the slabs. The decomposition of MCA into contribut… ▽ More We report magneto-crystalline anisotropy (MCA) calculations of Fe, Co and Ni slabs of various thicknesses and crystallographic orientations from two Density Functional Theory codes based either on a plane wave or a local atomic basis set expansion and a magnetic tight-binding method. We analyze the evolution of the MCA with the number of layers of the slabs. The decomposition of MCA into contributions of atomic sites helps understanding the oscillatory behaviour of the MCA with the slab thickness and highlights the role of finite size effects. We also identify some specific systems with enhanced MCA. A k-space as well as a band-filling analysis show very rich features of the MCA that could be used to tailor systems with enhanced magnetic properties. Finally this work can serve as a benchmark for MCA calculations. △ Less

Submitted 20 November, 2019; v1 submitted 10 July, 2019; originally announced July 2019.

QuantumATK: An integrated platform of electronic and atomic-scale modelling tools

Authors: Søren Smidstrup, Troels Markussen, Pieter Vancraeyveld, Jess Wellendorff, Julian Schneider, Tue Gunst, Brecht Verstichel, Daniele Stradi, Petr A. Khomyakov, Ulrik G. Vej-Hansen, Maeng-Eun Lee, Samuel T. Chill, Filip Rasmussen, Gabriele Penazzi, Fabiano Corsetti, Ari Ojanperä, Kristian Jensen, Mattias L. N. Palsgaard, Umberto Martinez, Anders Blom, Mads Brandbyge, Kurt Stokbro

Abstract: QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously presented, the purpose of this paper is to give a general overview of the platform. The QuantumATK simulation engines enable electronic-structure calcul… ▽ More QuantumATK is an integrated set of atomic-scale modelling tools developed since 2003 by professional software engineers in collaboration with academic researchers. While different aspects and individual modules of the platform have been previously presented, the purpose of this paper is to give a general overview of the platform. The QuantumATK simulation engines enable electronic-structure calculations using density functional theory or tight-binding model Hamiltonians, and also offers bonded or reactive empirical force fields in many different parametrizations. Density functional theory is implemented using either a plane-wave basis or expansion of electronic states in a linear combination of atomic orbitals. The platform includes a long list of advanced modules, including Green's-function methods for electron transport simulations and surface calculations, first-principles electron-phonon and electron-photon couplings, simulation of atomic-scale heat transport, ion dynamics, spintronics, optical properties of materials, static polarization, and more. Seamless integration of the different simulation engines into a common platform allows for easy combination of different simulation methods into complex workflows. Besides giving a general overview and presenting a number of implementation details not previously published, we also present four different application examples. These are calculations of the phonon-limited mobility of Cu, Ag and Au, electron transport in a gated 2D device, multi-model simulation of lithium ion drift through a battery cathode in an external electric field, and electronic-structure calculations of the composition-dependent band gap of SiGe alloys. △ Less

Submitted 21 August, 2019; v1 submitted 7 May, 2019; originally announced May 2019.

Comments: Submitted to Journal of Physics: Condensed Matter

Journal ref: Søren Smidstrup et. al. 2020 J. Phys.: Condens. Matter 32 015901

First-principles quantum transport modeling of spin-transfer and spin-orbit torques in magnetic multilayers

Authors: Branislav K. Nikolic, Kapildeb Dolui, Marko Petrović, Petr Plecháč, Troels Markussen, Kurt Stokbro

Abstract: We review a unified approach for computing: (i) spin-transfer torque in magnetic trilayers like spin-valves and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces; and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled-material, where injected charge current flows parallel to the interface. Our approach requires to constr… ▽ More We review a unified approach for computing: (i) spin-transfer torque in magnetic trilayers like spin-valves and magnetic tunnel junction, where injected charge current flows perpendicularly to interfaces; and (ii) spin-orbit torque in magnetic bilayers of the type ferromagnet/spin-orbit-coupled-material, where injected charge current flows parallel to the interface. Our approach requires to construct the torque operator for a given Hamiltonian of the device and the steady-state nonequilibrium density matrix, where the latter is expressed in terms of the nonequilibrium Green's functions and split into three contributions. Tracing these contributions with the torque operator automatically yields field-like and dam**-like components of spin-transfer torque or spin-orbit torque vector, which is particularly advantageous for spin-orbit torque where the direction of these components depends on the unknown-in-advance orientation of the current-driven nonequilibrium spin density in the presence of spin-orbit coupling. We provide illustrative examples by computing spin-transfer torque in a one-dimensional toy model of a magnetic tunnel junction and realistic Co/Cu/Co spin-valve, both of which are described by first-principles Hamiltonians obtained from noncollinear density functional theory calculations; as well as spin-orbit torque in a ferromagnetic layer described by a tight-binding Hamiltonian which includes spin-orbit proximity effect within ferromagnetic monolayers assumed to be generated by the adjacent monolayer transition metal dichalcogenide. △ Less

Submitted 29 April, 2018; v1 submitted 17 January, 2018; originally announced January 2018.

Comments: 22 pages, 9 figures, PDFLaTeX; prepared for Springer Handbook of Materials Modeling, Volume 2 Applications: Current and Emerging Materials

Journal ref: Chapter in W. Andreoni and S. Yip (Eds.) Handbook of Materials Modeling (Springer, Cham, 2019)

Efficient first-principles calculation of phonon assisted photocurrent in large-scale solar cell devices

Authors: Mattias Palsgaard, Troels Markussen, Tue Gunst, Mads Brandbyge, Kurt Stokbro

Abstract: We present a straightforward and computationally cheap method to obtain the phonon-assisted photocurrent in large-scale devices from first-principles transport calculations. The photocurrent is calculated using nonequilibrium Green's function with light-matter interaction from the first-order Born approximation while electron-phonon coupling (EPC) is included through special thermal displacements… ▽ More We present a straightforward and computationally cheap method to obtain the phonon-assisted photocurrent in large-scale devices from first-principles transport calculations. The photocurrent is calculated using nonequilibrium Green's function with light-matter interaction from the first-order Born approximation while electron-phonon coupling (EPC) is included through special thermal displacements (STD). We apply the method to a silicon solar cell device and demonstrate the impact of including EPC in order to properly describe the current due to the indirect band-to-band transitions. The first-principles results are successfully compared to experimental measurements of the temperature and light intensity dependence of the open-circuit voltage of a silicon photovoltaic module. Our calculations illustrate the pivotal role played by EPC in photocurrent modelling to avoid underestimation of the open-circuit voltage, short-circuit current and maximum power. This work represents a recipe for computational characterization of future photovoltaic devices including the combined effects of light-matter interaction, phonon-assisted tunneling and the device potential at finite bias from the level of first-principles simulations. △ Less

Submitted 11 January, 2018; originally announced January 2018.

Journal ref: Phys. Rev. Applied 10, 014026 (2018)

First-Principles Electron Transport with Phonon Coupling: Large-Scale at Low Cost

Authors: Tue Gunst, Troels Markussen, Mattias L. N. Palsgaard, Kurt Stokbro, Mads Brandbyge

Abstract: Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special thermal displacement" (STD) of the atomic coordinates at almost the same cost as elastic transport calculations. We apply the method to ultra-scaled silicon devic… ▽ More Phonon-assisted tunneling plays a crucial role for electronic device performance and even more so with future size down-scaling. We show how one can include this effect in large-scale first-principles calculations using a single "special thermal displacement" (STD) of the atomic coordinates at almost the same cost as elastic transport calculations. We apply the method to ultra-scaled silicon devices and demonstrate the importance of phonon-assisted band-to-band and source-to-drain tunneling. In a diode the phonons lead to a rectification ratio suppression in good agreement with experiments, while in an ultra-thin body transistor the phonons increase off-currents by four orders of magnitude, and the subthreshold swing by a factor of four, in agreement with perturbation theory. △ Less

Submitted 18 October, 2017; v1 submitted 28 June, 2017; originally announced June 2017.

Journal ref: Phys. Rev. B 96, 161404 (2017)

Interface band gap narrowing behind open circuit voltage losses in Cu$_2$ZnSnS$_4$ solar cells

Authors: Andrea Crovetto, Mattias Palsgaard, Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge, Ole Hansen

Abstract: We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calcu… ▽ More We present evidence that band gap narrowing at the heterointerface may be a major cause of the large open circuit voltage deficit of Cu$_2$ZnSnS$_4$/CdS solar cells. Band gap narrowing is caused by surface states that extend the Cu$_2$ZnSnS$_4$ valence band into the forbidden gap. Those surface states are consistently found in Cu$_2$ZnSnS$_4$, but not in Cu$_2$ZnSnSe$_4$, by first-principles calculations. They do not simply arise from defects at surfaces but are an intrinsic feature of Cu$_2$ZnSnS$_4$ surfaces. By including those states in a device model, the outcome of previously published temperature-dependent open circuit voltage measurements on Cu$_2$ZnSnS$_4$ solar cells can be reproduced quantitatively without necessarily assuming a cliff-like conduction band offset with the CdS buffer layer. Our first-principles calculations indicate that Zn-based alternative buffer layers are advantageous due to the ability of Zn to passivate those surface states. Focusing future research on Zn-based buffers is expected to significantly improve the open circuit voltage and efficiency of pure-sulfide Cu$_2$ZnSnS$_4$ solar cells. △ Less

Submitted 14 February, 2017; originally announced February 2017.

Comments: Accepted at Applied Physics Letters

Electron-phonon scattering from Green's function transport combined with Molecular Dynamics: Applications to mobility predictions

Authors: Troels Markussen, Mattias Palsgaard, Daniele Stradi, Tue Gunst, Mads Brandbyge, Kurt Stokbro

Abstract: We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent transmission from which we evaluate the mobility. We validate our approach by comparing to mobilities and conductivies obtained by the Boltzmann transport equation (BT… ▽ More We present a conceptually simple method for treating electron-phonon scattering and phonon limited mobilities. By combining Green's function based transport calculations and molecular dynamics (MD), we obtain a temperature dependent transmission from which we evaluate the mobility. We validate our approach by comparing to mobilities and conductivies obtained by the Boltzmann transport equation (BTE) for different bulk and one-dimensional systems. For bulk silicon and gold we successfully compare against experimental values. We discuss limitations and advantages of each of the computational approaches. △ Less

Submitted 11 January, 2017; originally announced January 2017.

Comments: 8 pages, 8 figures

Journal ref: Phys. Rev. B 95, 245210 (2017)

Inelastic vibrational signals in electron transport across graphene nanoconstrictions

Authors: Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge

Abstract: We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based o… ▽ More We present calculations of the inelastic vibrational signals in the electrical current through a graphene nanoconstriction. We find that the inelastic signals are only present when the Fermi-level position is tuned to electron transmission resonances, thus, providing a fingerprint which can link an electron transmission resonance to originate from the nanoconstriction. The calculations are based on a novel first-principles method which includes the phonon broadening due to coupling with phonons in the electrodes. We find that the signals are modified due to the strong coupling to the electrodes, however, still remain as robust fingerprints of the vibrations in the nanoconstriction. We investigate the effect of including the full self-consistent potential drop due to finite bias and gate do** on the calculations and find this to be of minor importance. △ Less

Submitted 10 April, 2016; originally announced April 2016.

Journal ref: Phys. Rev. B 93, 245415 (2016)

First-principles method for electron-phonon coupling and electron mobility: Applications to 2D materials

Authors: Tue Gunst, Troels Markussen, Kurt Stokbro, Mads Brandbyge

Abstract: We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes i… ▽ More We present density functional theory calculations of the phonon-limited mobility in n-type monolayer graphene, silicene and MoS$_2$. The material properties, including the electron-phonon interaction, are calculated from first-principles. We provide a detailed description of the normalized full-band relaxation time approximation for the linearized Boltzmann transport equation (BTE) that includes inelastic scattering processes. The bulk electron-phonon coupling is evaluated by a supercell method. The method employed is fully numerical and does therefore not require a semi-analytic treatment of part of the problem and, importantly, it keeps the anisotropy information stored in the coupling as well as the band structure. In addition, we perform calculations of the low-field mobility and its dependence on carrier density and temperature to obtain a better understanding of transport in graphene, silicene and monolayer MoS$_2$. Unlike graphene, the carriers in silicene show strong interaction with the out-of-plane modes. We find that graphene has more than an order of magnitude higher mobility compared to silicene. For MoS$_2$, we obtain several orders of magnitude lower mobilities in agreement with other recent theoretical results. The simulations illustrate the predictive capabilities of the newly implemented BTE solver applied in simulation tools based on first-principles and localized basis sets. △ Less

Submitted 6 November, 2015; originally announced November 2015.

Journal ref: Phys. Rev. B 93, 035414 (2016)

Nonequilibrium spin texture within a thin layer below the surface of current-carrying topological insulator Bi$_2$Se$_3$: A first-principles quantum transport study

Authors: Po-Hao Chang, Troels Markussen, Søren Smidstrup, Kurt Stokbro, Branislav K. Nikolić

Abstract: We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the nonequilibrium spin texture will extend into $\simeq 2$ nm thick layer below the TI surfaces due to penetration of evanescent wavefunctions from the metallic s… ▽ More We predict that unpolarized charge current injected into a ballistic thin film of prototypical topological insulator (TI) Bi$_2$Se$_3$ will generate a {\it noncollinear spin texture} $\mathbf{S}(\mathbf{r})$ on its surface. Furthermore, the nonequilibrium spin texture will extend into $\simeq 2$ nm thick layer below the TI surfaces due to penetration of evanescent wavefunctions from the metallic surfaces into the bulk of TI. Averaging $\mathbf{S}(\mathbf{r})$ over few Å along the longitudinal direction defined by the current flow reveals large component pointing in the transverse direction. In addition, we find an order of magnitude smaller out-of-plane component when the direction of injected current with respect to Bi and Se atoms probes the largest hexagonal war** of the Dirac-cone dispersion on TI surface. Our analysis is based on an extension of the nonequilibrium Green functions combined with density functional theory (NEGF+DFT) to situations involving noncollinear spins and spin-orbit coupling. We also demonstrate how DFT calculations with properly optimized local orbital basis set can precisely match putatively more accurate calculations with plane-wave basis set for the supercell of Bi$_2$Se$_3$. △ Less

Submitted 30 July, 2015; v1 submitted 27 March, 2015; originally announced March 2015.

Comments: 5 pages, 4 figures, PDFLaTeX

Journal ref: Phys. Rev. B 92, 201406 (2015)

Electron transport across a metal/MoS$_2$ interface: dependence on contact area and binding distance

Authors: Zhaoqiang Bai, Troels Markussen, Kristian S. Thygesen

Abstract: We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX$_2$, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is placed ontop of the close-packed surfaces of the metal electrodes and we focus on the role of the metal-MoX$_2$ binding distance and the contact area. Based on \emph{ab initio} transport calculations we identify two differen… ▽ More We investigate the nature of electron transport through monolayer molybdenum dichalcogenides (MoX$_2$, X=S, Se) suspended between Au and Ti metallic contacts. The monolayer is placed ontop of the close-packed surfaces of the metal electrodes and we focus on the role of the metal-MoX$_2$ binding distance and the contact area. Based on \emph{ab initio} transport calculations we identify two different scattering mechanisms which depend differently on the metal-MoX$_2$ binding distance: (i) An interface resistance between the metal and the supported part of MoX$_2$ which decreases with decreasing binding distance and increasing contact area. (ii) An edge resistance across the 1D interface between metal-supported and free-standing MoX$_2$ which increases with decreasing binding distance and is independent on contact area. The origin of the edge resistance is a metal-induced potential shift within the MoX$_2$ layer. The optimal metal thus depends on the junction geometry. In the case of MoS$_2$, we find that for short contacts, L$<$6 nm, Ti electrodes (with short binding distance) gives the lowest resistance, while for longer contacts, Au (large binding distance) is a better electrode metal. △ Less

Submitted 11 November, 2013; originally announced November 2013.

Carbon nanotubes as heat dissipaters in microelectronics

Authors: Alejandro Pérez Paz, Juan María García-Lastra, Troels Markussen, Kristian Sommer Thygesen, Angel Rubio

Abstract: We review our recent modelling work of carbon nanotubes as potential candidates for heat dissipation in microelectronics cooling. In the first part, we analyze the impact of nanotube defects on their thermal transport properties. In the second part, we investigate the loss of thermal properties of nanotubes in presence of an interface with various substances, including air and water. Comparison wi… ▽ More We review our recent modelling work of carbon nanotubes as potential candidates for heat dissipation in microelectronics cooling. In the first part, we analyze the impact of nanotube defects on their thermal transport properties. In the second part, we investigate the loss of thermal properties of nanotubes in presence of an interface with various substances, including air and water. Comparison with previous works is established whenever is possible. △ Less

Submitted 26 September, 2013; originally announced September 2013.

Comments: 14 pages, 21 figures, 5 tables

Journal ref: Eur. Phys. J. B 86:234 (2013)

Phonon Interference Effects in Molecular Junctions

Authors: Troels Markussen

Abstract: We study coherent phonon transport through organic, π-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar m… ▽ More We study coherent phonon transport through organic, π-conjugated molecules. Using first principles calculations and Green's function methods, we find that the phonon transmission function in cross-conjugated molecules, like meta-connected benzene, exhibits destructive quantum interference features very analogous to those observed theoretically and experimentally for electron transport in similar molecules. The destructive interference features observed in four different cross-conjugated molecules significantly reduce the thermal conductance with respect to linear conjugated analogues. Such control of the thermal conductance by chemical modifications could be important for thermoelectric applications of molecular junctions. △ Less

Submitted 12 August, 2013; originally announced August 2013.

Comments: 10 pages, 10 figures

Quantitatively Accurate Calculations of Conductance and Thermopower of Molecular Junctions

Authors: Troels Markussen, Chengjun **, Kristian S. Thygesen

Abstract: Thermopower measurements of molecular junctions have recently gained interest as a characterization technique that supplements the more traditional conductance measurements. Here we investigate the electronic conductance and thermopower of benzenediamine (BDA) and benzenedicarbonitrile (BDCN) connected to gold electrodes using first-principles calculations. We find excellent agreement with experim… ▽ More Thermopower measurements of molecular junctions have recently gained interest as a characterization technique that supplements the more traditional conductance measurements. Here we investigate the electronic conductance and thermopower of benzenediamine (BDA) and benzenedicarbonitrile (BDCN) connected to gold electrodes using first-principles calculations. We find excellent agreement with experiments for both molecules when exchange-correlation effects are described by the many-body GW approximation. In contrast, results from standard density functional theory (DFT) deviate from experiments by up to two orders of magnitude. The failure of DFT is particularly pronounced for the n-type BDCN junction due to the severe underestimation of the lowest unoccupied molecular orbital (LUMO). The quality of the DFT results can be improved by correcting the molecular energy levels for self-interaction errors and image charge effects. Finally, we show that the conductance and thermopower of the considered junctions are relatively insensitive to the metal-molecule bonding geometry. Our results demonstrate that electronic and thermoelectric properties of molecular junctions can be predicted from first-principles calculations when exchange-correlation effects are taken properly into account. △ Less

Submitted 14 May, 2013; originally announced May 2013.

Comments: Submitted to special issue of pss (b)

Graphene antidot lattice waveguides

Authors: Jesper Goor Pedersen, Tue Gunst, Troels Markussen, Thomas Garm Pedersen

Abstract: We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gap in the surrounding antidot lattices enable localized states to emerge in the central waveguide region. We model the waveguides via a position-dependent mass term in the Dirac approximation of graphene, and arrive at a… ▽ More We introduce graphene antidot lattice waveguides: nanostructured graphene where a region of pristine graphene is sandwiched between regions of graphene antidot lattices. The band gap in the surrounding antidot lattices enable localized states to emerge in the central waveguide region. We model the waveguides via a position-dependent mass term in the Dirac approximation of graphene, and arrive at analytical results for the dispersion relation and spinor eigenstates of the localized waveguide modes. To include atomistic details we also use a tight-binding model, which is in excellent agreement with the analytical results. The waveguides resemble graphene nanoribbons, but without the particular properties of ribbons that emerge due to the details of the edge. We show that electrons can be guided through kinks without additional resistance and that transport through the waveguides is robust against structural disorder. △ Less

Submitted 19 November, 2012; originally announced November 2012.

Comments: 9 pages, 7 figures, accepted for publication in Physical Review B

Journal ref: Phys. Rev. B 86, 245410 (2012)

Thermoelectric properties of disordered graphene antidot devices

Authors: Tue Gunst, **g-Tao Lü, Troels Markussen, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We calculate the electronic and thermal transport properties of devices based on finite graphene antidot lattices (GALs) connected to perfect graphene leads. We use an atomistic approach based on the $π$-tight-binding model, the Brenner potential, and employing recursive Green's functions. We consider the effect of random disorder on the electronic and thermal transport properties, and examine the… ▽ More We calculate the electronic and thermal transport properties of devices based on finite graphene antidot lattices (GALs) connected to perfect graphene leads. We use an atomistic approach based on the $π$-tight-binding model, the Brenner potential, and employing recursive Green's functions. We consider the effect of random disorder on the electronic and thermal transport properties, and examine the potential gain of thermoelectric merit by tailoring of the disorder. We propose several routes to optimize the transport properties of the GAL systems. Finally, we illustrate how quantum thermal transport can be addressed by molecular dynamics simulations, and compare to the Green's function results for the GAL systems in the ballistic limit. △ Less

Submitted 14 September, 2012; originally announced September 2012.

Comments: Conference Proceedings; 2012, 15th International Workshop on Computational Electronics (IWCE); 2012 15th International Workshop on Computational Electronics (IWCE)

First-principles quantum transport modeling of thermoelectricity in single-molecule nanojunctions with graphene nanoribbon electrodes

Authors: Branislav K. Nikolic, Kamal K. Saha, Troels Markussen, Kristian S. Thygesen

Abstract: We overview nonequilibrium Green function combined with density functional theory (NEGF-DFT) modeling of independent electron and phonon transport in nanojunctions with applications focused on a new class of thermoelectric devices where a single molecule is attached to two metallic zigzag graphene nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make possible injection of evanesc… ▽ More We overview nonequilibrium Green function combined with density functional theory (NEGF-DFT) modeling of independent electron and phonon transport in nanojunctions with applications focused on a new class of thermoelectric devices where a single molecule is attached to two metallic zigzag graphene nanoribbons (ZGNRs) via highly transparent contacts. Such contacts make possible injection of evanescent wavefunctions from ZGNRs, so that their overlap within the molecular region generates a peak in the electronic transmission. Additionally, the spatial symmetry properties of the transverse propagating states in the ZGNR electrodes suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with diminished phonon conductance through a ZGNR/molecule/ZGNR inhomogeneous structure, yields the thermoelectric figure of merit ZT~0.5 at room temperature and 0.5<ZT<2.5 below liquid nitrogen temperature. The reliance on evanescent mode transport and symmetry of propagating states in the electrodes makes the electronic-transport-determined power factor in this class of devices largely insensitive to the type of sufficiently short conjugated organic molecule, which we demonstrate by showing that both 18-annulene and C10 molecule sandwiched by the two ZGNR electrodes yield similar thermopower. Thus, one can search for molecules that will further reduce the phonon thermal conductance (in the denominator of ZT) while kee** the electronic power factor (in the nominator of ZT) optimized. We also show how often employed Brenner empirical interatomic potential for hydrocarbon systems fails to describe phonon transport in our single-molecule nanojunctions when contrasted with first-principles results obtained via NEGF-DFT methodology. △ Less

Submitted 31 October, 2011; originally announced November 2011.

Comments: 20 pages, 6 figures; mini-review article prepared for the special issue of the Journal of Computational Electronics on "Simulation of Thermal, Thermoelectric, and Electrothermal Phenomena in Nanostructures", edited by I. Knezevic and Z. Aksamija

Journal ref: J. Comp. Electronics 11, 78 (2012)

Observation of Quantum Interference in Molecular Charge Transport

Authors: Constant M. Guedon, Hennie Valkenier, Troels Markussen, Kristian S. Thygesen, Jan C. Hummelen, Sense Jan van der Molen

Abstract: As the dimensions of a conductor approach the nano-scale, quantum effects will begin to dominate its behavior. This entails the exciting possibility of controlling the conductance of a device by direct manipulation of the electron wave function. Such control has been most clearly demonstrated in mesoscopic semiconductor structures at low temperatures. Indeed, the Aharanov-Bohm effect, conductance… ▽ More As the dimensions of a conductor approach the nano-scale, quantum effects will begin to dominate its behavior. This entails the exciting possibility of controlling the conductance of a device by direct manipulation of the electron wave function. Such control has been most clearly demonstrated in mesoscopic semiconductor structures at low temperatures. Indeed, the Aharanov-Bohm effect, conductance quantization and universal conductance fluctuations are direct manifestations of the electron wave nature. However, an extension of this concept to more practical emperatures has not been achieved so far. As molecules are nano-scale objects with typical energy level spacings (~eV) much larger than the thermal energy at 300 K (~25 meV), they are natural candidates to enable such a break-through. Fascinating phenomena including giant magnetoresistance, Kondo effects and conductance switching, have previously been demonstrated at the molecular level. Here, we report direct evidence for destructive quantum interference in charge transport through two-terminal molecular junctions at room temperature. Furthermore, we show that the degree of interference can be controlled by simple chemical modifications of the molecule. Not only does this provide the experimental demonstration of a new phenomenon in quantum charge transport, it also opens the road for a new type of molecular devices based on chemical or electrostatic control of quantum interference. △ Less

Submitted 22 August, 2011; originally announced August 2011.

Thermoelectric properties of finite graphene antidot lattices

Authors: Tue Gunst, Troels Markussen, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on a single orbital tight-binding model and the Brenner potential. We show that both electronic and thermal transport properties converge fast toward the bulk limit with increasing length of the lattice: only a few re… ▽ More We present calculations of the electronic and thermal transport properties of graphene antidot lattices with a finite length along the transport direction. The calculations are based on a single orbital tight-binding model and the Brenner potential. We show that both electronic and thermal transport properties converge fast toward the bulk limit with increasing length of the lattice: only a few repetitions (~6) of the fundamental unit cell are required to recover the electronic band gap of the infinite lattice as a transport gap for the finite lattice. We investigate how different antidot shapes and sizes affect the thermoelectric properties. The resulting thermoelectric figure of merit, ZT, can exceed 0.25, and it is highly sensitive to the atomic arrangement of the antidot edges. Specifically, hexagonal holes with pure zigzag edges lead to an order-of-magnitude smaller ZT as compared to pure armchair edges. We explain this behavior as a consequence of the localization of states, which predominantly occurs for zigzag edges, and of an increased splitting of the electronic minibands, which reduces the power factor. △ Less

Submitted 28 July, 2011; originally announced July 2011.

Comments: 12 pages, 13 figures. Submitted to Phys. Rev. B

Journal ref: Phys. Rev. B 84, 155449 (2011)

Controlling the transmission line shape of molecular t-stubs and potential thermoelectric applications

Authors: Robert Stadler, Troels Markussen

Abstract: Asymmetric line shapes can occur in the transmission function describing electron transport in the vicinity of a minimum caused by quantum interference effects. Such asymmetry can be used to increase the thermoelectric efficiency of molecular junctions. So far, however, asymmetric line shapes have been only empirically found for just a few rather complex organic molecules where the origins of the… ▽ More Asymmetric line shapes can occur in the transmission function describing electron transport in the vicinity of a minimum caused by quantum interference effects. Such asymmetry can be used to increase the thermoelectric efficiency of molecular junctions. So far, however, asymmetric line shapes have been only empirically found for just a few rather complex organic molecules where the origins of the line shapes relation to molecular structure were not resolved. In the present work we introduce a method to analyze the structure dependence of the asymmetry of interference dips from simple two site tight-binding models, where one site corresponds to a molecular $π$ orbital of the wire and the other to an atomic $p_z$ orbital of a side group, which allows us to analytically characterize the peak shape in terms of just two parameters. We assess our scheme with first-principles electron transport calculations for a variety of {\it t-stub} molecules and also address their suitability for thermoelectric applications. △ Less

Submitted 11 October, 2011; v1 submitted 18 June, 2011; originally announced June 2011.

Comments: 11 pages, 5 figures; J. Chem. Phys., in print (2011)

Graphical prediction of quantum interference-induced transmission nodes in functionalized organic molecules

Authors: Troels Markussen, Robert Stadler, Kristian S. Thygesen

Abstract: Quantum interference (QI) in molecular transport junctions can lead to dramatic reductions of the electron transmission at certain energies. In a recent work [Markussen et al., Nano Lett. 2010, 10, 4260] we showed how the presence of such transmission nodes near the Fermi energy can be predicted solely from the structure of a conjugated molecule when the energies of the atomic p_z orbitals do not… ▽ More Quantum interference (QI) in molecular transport junctions can lead to dramatic reductions of the electron transmission at certain energies. In a recent work [Markussen et al., Nano Lett. 2010, 10, 4260] we showed how the presence of such transmission nodes near the Fermi energy can be predicted solely from the structure of a conjugated molecule when the energies of the atomic p_z orbitals do not vary too much. Here we relax the assumption of equal on-site energies and generalize the graphical scheme to molecules containing different atomic species. We use this diagrammatic scheme together with tight-binding and density functional theory calculations to investigate QI in linear molecular chains and aromatic molecules with different side groups. For the molecular chains we find a linear relation between the position of the transmission nodes and the side group pi orbital energy. In contrast, the transmission functions of functionalized aromatic molecules generally display a rather complex nodal structure due to the interplay between molecular topology and the energy of the side group orbital. △ Less

Submitted 18 June, 2011; originally announced June 2011.

Comments: 7 pages

Journal ref: Phys. Chem. Chem. Phys., in print (2011)

Multiterminal single-molecule--graphene-nanoribbon thermoelectric devices with gate-voltage tunable figure of merit ZT

Authors: Kamal K. Saha, Troels Markussen, Kristian S. Thygesen, Branislav K. Nikolic

Abstract: We study thermoelectric devices where a single 18-annulene molecule is connected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparent contacts that allow for injection of evanescent wave functions from ZGNRs into the molecular ring. Their overlap generates a peak in the electronic transmission, while ZGNRs additionally suppress hole-like contributions to the thermopower. Thus opti… ▽ More We study thermoelectric devices where a single 18-annulene molecule is connected to metallic zigzag graphene nanoribbons (ZGNR) via highly transparent contacts that allow for injection of evanescent wave functions from ZGNRs into the molecular ring. Their overlap generates a peak in the electronic transmission, while ZGNRs additionally suppress hole-like contributions to the thermopower. Thus optimized thermopower, together with suppression of phonon transport through ZGNR-molecule-ZGNR structure, yield the thermoelectric figure of merit ZT ~ 0.5 at room temperature and 0.5 < ZT < 2.5 below liquid nitrogen temperature. Using the nonequilibrium Green function formalism combined with density functional theory, recently extended to multiterminal devices, we show how the transmission resonance can also be manipulated by the voltage applied to a third ZGNR electrode, acting as the top gate covering molecular ring, to tune the value of ZT. △ Less

Submitted 2 March, 2011; originally announced March 2011.

Comments: 5 pages, 4 figures, PDFLaTeX

Journal ref: Phys. Rev. B 84, 041412(R) (2011)

Improving Transition Voltage Spectroscopy of Molecular Junctions

Authors: Troels Markussen, **gzhe Chen, Kristian S. Thygesen

Abstract: Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where $\ln(I/V^2)$ is plotted against $1/V$ and relate the voltage at the minimum, $V_{\rm min}$, to the closest molecular level. Importantly, $V_{\rm min}$, is approximately half the voltage required to see a peak in the $dI/dV$ cu… ▽ More Transition voltage spectroscopy (TVS) is a promising spectroscopic tool for molecular junctions. The principles in TVS is to find the minimum on a Fowler-Nordheim plot where $\ln(I/V^2)$ is plotted against $1/V$ and relate the voltage at the minimum, $V_{\rm min}$, to the closest molecular level. Importantly, $V_{\rm min}$, is approximately half the voltage required to see a peak in the $dI/dV$ curve. Information about the molecular level position can thus be obtained at relatively low voltages. In this work we show that the molecular level position can be determined at even lower voltages, $V_{\rm min}^{(α)}$ by finding the minimum of $\ln(I/V^α)$ with $α<2$. On the basis of a simple Lorentzian transmission model we analyze theoretical {\it ab initio} as well as experimental $I-V$ curves and show that the voltage required to determine the molecular levels can be reduced by $\sim 30%$ as compared to conventional TVS. As for conventional TVS, the symmetry/asymmetry of the molecular junction needs to be taken into account in order to gain quantitative information. We show that the degree of asymmetry may be estimated from a plot of $V_{\rm min}^{(α)}$ vs. $α$. △ Less

Submitted 16 December, 2010; originally announced December 2010.

Comments: 6 pages, 8 figures

Quantifying Transition Voltage Spectroscopy of Molecular Junctions

Authors: **gzhe Chen, Troels Markussen, Kristian S. Thygesen

Abstract: Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab-initio calculations of the non-linear current voltage relations for a broad class of single-molecule transport junctions in order to assess the appli… ▽ More Transition voltage spectroscopy (TVS) has recently been introduced as a spectroscopic tool for molecular junctions where it offers the possibility to probe molecular level energies at relatively low bias voltages. In this work we perform extensive ab-initio calculations of the non-linear current voltage relations for a broad class of single-molecule transport junctions in order to assess the applicability and limitations of TVS. We find, that in order to fully utilize TVS as a quantitative spectroscopic tool, it is important to consider asymmetries in the coupling of the molecule to the two electrodes. When this is taken properly into account, the relation between the transition voltage and the energy of the molecular orbital closest to the Fermi level closely follows the trend expected from a simple, analytical model. △ Less

Submitted 26 August, 2010; v1 submitted 21 May, 2010; originally announced May 2010.

Comments: 5 pages, 4 figures. To appear in PRB

Electrochemical control of quantum interference in anthraquinone-based molecular switches

Authors: Troels Markussen, Jakob Schiøtz, Kristian S. Thygesen

Abstract: Using first-principles calculations we analyze the electronic transport properties of a recently proposed anthraquinone based electrochemical switch. Robust conductance on/off ratios of several orders of magnitude are observed due to destructive quantum interference present in the anthraquinone, but absent in the hydroquinone molecular bridge. A simple explanation of the interference effect is ach… ▽ More Using first-principles calculations we analyze the electronic transport properties of a recently proposed anthraquinone based electrochemical switch. Robust conductance on/off ratios of several orders of magnitude are observed due to destructive quantum interference present in the anthraquinone, but absent in the hydroquinone molecular bridge. A simple explanation of the interference effect is achieved by transforming the frontier molecular orbitals into localized molecular orbitals thereby obtaining a minimal tight-binding model describing the transport in the relevant energy range in terms of hop** via the localized orbitals. The topology of the tight-binding model, which is dictated by the symmetries of the molecular orbitals, determines the amount of quantum interference. △ Less

Submitted 4 May, 2010; originally announced May 2010.

Comments: 6 pages, 6 figures

Ab initio vibrations in nonequilibrium nanowires

Authors: A. P. Jauho, M. Engelund, T. Markussen, M. Brandbyge

Abstract: We review recent results on electronic and thermal transport in two different quasi one-dimensional systems: Silicon nanowires (SiNW) and atomic gold chains. For SiNW's we compute the ballistic electronic and thermal transport properties on equal footing, allowing us to make quantitative predictions for the thermoelectric properties, while for the atomic gold chains we evaluate microscopically the… ▽ More We review recent results on electronic and thermal transport in two different quasi one-dimensional systems: Silicon nanowires (SiNW) and atomic gold chains. For SiNW's we compute the ballistic electronic and thermal transport properties on equal footing, allowing us to make quantitative predictions for the thermoelectric properties, while for the atomic gold chains we evaluate microscopically the dam** of the vibrations, due to the coupling of the chain atoms to the modes in the bulk contacts. Both approaches are based on a combination of density-functional theory, and nonequilibrium Green's functions. △ Less

Submitted 8 April, 2010; originally announced April 2010.

Comments: 16 pages, to appear in Progress in Nonequilibrium Green's Functions IV (PNGF4), Eds. M. Bonitz and K. Baltzer, Glasgow, August 2009

Surface decorated silicon nanowires: a route to high-ZT thermoelectrics

Authors: Troels Markussen, Antti-Pekka Jauho, Mads Brandbyge

Abstract: Based on atomistic calculations of electron and phonon transport, we propose to use surface decorated Silicon nanowires (SiNWs) for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying deas: Nanotrees and alkyl functionalized SiNWs. For both systems we find, (i) that the phonon conductance is significantly reduced compared to the electronic co… ▽ More Based on atomistic calculations of electron and phonon transport, we propose to use surface decorated Silicon nanowires (SiNWs) for thermoelectric applications. Two examples of surface decorations are studied to illustrate the underlying deas: Nanotrees and alkyl functionalized SiNWs. For both systems we find, (i) that the phonon conductance is significantly reduced compared to the electronic conductance leading to high thermoelectric figure of merit, $ZT$, and (ii) for ultra-thin wires surface decoration leads to significantly better performance than surface disorder. △ Less

Submitted 13 July, 2009; originally announced July 2009.

Comments: Accepted for PRL

Electronic Transport Properties of Carbon NanoBuds

Authors: J. A. Furst, J. Hashemi, T. Markussen, M. Brandbyge, A. P. Jauho, R. M. Nieminen

Abstract: Fullerene functionalized carbon nanotubes -- NanoBuds -- form a novel class of hybrid carbon materials, which possesses many advantageous properties as compared to the pristine components. Here, we report a theoretical study of the electronic transport properties of these compounds. We use both ab initio techniques and tight-binding calculations to illustrate these materials' transmission proper… ▽ More Fullerene functionalized carbon nanotubes -- NanoBuds -- form a novel class of hybrid carbon materials, which possesses many advantageous properties as compared to the pristine components. Here, we report a theoretical study of the electronic transport properties of these compounds. We use both ab initio techniques and tight-binding calculations to illustrate these materials' transmission properties, and give physical arguments to interpret the numerical results. Specifically, above the Fermi energy we find a strong reduction of electron transmission due to localized states in certain regions of the structure while below the Fermi energy all considered structures exhibit a high-transmission energy band with a geometry dependent width. △ Less

Submitted 7 May, 2009; originally announced May 2009.

Heat conductance is strongly anisotropic for pristine silicon nanowires

Authors: Troels Markussen, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We compute atomistically the heat conductance for ultra-thin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the <110> direction have 50-75% larger conductance than wires oriented along the <100> and <111> directions. We show that the anisotropies can be qualitatively unders… ▽ More We compute atomistically the heat conductance for ultra-thin pristine silicon nanowires (SiNWs) with diameters ranging from 1 to 5 nm. The room temperature thermal conductance is found to be highly anisotropic: wires oriented along the <110> direction have 50-75% larger conductance than wires oriented along the <100> and <111> directions. We show that the anisotropies can be qualitatively understood and reproduced from the bulk phonon band structure. Ab initio density functional theory (DFT) is used to study the thinnest wires, but becomes computationally prohibitive for larger diameters, where we instead use the Tersoff empirical potential model (TEP). For the smallest wires, the thermal conductances obtained from DFT- and TEP calculations agree within 10%. The presented results could be relevant for future phonon-engineering of nanowire devices. △ Less

Submitted 8 January, 2009; originally announced January 2009.

Comments: 7 pages, 5 figures

Journal ref: Nano Letters 8, 3771-3775, (2008)

Electron- and phonon transport in silicon nanowires: an atomistic approach to thermoelectric properties

Authors: Troels Markussen, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface disorder is modeled by including surface silicon vacancies. It is shown that the average phonon- and electron transmissions through long SiNWs containing many va… ▽ More We compute both electron- and phonon transmissions in thin disordered silicon nanowires. Our atomistic approach is based on tight-binding and empirical potential descriptions of the electronic and phononic systems, respectively. Surface disorder is modeled by including surface silicon vacancies. It is shown that the average phonon- and electron transmissions through long SiNWs containing many vacancies can be accurately estimated from the scattering properties of the isolated vacancies using a recently proposed averaging method [Phys. Rev. Lett. 99, 076803 (2007)]. We apply this averaging method to surface disordered SiNWs in the diameter range 1-3 nm to compute the thermoelectric figure of merit, ZT. It is found that the phonon transmission is affected more by the vacancies than the electronic transmission leading to an increased thermoelectric performance of disordered wires, in qualitative agreement with recent experiments. The largest ZT>3 is found in strongly disordered <111> oriented wires with a diameter of 2 nm. △ Less

Submitted 30 October, 2008; originally announced October 2008.

Comments: 8 pages, 8 figures

Transport in Silicon Nanowires: Role of Radial Dopant Profile

Authors: Troels Markussen, Riccardo Rurali, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the… ▽ More We consider the electronic transport properties of phosphorus (P) doped silicon nanowires (SiNWs). By combining ab initio density functional theory (DFT) calculations with a recursive Green's function method, we calculate the conductance distribution of up to 200 nm long SiNWs with different distributions of P dopant impurities. We find that the radial distribution of the dopants influences the conductance properties significantly: Surface doped wires have longer mean-free paths and smaller sample-to-sample fluctuations in the cross-over from ballistic to diffusive transport. These findings can be quantitatively predicted in terms of the scattering properties of the single dopant atoms, implying that relatively simple calculations are sufficient in practical device modeling △ Less

Submitted 8 January, 2008; originally announced January 2008.

Comments: Submitted to Journal of Computational Electronics, presented in IWCE-12

Scaling theory put into practice: first-principles modeling of transport in doped silicon nanowires

Authors: Troels Markussen, Riccardo Rurali, Antti-Pekka Jauho, Mads Brandbyge

Abstract: We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the cross-over from ballistic to diffusive transport in boron (B) or phosphorus (P) doped Si-nanowires by computing the mean free path, sample averaged conductance <G>, and sample-to-sample variations… ▽ More We combine the ideas of scaling theory and universal conductance fluctuations with density-functional theory to analyze the conductance properties of doped silicon nanowires. Specifically, we study the cross-over from ballistic to diffusive transport in boron (B) or phosphorus (P) doped Si-nanowires by computing the mean free path, sample averaged conductance <G>, and sample-to-sample variations std(G) as a function of energy, do** density, wire length, and the radial dopant profile. Our main findings are: (i) the main trends can be predicted quantitatively based on the scattering properties of single dopants; (ii) the sample-to-sample fluctuations depend on energy but not on do** density, thereby displaying a degree of universality, and (iii) in the diffusive regime the analytical predictions of the DMPK theory are in good agreement with our ab initio calculations. △ Less

Submitted 26 June, 2007; originally announced June 2007.

Comments: Accepted for PRL

Electronic transport in Si nanowires: Role of bulk and surface disorder

Authors: Troels Markussen, Riccardo Rurali, Mads Brandbyge, Antti-Pekka Jauho

Abstract: We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two approaches and find that they are complementary: depending on the situation a preferable method can be identified. Several numerical results are presented to illu… ▽ More We calculate the resistance and mean free path in long metallic and semiconducting silicon nanowires (SiNWs) using two different numerical approaches: A real space Kubo method and a recursive Green's function method. We compare the two approaches and find that they are complementary: depending on the situation a preferable method can be identified. Several numerical results are presented to illustrate the relative merits of the two methods. Our calculations of relaxed atomic structures and their conductance properties are based on density functional theory without introducing adjustable parameters. Two specific models of disorder are considered: Un-passivated, surface reconstructed SiNWs are perturbed by random on-site (Anderson) disorder whereas defects in hydrogen passivated wires are introduced by randomly removed H atoms. The un-passivated wires are very sensitive to disorder in the surface whereas bulk disorder has almost no influence. For the passivated wires, the scattering by the hydrogen vacancies is strongly energy dependent and for relatively long SiNWs (L>200 nm) the resistance changes from the Ohmic to the localization regime within a 0.1 eV shift of the Fermi energy. This high sensitivity might be used for sensor applications. △ Less

Submitted 23 June, 2006; originally announced June 2006.

Comments: 9 pages, 7 figures, submitted to Phys. Rev. B