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Correlation functions with single photon emitters under noisy resonant continuous excitation
Authors:
E. Baudin,
R. Proux,
M. Maragkou,
Ph. Roussignol,
C. Diederichs
Abstract:
To characterize the statistics and indistinguishability of a source, it is common to measure the correlation functions of the emitted field using various interferometers. Here, we present a theoretical framework for the computation of the correlation functions of a two-level system that is resonantly driven by a realistic noisy cw excitation laser. Analytic expressions of the first and second-orde…
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To characterize the statistics and indistinguishability of a source, it is common to measure the correlation functions of the emitted field using various interferometers. Here, we present a theoretical framework for the computation of the correlation functions of a two-level system that is resonantly driven by a realistic noisy cw excitation laser. Analytic expressions of the first and second-order auto-correlation functions are obtained where the various contributions of the noisy excitation source are correctly taken into account. We predict that, even in the low power regime, the noise source has a strong influence on the two-level system dynamics, which is not anticipated by simpler models. The characterization of photon indistinguishability in the pulsed excitation regime is usually done by measuring the value of the zero-delay intensity correlation obtained with a Hong-Ou-Mandel interferometer. We show that this figure is irrelevant in the cw excitation regime and we introduce the coalescence time window, a figure of merit based on a probabilistic interpretation of the notion of photon indistinguishability. We finally use the coalescence time window to quantify how noisy cw excitation influences photon indistinguishability.
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Submitted 19 November, 2018;
originally announced November 2018.
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Measuring the photon coalescence time-window in the continuous-wave regime for resonantly driven semiconductor quantum dots
Authors:
Raphaël Proux,
Maria Maragkou,
Emmanuel Baudin,
Christophe Voisin,
Philippe Roussignol,
Carole Diederichs
Abstract:
We revisit Mandel's notion that the degree of coherence equals the degree of indistinguishability by performing Hong-Ou-Mandel- (HOM-)type interferometry with single photons elastically scattered by a cw resonantly driven excitonic transition of an InAs/GaAs epitaxial quantum dot. We present a comprehensive study of the temporal profile of the photon coalescence phenomenon which shows that photon…
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We revisit Mandel's notion that the degree of coherence equals the degree of indistinguishability by performing Hong-Ou-Mandel- (HOM-)type interferometry with single photons elastically scattered by a cw resonantly driven excitonic transition of an InAs/GaAs epitaxial quantum dot. We present a comprehensive study of the temporal profile of the photon coalescence phenomenon which shows that photon indistinguishability can be tuned by the excitation laser source, in the same way as their coherence time. A new figure of merit, the coalescence time window, is introduced to quantify the delay below which two photons are indistinguishable. This criterion sheds new light on the interpretation of HOM experiments under cw excitation, particularly when photon coherence times are longer than the temporal resolution of the detectors. The photon indistinguishability is extended over unprecedented time scales beyond the detectors' response time, thus opening new perspectives to conducting quantum optics with single photons and conventional detectors.
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Submitted 27 January, 2015; v1 submitted 4 April, 2014;
originally announced April 2014.
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Bichromatic dressing of a quantum dot detected by a remote second quantum dot
Authors:
M. Maragkou,
C. Sánchez-Muñoz,
S. Lazić,
E. Chernysheva,
H. P. van der Meulen,
A. González-Tudela,
C. Tejedor,
L. J. Martínez,
I. Prieto,
P. A. Postigo,
J. M. Calleja
Abstract:
We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out…
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We demonstrate an information transfer mechanism between two dissimilar remote InAs/GaAs quantum dots weakly coupled to a common photonic crystal microcavity. Bichromatic excitation in the s-state of one of the dots leads to the formation of dressed states due to the coherent coupling to the laser field, in resonance with the quantum dot. Information on the resulting dressed structure is read out through the photo-luminescence spectrum of the other quantum dot, as well as the cavity mode. The effect is also observed upon exchange of the excitation and detection quantum dots. This quantum dot inter-talk is interpreted in terms of a cavity-mediated coupling involving acoustic phonons. A master equation for a three level system coherently pumped by the two lasers quantitatively describes the behavior of our system. Our results present an important step towards scalable solid-state quantum networking based on coupled multi-quantum-dot-cavity systems, without the need of using identical quantum emitters.
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Submitted 17 September, 2013;
originally announced September 2013.
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Crossover from exciton-polariton to photon Bose-Einstein condensation
Authors:
Elena Kammann,
Hamid Ohadi,
Maria Maragkou,
Alexey V. Kavokin,
Pavlos G. Lagoudakis
Abstract:
BEC of exciton-polaritons and related effects such as superfluidity1,2, spontaneous symmetry breaking3,4 and quantised vortices5,6 open way to creation of novel light sources7 and optical logic elements8. Remarkable observations of exciton-polariton BEC in microcavities9-12 have been reported in the recent ten years. Very recently, thermalisation and subsequent condensation of cavity photons in a…
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BEC of exciton-polaritons and related effects such as superfluidity1,2, spontaneous symmetry breaking3,4 and quantised vortices5,6 open way to creation of novel light sources7 and optical logic elements8. Remarkable observations of exciton-polariton BEC in microcavities9-12 have been reported in the recent ten years. Very recently, thermalisation and subsequent condensation of cavity photons in a dye-filled microcavity have been observed13. Here we show that BEC of both exciton-polaritons and photons can be created in the same system under different optical excitation conditions. A dynamic phase transition between a photon and a polariton BEC takes place after a single high-power excitation pulse and we find both condensed states in thermal equilibrium with the excited states. At the crossover, photons and polaritons coexist, which results in a decrease in the long-range spatial coherence. Build-up and successive depinning of polarisation is observed at the threshold of both polariton and photon condensation.
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Submitted 21 August, 2012; v1 submitted 24 March, 2011;
originally announced March 2011.
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LO-phonon assisted polariton laser
Authors:
M. Maragkou,
A. J. D. Grundy,
T. Ostatnický,
P. G. Lagoudakis
Abstract:
We demonstrate the role of LO-phonon assisted polariton relaxation in reducing the stimulation threshold in strongly coupled microcavities. When the energy of the relaxation bottleneck is one LO-phonon above the ground polariton state, we observe a ten-fold improvement of the polariton relaxation rate in the linear regime, and a two-fold reduction of the threshold to the non-linear polariton lasin…
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We demonstrate the role of LO-phonon assisted polariton relaxation in reducing the stimulation threshold in strongly coupled microcavities. When the energy of the relaxation bottleneck is one LO-phonon above the ground polariton state, we observe a ten-fold improvement of the polariton relaxation rate in the linear regime, and a two-fold reduction of the threshold to the non-linear polariton lasing regime.
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Submitted 4 June, 2010; v1 submitted 14 May, 2010;
originally announced May 2010.
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Ground-state polariton condensation in 2D-GaAs semiconductor microcavities
Authors:
M. Maragkou,
A. J. D. Grundy,
P. G. Lagoudakis
Abstract:
We observe ground-state polariton condensation in a two dimensional GaAs/AlAs semiconductor microcavity under non resonant pulsed optical excitation. We resolve the formation of a polariton condensate by studying the spatial, angular, coherence, energy and transient dynamics of polariton photoluminescence. For high excitation densities we also observe a transition from the weak- to the strong-co…
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We observe ground-state polariton condensation in a two dimensional GaAs/AlAs semiconductor microcavity under non resonant pulsed optical excitation. We resolve the formation of a polariton condensate by studying the spatial, angular, coherence, energy and transient dynamics of polariton photoluminescence. For high excitation densities we also observe a transition from the weak- to the strong-coupling regime in the time-domain and resolve the build-up of a coherent polariton state.
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Submitted 22 July, 2009; v1 submitted 21 July, 2009;
originally announced July 2009.
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Spontaneous non-ground state polariton condensation in pillar microcavities
Authors:
M. Maragkou,
A. J. D. Grundy,
E. Wertz,
A. Lemaitre,
I. Sagnes,
P. Senellart,
J. Bloch,
P. G. Lagoudakis
Abstract:
We observe spontaneously driven non-ground state polariton condensation in GaAs pillar microcavities under non-resonant optical excitation. We identify a regime where the interplay of exciton-exciton and pair polariton scattering can lead to mode switching from non-ground state to ground state polariton condensation. A simple kinematic model satisfactorily describes the observed mode switching a…
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We observe spontaneously driven non-ground state polariton condensation in GaAs pillar microcavities under non-resonant optical excitation. We identify a regime where the interplay of exciton-exciton and pair polariton scattering can lead to mode switching from non-ground state to ground state polariton condensation. A simple kinematic model satisfactorily describes the observed mode switching as each of the above scattering mechanisms becomes prevalent at different carrier densities.
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Submitted 20 July, 2009;
originally announced July 2009.
