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Magnetic States and Electronic Properties of Manganese-Based Intermetallic Compounds Mn$_2$YAl and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni; Z = Al, Ge, Sn, Si, Pt)
Authors:
V. V. Marchenkov,
V. Yu. Irkhin
Abstract:
We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn$_2$YZ and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn$_2$YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the…
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We present a brief review of experimental and theoretical papers on studies of electron transport and magnetic properties in manganese-based compounds Mn$_2$YZ and Mn$_3$Z (Y = V, Cr, Fe, Co, Ni, etc.; Z = Al, Ge, Sn, Si, Pt, etc.). It has been shown that in the electronic subsystem of Mn$_2$YZ compounds, the states of a half-metallic ferromagnet and a spin gapless semiconductor can arise with the realization of various magnetic states, such as a ferromagnet, a compensated ferrimagnet, and a frustrated antiferromagnet. Binary compounds Mn$_3$Z have the properties of a half-metallic ferromagnet and a topological semimetal with a large anomalous Hall effect, spin Hall effect, spin Nernst effect, and thermal Hall effect. Their magnetic states are also very diverse: from a ferrimagnet and an antiferromagnet to a compensated ferrimagnet and a frustrated antiferromagnet, as well as an antiferromagnet with a kagome-type lattice. It has been demonstrated that the electronic and magnetic properties of such materials are very sensitive to external influences (temperature, magnetic field, external pressure), as well as the processing method (cast, rapidly quenched, nanostructured, etc.). Knowledge of the regularities in the behavior of the electronic and magnetic characteristics of Mn$_2$YAl and Mn$_3$Z compounds can be used for applications in micro- and nanoelectronics and spintronics.
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Submitted 25 September, 2023;
originally announced September 2023.
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Magnetotransport in Weyl semimetal WTe2 single crystal
Authors:
A. N. Perevalova,
B. M. Fominykh,
V. V. Chistyakov,
S. V. Naumov,
V. N. Neverov,
V. V. Marchenkov
Abstract:
A WTe2 single crystal was grown by the chemical vapor transport method, and its electrical resistivity and galvanomagnetic properties were investigated. Single-band and two-band models were used to estimate the concentration and mobility of charge carriers in WTe2 at temperatures from 4.2 to 150 K.
A WTe2 single crystal was grown by the chemical vapor transport method, and its electrical resistivity and galvanomagnetic properties were investigated. Single-band and two-band models were used to estimate the concentration and mobility of charge carriers in WTe2 at temperatures from 4.2 to 150 K.
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Submitted 30 June, 2023;
originally announced July 2023.
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Magnetic order and electronic transport properties in the Mn$_3$Al compound: the role of the structural state
Authors:
V. V. Marchenkov,
V. Yu. Irkhin,
E. B. Marchenkova,
A. A. Semiannikova,
P. S. Korenistov
Abstract:
Electronic transport and magnetic properties of bulk and rapid melt quenched samples of the Mn$_3$Al Heusler alloy were studied. A correlation between the magnetic and structural states was established. For a cast sample, there is no ferromagnetic moment, and the behavior of the magnetic susceptibility (break at low temperatures and the Curie-Weiss law with high values of the paramagnetic Curie te…
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Electronic transport and magnetic properties of bulk and rapid melt quenched samples of the Mn$_3$Al Heusler alloy were studied. A correlation between the magnetic and structural states was established. For a cast sample, there is no ferromagnetic moment, and the behavior of the magnetic susceptibility (break at low temperatures and the Curie-Weiss law with high values of the paramagnetic Curie temperature) indicates a frustrated antiferromagnetic state. At the same time, for a rapid melt quenched sample, a ferrimagnetic state is observed with a moment close to compensation. The results of measurements of the electrical resistivity and the Hall effect evidence as well in favor of the implementation of these magnetic states.
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Submitted 15 May, 2023;
originally announced May 2023.
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Electronic Transport in a Topological Semimetal WTe2 Single Crystal
Authors:
A. N. Perevalova,
S. V. Naumov,
V. V. Chistyakov,
E. B. Marchenkova,
B. M. Fominykh,
V. V. Marchenkov
Abstract:
Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic temperature dependences of the electrical resistivity in the absence of a magnetic field and the conductivity in a magnetic field are observed at low temperatures,…
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Electrical resistivity, magnetoresistivity, and the Hall effect have been studied in a topological semimetal WTe2 single crystal in the temperature range from 12 to 200 K under magnetic fields up to 9 T. It has been found that quadratic temperature dependences of the electrical resistivity in the absence of a magnetic field and the conductivity in a magnetic field are observed at low temperatures, which is apparently associated with contributions from various scattering mechanisms. Single-band and two-band models were used to analyze data on the Hall effect and magnetoresistivity. These results indicate electron-hole compensation with a slight predominance of electron charge carriers.
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Submitted 1 February, 2023;
originally announced February 2023.
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Unusual kinetic properties of usual Heusler alloys
Authors:
V. V. Marchenkov,
V. Yu. Irkhin,
A. A. Semiannikova
Abstract:
The review considers various groups of Heusler compounds, which can have the properties of a semiconductor, a half-metallic ferromagnet, a spin gapless semiconductor, a topological semimetal, and a noncollinear antiferromagnet. In these Heusler compounds, "conventional" from the point of view of the crystal structure, unusual kinetic and magnetic properties can be observed, which are caused by the…
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The review considers various groups of Heusler compounds, which can have the properties of a semiconductor, a half-metallic ferromagnet, a spin gapless semiconductor, a topological semimetal, and a noncollinear antiferromagnet. In these Heusler compounds, "conventional" from the point of view of the crystal structure, unusual kinetic and magnetic properties can be observed, which are caused by the features of their electronic structure (e.g., presence of an energy gap for one spin projection) and magnetic state (e.g., strong ferromagnetism, compensated ferrimagnetism, etc.). Their magnetic and kinetic characteristics are very sensitive to external influences. Depending on the alloy composition and external parameters, transitions between the considered states can be realized. All this opens up further prospects for controlling the electronic and magnetic characteristics of such compounds and their practical application.
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Submitted 31 August, 2022;
originally announced August 2022.
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Half-metallic Ferromagnets, Spin Gapless Semiconductors, and Topological Semimetals Based on Heusler Alloys
Authors:
V. V. Marchenkov,
V. Yu. Irkhin
Abstract:
A review of theoretical and experimental studies of the electronic structure, electronic and magnetic properties of various systems of Heusler alloys in the states of a half-metallic ferromagnet, a spin gapless semiconductor, and a topological semimetal is presented. These substances have unusual, highly sensitive to external influences, magnetic and electronic characteristics, which is associated…
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A review of theoretical and experimental studies of the electronic structure, electronic and magnetic properties of various systems of Heusler alloys in the states of a half-metallic ferromagnet, a spin gapless semiconductor, and a topological semimetal is presented. These substances have unusual, highly sensitive to external influences, magnetic and electronic characteristics, which is associated with the presence of energy gaps and exotic excitations in them. The features of the behavior and evolution of the electronic structure and properties in each of these states, as well as during the transition between them, are considered. The possibility to purposefully control the properties of such materials is prospective for their practical application.
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Submitted 29 November, 2021;
originally announced November 2021.
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Electronic, magnetic and galvanomagnetic properties of Co-based Heusler alloys: possible states of a half-metallic ferromagnet and spin gapless semiconductor
Authors:
A. A. Semiannikova,
Yu. A. Perevozchikova,
V. Yu Irkhin,
E. B. Marchenkova,
P. S. Korenistov,
V. V. Marchenkov
Abstract:
Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagne…
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Parameters of the energy gap and, consequently, electronic, magnetic and galvanomagnetic properties in different X$_2$YZ Heusler alloys can vary quite strongly. In particular, half-metallic ferromagnets (HMFs) and spin gapless semiconductors (SGSs) with almost 100% spin polarization of charge carriers are promising materials for spintronics. The changes in the electrical, magnetic and galvanomagnetic properties of the Co$_2$YSi (Y = Ti, V, Cr, Mn, Fe) and Co$_2$MnZ Heusler alloys (Z = Al, Si, Ga, Ge) in possible HMF and/or SGS states were followed and their interconnection was established. Significant changes in the values of the magnetization and residual resistivity were found. At the same time, the correlations between the changes in these electronic and magnetic characteristics depending on the number of valence electrons and spin polarization are observed.
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Submitted 1 February, 2021;
originally announced February 2021.
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125Te spin-lattice relaxation in a candidate to Weyl semimetals WTe2
Authors:
A. O. Antonenko,
E. V. Charnaya,
A. L. Pirozerskii,
D. Yu. Nefedov,
M. K. Lee,
L. J. Chang,
J. Haase,
S. V. Naumov,
A. N. Domozhirova,
V. V. Marchenkov
Abstract:
The tungsten ditelluride WTe2 was suggested to belong to the Weyl semimetal family. We studied 125Te spin-lattice relaxation and NMR spectra in a WTe2 single crystal within a large range from 28 K up to room temperature. Measurements were carried out on a Bruker Avance 500 NMR pulse spectrometer for two orientations of the crystalline c axis, parallel and perpendicular to magnetic field. Relaxatio…
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The tungsten ditelluride WTe2 was suggested to belong to the Weyl semimetal family. We studied 125Te spin-lattice relaxation and NMR spectra in a WTe2 single crystal within a large range from 28 K up to room temperature. Measurements were carried out on a Bruker Avance 500 NMR pulse spectrometer for two orientations of the crystalline c axis, parallel and perpendicular to magnetic field. Relaxation proved to be single-exponential. The relaxation time varied depending on the sample position in magnetic field and frequency offset. The relaxation rate increased about linearly with temperature below 70 K however the dependence became nearly quadratic at higher temperatures. The relaxation rate within the total temperature range was fitted using a theoretical model developed in [41] for Weyl semimetals and assuming the decrease of the chemical potential with increasing temperature. The results obtained for 125Te spin-lattice relaxation evidence in favor of the topological nontriviality of the WTe2 semimetal. The 125Te NMR spectra agreed with the occurrence of nonequivalent tellurium sites and varied insignificantly with temperature.
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Submitted 29 July, 2020; v1 submitted 24 July, 2020;
originally announced July 2020.
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Peculiarities of electronic transport and magnetic state in half-metallic ferromagnetic and spin gapless semiconducting Heusler alloys
Authors:
V. V. Marchenkov,
V. Yu. Irkhin,
Yu. A. Perevozchikova
Abstract:
A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown tha…
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A brief survey of experimental and theoretical studies of half-metallic ferromagnets (HMFs) and spin gapless semiconductors is given, the possible candidates being the X$_2$YZ (X = Mn, Fe, Co; Y = Ti, V, Cr, Mn, Fe, Co, Ni; Z = Al, Si, Ga, Ge, In, Sn, Sb) Heusler alloys. The data on the electrical resistivity, normal and anomalous Hall Effect, and magnetic properties are presented. It is shown that the Co$_2$FeZ alloys demonstrate properties of conventional ferromagnets, the HMF properties being also manifested at the variation of the Z-component. The Fe$_2$YAl and Mn$_2$YAl alloys show at the variation of the Y-component both metallic and semiconducting electronic characteristics, the magnetic properties, changing from the ferromagnetic to compensated ferrimagnetic state. The HMF and spin gapless semiconductor states are supposed to exist in these Heusler alloys systems.
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Submitted 23 December, 2019;
originally announced December 2019.
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Half-Metallic Ferromagnets and Spin Gapless Semiconductors
Authors:
V. V. Marchenkov,
N. I. Kourov,
V. Yu. Irkhin
Abstract:
A brief review of experimental and theoretical studies of half-metallic ferromagnets (HMF) and spin gapless semiconductors (SGS) is given. The data on resistivity and magnetoresistivity are presented. An important role of non-quasiparticle states owing to electron-magnon scattering in transport properties is discussed. The problem of low-temperature resistivity in HMF is treated in terms of one-ma…
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A brief review of experimental and theoretical studies of half-metallic ferromagnets (HMF) and spin gapless semiconductors (SGS) is given. The data on resistivity and magnetoresistivity are presented. An important role of non-quasiparticle states owing to electron-magnon scattering in transport properties is discussed. The problem of low-temperature resistivity in HMF is treated in terms of one-magnon and two-magnon scattering processes.
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Submitted 24 February, 2019;
originally announced February 2019.
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Peculiarities of the electronic transport in half-metallic Co-based Heusler alloys
Authors:
V. V. Marchenkov,
Yu. A. Perevozchikova,
N. I. Kourov,
V. Yu. Irkhin,
M. Eisterer,
T. Gao
Abstract:
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence $ρ(T)$, while this effect is not observed upon…
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Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to 100 kOe. It was found that varying Y in affects strongly the electric resistivity and its temperature dependence $ρ(T)$, while this effect is not observed upon changing Z. When Y is varied, extrema (maximum or minimum) are observed in $ρ(T)$ near the Curie temperature $T_C$. At $T < T_C$, the $ρ(T)$ behavior can be ascribed to a change in electronic energy spectrum near the Fermi level. The coefficients of the normal and anomalous Hall effect were determined. It was shown that the latter coefficient, $R_S$, is related to the residual resistivity $ρ_0$ by a power law $R_S \sim ρ_0^k/M_S$ with $M_S$ the spontaneous magnetization. The exponent $k$ was found to be 1.8 for Co$_2$FeZ alloys, which is typical for asymmetric scattering mechanisms, and 2.9 for Co$_2$YAl alloys, which indicates an additional contribution to the anomalous Hall effect. The temperature dependence of resistivity at low temperatures is analyzed and discussed in the framework of the two-magnon scattering theory.
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Submitted 5 December, 2017;
originally announced December 2017.
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NMR studies of the topological insulator Bi2Te3
Authors:
A. O. Antonenko,
E. V. Charnaya,
D. Yu. Nefedov,
D. Yu. Podorozhkin,
A. V. Uskov,
A. S. Bugaev,
M. K. Lee,
L. J. Chang,
S. V. Naumov,
Yu. A. Perevozchikova,
V. V. Chistyakov,
J. C. A. Huang,
V. V. Marchenkov
Abstract:
Te NMR studies were carried out for the bismuth telluride topological insulator in a wide range from room temperature down to 12.5 K. The measurements were made on a Bruker Avance 400 pulse spectrometer. The NMR spectra were collected for the mortar and pestle powder sample and for single crystalline stacks with orientations c parallel and perpendicular to field. The activation energy responsible…
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Te NMR studies were carried out for the bismuth telluride topological insulator in a wide range from room temperature down to 12.5 K. The measurements were made on a Bruker Avance 400 pulse spectrometer. The NMR spectra were collected for the mortar and pestle powder sample and for single crystalline stacks with orientations c parallel and perpendicular to field. The activation energy responsible for thermal activation. The spectra for the stack with c parallel to field showed some particular behavior below 91 K.
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Submitted 18 January, 2017;
originally announced January 2017.
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Robust topological insulator surface state in MBE grown (Bi_{1-x}Sb_x)_2Se_3
Authors:
Y. Hung Liu,
C. Wei Chong,
W. Chuan Chen,
J. C. A. Huang,
C. -Maw Cheng,
K. -Ding Tsuei,
Z. Li,
H. Qiu,
V. V. Marchenkov
Abstract:
(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved…
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(Bi1-xSbx)2Se3 thin films have been prepared using molecular beam epitaxy (MBE). We demonstrate the angle-resolved photoemission spectroscopy (ARPES) and transport evidence for the existence of strong and robust topological surface states in this ternary system. Large tunability in transport properties by varying the Sb do** level has also been observed, where insulating phase could be achieved at x=0.5. Our results reveal the potential of this system for the study of tunable topological insulator and metal-insulator transition based device physics.
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Submitted 25 November, 2016;
originally announced November 2016.
