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Comparison of stable spin textures in in-plane vs. out-of-plane magnetized exchange-biased multilayers
Authors:
Bernard Dieny,
Olivier Fruchart,
Ernesto E. Marinero
Abstract:
This paper delves into the origins and specificity of the unique stable spin textures (360° closed loop domain walls and skyrmions) observed in exchange-biased systems, with either in-plane or out-of-plane magnetic anisotropy. In the case of skyrmions, which are nanometer-sized bubbles consisting of closed-loop 180° walls in perpendicularly-magnetized media, the stability of these spin textures ar…
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This paper delves into the origins and specificity of the unique stable spin textures (360° closed loop domain walls and skyrmions) observed in exchange-biased systems, with either in-plane or out-of-plane magnetic anisotropy. In the case of skyrmions, which are nanometer-sized bubbles consisting of closed-loop 180° walls in perpendicularly-magnetized media, the stability of these spin textures arises from the existence of Dzyaloshinskii-Moriya Interactions (DMI). These interactions induce chirality of the domain walls, yielding to some extent a so-called topological protection. More complex structures such as skyrmoniums have been observed, consisting of closed loop 360° walls. Recently, skyrmions formed in the absence of an applied external magnetic field have been stabilized in exchange biased out-of-plane magnetized systems. About two decades ago, another type of stable spin-textures were observed in exchange biased systems, with in-plane magnetization, in particular in the pinned reference layer of spin-valves. These textures consist of 360°-domain-wall rings, the stability of which arises from the easy-plane shape anisotropy of these layers. In this paper, we compare these spin-textures and highlight the similarities and differences in their formation, structure and origin of their stability.
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Submitted 12 February, 2024;
originally announced February 2024.
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Atomistic mechanisms underlying the maximum in diffusivity in doped Li$_7$La$_3$Zr$_2$O$_{12}$
Authors:
Juan C. Verduzco,
Ernesto E. Marinero,
Alejandro Strachan
Abstract:
Doped lithium lanthanum zirconium oxide (LLZO) is a promising class of solid electrolytes for lithium-ion batteries due to their good electrochemical stability and compatibility with Li metal anodes. Ionic diffusivity in these ceramics is known to occur via correlated, vacancy mediated, jumps of Li+ between alternating tetrahedral and octahedral sites. Aliovalent do** at the Zr-site increases th…
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Doped lithium lanthanum zirconium oxide (LLZO) is a promising class of solid electrolytes for lithium-ion batteries due to their good electrochemical stability and compatibility with Li metal anodes. Ionic diffusivity in these ceramics is known to occur via correlated, vacancy mediated, jumps of Li+ between alternating tetrahedral and octahedral sites. Aliovalent do** at the Zr-site increases the concentration of vacancies in the Li+ sublattice and cation diffusivity, but such an increase is universally followed by a decrease for Li+ concentration lower than 6.3 - 6.5 Li molar content. Molecular dynamics simulations based on density functional theory show that the maximum in diffusivity originates from competing effects between the increased vacancy concentration and the increasing occupancy of the low-energy tetrahedral sites by Li+, which increases the overall activation energy associated with diffusion. For the relatively high temperatures of our simulations, Li+ concentration plays a dominant role in transport as compared to dopant chemistry.
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Submitted 15 May, 2023;
originally announced May 2023.
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Ionic conductivity optimization of composite polymer electrolytes through filler particle chemical modification
Authors:
Andres Villa,
Juan Carlos Verduzco,
Joseph A. Libera,
Ernesto E. Marinero
Abstract:
The addition of filler particles to polymer electrolytes is known to increment their ionic conductivity (IC). A detailed understanding of how the interactions between the constituent materials are responsible for the enhancement, remains to be developed. A significant contribution is ascribed to an increment of the polymer amorphous fraction, induced by the fillers, resulting in the formation of h…
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The addition of filler particles to polymer electrolytes is known to increment their ionic conductivity (IC). A detailed understanding of how the interactions between the constituent materials are responsible for the enhancement, remains to be developed. A significant contribution is ascribed to an increment of the polymer amorphous fraction, induced by the fillers, resulting in the formation of higher ionic conductivity channels in the polymer matrix. However, the dependence of IC on the particle weight load and its composition on the polymer morphology is not fully understood. This work investigates Li ion transport in composite polymer electrolytes (CPE) comprising Bi-doped LLZO particles embedded in PEO: LiTFSI matrixes. We find that the IC optimizes for very low particle weight loads (5 to 10%) and that both its magnitude and the load required, strongly depend on the garnet particle composition. Based on structural characterization results and electrochemical impedance spectroscopy, a mechanism is proposed to explain these findings. It is suggested that the Li-molar content in the garnet particle controls its interactions with the polymer matrix, resulting at the optimum loads reported, in the formation of high ionic conductivity channels. We propose that filler particle chemical manipulation of the polymer morphology is a promising avenue for the further development of composite polymer electrolytes.
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Submitted 17 March, 2021;
originally announced March 2021.
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Hybrid Polymer-Garnet Materials for All-Solid-State Energy Storage Devices
Authors:
Juan C. Verduzco,
John N. Vergados,
Alejandro Strachan,
Ernesto E. Marinero
Abstract:
Hybrid electrolyte materials comprising polymer-ionic salt matrixes embedded with garnet particles constitute a promising class of materials for the realization of all-solid-state batteries. In addition to providing solutions to the safety issues inherent to current liquid electrolytes, hybrid polymer electrolytes offer advantages over other solid-state electrolytes. This is because their function…
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Hybrid electrolyte materials comprising polymer-ionic salt matrixes embedded with garnet particles constitute a promising class of materials for the realization of all-solid-state batteries. In addition to providing solutions to the safety issues inherent to current liquid electrolytes, hybrid polymer electrolytes offer advantages over other solid-state electrolytes. This is because their functional properties such as ionic conductivity, electrochemical stability, mechanical and thermal properties can be tailored to a particular application by independently optimizing the properties of the constituent materials. Thereby, providing a rational approach to solving bottlenecks currently preventing solid-state electrolytes from practical implementation into battery devices. This review starts with a survey of solid-state electrolytes, focusing on their materials and ion transport limitations. Next, we summarize the current understanding of transport mechanisms in composite polymer electrolytes (CPEs) with the purpose of identifying materials solutions for further improving their properties. The overall goal of the review is to foster heightened research interest in these hybrid structures to rapidly advance development of future all-solid-state battery devices.
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Submitted 30 April, 2021; v1 submitted 26 August, 2020;
originally announced August 2020.
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Hybrid Magneto Photonic Material Structure for Plasmon Assisted Magnetic Switching
Authors:
Alan Hwader Chu,
Bradlee Beauchamp,
Deesha Shah,
Aveek Dutta,
Alexandra Boltasseva,
Vladimir M. Shalaev,
Ernesto E. Marinero
Abstract:
We have proposed the use of surface plasmon resonances at the interface of hybrid magneto-photonic heterostructures [Opt. Mat. Exp., 7, 4316 (2017)] for all-optical control of the macroscopic spin orientation in nanostructures in fs time scales. This requires strong spin-photon coupling for the resonant enhancement of opto-magnetic fields, generated through the inverse Faraday effect, in magnetic…
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We have proposed the use of surface plasmon resonances at the interface of hybrid magneto-photonic heterostructures [Opt. Mat. Exp., 7, 4316 (2017)] for all-optical control of the macroscopic spin orientation in nanostructures in fs time scales. This requires strong spin-photon coupling for the resonant enhancement of opto-magnetic fields, generated through the inverse Faraday effect, in magnetic nanostructures with perpendicular anisotropy. Here we report on the development of nm thick interlayers to control the growth orientation of hcp-Co alloys grown on refractory plasmonic materials to align the magnetic axis out-of-plane, thereby meeting key requirements for the realization of ultrafast magneto-photonic devices.
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Submitted 11 September, 2020; v1 submitted 16 June, 2020;
originally announced June 2020.
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Temperature-dependent Magnetic Transitions in CoCrPt-Ru-CoCrPt Synthetic Ferrimagnets
Authors:
B. Beauchamp,
E. E. Marinero
Abstract:
The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic transitions occur in the CoCrPt-Ru-CoCrPt ferrimagnet across this temperature range. The first set exhibits three magnetic transitions in the 50 K - 370 K range, whereas…
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The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic transitions occur in the CoCrPt-Ru-CoCrPt ferrimagnet across this temperature range. The first set exhibits three magnetic transitions in the 50 K - 370 K range, whereas the second involves only two transitions in the 2 K and 50 K range. The observed magnetic hysteresis curves of the synthetic ferrimagnet are explained using the energy diagram technique framework pioneered by Koplak et al. [1] which accurately describes the competition between interlayer exchange coupling energy, Zeeman energy, and anisotropy energy in the system. In this work we expand the framework to include synthetic ferrimagnets (SFMs) comprising higher perpendicular magnetic anisotropy materials and large (4X) interlayer exchange coupling energies which are promising for the development of ultrafast (ps) magnetic switching free layers in MTJ structures. Furthermore, we apply the analysis to predict SFM magnetic hysteresis curves in a temperature regime that includes temperature extrema that a synthetic ferrimagnet would be expected to reliably operate at, were it to be utilized as a free layer in a memory or sensor spintronic device.
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Submitted 14 December, 2020; v1 submitted 23 April, 2020;
originally announced April 2020.
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Superconductivity behavior in epitaxial TiN films points at surface magnetic disorder
Authors:
N. A. Saveskul,
N. A. Titova,
E. M. Baeva,
A. V. Semenov,
A. V. Lubenchenko,
S. Saha,
H. Reddy,
S. I Bogdanov,
E. E. Marinero,
V. M. Shalaev,
A. Boltasseva,
V. S. Khrapai,
A. I. Kardakova,
G. N. Goltsman
Abstract:
We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-d…
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We analyze the evolution of the normal and superconducting electronic properties in epitaxial TiN films, characterized by high Ioffe-Regel parameter values, as a function of the film thickness. As the film thickness decreases, we observe an increase of in the residual resistivity, which becomes dominated by diffusive surface scattering for $d\leq20\,$nm. At the same time, a substantial thickness-dependent reduction of the superconducting critical temperature is observed compared to the bulk TiN value. In such a high quality material films, this effect can be explained by a weak magnetic disorder residing in the surface layer with a characteristic magnetic defect density of $\sim10^{12}\,\mathrm{cm}^{-2}$. Our results suggest that surface magnetic disorder is generally present in oxidized TiN films.
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Submitted 5 November, 2019; v1 submitted 12 March, 2019;
originally announced March 2019.
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Ionic conductivity enhacements and low temperature synthesis of Li7La3Zr2O12 garnets by Bi aliovalent substitutions
Authors:
Derek K. Schwanz,
Andres Villa,
Mahalingam Balasubramanian,
Benjamin Helfrecht,
Ernesto E. Marinero
Abstract:
We report on a novel approach to synthesize cubic-phase fast ionic conducting garnet-type solid state electrolytes based on Bi doped Li7La3Zr2O12 (LLZO). Bi aliovalent substitution into LLZO utilizing the Pechini processing method is successfully employed to synthesize Li7-xLa3Zr2-xBixO12 compounds. Ionic conductivities up to 2.0 x 10-4 S/cm are achieved in structures not fully densified. Cubic ph…
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We report on a novel approach to synthesize cubic-phase fast ionic conducting garnet-type solid state electrolytes based on Bi doped Li7La3Zr2O12 (LLZO). Bi aliovalent substitution into LLZO utilizing the Pechini processing method is successfully employed to synthesize Li7-xLa3Zr2-xBixO12 compounds. Ionic conductivities up to 2.0 x 10-4 S/cm are achieved in structures not fully densified. Cubic phase Li6La3ZrBiO12 powders are generated in the temperature range from 650 °C to 900 °C in air. In contrast, in the absence of Bi and under identical synthesis conditions, the cubic garnet phase of Li7La3Zr2O12 is not formed below 700 °C while a transformation to the tetragonal phase is observed at 900 °C for the un-doped compound. The critical role of Bi in lowering the formation temperature of the garnet cubic phase and the improvements in ionic conductivity is investigated in this work through microstructural studies and AC impedance measurements. We ascribe the effect of Bi do** in achieving these remarkable improvements to significant enhancements at lower temperatures in the kinetics of the solid-state reaction resulting in explosive grain growth and densification of the garnet. Moreover, XAS is utilized to identify the specific atomic site where Bi is incorporated in the LLZO garnet crystalline structure.
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Submitted 18 February, 2019;
originally announced February 2019.
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Surface-plasmon opto-magnetic field enhancement for all-optical magnetization switching
Authors:
Aveek Dutta,
Alexander V. Kildishev,
Vladimir M. Shalaev,
Alexandra Boltasseva,
Ernesto E. Marinero
Abstract:
The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of the storage layer is switched by spin-transfer-torque or spin-orbit torque interactions. Whereas these novel spin-torque interactions exemplify the potential o…
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The demand for faster magnetization switching speeds and lower energy consumption has driven the field of spintronics in recent years. The magnetic tunnel junction is the most developed spintronic memory device in which the magnetization of the storage layer is switched by spin-transfer-torque or spin-orbit torque interactions. Whereas these novel spin-torque interactions exemplify the potential of electron-spin-based devices and memory, the switching speed is limited to the ns regime by the precessional motion of the magnetization. All-optical magnetization switching, based on the inverse Faraday effect, has been shown to be an attractive method for achieving magnetization switching at ps speeds. Successful magnetization reversal in thin films has been demonstrated by using circularly polarized light. However, a method for all-optical switching of on-chip nanomagnets in high density memory modules has not been described. In this work we propose to use plasmonics, with CMOS compatible plasmonic materials, to achieve on-chip magnetization reversal in nanomagnets. Plasmonics allows light to be confined in dimensions much smaller than the diffraction limit of light. This in turn, yields higher localized electromagnetic field intensities. In this work, through simulations, we show that using localized surface plasmon resonances, it is possible to couple light to nanomagnets and achieve significantly higher opto-magnetic field values in comparison to free space light excitation.
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Submitted 3 May, 2017;
originally announced May 2017.
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Ultrafast Spin-Transfer-Torque Switching of Synthetic Ferrimagnets
Authors:
Kerem Yunus Camsari,
Ahmed Zeeshan Pervaiz,
Rafatul Faria,
Ernesto E. Marinero,
Supriyo Datta
Abstract:
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required…
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The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is further exacerbated as the dimensions of MTJ nanostructures are scaled down to tens of nanometers in diameter, as higher magnetic anisotropy materials are required to meet thermal stability requirements that demand higher switching current densities. Here, we propose a simple solution to these issues based on synthetic ferrimagnet (SFM) structures. It is commonly assumed that to achieve a given switching delay, the current has to exceed the critical current by a certain factor and so a higher critical current implies a higher switching current. We show that this is not the case for SFM structures which can provide significantly reduced switching delay for a given current density, even though the critical current is increased. This non-intuitive result can be understood from the requirements of angular momentum conservation. We conclude that a 20 nm diameter MTJ incorporating the proposed SFM free layer structure can be switched in tens of picosecond time scales. This remarkable switching speed can be attained by employing current perpendicular magnetic anisotropy materials with experimentally demonstrated exchange coupling strengths.
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Submitted 14 June, 2016; v1 submitted 14 June, 2016;
originally announced June 2016.
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Tuning Fano-type resonances in coupled quantum point contacts by applying asymmetric voltages
Authors:
Rubén C. Villarreal,
Francisco Mireles,
Ernesto E. Marinero,
Bruce A. Gurney
Abstract:
We study the ballistic magnetotransport in a double quantum point contact (QPC) device consisting of a quasi-one-dimensional quantum wire with an embedded island-like impurity - etched nano-hole as in a recently published experiment [J. C. Chen, Y. Lin, K.-T. Lin, T. Ueda and S. Komiyama, Appl. Phys. Lett. 94, 012105 (2009)]. We reproduce the zero field quantized conductance, the interference phen…
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We study the ballistic magnetotransport in a double quantum point contact (QPC) device consisting of a quasi-one-dimensional quantum wire with an embedded island-like impurity - etched nano-hole as in a recently published experiment [J. C. Chen, Y. Lin, K.-T. Lin, T. Ueda and S. Komiyama, Appl. Phys. Lett. 94, 012105 (2009)]. We reproduce the zero field quantized conductance, the interference phenomenon induced by the coupled QPCs, as well as the Ramsauer-like resonances observed in the experiments. At finite magnetic fields Fano-type resonances arises in the conductance due to the formation of localized states at the impurity periphery and to an inter-edge state resonant coupling effect. It is predicted that the Fano-type resonances can be controlled by an asymmetric confinement of the QPCs.
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Submitted 3 May, 2011;
originally announced May 2011.
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Zero field spin splitting in AlSb/InAs/AlSb quantum wells induced by surface proximity effects
Authors:
Masaya Nishioka,
Bruce A. Gurney,
Ernesto E. Marinero,
Francisco Mireles
Abstract:
InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on magnetotransport measurements of AlSb/InAs/AlSb Hall bars at a shallow depth of 20 nm. Analysis of the observed Shubnikov-de Haas oscillations and modeling show that spin s…
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InAs quantum well heterostructures are of considerable interest for mesoscopic device applications such as scanning probe and magnetic recording sensors, which require the channel to be close to the surface. Here we report on magnetotransport measurements of AlSb/InAs/AlSb Hall bars at a shallow depth of 20 nm. Analysis of the observed Shubnikov-de Haas oscillations and modeling show that spin splitting energies in excess of 2.3 meV occur at zero magnetic field. We conclude that the spin-splitting results from the Rashba effect due to the band bending in the quantum well. This is caused by substantial electron transfer from the surface to the quantum well and becomes significant when the quantum well is located near the surface.
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Submitted 10 December, 2009;
originally announced December 2009.
