-
Manifestation of interface anisotropy in CdTe quantum wells
Authors:
L. V. Kotova,
A. V. Platonov,
R. André,
H. Mariette,
V. P. Kochereshko
Abstract:
Photoluminescence and polarized reflection spectra of quantum well structures with symmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.9}$Zn$_{0.1}$Te and asymmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.4}$Mg$_{0.6}$Te barriers were studied. The Stokes parameters of the reflected light from these structures were measured. In the structures with symmetric barriers, exciton resonances were found in the refle…
▽ More
Photoluminescence and polarized reflection spectra of quantum well structures with symmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.9}$Zn$_{0.1}$Te and asymmetric Cd$_{0.9}$Zn$_{0.1}$Te/CdTe/Cd$_{0.4}$Mg$_{0.6}$Te barriers were studied. The Stokes parameters of the reflected light from these structures were measured. In the structures with symmetric barriers, exciton resonances were found in the reflection spectra and were not present in the photoluminescence spectra. In structures with asymmetric barriers, in the region of exciton resonances, the phenomenon of light birefringence was detected, caused by a lower symmetry of the interfaces compared to the symmetry of bulk crystals. A discussion of both phenomena was given.
△ Less
Submitted 25 July, 2022;
originally announced July 2022.
-
Optical Determination of the Band Gap and Band Tail of Epitaxial Ag$_2$ZnSnSe$_4$ at Low Temperature
Authors:
S. Perret,
Y. Curé,
L. Grenet,
R. André,
H. Mariette,
J. Bleuse
Abstract:
We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account qua…
▽ More
We report on the precise determination of both the band gap E$_\text{g}$, and the characteristic energy $U$ of the band tail of localized defect states, for monocrystalline Ag$_2$ZnSnSe$_4$. Both photoluminescence excitation and time-resolved photoluminescence studies lead to E$_\text{g} = 1223\pm3$ meV, and $U = 20\pm3$ meV, at 6 K. The interest of the methodology developed here is to account quantitatively for the time-resolved photoluminescence and photoluminescence excitation spectra by only considering standard textbook density of states, and state filling effects. Such an approach is different from the one most often used to evaluate the energy extent of the localized states, namely by measuring the energy shift between the photoluminescence emission and the excitation one -- the so-called Stokes shift. The advantage of the present method is that no arbitrary choice of the low power excitation has to be done to select the photoluminescence emission spectrum and its peak energy.
△ Less
Submitted 7 July, 2020;
originally announced July 2020.
-
Determination of the optimal shell thickness for self-catalysed GaAs/AlGaAs core-shell nanowires
Authors:
R. Songmuang,
Le Thuy Thanh Giang,
J. Bleuse M. Den Hertog,
Le Si Dang,
H. Mariette
Abstract:
We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface charge traps, and structural defects. Time-resolved photoluminescence of NW ensemble and spatially-resolved cathodoluminescence of single NWs reveal that emission i…
▽ More
We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface charge traps, and structural defects. Time-resolved photoluminescence of NW ensemble and spatially-resolved cathodoluminescence of single NWs reveal that emission intensity, decay time and carrier diffusion length of the GaAs NW cores strongly depend on AlGaAs shell thickness but in a non-monotonic fashion. Although 7 nm-AlGaAs shell can efficiently suppress the surface recombination velocity of the GaAs NW cores, the effect of the band bending caused by the surface charges remains dominant if the shell thickness is less than 50 nm; that is, the carrier diffusion length is smaller in the NWs with a thinner shell caused by a stronger carrier scattering at the core/shell interface. If the AlGaAs shell thickness is larger than 50 nm, the luminescence efficiency of the GaAs NW cores starts to be deteriorated, ascribed to the defect formation inside the AlGaAs shell evidenced by transmission electron microscopy.
△ Less
Submitted 17 November, 2015;
originally announced November 2015.
-
Phase diagrams of magnetopolariton gases
Authors:
V. P. Kochereshko,
M. V. Durnev,
L. Besombes,
H. Mariette,
V. F. Sapega,
A. Axitopoulos,
I. G. Savenko,
T. C. H. Liew,
I. A. Shelykh,
A. V. Platonov,
S. I. Tsintzos,
Z. Hatzopoulos,
P. Lagoudakis,
P. G. Savvidis,
C. Schneider,
M. Amthor,
C. Metzger,
M. Kamp,
S. Hoefling,
A. Kavokin
Abstract:
The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focu…
▽ More
The magnetic field effect on phase transitions in electrically neutral bosonic systems is much less studied than those in fermionic systems, such as superconducting or ferromagnetic phase transitions. Nevertheless, composite bosons are strongly sensitive to magnetic fields: both their internal structure and motion as whole particles may be affected. A joint effort of ten laboratories has been focused on studies of polariton lasers, where non-equilibrium Bose-Einstein condensates of bosonic quasiparticles, exciton-polaritons, may appear or disappear under an effect of applied magnetic fields. Polariton lasers based on pillar or planar microcavities were excited both optically and electrically. In all cases a pronounced dependence of the onset to lasing on the magnetic field has been observed. For the sake of comparison, photon lasing (lasing by an electron-hole plasma) in the presence of a magnetic field has been studied on the same samples as polariton lasing. The threshold to photon lasing is essentially governed by the excitonic Mott transition which appears to be sensitive to magnetic fields too. All the observed experimental features are qualitatively described within a uniform model based on coupled diffusion equations for electrons, holes and excitons and the Gross-Pitaevskii equation for exciton-polariton condensates. Our research sheds more light on the physics of non-equilibrium Bose-Einstein condensates and the results manifest high potentiality of polariton lasers for spin-based quantum logic applications.
△ Less
Submitted 26 September, 2013;
originally announced September 2013.
-
Magnetic field induced nutation of the exciton-polariton polarization in (Cd,Zn)Te crystals
Authors:
Tillmann Godde,
Mikhail Glazov,
Ilya Akimov,
Dmitri Yakovlev,
Henri Mariette,
Manfred Bayer
Abstract:
We study the polarization dynamics of exciton-polaritons propagating in sub-mm thick (Cd,Zn)Te bulk crystals using polarimetric time-of-flight techniques. The application of a magnetic field in Faraday geometry leads to synchronous temporal oscillations of all Stokes parameters of an initially linearly or circularly polarized, spectrally broad optical pulse of 150 fs duration propagating through t…
▽ More
We study the polarization dynamics of exciton-polaritons propagating in sub-mm thick (Cd,Zn)Te bulk crystals using polarimetric time-of-flight techniques. The application of a magnetic field in Faraday geometry leads to synchronous temporal oscillations of all Stokes parameters of an initially linearly or circularly polarized, spectrally broad optical pulse of 150 fs duration propagating through the crystal. Strong dispersion for photon energies close to the exciton resonance leads to stretching of the optical pulse to a duration of 200$-$300 ps and enhancement of magneto-optical effects such as the Faraday rotation and the non-reciprocal birefringence. The oscillation frequency of the exciton-polariton polarization increases with magnetic field $B$, reaching 10 GHz at $B\sim 5$T. Surprisingly, the relative contributions of Faraday rotation and non-reciprocal birefringence undergo strong changes with photon energy, which is attributed to a non-trivial spectral dependence of Faraday rotation in the vicinity of the exciton resonance. This leads to polarization nutation of the transmitted optical pulse in the time domain. The results are well explained by a model that accounts for Faraday rotation and magneto-spatial dispersion in zinc-blende crystals. We evaluate the exciton $g$-factor $|g_{\rm exc}|=0.2$ and the magneto-spatial constant $V= 5 \times 10^{-12}$ eVcm$\textup{T}^{-1}$.
△ Less
Submitted 14 May, 2013;
originally announced May 2013.
-
Determination of the valence band offset at cubic CdSe/ZnTe type II heterojunctions: A combined experimental and theoretical approach
Authors:
Daniel Mourad,
Jan-Peter Richters,
Lionel Gérard,
Régis André,
Joël Bleuse,
Henri Mariette
Abstract:
We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photo…
▽ More
We present a combined experimental and theoretical approach for the determination of the low-temperature valence band offset (VBO) at CdSe/ZnTe heterojunctions with underlying zincblende crystal structure. On the experimental side, the optical transition of the type II interface allows for a precise measurement of the type II band gap. We show how the excitation-power dependent shift of this photoluminescence (PL) signal can be used for any type II system for a precise determination of the VBO. On the theoretical side, we use a refined empirical tight-binding parametrization in order to accurately reproduce the band structure and density of states around the band gap region of cubic CdSe and ZnTe and then calculate the branch point energy (also known as charge neutrality level) for both materials. Because of the cubic crystal structure and the small lattice mismatch across the interface, the VBO for the material system under consideration can then be obtained from a charge neutrality condition, in good agreement with the PL measurements.
△ Less
Submitted 30 October, 2012; v1 submitted 10 August, 2012;
originally announced August 2012.
-
Intrinsic limits governing MBE growth of Ga-assisted GaAs nanowires on Si(111)
Authors:
Le Thuy Thanh Giang,
C. Bougerol,
H. Mariette,
R. Songmuang
Abstract:
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The maximum axial growth rate; which can be quantified by the supplied rate of As atoms, is achieved when a dynamical equilibrium state is maintained in Ga droplets…
▽ More
Diffusion-enhanced and desorption-limited growth regimes of Ga-assisted GaAs nanowires were identified. In the latter regime, the number of vertical NWs with a narrow length distribution was increased by raising the growth temperature. The maximum axial growth rate; which can be quantified by the supplied rate of As atoms, is achieved when a dynamical equilibrium state is maintained in Ga droplets i.e. the number of im**ing As atoms on the droplet surface is equivalent to that of direct deposited Ga atoms combining with the diffusing ones. The contribution of Ga diffusion to the wire growth was evidenced by the diameter-dependent NW axial growth rate.
△ Less
Submitted 19 June, 2012;
originally announced June 2012.
-
Temperature insensitive optical alignment of the exciton in nanowire embedded GaN Quantum Dots
Authors:
A. Balocchi,
J. Renard,
C. T. Nguyen,
B. Gayral,
T. Amand,
H. Mariette,
B. Daudin,
G. Tourbot,
X. Marie
Abstract:
We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton…
▽ More
We report on the exciton spin dynamics of nanowire embedded GaN/AlN Quantum Dots (QDs) investigated by time-resolved photoluminescence spectroscopy. Under a linearly polarized quasiresonant excitation we evidence the quenching of the exciton spin relaxation and a temperature insensitive degree of the exciton linear polarization, demonstrating the robustness of the optical alignment of the exciton spin in these nanowire embedded QDs. A detailed examination of the luminescence polarization angular dependence shows orthogonal linear exciton eigenstates with no preferential crystallographic orientation.
△ Less
Submitted 28 July, 2011;
originally announced July 2011.
-
Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe
Authors:
A. S. Gurevich,
V. P. Kochereshko,
J. Bleuse,
H. Mariette,
A. Waag,
R. Akimoto
Abstract:
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confir…
▽ More
Existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is evidenced experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective band gap of the structure; they are characterized by a high density and high carrier capture rate. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.
△ Less
Submitted 27 April, 2011;
originally announced April 2011.
-
Optical Study of GaAs quantum dots embedded into AlGaAs nanowires
Authors:
V. N. Kats,
V. P. Kochereshko,
A. V. Platonov,
T. V. Chizhova,
G. E. Cirlin,
A. D. Bouravleuv,
Yu. B. Samsonenko,
I. P. Soshnikov,
E. V. Ubyivovk,
J. Bleuse,
H. Mariette
Abstract:
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the Al…
▽ More
We report on the photoluminescence characterization of GaAs quantum dots embedded into AlGaAs nano-wires. Time integrated and time resolved photoluminescence measurements from both an array and a single quantum dot/nano-wire are reported. The influence of the diameter sizes distribution is evidenced in the optical spectroscopy data together with the presence of various crystalline phases in the AlGaAs nanowires.
△ Less
Submitted 17 April, 2011;
originally announced April 2011.
-
Sub-nanosecond delay of light in (Cd,Zn)Te crystal
Authors:
T. Godde,
I. A. Akimov,
D. R. Yakovlev,
H. Mariette,
M. Bayer
Abstract:
We study excitonic polariton relaxation and propagation in bulk CdZnTe using time- resolved photoluminescence and time-of-flight techniques. Propagation of picosecond optical pulses through 0.745 mm thick crystal results in time delays up to 350 ps, depending on the photon energy. Optical pulses with 150 fs duration become strongly stretched. The spectral dependence of group velocity is consistent…
▽ More
We study excitonic polariton relaxation and propagation in bulk CdZnTe using time- resolved photoluminescence and time-of-flight techniques. Propagation of picosecond optical pulses through 0.745 mm thick crystal results in time delays up to 350 ps, depending on the photon energy. Optical pulses with 150 fs duration become strongly stretched. The spectral dependence of group velocity is consistent with the dispersion of the lower excitonic polariton branch. The lifetimes of excitonic polariton in the upper and lower branches are 1.5 and 3 ns, respectively.
△ Less
Submitted 9 July, 2010;
originally announced July 2010.
-
Optical initialization, readout and dynamics of a Mn spin in a quantum dot
Authors:
C. Le Gall,
R. S. Kolodka,
C. Cao,
H. Boukari,
H. Mariette,
J. Fernández-Rossier,
L. Besombes
Abstract:
We have investigated the spin preparation efficiency by optical pum** of individual Mn atoms embedded in CdTe/ZnTe quantum dots. Monitoring the time dependence of the intensity of the fluorescence during the resonant optical pum** process in individual quantum dots allows to directly probe the dynamics of the initialization of the Mn spin. This technique presents the convenience of including…
▽ More
We have investigated the spin preparation efficiency by optical pum** of individual Mn atoms embedded in CdTe/ZnTe quantum dots. Monitoring the time dependence of the intensity of the fluorescence during the resonant optical pum** process in individual quantum dots allows to directly probe the dynamics of the initialization of the Mn spin. This technique presents the convenience of including preparation and read-out of the Mn spin in the same step. Our measurements demonstrate that Mn spin initialization, at zero magnetic field, can reach an efficiency of 75% and occurs in the tens of \emph{ns} range when a laser resonantly drives at saturation one of the quantum dot transition. We observe that the efficiency of optical pum** changes from dot to dot and is affected by a magnetic field of a few tens of mT applied in Voigt or Faraday configuration. This is attributed to the local strain distribution at the Mn location which predominantly determines the dynamics of the Mn spin under weak magnetic field. The spectral distribution of the spin-flip scattered photons from quantum dots presenting a weak optical pum** efficiency reveals a significant spin relaxation for the exciton split in the exchange field of the Mn spin.
△ Less
Submitted 9 March, 2010; v1 submitted 1 March, 2010;
originally announced March 2010.
-
Optical spin orientation of a single manganese atom in a quantum dot
Authors:
C. Le Gall,
L. Besombes,
H. Boukari,
R. Kolodka,
H. Mariette,
J. Cibert
Abstract:
A hight degree of spin polarization is achieved for a Mn atom localized in a semiconductor quantum dot using quasi-resonant optical excitation at zero magnetic field. Optically created spin polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optica…
▽ More
A hight degree of spin polarization is achieved for a Mn atom localized in a semiconductor quantum dot using quasi-resonant optical excitation at zero magnetic field. Optically created spin polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pum** mechanism shows that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy induced by the built-in strain in the quantum dots.
△ Less
Submitted 13 November, 2008;
originally announced November 2008.
-
Optical probing of spin fluctuations of a single magnetic atom
Authors:
L. Besombes,
Y. Leger,
J. Bernos,
H. Boukari,
H. Mariette,
J. Fernandez-Rossier,
R. Aguado
Abstract:
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in an individual semiconductor quantum dot. The statistics of the photons emitted by the quantum dot reflect the quantum fluctuations of the localized spin interacting with the injected carriers. Photon correlation measurements which are reported here reveal unique signatures of these fluctuations.…
▽ More
We analyzed the photoluminescence intermittency generated by a single paramagnetic spin localized in an individual semiconductor quantum dot. The statistics of the photons emitted by the quantum dot reflect the quantum fluctuations of the localized spin interacting with the injected carriers. Photon correlation measurements which are reported here reveal unique signatures of these fluctuations. A phenomenological model is proposed to quantitatively describe these observations, allowing a measurement of the spin dynamics of an individual magnetic atom at zero magnetic field. These results demonstrate the existence of an efficient spin relaxation channel arising from a spin-exchange with individual carriers surrounding the quantum dot. A theoretical description of a spin-flip mechanism involving spin exchange with surrounding carriers gives relaxation times in good agreement with the measured dynamics.
△ Less
Submitted 31 July, 2008;
originally announced July 2008.
-
Room temperature Optical Orientation of Exciton Spin in cubic GaN/AlN quantum dots
Authors:
D. Lagarde,
A. Balocchi,
H. Carrere,
P. Renucci,
T. Amand,
X. Marie,
S. Founta,
H. Mariette
Abstract:
The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with c…
▽ More
The optical orientation of the exciton spin in an ensemble of self-organized cubic GaN/AlN quantum dots is studied by time-resolved photoluminescence. Under a polarized quasi-resonant excitation, the luminescence linear polarization exhibits no temporal decay, even at room temperature. This demonstrates the robustness of the exciton spin polarization in these cubic nitride nanostructures, with characteristic decay times longer than 10 ns.
△ Less
Submitted 28 November, 2007;
originally announced November 2007.
-
Excitonic giant Zeeman effect in GaN:Mn^3+
Authors:
W. Pacuski,
D. Ferrand,
J. Cibert,
J. A. Gaj,
A. Golnik,
P. Kossacki,
S. Marcet,
E. Sarigiannidou,
H. Mariette
Abstract:
We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free…
▽ More
We describe a direct observation of the excitonic giant Zeeman splitting in (Ga,Mn)N, a wide-gap III-V diluted magnetic semiconductor. Reflectivity and absorption spectra measured at low temperatures display the A and B excitons, with a shift under magnetic field due to s,p-d exchange interactions. Using an excitonic model, we determine the difference of exchange integrals between Mn^3+ and free carriers in GaN, N_0(alpha-beta)=-1.2 +/- 0.2 eV. Assuming a reasonable value of alpha, this implies a positive sign of beta which corresponds to a rarely observed ferromagnetic interaction between the magnetic ions and the holes.
△ Less
Submitted 2 March, 2007; v1 submitted 2 March, 2007;
originally announced March 2007.
-
Remote optical addressing of single nano-objects
Authors:
M. Brun,
A. Drezet,
H. Mariette,
J. C. Woehl,
S. Huant
Abstract:
We present a scheme for remotely addressing single nano-objects by means of near-field optical microscopy that makes only use of one of the most fundamental properties of electromagnetic radiation: its polarization. A medium containing optically active nano-objects is covered with a thin metallic film presenting sub-wavelength holes. When the optical tip is positioned some distance away from a h…
▽ More
We present a scheme for remotely addressing single nano-objects by means of near-field optical microscopy that makes only use of one of the most fundamental properties of electromagnetic radiation: its polarization. A medium containing optically active nano-objects is covered with a thin metallic film presenting sub-wavelength holes. When the optical tip is positioned some distance away from a hole, surface plasmons in the metal coating are generated which, by turning the polarization plane of the excitation light, transfer the excitation towards a chosen hole and induce emission from the underlying nano-objects. The method, easily applicable to other systems, is demonstrated for single quantum dots (QDs) at low temperature. It may become a valuable tool for future optical applications in the nanoworld.
△ Less
Submitted 22 December, 2006;
originally announced December 2006.
-
Fine structure of exciton excited levels in a quantum dot with a magnetic ion
Authors:
M. M. Glazov,
E. L. Ivchenko,
L. Besombes,
Y. Leger,
L. Maingault,
H. Mariette
Abstract:
The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the anisotropic long-range electron-hole exchange interaction in the zero-dimensional exciton, and the exchange interaction of the electron and the hole with the $d$-ele…
▽ More
The fine structure of excited excitonic states in a quantum dot with an embedded magnetic ion is studied theoretically and experimentally. The developed theory takes into account the Coulomb interaction between charged carriers, the anisotropic long-range electron-hole exchange interaction in the zero-dimensional exciton, and the exchange interaction of the electron and the hole with the $d$-electrons of a Mn ion inserted inside the dot. Depending on the relation between the quantum dot anisotropy and the exciton-Mn coupling the photoluminescence excitation spectrum has a qualitatively different behavior. It provides a deep insight into the spin structure of the excited excitonic states.
△ Less
Submitted 25 November, 2006;
originally announced November 2006.
-
Probing exciton localization in non-polar GaN/AlN Quantum Dots by single dot optical spectroscopy
Authors:
F. Rol,
S. Founta,
H. Mariette,
B. Daudin,
Le Si Dang,
J. Bleuse,
D. Peyrade,
J. -M. Gerard,
B. Gayral
Abstract:
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. Th…
▽ More
We present an optical spectroscopy study of non-polar GaN/AlN quantum dots by time-resolved photoluminescence and by microphotoluminescence. Isolated quantum dots exhibit sharp emission lines, with linewidths in the 0.5-2 meV range due to spectral diffusion. Such linewidths are narrow enough to probe the inelastic coupling of acoustic phonons to confined carriers as a function of temperature. This study indicates that the carriers are laterally localized on a scale that is much smaller than the quantum dot size. This conclusion is further confirmed by the analysis of the decay time of the luminescence.
△ Less
Submitted 24 November, 2006;
originally announced November 2006.
-
Magneto-optical spectroscopy of (Ga,Mn)N epilayers
Authors:
Stéphane Marcet,
David Ferrand,
David Halley,
Shinji Kuroda,
Henri Mariette,
Etienne Gheeraert,
Francisco J. Teran,
Marcin L. Sadowski,
Rose-Marie Galéra,
Joël Cibert
Abstract:
We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Te…
▽ More
We report on the magneto-optical spectroscopy and cathodoluminescence of a set of wurtzite (Ga,Mn)N epilayers with a low Mn content, grown by molecular beam epitaxy. The sharpness of the absorption lines associated to the Mn$^{3+}$ internal transitions allows a precise study of its Zeeman effect in both Faraday and Voigt configurations. We obtain a good agreement if we assume a dynamical Jahn-Teller effect in the 3d$^{4}$ configuration of Mn, and we determine the parameters of the effective Hamiltonians describing the $^{5}T\_{2}$ and $^{5}E$ levels, and those of the spin Hamiltonian in the ground spin multiplet, from which the magnetization of the isolated ion can be calculated. On layers grown on transparent substrates, transmission close to the band gap, and the associated magnetic circular dichroism, reveal the presence of the giant Zeeman effect resulting from exchange interactions between the Mn$^{3+}$ ions and the carriers. The spin-hole interaction is found to be ferromagnetic.
△ Less
Submitted 2 April, 2006;
originally announced April 2006.
-
Geometrical effects on the optical properties of quantum dots doped with a single magnetic atom
Authors:
Y. Leger,
L. Besombes,
L. Maingault,
D. Ferrand,
H. Mariette
Abstract:
The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal…
▽ More
The emission spectra of individual self-assembled quantum dots containing a single magnetic Mn atom differ strongly from dot to dot. The differences are explained by the influence of the system geometry, specifically the in-plane asymmetry of the quantum dot and the position of the Mn atom. Depending on both these parameters, one has different characteristic emission features which either reveal or hide the spin state of the magnetic atom. The observed behavior in both zero field and under magnetic field can be explained quantitatively by the interplay between the exciton-manganese exchange interaction (dependent on the Mn position) and the anisotropic part of the electron-hole exchange interaction (related to the asymmetry of the quantum dot).
△ Less
Submitted 7 July, 2005;
originally announced July 2005.
-
Correlated Photon Emission from a Single II-VI Quantum Dot
Authors:
C. Couteau,
S. Moehl,
F. Tinjod,
J. M. Gérard,
K. Kheng,
H. Mariette,
J. A. Gaj,
R. Romestain,
J. P. Poizat
Abstract:
We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an ultrafast photon correlation set-up allowed us to see an antibunching effect on photons emitted by excitons recombining in a single CdTe/ZnTe QD, as well as…
▽ More
We report correlation and cross-correlation measurements of photons emitted under continuous wave excitation by a single II-VI quantum dot (QD) grown by molecular-beam epitaxy. A standard technique of microphotoluminescence combined with an ultrafast photon correlation set-up allowed us to see an antibunching effect on photons emitted by excitons recombining in a single CdTe/ZnTe QD, as well as cross-correlation within the biexciton ($X_{2}$)-exciton ($X$) radiative cascade from the same dot. Fast microchannel plate photomultipliers and a time-correlated single photon module gave us an overall temporal resolution of 140 ps better than the typical exciton lifetime in II-VI QDs of about 250ps.
△ Less
Submitted 4 October, 2004;
originally announced October 2004.
-
Electronic structure of wurtzite and zinc-blende AlN
Authors:
P. Jonnard,
N. Capron,
F. Semond,
J. Massies,
E. Martinez-Guerrero,
H. Mariette
Abstract:
The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are calculated by using the full potential linearized augmented p…
▽ More
The electronic structure of AlN in wurtzite and zinc-blende phases is studied experimentally and theoretically. By using x-ray emission spectroscopy, the Al 3p, Al 3s and N 2p spectral densities are obtained. The corresponding local and partial theoretical densities of states (DOS), as well as the total DOS and the band structure, are calculated by using the full potential linearized augmented plane wave method, within the framework of the density functional theory. There is a relatively good agreement between the experimental spectra and the theoretical DOS, showing a large hybridization of the valence states all along the valence band. The discrepancies between the experimental and theoretical DOS, appearing towards the high binding energies, are ascribed to an underestimation of the valence band width in the calculations. Differences between the wurtzite and zinc-blende phases are small and reflect the slight variations between the atomic arrangements of both phases.
△ Less
Submitted 10 December, 2003;
originally announced December 2003.
-
Ferromagnetic (Ga,Mn)N epilayers versus antiferromagnetic GaMn$_3$N clusters
Authors:
R. Giraud,
S. Kuroda,
S. Marcet,
E. Bellet-Amalric,
X. Biquard,
B. Barbara,
D. Fruchart,
D. Ferrand,
J. Cibert,
H. Mariette
Abstract:
Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth. Hysteresis loops which persist at high temperature do not appear to be correlated to the presence of Mn. Samples with up to 2% Mn are purely substitutional Ga…
▽ More
Mn-doped wurtzite GaN epilayers have been grown by nitrogen plasma-assisted molecular beam epitaxy. Correlated SIMS, structural and magnetic measurements show that the incorporation of Mn strongly depends on the conditions of the growth. Hysteresis loops which persist at high temperature do not appear to be correlated to the presence of Mn. Samples with up to 2% Mn are purely substitutional Ga$_{1-x}$Mn$_x$N epilayers, and exhibit paramagnetic properties. At higher Mn contents, precipitates are formed which are identified as GaMn$_3$N clusters by x-ray diffraction and absorption: this induces a decrease of the paramagnetic magnetisation. Samples co-doped with enough Mg exhibit a new feature: a ferromagnetic component is observed up to $T_c\sim175$ K, which cannot be related to superparamagnetism of unresolved magnetic precipitates.
△ Less
Submitted 7 March, 2004; v1 submitted 16 July, 2003;
originally announced July 2003.
